公开(公告)号：WO2006113146A2

公开(公告)日：2006-10-26

申请号：PCT/US2006/012847

申请日：2006-04-07

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION ,  WATSON, Sterling, G. ,  LEVY, Ady ,  MACK, Chris, A. ,  STOKOWSKI, Stanley, E. ,  SAIDIN, Zain, K. ,  ZURBRICK, Larry, S.

Inventor： WATSON, Sterling, G. ,  LEVY, Ady ,  MACK, Chris, A. ,  STOKOWSKI, Stanley, E. ,  SAIDIN, Zain, K. ,  ZURBRICK, Larry, S.

IPC: G03F1/00 ,  G03C5/00 ,  G06K9/00

CPC classification number: G06K9/2063 ,  G03F1/72 ,  G03F1/84 ,  Y10S430/146

Abstract: Disclosed are systems and methods for modifying a reticle. In general, inspection results from a plurality of wafers or prediction results from a lithographic model are used to individually decrease the dose or any other optical property at specific locations of the reticle. In one embodiment, any suitable optical property of the reticle is modified by an optical beam, such as a femto-second laser, at specific locations on the reticle so as to widen the process window for such optical property. Examples of optical properties include dose, phase, illumination angle, and birefringence. Techniques for adjusting optical properties at specific locations on a reticle using an optical beam may be practiced for other purposes besides widening the process window.

Abstract translation: 公开了用于修改掩模版的系统和方法。 通常，来自多个晶片的检查结果或来自光刻模型的预测结果被用于单独地减小光罩的特定位置处的剂量或任何其它光学特性。 在一个实施例中，掩模版的任何合适的光学性质通过光束（例如毫微微秒级激光器）在掩模版上的特定位置处被修改，以便加宽用于这种光学性质的工艺窗口。 光学性质的实例包括剂量，相位，照射角度和双折射率。 使用光束在光罩上的特定位置处调整光学特性的技术可以用于除加宽工艺窗口之外的其它目的。

公开(公告)号：WO2006055824A2

公开(公告)日：2006-05-26

申请号：PCT/US2005/041925

申请日：2005-11-18

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION ,  BROWN, David, Lee ,  CHUANG, Yung-ho

Inventor： BROWN, David, Lee ,  CHUANG, Yung-ho

IPC: H04N5/335 ,  H04N7/18

CPC classification number: H04N5/37206 ,  H04N5/372

Abstract: A method and apparatus for propagating charge through a time division and integration (TDI) sensor is provided. The method and apparatus may be used with the TDI sensor to inspect specimens, the TDI sensor operating to advance an accumulated charge between gates of the TDI sensor. The design comprises controlling voltage waveform shaped for waveforms advancing the accumulated charge between gates in a substantially nonsquare waveform, such as a composite, sinusoidal, or other shaped waveform. Controlling voltage waveform shapes operates at different voltage phases in adjacent gates to provide a substantially de minimis net voltage.

Abstract translation: 提供了一种通过时分和积分（TDI）传感器传播电荷的方法和装置。 该方法和装置可以与TDI传感器一起使用，以检查样品，TDI传感器操作以提前TDI传感器的门之间的累积电荷。 该设计包括控制电压波形，其形状用于在基本上非正方形波形（例如复合，正弦波形或其他形状波形）之间推进门之间的累积电荷的波形。 控制电压波形形状在相邻门中的不同电压相位下工作，以提供基本上最小的净电压。

公开(公告)号：WO2005094304A3

公开(公告)日：2005-10-13

申请号：PCT/US2005/010322

申请日：2005-03-28

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION ,  ARMSTRONG, J., Joseph ,  CHUANG, Yung-Ho ,  SHAFER, David, R.

Inventor： ARMSTRONG, J., Joseph ,  CHUANG, Yung-Ho ,  SHAFER, David, R.

IPC: G02B17/00 ,  G02B21/00 ,  G02B23/00 ,  G02B5/08 ,  G02B13/14 ,  G02B5/10

Abstract: A reduced size catadioptric inspection system employing a catadioptric objective and immersion substance is disclosed. The objective may be employed with light energy having a wavelength in the range of approximately 190 nanometers through the infrared light range, and can provide numerical apertures in excess of 0.9. Elements are less than 100 millimeters in diameter and may fit within a standard microscope. The objective comprises a focusing lens group, a field lens, a Mangin mirror arrangement, and an immersion substance or liquid between the Mangin mirror arrangement and the specimen. A variable focal length optical system for use with the objective in the catadioptric inspection system is also disclosed.

