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公开(公告)号：EP1329930B1
公开(公告)日：2005-09-07
申请号：EP01954347.9
申请日：2001-07-26
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： OHTOMO, Akihiko, c/o Hamamatsu Photonics K.K. , IHARA, Tsuneo, c/o Hamamatsu Photonics K.K. , MORI, Kuniyoshi, c/o Hamamatsu Photonics K.K. , NATSUME, Yoshiyuki, c/o Hamamatsu Photonics K.K.
CPC classification number: H01J43/28 , H01J43/08 , H01J2231/5016
Abstract: A photocathode in which the photocathode plate can be securely fixed without using any adhesive. Even under the severe condition that a high vibration resistance is required or thermal stress occurs because of great temperature variation, it can be used widely for an image intensifier, a streak tube, or a photomultiplier. The photocathode plate (16) of the photocathode (10) is sandwiched between a faceplate (11) and a support plate (19). First pins (12, 13) buried in the faceplate (11) are joined to the support plate (19). Therefore the photocathode plate (16) can be readily fixed securely to the faceplate (11) without using any adhesive. An electron tube is also disclosed.
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52.发明授权
公开(公告)号：EP0718865B1
公开(公告)日：2002-07-03
申请号：EP95309258.2
申请日：1995-12-19
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Niigaki, Minoru, c/o Hamamatsu Photonics K.K. , Hirohata, Toru, c/o Hamamatsu Photonics K.K. , Suzuki, Tomoko, c/o Hamamatsu Photonics K.K. , Yamada, Masami, c/o Hamamatsu Photonics K.K.
CPC classification number: H01J1/34 , H01J43/08 , H01J2201/3423
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53.发明公开
公开(公告)号：EP0718865A3
公开(公告)日：1998-02-04
申请号：EP95309258.2
申请日：1995-12-19
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Niigaki, Minoru, c/o Hamamatsu Photonics K.K. , Hirohata, Toru, c/o Hamamatsu Photonics K.K. , Suzuki, Tomoko, c/o Hamamatsu Photonics K.K. , Yamada, Masami, c/o Hamamatsu Photonics K.K.
CPC classification number: H01J1/34 , H01J43/08 , H01J2201/3423
Abstract: A photoelectric emission surface which is excellent in stability and reproducibility of photoelectric conversion characteristics and has a structure capable of obtaining a high photosensitivity is provided. A predetermined voltage is applied between an upper surface electrode (15) and a lower surface electrode (17) by a battery (18). Upon application of this voltage, a p-n junction formed between a contact layer (14) and an electron emission layer (13) is reversely biased. A depletion layer extends from the p-n junction into the photoelectric emission surface, and an electric field is formed in the electron emission layer and a light absorbing layer (12) in a direction for accelerating photoelectrons. When incident light is absorbed in the light absorbing layer into excite photoelectrons, the photoelectrons are accelerated by the electric field toward the emission surface. The photoelectrons obtain an energy upon this electric field acceleration, and are transited, in the electron emission layer, to a conduction band at a higher energy level, and emitted into a vacuum.
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公开(公告)号：EP0690477A2
公开(公告)日：1996-01-03
申请号：EP95304586.1
申请日：1995-06-29
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tateishi, Naohisa , Kato, Hisaki , Hikita, Katurou
Abstract: A photomultiplier includes a cathode supporting member, arranged in a tube and comprised of a conductive material, for holding a photocathode, and a holding mechanism, comprised of a heat conductive material, for biasing the cathode holding member to hold it. The holding mechanism is thermally connected to a cooler.
Abstract translation: 光电倍增管包括阴极支撑构件，其布置在管中并由用于保持光电阴极的导电材料构成，以及由导热材料构成的保持机构，用于偏压阴极保持构件以保持阴极支撑构件。 保持机构与冷却器热连接。
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55.发明公开
公开(公告)号：EP0437242A3
公开(公告)日：1992-01-29
申请号：EP91100196.4
申请日：1991-01-08
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Ohishi, Keiichi, c/o Hamamatsu Photonics K.K. , Suzuki, Hideaki, c/o Hamamatsu Photonics K.K. , Watanabe, Hiroyuki, c/o Hamamatsu Photonics K.K. , Takeuchi, Junichi, c/o Hamamatsu Photonics K.K.
CPC classification number: H01J9/12 , H01J43/08 , H01J2201/3426
Abstract: There is disclosed a process for forming a photocathode having high quantum yield which comprises the first step of making a number of fine concavities and convexities (14) in a surface (11) of a substrate (12) finished substantially in a mirror; the second step of blunting the fine concavities and convexities (14); and the third step of coating a photoelectron emissive material (15) on the surface of the substrate (12).
