Abstract:
An optical sensor apparatus for use in an extreme ultraviolet lithographic system is disclosed. The apparatus includes an optical sensor comprising a sensor surface and a removal mechanism configured to remove debris from the sensor surface. Accordingly, dose and/or contamination measurements may be carried out conveniently for the lithographic system.
Abstract:
A lithographic spectral filter including a first filter element including a slit having an in plane length dimension arranged in a first direction; and a second filter element arranged at a subsequent position along an optical path of radiation of first and second wavelengths to the first filter element, the second filter element including a slit having an in plane length dimension arranged in a second direction transverse to the first direction, wherein the spectral filter is configured to reflect radiation of a first wavelength and allow transmission of radiation of a second wavelength, the first wavelength being larger than the second wavelength.
Abstract:
A patterning device for a photolithographic apparatus is used to form a patterned radiation beam, by imparting a cross-sectional pattern to the radiation beam during reflection from the patterning device. The patterning device comprises a layer of phase-change material that is capable of locally undergoing an induced structural phase change into respective ones of a plurality of stable and/or metastable states. Furthermore, the patterning device comprises a radiation reflective structure with periodically arranged layers adjacent to the layer of phase-change material. The radiation reflective structures do not partake in the phase changes. By locally changing the phase of the phase-change material, the reflectivity of the whole structure is modified, for example due to thickness changes in the layer of phase-change material that lead to destructive interference of different components of the reflected light or due to changes in surface roughness of the radiation reflective structure.
Abstract:
A radiation source having self-shading electrodes is disclosed. Debris originating from the electrodes is reduced. The path from the electrodes to the EUV optics is blocked by part of the electrodes themselves (termed self-shading). This may significantly reduce the amount of electrode-generated debris.
Abstract:
According to an aspect of the present invention, a spectral purity filter includes an aperture, the aperture being arranged to diffract a first wavelength of radiation and to allow at least a portion of a second wavelength of radiation to be transmitted through the aperture, the second wavelength of radiation being shorter than the first wavelength of radiation, wherein the aperture has a diameter greater than 20 μm.
Abstract:
A spectral purity filter is configured to reflect extreme ultraviolet radiation. The spectral purity filter includes a substrate, and an anti-reflective coating on a top surface of the substrate. The anti-reflective coating is configured to transmit infrared radiation. The filter also includes a multi-layer stack configured to reflect extreme ultraviolet radiation and to substantially transmit infrared radiation.
Abstract:
A radiation source is configured to generate radiation. The radiation source includes a first electrode and a second electrode configured to produce an electrical discharge during use to generate radiation-emitting plasma from a plasma fuel. The radiation source also includes a fuel supply configured to supply a plasma fuel to a fuel release area that is associated with the first electrode and the second electrode, and a fuel release configured to induce release of fuel, supplied by the fuel supply, from the fuel release area. The fuel release area is spaced-apart from the first electrode and from the second electrode.
Abstract:
According to an aspect of the present invention, a spectral purity filter includes an aperture, the aperture being arranged to diffract a first wavelength of radiation and to allow at least a portion of a second wavelength of radiation to be transmitted through the aperture, the second wavelength of radiation being shorter than the first wavelength of radiation, wherein the aperture has a diameter greater than 20 μm.
Abstract:
A reflector includes a multi layer mirror structure configured to reflect radiation at a first wavelength, and one or more additional layers. The absorbance and refractive index at a second wavelength of the multi layer mirror structure and the one or more additional layers, and the thickness of the multi layer mirror structure and the one or more additional layers, are configured such that radiation of the second wavelength which is reflected from a surface of the reflector interferes in a destructive manner with radiation of the second wavelength which is reflected from within the reflector.
Abstract:
An optical element includes a first layer that includes a first material, and is configured to be substantially reflective for radiation of a first wavelength and substantially transparent for radiation of a second wavelength. The optical element includes a second layer that includes a second material, and is configured to be substantially absorptive or transparent for the radiation of the second wavelength. The optical element includes a third layer that includes a third material between the first layer and the second layer, and is substantially transparent for the radiation of the second wavelength and configured to reduce reflection of the radiation of the second wavelength from a top surface of the second layer facing the first layer. The first layer is located upstream in the optical path of incoming radiation with respect to the second layer in order to improve spectral purity of the radiation of the first wavelength.