公开(公告)号：WO2005079498A2

公开(公告)日：2005-09-01

申请号：PCT/US2005/005253

申请日：2005-02-17

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION ,  ADEL, Michael, E. ,  SELIGSON, Joel, L. ,  KANDEL, Daniel

Inventor： ADEL, Michael, E. ,  SELIGSON, Joel, L. ,  KANDEL, Daniel

IPC: G01B11/00 ,  G03F7/00 ,  G03F7/20 ,  H01L21/66

CPC classification number: G03F7/70683 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/70633 ,  H01L22/12

Abstract: The present invention relates to overlay marks and methods for determining overlay error. One aspect of the present invention relates to a continuously varying offset mark. The continuously varying offset mark is a single mark that includes over laid periodic structures, which have offsets that vary as a function of position. By way of example, the periodic structures may correspond to gratings with different values of a grating characteristic such as pitch. Another aspect of the present invention relates to methods for determining overlay error from the continuously varying offset mark. The method generally includes determining the center of symmetry of the continuously varying offset mark and comparing it to the geometric center of the mark. If there is zero overlay, the center of symmetry tends to coincide with the geometric center of the mark. If overlay is non zero (e.g., misalignment between two layers), the center of symmetry is displaced from the geometric center of the mark. The displacement in conjunction with the preset gain of the continuously varying offset mark is used to calculate the overlay error.

Abstract translation: 本发明涉及覆盖标记和确定覆盖误差的方法。 本发明的一个方面涉及连续变化的偏移标记。 连续变化的偏移标记是包括过度周期性结构的单个标记，其具有作为位置的函数而变化的偏移。 作为示例，周期性结构可以对应于具有诸如间距的光栅特性的不同值的光栅。 本发明的另一方面涉及用于从连续变化的偏移标记确定覆盖误差的方法。 该方法通常包括确定连续变化的偏移标记的对称中心并将其与标记的几何中心进行比较。 如果有零覆盖，则对称中心倾向于与标记的几何中心重合。 如果覆盖层不为零（例如，两层之间的未对准），则对称中心从标记的几何中心位移。 使用与连续变化的偏移标记的预设增益相结合的位移来计算重叠误差。

公开(公告)号：WO2005036634A2

公开(公告)日：2005-04-21

申请号：PCT/US2004/026548

申请日：2004-08-16

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION

Inventor： CHEN, Chien-Huei ,  BHAGAT, Vivek ,  SONG, Qiang ,  QUIGLEY, James A. ,  KULKARNI, Ashok V. ,  ISRANI, Rohit G.

IPC: H01L21/66

CPC classification number: G05B19/41875 ,  G01N21/8851 ,  G01N2021/8874 ,  G05B23/0235 ,  G05B2219/32184 ,  G05B2219/32222 ,  G05B2219/45031 ,  Y02P90/20 ,  Y02P90/22

Abstract: Characteristics of an inspection piece are sensed and analyzed to identify anomalies having level information. The level information is analyzed with an initial set of thresholds of inspection system parameters, and an initial portion of the anomalies are flagged as defects. A summary of the flagged anomalies is displayed, and an operating curve of potential flagged defects versus threshold parameters is also displayed. The parameters are selectively changed to form modified thresholds, and the level information of the anomalies is analyzed with the modified thresholds. An updated portion of anomalies is flagged as defects based on the immediately preceding analysis of the level information, and a summary of the flagged anomalies is displayed along with the recomputed operating curves. The steps of selectively changing thresholds and reflagging defects are repeated as desired, and the modified set of thresholds parameters is stored for use in an inspection system recipe.

Abstract translation: 感测和分析检查件的特性以识别具有液位信息的异常。 水平信息用检查系统参数的初始阈值分析，异常的初始部分被标记为缺陷。 显示标记异常的摘要，并显示潜在的标记缺陷与阈值参数的操作曲线。 这些参数被选择性地改变以形成修改的阈值，并且用修改的阈值分析异常的级别信息。 更新的部分异常被标记为基于水平信息的紧接在前的分析的缺陷，并且标记的异常的摘要与重新计算的操作曲线一起显示。 根据需要重复选择性地改变阈值和重新填充缺陷的步骤，并且存储修改的阈值参数集合以用于检查系统配方。

公开(公告)号：WO2005017952A3

公开(公告)日：2005-02-24

申请号：PCT/US2004/011127

申请日：2004-04-09

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION ,  BEVIS, Christopher, F. ,  SULLIVAN, Paul, J. ,  SHORTT, David, W. ,  KREN, George, J.

Inventor： BEVIS, Christopher, F. ,  SULLIVAN, Paul, J. ,  SHORTT, David, W. ,  KREN, George, J.

IPC: G01N21/00

Abstract: An inspection tool embodiment includes an illumination source for directing a light beam onto a workpiece to generate scattered light that includes the ordinary scattering pattern of the workpiece as well as light scattered from defects of the workpiece. The embodiment includes a programmable light selection array that receives light scattered from the workpiece and selectively directs the light scattered from defects onto a photosensor which detects the defect signal. Processing circuitry receives the defect signal and conducts surface analysis of the workpiece that can include the characterizing of defects of the workpiece. The programmable light selection arrays can include, but are not limited to, reflector arrays and filter arrays. The invention also includes associated surface inspection methods.

公开(公告)号：WO2004105087A3

公开(公告)日：2004-12-02

申请号：PCT/US2004/014926

申请日：2004-05-12

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION ,  KUHLMANN, Lionel ,  GAO, Jianbo ,  SWEENEY, Mark, C.

