Abstract:
PROBLEM TO BE SOLVED: To provide a compact and low-cost current sensor.SOLUTION: A current sensor includes: a plastic package 7; a conductor 3 having a built-in first electric terminal 4 and second electric terminal 5, to which a current to be measured is supplied and discharged; third electric terminals 6; and a semiconductor chip 1 which has at least one magnetic field sensor 2 that reacts to a magnetic field component generated by a current that flows through the conductor 3 and runs vertically with respect to an active surface of the semiconductor chip 1. The first electric terminal 4 and second electric terminal 5 are arranged on a first side of the package 7, and the third electric terminals 6 are arranged on a side opposite to the first side of the package 7. The semiconductor chip 1 is mounted as a flip chip. The semiconductor chip 1 includes: first bumps 8 that are electrically connected with the third terminals 6; and second bumps 9 that are located on the conductor 3 and are electrically separated from the semiconductor chip 1 via an insulating layer.
Abstract:
PROBLEM TO BE SOLVED: To provide a current sensor which can shield an external interference field effectively and can be attached in a simple manner.SOLUTION: A device for measuring a current flowing through an electric cable comprises a printed circuit board 2, a magnetic field sensor 3 and a ferromagnetic component 4. The ferromagnetic component 4 comprises two tongues 9A and 9B whose front faces 10 are disposed opposite of each other and are separated by an air gap and further comprises at least two feet 8, with the tongues 9A and 9B and/or the feet 8 being bent off. A cable 1 is guidable through an opening 13 which is enclosed by the ferromagnetic component 4. The ferromagnetic component 4 and the magnetic field sensor 3 are mounted on a surface 5 of the printed circuit board 2. The magnetic field sensor 3 is sensitive to a magnetic field extending in parallel to the surface 5 of the printed circuit board 2. The tongues 9A and 9B of the ferromagnetic component 4 extend in parallel to the surface 5 of the printed circuit board 2.
Abstract:
PROBLEM TO BE SOLVED: To provide a stress sensor for measuring mechanical stresses in a semiconductor chip, which compensates for sensitivity variations by a simple method.SOLUTION: A stress sensor has four integrated resistors Rto Rintegrally arranged on an operation surface 3 of a semiconductor chip 2. The integrated resistors Rto Rform a Wheatstone bridge, in which the resistors Rand Rarranged on one opposite sides are p-type resistors and the resistors Rand Rarranged on the other opposite sides are n-type resistors.
Abstract:
PROBLEM TO BE SOLVED: To guarantee assignment of an address to an addressable participant element even in the case of variance in supply voltage, number of participant elements on a bus, etc.SOLUTION: A method for addressing each of a plurality of addressable participant elements 116 in a bus system 110 comprising a control unit 112, a bus 114, and the addressable participant elements 116 connected to the bus comprises: a step a) of pre-selecting at least a first number (N1) of participant elements; a step b) of selecting a second number (N2) of participant elements from the pre-selected participant elements; and a step c) of assigning one or more addresses to them; and a step of repeating the steps a) to c). The selection and pre-selection are performed based on current sources CS1 and CS2, specific threshold values, and measurement error. The bus system 110 and an addressable device 116 are also claimed.
Abstract:
PROBLEM TO BE SOLVED: To provide a vertical Hall sensor integrated in a semiconductor chip (1) and a method for production thereof.SOLUTION: The vertical Hall sensor has an electrically conductive well (2) of a first conductivity type, which is embedded in an electrically conductive region (3) of a second conductivity type. Electrical contacts (4) are arranged along a straight line (6) on a planar surface (5) of the electrically conductive well (2). The electrically conductive well (2) is generated by means of high-energy ion implantation and subsequent heating, so that it has a doping profile which either has a maximum located at a depth Tfrom the planar surface (5) of the electrically conductive well (2), or is essentially constant up to a depth T.