Abstract:
A semiconductor device comprising an infrared sensor assembly for sensing infrared radiation is described. The infrared sensor assembly comprises a single sensing element for sensing infrared radiation and an aperture means comprising a plurality of apertures. The sensing element and the aperture means thereby are positioned with respect to each other so that the plurality of apertures are positioned in front of the same, single sensing element so that the plurality of apertures limit the field of view of the same, single sensing element for impinging radiation.
Abstract:
A device for current measurement comprises a substrate with a first current conductor and a current sensor with a second current conductor. The current sensor is mounted above the first current conductor on the substrate. The second current conductor is formed with integrally attached first and second terminal leads through which the current to be measured is supplied and discharged. The current sensor further comprises a semiconductor chip with a magnetic field sensor mounted on the second current conductor on the side of the second current conductor facing the substrate. The magnetic field sensor is sensitive to a component of the magnetic field extending parallel to the surface of the semiconductor chip and perpendicular to the second current conductor. The second current conductor extends above and parallel to the first current conductor.
Abstract:
A method is for processing transmission errors during contactless communication of information between a device and a reader. The information may be transmitted in the form of frames sent to a send/receive module of the reader in contactless coupling with the device and controlled by a control module coupled to the send/receive module. The information may be extracted from the frames within the send/receive module so as to be delivered to the control module. The method may include a detection of transmission errors that are to be ignored.
Abstract:
The present invention relates to an electronic device, the electronic device comprising at least one LED, a driving unit for applying a driving algorithm for driving the LED during normal operation, and a measurement unit for determining a forward voltage of the LED by imposing a test current to the LED, the measurement unit being programmed for determining test current characteristics taking into account said driving algorithm.
Abstract:
An analog to digital converters (ADC) is for converting an input signal into a digital value. In the ADC, a successive approximation register is connected with its output to a first digital to analog converter (DAC), to a second DAC. A switch matrix is configured for capacitively coupling the input signal between the first input and the second input of the comparator or for capacitively coupling an output signal of the first DAC or an output signal of the second DAC or both between the first input and the second input of the comparator. The ADC includes a comparator switch between the first and the second input of the comparator. An output of the comparator is connected to an input of the successive approximation register.
Abstract:
A semiconductor pressure sensor for measuring an external pressure exerted on the sensor, comprising a membrane as part of a semiconductor substrate for being deformed due to the external pressure, a first group of neighboring resistors comprising a sensing resistor pair and a compensating resistor pair and a second group of neighboring resistors comprising a sensing resistor pair and a compensating resistor pair, wherein the sensing resistor pairs are located on or adjacent to the membrane edge and wherein the compensating resistor pairs are located at least partially outside the membrane or on a zero stress zone of the membrane, and wherein the resistors of each resistor pair are orthogonal, and wherein the resistors are connected in a Wheatstone bridge configuration.
Abstract:
A method for diagnosing an optical sensor includes a photodetector and an integrator. The method comprises exposing the photodetector to incoming light; obtaining an initial integrated signal at an initial frame; at least once executing the steps of changing at least one control parameter of the optical sensor, exposing the photodetector to incoming light, and obtaining one or more subsequent integrated signals at a subsequent frame; obtaining a characteristic of the optical sensor from the obtained integrated signals; comparing the obtained characteristic with a pre-determined characteristic of the optical sensor to diagnose the optical sensor.
Abstract:
A method of manufacturing a sensor device (100) comprises forming (200) a substrate (102) comprising a sensor element followed by forming (202) a cap layer (104). The cap layer (104) is then bonded (204) to the substrate (102) before the substrate (102) is thinned (206). A via is formed (210) between the sensor element and a back side of the thinned substrate (102). An electrical connection is provided between the sensor element and the back side of the thinned substrate (102). A mask is formed (208) on the cap layer (104) to define an area about a predetermined window region (108) before forming (210) of the via. A portion of the cap layer (104) about the predetermined window region (108) of the cap layer (104) is removed (212) after formation (210) of the via.
Abstract:
A photonic mixer device for multiplying an impinging optical signal with a reference electrical signal includes: a semiconductor substrate of a first conductivity type; two detector regions of a second conductivity type different from the first conductivity type; two biasing regions of the first conductivity type with a higher dopant concentration than the dopant concentration of the semiconductor substrate, each biasing region positioned near one of the respective detector regions, wherein an electrical field can be formed in the semiconductor substrate by applying a voltage bias between the biasing regions; two bias electrodes, which are isolated from the substrate and the biasing regions, wherein each bias electrode is only locally, partially or completely, covering an outer edge of one of the respective biasing regions.
Abstract:
A thermal imaging apparatus comprising: a thermal detector device (100) comprising an array of thermal sensing pixels (102) and signal processing circuitry (104) coupled to the detector device (100). The circuitry (104) supports a background identifier (110) and a pixel classifier (112), the background identifier (110) comprising a common intensity identifier (114) and an expected background intensity calculator (116). The background identifier (110) receives pixel measurement data captured by the detector device (100) in respect of pixels of the array (102) and the common intensity identifier (114) identifies a largest number of substantially the same pixel intensity values from the pixel measurement data. The expected background intensity calculator (116) uses the largest number of substantially the same pixel intensity values to generate a model of expected background intensity levels. The pixel classifier (112) uses the model to determine whether an intensity measurement by a pixel (118) of the array (102) corresponds to a background or an object in an image.