公开(公告)号：US5326172A

公开(公告)日：1994-07-05

申请号：US991403

申请日：1992-12-14

Applicant: Daniel L. P. Ng

Inventor： Daniel L. P. Ng

IPC: G01J5/00 ,  G01J5/62 ,  G01J5/52

CPC classification number: G01J5/08 ,  G01J5/0821 ,  G01J5/0834 ,  G01J5/0896 ,  G01J2005/0048 ,  G01J2005/0074

Abstract: A method and apparatus for detecting the temperature of gray and non-gray bodies in the presence of interfering radiation. A gray body has a constant emissivity less than 1 and a non-gray body has an emissivity which varies with wavelength. The emissivity and reflectivity of the surface is determined over a range of wavelengths. Spectra are also measured of the extraneous interference radiation source and the surface of the object to be measured in the presence of the extraneous interference radiation source. An auxiliary radiation source is used to determine the reflectivity of the surface and also the emissivity. The measured spectrum of the surfaces in the presence of the extraneous interference radiation source is set equal to the emissivity of the surface multiplied by a Planck function containing a temperature term T plus the surface reflectivity multiplied by the spectrum of the extraneous interference radiation source. The equation is then solved for T to determine the temperature of the surface.

Abstract translation: 一种用于在存在干扰辐射的情况下检测灰色和非灰色体的温度的方法和装置。 灰体具有小于1的恒定发射率，非灰体具有随波长变化的发射率。 在波长范围内确定表面的发射率和反射率。 在外来干涉辐射源的存在下，还测量外来干涉辐射源和待测物体表面的光谱。 辅助辐射源用于确定表面的反射率和发射率。 在外部干涉辐射源存在的情况下，表面的测量光谱被设置为等于表面的发射率乘以包含温度项T的平面函数加上表面反射率乘以外部干涉辐射源的光谱。 然后求解该方程式以确定表面的温度。

公开(公告)号：US5208643A

公开(公告)日：1993-05-04

申请号：US594528

申请日：1990-10-05

Applicant: James A. Fair

Inventor： James A. Fair

IPC: C23C14/54 ,  G01J5/00 ,  G01J5/58

CPC classification number: G01J5/08 ,  C23C14/541 ,  G01J5/0846 ,  G01J5/58 ,  G01J2005/0074 ,  G01J5/0007

Abstract: The temperature and radiant energy emissivity of a semiconductor substrate or wafer undergoing processing are monitored by combining indications derived from an interferometer and the intensity of radiant energy emitted from the substrate. The radiant energy intensity is detected at adjacent maxima or minima in the intensity of the interference pattern.

Abstract translation: 通过组合来自干涉仪的指示和从衬底发射的辐射能的强度来监测正在进行处理的半导体衬底或晶片的温度和辐射能发射率。 辐射能强度在相邻的最大值或最小值处以干涉图案的强度被检测。

公开(公告)号：US5029117A

公开(公告)日：1991-07-02

申请号：US342005

申请日：1989-04-24

Applicant: Evan E. Patton

Inventor： Evan E. Patton

IPC: G01J5/00

CPC classification number: G01J5/0003 ,  G01J5/0007 ,  G01J5/08 ,  G01J5/0834 ,  G01J5/0896 ,  G01J2005/0048 ,  G01J2005/0074

Abstract: The present invention constitutes a pyrometer device and an associated method of operation for measuring temperature based on the radiation emitted by a heated body in which increased accuracy is achieved by actively ascertaining the emittance of the body whose temperature is being measured. The pyrometer device includes a light source for intermittently illuminating the heated body and a radiation sensing mechanism for measuring the amount of light reflected and radiated by the body. The pyrometer device further includes a signal processing unit for processing the information developed by the radiation sensing mechanism and deriving the temperature of the body based on a calculated emittance factor and the amount of light radiated by the body.