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Patent Agency Ranking56.发明专利
公开(公告)号：KR102239767B1
公开(公告)日：2021-04-12
申请号：KR1020157031186A
申请日：2014-04-01
Applicant: 케이엘에이 코포레이션
Inventor： 융-호 알렉스 추앙 , 데이빗 엘. 브라운 , 존 필든
IPC: H01J40/06 , H01J43/08 , H01L31/103
CPC classification number: H01J40/06 , H01J43/08 , H01L31/103
Abstract: 광전 증배관은 반도체 광전 음극 및 포토다이오드를 포함한다. 특히, 포토다이오드는 p-도핑 반도체 층, 다이오드를 형성하기 위해 상기 p-도핑 반도체 층의 제1 표면 상에 형성되는 n-도핑 반도체 층, 및 상기 p-도핑 반도체 층의 제2 표면 상에 형성되는 순수한 붕소 층을 포함한다. 상기 반도체 광전 음극과 상기 포토다이오드 사이의 갭은 약 1 mm 미만이거나 약 500 ㎛ 미만일 수 있다. 반도체 광전 음극은 갈륨 질화물 예를 들면, 하나 이상의 p-도핑 갈륨 질화물 층을 포함할 수 있다. 다른 실시예에서는, 반도체 광전 음극은 실리콘을 포함할 수도 있다. 이 반도체 광전 음극은 적어도 하나의 표면 상에 순수한 붕소 코팅을 더 포함할 수 있다.
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公开(公告)号：JP2016518683A
公开(公告)日：2016-06-23
申请号：JP2016506573
申请日：2014-04-01
Applicant: ケーエルエー−テンカー コーポレイション , ケーエルエー−テンカー コーポレイション
Inventor： ユン−ホ アレックス チュワン , ユン−ホ アレックス チュワン , デイビッド エル ブラウン , デイビッド エル ブラウン , ジョン フィールデン , ジョン フィールデン
CPC classification number: H01J40/06 , H01J43/08 , H01L31/02161 , H01L31/103
Abstract: 半導体光電陰極とフォトダイオードを含む光電子増倍管。特に、該フォトダイオードはp−型にドープされた半導体層と、該p−型にドープされた半導体層の第一の表面に形成されてダイオードを形成するn-型にドープされた半導体層と、該p−型にドープされた半導体層の第二の表面に形成された純ホウ素層とを含んでいる。半導体光電陰極とフォトダイオードの間のギャップはおよそ1mm未満であるか、あるいはおよそ500μm未満である。半導体光電陰極は窒化ガリウム、例えば一つ以上のp−型にドープされた窒化ガリウム層、を含んでいる。他の実施形態において、半導体光電陰極はケイ素を含んでいてもよい。この半導体光電陰極は更に少なくとも一つの表面に純ホウ素被覆を含んでいてもよい。
Abstract translation: 光电倍增管，其包括半导体光电阴极和光电二极管。 具体地，光电二极管是掺杂有p型半导体层，形成在所述掺杂的半导体层的第一表面上的p型掺杂的n型，以形成在半导体层上的二极管和 形成掺杂成p型的半导体层的第二表面上，和一个纯硼层。 半导体光电阴极和光电二极管之间的间隙或者是大于约1mm以下时，或小于约500微米。 半导体光电阴极包括氮化镓，例如，一个或掺杂的氮化镓层更p-型的。 在其它实施例中，半导体光电阴极可以包括硅。 半导体光电阴极还可以包括至少一个表面上的纯硼涂层。
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60.发明授权PHOTOMULTIPLIER TUBE, IMAGE SENSOR, AND AN INSPECTION SYSTEM USING A PMT OR IMAGE SENSOR 有权光电倍增管，图像传感器和使用PMT或图像传感器的检测系统
公开(公告)号：EP2973713B1
公开(公告)日：2017-11-29
申请号：EP14779717.9
申请日：2014-04-01
Applicant: KLA - Tencor Corporation
Inventor： CHUANG, Yung-Ho Alex , BROWN, David L. , FIELDEN, John
IPC: H01L31/0216 , H01J40/06 , H01J43/08 , H01L31/103
CPC classification number: H01J40/06 , H01J43/08 , H01L31/02161 , H01L31/103
Abstract: A photomultiplier tube includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. A gap between the semiconductor photocathode and the photodiode may be less than about 1 mm or less than about 500 μm. The semiconductor photocathode may include gallium nitride, e.g. one or more p-doped gallium nitride layers. In other embodiments, the semiconductor photocathode may include silicon. This semiconductor photocathode can further include a pure boron coating on at least one surface.
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