Abstract:
Ce dispositif comprend (a) un guide de lumière (2) formé sur un substrat (4) et comportant une couche guidante (8) destinée à véhiculer des faisceaux lumineux, intercalée entre une couche inférieure (6) et une couche supérieure ayant des indices de réfraction inférieurs à celui de la couche guidante, (b) une zone de mesure d'interaction (32) du guide de lumière destinée à être au contact du fluide (31), la couche supérieure au niveau de la zone de mesure présentant une épaisseur inférieure à la distance de pénétration de l'onde évanescente du faisceau lumineux guidé et en dehors de cette zone d'interaction une épaisseur supérieure à ladite distance de pénétration de cette même onde évanescente, et (c) un système optique du type interféromètre, formé au moins en partie dans le guide de lumière et comportant un circuit optique de référence (22, 26, 30) et un circuit optique de mesure (22, 32, 34) incluant la zone de mesure, pour mesurer le déphasage introduit par un changement d'indice effectif du mode guidé dû au fluide.
Abstract:
An exhaust gas detection assembly, comprising a sensing system comprising a wide-band light source and a detector, a probe configured for mounting in a port of a component of an engine exhaust system, and a fiber optic bundle connected between the sensing system and the probe to carry source light from the light source to the probe and reflected light from the probe to the detector, wherein the detector comprises a filter that passes reflected light received from the probe in a wavelength range corresponding to a wavelength range affected by the presence of a type of gas molecules in the probe.
Abstract:
A reflective element for directing an optical signal into a fiber optic sensor having an optical fiber includes a plane containing a sharply defined straight line that separates between a first area of low reflectivity and a second area of high reflectivity. The plane is disposed parallel to a free end surface of the optical fiber so that the free end surface intersects the line of the reflective element, whereby relative movement between the free end surface of the optical fiber and the line in response to a physical change sensed by the fiber optic sensor induces variations in an optical signal reflected by the reflective element through the optical fiber, which variations allow measurement of the physical change.
Abstract:
A sensor including an optical cavity capable of receiving the gas, and defined by first and second opposite ends and a connecting portion connecting said ends; a light source arranged to emit infrared light in the optical cavity; at least one infrared detector arranged to detect the infrared light; at least one mirror arranged in the optical cavity to guide the infrared light towards said at least one infrared detector; the sensor being remarkable in that it includes first and second reflective elements respectively extending at the first and second ends of the optical cavity, and having an infrared light reflection coefficient greater than or equal to 75% for any angle of incidence.
Abstract:
A method of forming a semiconductor structure includes forming a first optical waveguide and a second optical waveguide on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate. The method further includes etching a portion of the cladding layer to form a microfluidic channel therein and forming a capping layer on a top surface of the first optical waveguide, the second optical waveguide and the microfluidic channel.
Abstract:
A semiconductor structure includes a first optical waveguide and a second optical waveguide located on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate.
Abstract:
An optical sensor apparatus includes a light receiving element configured to produce an output according to a light receiving state, and an optical element including a reflecting layer including a metal film, and being arranged such that at least some of incident light on the light receiving element is light that is reflected by the reflecting layer. The optical element further includes a corrosion resistant layer for suppressing corrosion of the reflecting layer, and the reflecting layer includes a surface covered by the corrosion resistant layer formed by vapor plating.
Abstract:
The present disclosure concerns an apparatus (10) and method for reading out an optical chip (20). A light source (13) is arranged for emitting single mode source light (S1) from its emitter surface (A1) towards an optical input (21) of the optical chip (20). A light detector (14) is arranged for receiving measurement light (S2) impinging onto its receiver surface (A2) from an optical output (22) of the optical chip (20), and measuring said received measurement light (S2). The emitted source light (S1) is aligned to enter the optical input (21) of the optical chip (20) and the measurement light (S2) is aligned back onto the receiver surface (A2). The receiver surface (A2) is larger than the emitter surface (A1) for facilitating the overall alignment.
Abstract:
A detection device for specimens includes an image sensor, a light-guiding structure, and a carrier. The image sensor includes a sensing area and a non-sensing area around the sensing area. The light-guiding structure is disposed on the image sensor. The light-guiding structure includes a central guiding portion, a reflection layer, and first guiding portions. The central guiding portion is located over the sensing area. The reflection layer is disposed on the image sensor and includes channels located over the non-sensing area. The first guiding portions are located in the channels, and connected to the central guiding portion and a side surface of the light-guiding structure. The carrier is disposed on the light-guiding structure, and has wells located over the sensing area. Each of the wells is configured to receive a specimen.
Abstract:
The present disclosure relates to semiconductor devices for detecting fluorescent particles. At least one embodiment relates to an integrated semiconductor device for detecting fluorescent tags. The device includes a first layer, a second layer, a third layer, a fourth layer, and a fifth layer. The first layer includes a detector element. The second layer includes a rejection filter. The third layer is fabricated from dielectric material. The fourth layer is an optical waveguide configured and positioned such that a top surface of the fourth layer is illuminated with an evanescent tail of excitation light guided by the optical waveguide when the fluorescent tags are present. The fifth layer includes a microfluidic channel. The optical waveguide is configured and positioned such that the microfluidic channel is illuminated with the evanescent tail. The detector element is positioned such that light from activated fluorescent tags can be received.