Abstract translation: 本发明构成高温计装置和相关联的操作方法，其基于由加热体发射的辐射来测量温度，其中通过主动地确定正在测量其温度的身体的发射率来实现增加的精度。 高温计装置包括用于间歇地照射加热体的光源和用于测量由身体反射和辐射的光量的辐射感测机构。 高温计装置还包括信号处理单元，用于处理由辐射检测机构开发的信息，并且基于所计算的发射因数和身体辐射的光量来导出身体的温度。

公开(公告)号：US4985858A

公开(公告)日：1991-01-15

申请号：US356078

申请日：1989-05-23

Applicant: Philip W. Morrison, Jr. ,  Peter R. Solomon ,  David G. Hamblen

Inventor： Philip W. Morrison, Jr. ,  Peter R. Solomon ,  David G. Hamblen

IPC: G01J3/453 ,  G01J5/00 ,  G01J5/60 ,  G01N21/55

CPC classification number: G01J5/601 ,  G01J2005/0074 ,  G01J3/453 ,  G01N21/55

Abstract: An optical technique for determining surface temperature utilizes the Christiansen effect that is exhibited by dielectric materials; i.e., strong absorption bands at certain wavenumber values, causing the radiance of the material to be that which would characterize a theoretical black body at that wavenumber value.

Abstract translation: 用于确定表面温度的光学技术利用由介电材料表现出的Christiansen效应; 即在某些波数值处的强吸收带，导致材料的辐射度是在该波数值下表征理论黑体的材料的辐射度。

公开(公告)号：US4956538A

公开(公告)日：1990-09-11

申请号：US242755

申请日：1988-09-09

Applicant: Mehrdad M. Moslehi

Inventor： Mehrdad M. Moslehi

IPC: G01J5/00

CPC classification number: G01J5/0003 ,  G01J2005/0074

Abstract: A first and second pyrometer (26-28) are optically coupled by a light pipe (24) to a wafer (30) in an apparatus (10). The light pipe (24) passes through a shroud (16) of a heating lamp module (14). A computer (74) is interconnected to the pyrometers (26-28) and a lamp module power supply (80). A laser (48) emits a laser beam (50) through a power meter (86) onto an infrared mirror (56) over the light pipe (24). The mirror (56) directs the beam onto wafer (30) which reflects a portion of the beam back to the infrared mirror (56). The beam is then guided to an infrared photo-detector (58) which provides, in combination with the incident laser beam power meter (86), reflectance of the wafer surface for the laser beam which is related to wafer emissivity. The spectral infrared emissivity measurement can be performed more accurately over an extended temperature range if the transmissivity of the wafer is determined by another infrared photodetector (59) and both the measured wafer reflectance and transmissivity data are used to calculate the emissivity. Wafer emissivity data and pyrometers reading data are evaluated by the computer (74) to determine the true wafer temperature in real-time and to raise or lower the power output from the power supply (80) to adjust the wafer temperature within the apparatus (10).

Abstract translation: 在设备（10）中，第一和第二高温计（26-28）通过光管（24）光学耦合到晶片（30）。 光管（24）穿过加热灯模块（14）的护罩（16）。 计算机（74）与高温计（26-28）和灯模块电源（80）互连。 激光器（48）通过功率计（86）将激光束（50）发射到光管（24）上的红外反射镜（56）上。 反射镜（56）将光束引导到将光束的一部分反射回红外镜（56）的晶片（30）上。 然后将光束引导到红外光电检测器（58），红外光电检测器（58）与入射激光束功率计（86）组合提供与晶片发射率相关的激光束的晶片表面的反射率。 如果晶片的透射率由另一个红外光电检测器（59）确定，并且使用测量的晶片反射率和透射率数据来计算发射率，则可以在扩展的温度范围内更精确地执行光谱红外发射率测量。 计算机（74）评估晶片发射率数据和高温计读数据，以实时确定真晶片温度，并提高或降低从电源（80）输出的功率，以调节装置（10）内的晶片温度 ）。