Inventor： KUHLMANN, Lionel ,  GAO, Jianbo ,  SWEENEY, Mark, C.

IPC: G01N21/00

Abstract: Disclosed are methods and apparatus for analyzing the Haze data provided by an optical inspection tool. The Haze data is analyzed so as to detect defects associated with the specimen surface (202). In general, the Haze data is first conditioned so that background noise which corresponds to low frequency variation on the specimen is separated or removed from the Haze data prior to analysis of such Haze data (204). In a specific embodiment, low frequency variations in the specimen surface are characterized, in effect, as an optical surface upon which an incident beam is directed (204). In one example, the Haze data that corresponds to the specimen surface is characterized with a polynomial equation, such as a Zernike equation. In other words, a polynomial equation is fit to the low frequency or background noise of the Haze data (204). The Haze data that conforms to this resulting polynomial equation is then subtracted from the original Haze data to result in residual data (206), where slow variations in surface roughness are subtracted out, leaving possible defect information in the residual Haze data. This residual Haze data may then be analyzed to determine whether the specimen contains a defect (208).

公开(公告)号：WO2004097903A2

公开(公告)日：2004-11-11

申请号：PCT/US2004/013642

申请日：2004-04-29

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION ,  TOTH, Gabor, D. ,  BAKKER, David, R.

Inventor： TOTH, Gabor, D. ,  BAKKER, David, R.

IPC: H01L

CPC classification number: H01L22/20 ,  G01N21/9501 ,  G06T7/0004 ,  G06T2207/30148 ,  H01L22/12 ,  H01L2924/014

Abstract: Methods and apparatus for efficiently analyzing defects in-line on a wafer by wafer basis are provided. In general terms, embodiments of the present invention provide a simple interface (158, 500) for setting up the entire inspection and defect analysis process in a single set up procedure. In one embodiment, an apparatus for analyzing defects on specimens (100) is disclosed. The apparatus includes an inspection station for inspecting a specimen for potential defects (102) and a review station for analyzing a sample of the potential defects to determine a classification of such potential defects (104). The apparatus further includes a computer system (152) having an application interface (158, 500) operable to allow a user to set up the inspection station and the review station during a same setup phase so as to allow the inspection station and the review station to then operate automatically to provide defect information for one or more specimens based on the user set up. Techniques for using such apparatus are also disclosed.

Abstract translation: 提供了通过晶片来有效地分析晶片上的在线缺陷的方法和装置。 一般来说，本发明的实施例提供了用于在单个设置过程中设置整个检查和缺陷分析过程的简单接口（158,500）。 在一个实施例中，公开了一种用于分析样本（100）上的缺陷的装置。 该装置包括用于检查潜在缺陷的样本的检查站（102）和用于分析潜在缺陷的样本的检查站，以确定这种潜在缺陷的分类（104）。 该装置还包括具有应用程序接口（158,500）的计算机系统（152），该应用程序接口（158,500）可操作以允许用户在相同的设置阶段设置检查站和检查站，以便允许检查站和检查站 然后根据用户设置自动运行一个或多个标本的缺陷信息。 还公开了使用这种装置的技术。

公开(公告)号：WO2004097519A3

公开(公告)日：2004-11-11

申请号：PCT/US2004/012506

申请日：2004-04-22

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION ,  ADEL, Michael ,  GHINOVKER, Mark ,  MACK, Chris, A.

Inventor： ADEL, Michael ,  GHINOVKER, Mark ,  MACK, Chris, A.

IPC: G01B9/00

Abstract: A method of inspecting a phase shift mask is disclosed. The method includes receiving a mask having an alternating phase shift pattern. The method also includes forming the alternating phase shift pattern on a wafer (102). The method further includes analyzing the alternating phase shift pattern on the wafer (104) to determine the phase difference of the alternating phase shift pattern (106).

公开(公告)号：WO2004021023A1

公开(公告)日：2004-03-11

申请号：PCT/US2003/020613

申请日：2003-06-25

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION

Inventor： NASSER-GHODSI, Mehran

IPC: G01R31/26

CPC classification number: H01J37/3056 ,  H01J37/304 ,  H01J2237/244 ,  H01J2237/30466

Abstract: Techniques for detecting endpoints during semiconductor dry-etching processes are described. The dry-etching process of the present invention involves using a combination of a reactive material and a charged particle beam, such as an electron beam. In another embodiment, a photon beam is used to facilitate the etching process. The endpoint detection techniques involve monitoring the emission levels of secondary electrons and backscatter electrons together with the current within the sample. Depending upon the weight given to each of these parameters, an endpoint is identified when the values of these parameters change more than a certain percentage, relative to an initial value for these values.

Abstract translation: 描述了在半导体干蚀刻工艺期间检测端点的技术。 本发明的干蚀刻方法包括使用反应性材料和带电粒子束（例如电子束）的组合。 在另一个实施例中，使用光子束来促进蚀刻工艺。 端点检测技术包括监测二次电子和反向散射电子的发射水平以及样品内的电流。 根据给予每个这些参数的重量，当这些参数的值相对于这些值的初始值改变多于一定百分比时，将识别端点。