Abstract:
A method for manufacturing a semiconductor wafer (112) is provided. The method comprises providing a monocrystalline silicon wafer (102), epitaxially growing a first layer (108) of a first material on the silicon wafer (102), and epitaxially growing a second layer (110) of a second material on the first layer. Said first material is monocrystalline silicon carbide, and said second material is monocrystalline silicon.
Abstract:
A clamping circuit (10) to a voltage reference (GND) is described, of the type comprising at least one clamping core (11) connected to an output terminal (HVout) and having a central node (XC) connected to the voltage reference (GND) and in turn including at least one first and one second clamp transistor (MC1; MC2), connected to the central node (XC) and having respective control terminals (XG1, XG2), the clamping core (11) being also connected at the input to a low voltage input driver block (13). Advantageously according to the invention, the clamping core (11) further comprises at least one first switching off transistor (MS1) connected to the output terminal (HVout) and to the first clamp transistor (MC1), as well as a second switching off transistor (MS2) connected to the output terminal (HVout) and to the second clamp transistor (MC2), these first and second clamp transistors (MC1, MC2) being high voltage MOS transistors of complementary type and these first and second switching off transistors (MS1, MS2) being high voltage MOS transistors of complementary type and connected to the first and second clamp transistors (MC1, MC2) by having the respective equivalent or body diodes in anti-series so as to close themselves when the clamping circuit (10) is active and to sustain positive and negative high voltages when the clamping circuit (10) is not active.
Abstract:
The invention relates to a driving method for obtaining a linear gain variation of a transconductance amplifier, of the type comprising at least one differential transistor cell, with adjustment of a driving voltage value (Vtgc1) of a degenerative driving transistor (MD1) of said transconductance amplifier, comprising the steps of : generating an output current signal of a differential cell (11) being a copy of said differential transistor cell of said transconductance amplifier, said output current signal having a linear relationship with a transconductance value of said copy differential cell (11) as said driving voltage (Vtgc1) varies; generating a reference current signal having a linear relationship with a differential input voltage; comparing said output current signal and said reference current signal for adjusting said driving voltage value (Vtgc1) and modifying said transconductance value of said copy differential cell (11) up to a balance of said current signals.
Abstract:
A lid for a MEMS device and the relative manufacturing method. The lid includes: a first board (20) with opposite first and second surfaces (20a, 20b) having first and second metal layers (21a, 21b) disposed thereon, respectively, wherein a through cavity (200) extends through the first board and the first and second metal layers; a second board (23) with opposite third and fourth surfaces (23a, 23b); an adhesive layer (22) sandwiched between the second surface of the first board and the third surface of the second board to couple the first and second boards together such that the through cavity is closed by the second board, thereby forming a recess (200); and a first conductor layer (25a) coating the bottom and the side surfaces (201a, 201b) of the recess. The lid enhances the shielding effect upon the MEMS device.
Abstract:
Ring oscillator comprising a plurality of elementary units (5) connected in cascade and linked in order to make a chain with the respective output terminals (OUT) connected to the input terminals (IN) of the successive elementary units (5) of the chain, the elementary units (5) being crossed by a cyclic signal (CLK) during a time period (Δt) of activation, each of said elementary units (5) comprising an auxiliary recovery terminal (15) for temporarily resetting each elementary unit (5) during each loop of said cyclic signal (CLK), said auxiliary recovery terminal (15) being connected to an output terminal (OUT) of a successive elementary unit (5) of the chain.
Abstract:
A process for manufacturing a MEMS device, wherein a bottom silicon region (4b) is formed on a substrate and on an insulating layer (3); a sacrificial region (5a) of dielectric is formed on the bottom region; a membrane region (21), of semiconductor material, is epitaxially grown on the sacrificial region; the membrane region is dug as far as the sacrificial region so as to form through trenches (15); the side wall and the bottom of the through trenches are completely coated in a conformal way with a porous material layer (16); at least one portion of the sacrificial region is selectively removed through the porous material layer and forms a cavity (18); and the through trenches are filled with filling material (20a) so as to form a monolithic membrane suspended above the cavity (18).
Abstract:
A resonant dc-dc converter for converting an input dc voltage to an output dc voltage is provided. The converter includes a switching circuit for receiving the input dc voltage and generating a periodic square wave voltage oscillating between a high value corresponding to the input dc voltage and a low value corresponding to a fixed voltage. The square wave voltage oscillates at a main frequency with a main duty cycle. The converter further includes a switching driving circuit for driving the switching circuit. The switching driving circuit includes a timing circuit for setting the main frequency and the main duty cycle of the square wave voltage. The timing circuit is configured to set the value of the main duty cycle to about 50% when the converter operates in steady state. The converter includes a conversion circuit based on a resonant circuit for generating the output dc voltage from the square wave voltage based on the main frequency and on the main duty cycle. The converter further includes a disabling circuit for temporarily halting the timing circuit after a power on of the converter in such a way to temporarily vary the main duty cycle of the square wave voltage during at least one period of the square wave voltage.
Abstract:
A power supply circuit (30; 30'; 30'') for an electrical appliance (49), comprising a turning-on stage (32; 32') configured for determining a transition from a turned-off state, in which the power supply circuit (30; 30; 30) is off and does not supply electric power, to a turned-on state of the power supply circuit (30; 30'; 30''). The turning-on stage (32; 32') comprises a transducer (33; 36) of the remote-control type configured for triggering the transition in response to the reception of a wireless signal.
Abstract:
The method for detecting the presence of liquids includes detecting an initial temperature (Tl) in a channel (9) accommodating a liquid; heating the channel for a predetermined test time (Δt2); detecting a test temperature (T2); determining a temperature variation (S) on the basis of the initial temperature, the test temperature, and the test time; and comparing the temperature variation with at least one threshold (Z). Before detecting an initial temperature, an ambient temperature is read, the channel is heated to the initial temperature, and is kept at the initial temperature for a time period.
Abstract:
An electrostatic micromotor (10') is provided with a fixed substrate (12), a mobile substrate (13) facing the fixed substrate (12), and electrostatic-interaction elements (14, 15, 17) enabling a relative movement of the mobile substrate (3) with respect to the fixed substrate (2) in a movement direction (x); the electrostatic micromotor is also provided with a capacitive position-sensing structure (18') configured to enable sensing of a relative position of the mobile substrate (13) with respect to the fixed substrate (12) in the movement direction (x). The capacitive position-sensing structure (18') is formed by at least one sensing indentation (22), extending within the mobile substrate (13) from a first surface (13a; 13b) thereof, and by at least one first sensing electrode (24), facing, in at least one given operating condition, the sensing indentation (22).