公开(公告)号：WO2019122815A1

公开(公告)日：2019-06-27

申请号：PCT/GB2018/053540

申请日：2018-12-06

Applicant: LAND INSTRUMENTS INTERNATIONAL LIMITED

Inventor： DROGMOLLER, Peter ,  TURNER, Susan Fiona

IPC: G01J5/00

CPC classification number: G01J5/0022 ,  G01J5/0003 ,  G01J2005/0029 ,  G01J2005/0074 ,  G01J2005/0077

Abstract: A metal strip production line measurement system is disclosed comprising a thermal imaging camera (8) configured to receive thermal radiation from a plurality of positions on a metal strip being conveyed along a production line and to generate an image based on the thermal radiation received. A temperature or emissivity calculation unit (34) is also provided within a processor (36) to determine temperature and/or emissivity for the plurality of positions which includes identifying and subtracting a reflected component in the radiation received at the thermal imaging camera from a position on the metal strip.

公开(公告)号：WO2015041273A1

公开(公告)日：2015-03-26

申请号：PCT/JP2014/074644

申请日：2014-09-18

Applicant: ブラザー工業株式会社

Inventor： 篠田　健太郎 ,  金田　英樹 ,  滝　和也

IPC: C23C16/52 ,  C23C16/511 ,  G01J5/00 ,  H05H1/00 ,  H05H1/46

CPC classification number: C23C16/511 ,  C23C16/52 ,  G01J5/0003 ,  G01J5/0044 ,  G01J2005/0048 ,  G01J2005/0074 ,  H01J37/32192 ,  H01J37/32724 ,  H01J37/32935 ,  H01J37/3299

Abstract: 　被加工材料の放射率と異なる放射率を有する膜の成膜中における被加工材料の表面温度を、放射温度計を用いて低誤差で測定することが可能となる成膜装置を提供する。処理容器内に配置された被加工材料の処理表面に沿ってプラズマを生成させるためのマイクロ波をマイクロ波供給口を介して供給するマイクロ波供給部と、被加工材料の処理表面に沿うシース層を拡大させる負のバイアス電圧を負電圧電極を介して被加工材料に印加する負電圧印加部と、処理容器に設けられた窓部の外側に配置されて被加工材料の処理表面の温度を測定する放射温度計と、成膜処理経過に応じて被加工材料の第１放射率と被加工材料の処理表面に成膜される皮膜の第２放射率とに基づいて設定された補正放射率と放射温度計の出力温度と放射温度計に設定された温度計設定放射率とを基に、成膜処理中における被加工材料の処理表面の表面温度を算出する温度算出部と、を備える。

Abstract translation: 提供一种成膜装置，其能够使用辐射温度计以低误差率测量当形成具有不同于待加工材料的发射率的发射率的膜时待加工材料的表面温度 。 本发明包括：微波供应单元，其经由微波供应端口沿着待处理材料的处理表面提供用于产生等离子体的微波，所述处理表面设置在处理容器内; 负电压施加单元，其通过负电压电极施加负极化电压，所述负偏压使得护套层沿着待加工材料的加工表面扩展到待加工材料; 辐射温度计，设置在设置于处理容器的窗单元的外侧，并测量待加工材料的加工面的温度; 以及温度计算单元，其计算在成膜处理期间待加工材料的处理表面的表面温度。 基于辐射温度计设定的校正发射率，辐射温度计的输出温度和温度计组发射率来计算表面温度。 校正发射率是根据成膜处理的进行情况设定的，其基于待加工材料的第一发射率和形成在待加工材料的加工表面上的涂膜的第二发射率。

公开(公告)号：WO2014067549A1

公开(公告)日：2014-05-08

申请号：PCT/EP2012/071393

申请日：2012-10-29

Applicant: PTC INNOVATION AB

Inventor： HAGQVIST, Petter

IPC: G01J5/00 ,  G01K7/00 ,  G01K7/02

CPC classification number: G01J5/004 ,  G01J2005/0051 ,  G01J2005/0074

Abstract: A method for measuring temperature of a sample based on the sample'sthermally emitted radiation is provided. The method is based on the assumption that the temperature of the sample at a specific point in time may be determined by using an emissivity of the sample at a preceding point in time, provided that the frequency at which the thermally emitted radiation is measured is sufficiently high. That is, by measuring the radiance from the sample at a high frequency, the change in emissivity and temperature over a short time interval are small enough for the emissivity at one point in time to be used for determining the temperature in a subsequent point in time. Thus, the invention provides for a method for real-time temperature measurements, while allowing for a time-varying emissivity.

Abstract translation: 提供了一种基于样品的发射辐射来测量样品的温度的方法。 该方法基于以下假设：可以通过使用先前时间点的样品的发射率来确定特定时间点处的样品的温度，条件是测量热发射辐射的频率足够 高。 也就是说，通过在高频下测量样品的辐射度，短时间间隔内的发射率和温度的变化足够小，以便在一个时间点的发射率用于确定随后的时间点中的温度 。 因此，本发明提供了用于实时温度测量的方法，同时允许时变发射率。

公开(公告)号：WO2013070917A1

公开(公告)日：2013-05-16

申请号：PCT/US2012/064153

申请日：2012-11-08

Applicant: APPLIED MATERIALS, INC. ,  PAN, Heng ,  ROGERS, Matthew Scott ,  HUNTER, Aaron Muir ,  MOFFATT, Stephen

Inventor： PAN, Heng ,  ROGERS, Matthew Scott ,  HUNTER, Aaron Muir ,  MOFFATT, Stephen

IPC: H01L21/66

CPC classification number: G01J5/08 ,  G01J5/0007 ,  G01J5/0803 ,  G01J2005/0074 ,  G01J2005/0077

Abstract: Embodiments of the present invention generally relate to apparatus for and methods of measuring and monitoring the temperature of a substrate having a 3D feature thereon. The apparatus include a light source for irradiating a substrate having a 3D feature thereon, a focus lens for gathering and focusing reflected light, and an emissometer for detecting the emissivity of the focused reflected light. The apparatus may also include a beam splitter and an imaging device. The imaging device provides a magnified image of the diffraction pattern of the reflected light. The method includes irradiating a substrate having a 3D feature thereon with light, and focusing reflected light with a focusing lens. The focused light is then directed to a sensor and the emissivity of the substrate is measured. The reflected light may also impinge upon an imaging device to generate a magnified image of the diffraction pattern of the reflected light.

Abstract translation: 本发明的实施例一般涉及用于测量和监测其上具有3D特征的基板的温度的方法的装置。 该装置包括用于照射其上具有3D特征的基板的光源，用于聚焦和聚焦反射光的聚焦透镜，以及用于检测聚焦反射光的发射率的发射计。 该装置还可以包括分束器和成像装置。 成像装置提供反射光的衍射图案的放大图像。 该方法包括用光照射具有3D特征的基板，并且将聚焦透镜聚焦在反射光上。 然后将聚焦的光导向传感器，并测量衬底的发射率。 反射光也可能撞击成像装置以产生反射光的衍射图案的放大图像。

公开(公告)号：US20230392987A1

公开(公告)日：2023-12-07

申请号：US17832296

申请日：2022-06-03

Applicant: Applied Materials, Inc.

Inventor： Wolfgang Aderhold

IPC: G01J5/00 ,  G01J5/80

CPC classification number: G01J5/0003 ,  G01J5/80 ,  G01J2005/0074

Abstract: Embodiments disclosed herein include a method of calibrating a processing tool. In an embodiment, the method comprises providing a first substrate with a first emissivity, a second substrate with a second emissivity, and a third substrate with a third emissivity. In an embodiment, the process may include running a recipe on each of the first substrate, the second substrate, and the third substrate, where the recipe includes a set of calibration attributes. In an embodiment, the method may further comprise measuring a layer thickness on each of the first substrate, the second substrate, and the third substrate. In an embodiment, the method further comprises determining if the layer thicknesses are uniform.