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公开(公告)号:US10522791B2
公开(公告)日:2019-12-31
申请号:US16035494
申请日:2018-07-13
Applicant: PIXELLIGENT TECHNOLOGIES LLC
Inventor: Zhiyun Chen , Gregory D. Cooper
Abstract: This presently disclosed technology relates Organic Light Emitting Diodes (OLEDs), more particularly it relates to OLED display light extraction and nanocomposite formulations that can be used for the light extraction structure.
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公开(公告)号:US20190144682A1
公开(公告)日:2019-05-16
申请号:US16244915
申请日:2019-01-10
Applicant: PIXELLIGENT TECHNOLOGIES LLC
Inventor: Wei XU , Xia BAI , Maneesh BAHADUR , Linfeng GOU , Lei ZHENG , James CRINITI , Gregory COOPER , Serpil Gonen WILLIAMS
Abstract: The present disclosure provides nanocrystals(s) containing silicone capping agent(s). Dispersions containing the nanocrystal(s) and at least one of silicone monomer(s), silicone pre-polymer(s), and silicone polymer(s), and optionally additionally containing a solvent are also described. Cured dispersions, compositions of nanocrystal(s) and LEDs and related structures containing the composition(s) are provided in the present disclosure.
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公开(公告)号:US10179860B2
公开(公告)日:2019-01-15
申请号:US15022826
申请日:2014-09-23
Applicant: PIXELLIGENT TECHNOLOGIES LLC
Inventor: Wei Xu , Xia Bai , Maneesh Bahadur , Linfeng Gou , Lei Zheng , James Criniti , Gregory Cooper , Serpil Gonen Williams
IPC: C09C3/12 , C09C3/10 , H01L33/56 , H01L23/29 , H01L27/32 , C09D183/06 , H01L33/50 , C01G25/02 , H01L51/52
Abstract: The present disclosure provides nanocrystal(s) containing silicone capping agent(s). Dispersions containing the nanocrystal(s) and at least one of silicone monomer(s), silicone pre-polymer(s), and silicone polymer(s), and optionally additionally containing a solvent are also described. Cured dispersions, compositions of nanocrystal(s) and LEDs and related structures containing the composition(s) are provided in the present disclosure.
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公开(公告)号:US10050236B2
公开(公告)日:2018-08-14
申请号:US14903822
申请日:2014-07-08
Applicant: PIXELLIGENT TECHNOLOGIES LLC
Inventor: Zhiyun Chen , Gregory D. Cooper
CPC classification number: H01L51/5275 , G02B3/0056 , G02B3/0087 , H01L27/3211 , H01L51/5253
Abstract: This presently disclosed technology relates to Organic Light Emitting Diodes (OLEDs), more particularly it relates to OLED display extraction and nanocomposite formulations that can be used for the light extraction structure. The OLEDs comprise, in order, an encapsulation layer or a substrate layer, an array of lenses, and an array of light emitting pixels at least partially covered by said array of lenses, wherein at least one of the lenses covers at least one of the pixel, and said lenses comprises a material with higher refractive index than the encapsulation layer or substrate layer.
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公开(公告)号:US09359689B2
公开(公告)日:2016-06-07
申请号:US13661740
申请日:2012-10-26
Applicant: PIXELLIGENT TECHNOLOGIES, LLC
Inventor: Wei Xu , Yijun Wang , Robert J. Wiacek , Xia Bai , Linfeng Gou , Selina I. Thomas , Zehra Serpil Gonen Williams , Jun Xu , Rakesh Patel
Abstract: Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1-10 nm) particle size with minimal aggregation and can be synthesized with high yield. The capping agents on the as-synthesized nanocrystals as well as nanocrystals which have undergone cap exchange reactions result in the formation of stable suspensions in polar and nonpolar solvents which may then result in the formation of high quality nanocomposite films.
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公开(公告)号:US09328432B2
公开(公告)日:2016-05-03
申请号:US14310003
申请日:2014-06-20
Applicant: PIXELLIGENT TECHNOLOGIES, LLC
Inventor: Zehra Serpil Gonen Williams , Yijun Wang , Robert J. Wiacek , Xia Bai , Linfeng Gou , Selina I. Thomas , Wei Xu , Jun Xu , Rakesh Patel
IPC: C08K3/18 , H01L21/20 , C30B29/16 , B82Y30/00 , B82Y40/00 , C30B7/14 , H01L21/02 , C30B7/10 , C30B29/32 , H01L51/00 , H01B1/14 , H01B1/20
CPC classification number: C30B29/16 , B82Y30/00 , B82Y40/00 , C07F7/1804 , C07F7/28 , C30B7/10 , C30B7/14 , C30B29/32 , H01B1/14 , H01B1/20 , H01B1/22 , H01L21/02565 , H01L21/02601 , H01L21/02628 , H01L51/005 , H01L51/0094 , Y10S977/774 , Y10S977/896 , Y10S977/932
Abstract: Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1-10 nm) particle size with minimal aggregation and can be synthesized with high yield. The capping agents on the as-synthesized nanocrystals as well as nanocrystals which have undergone cap exchange reactions result in the formation of stable suspensions in polar and nonpolar solvents which may then result in the formation of high quality nanocomposite films.
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公开(公告)号:US20150203989A1
公开(公告)日:2015-07-23
申请号:US14551720
申请日:2014-11-24
Applicant: PIXELLIGENT TECHNOLOGIES, LLC.
Inventor: Wei XU , Zehra Serpil GONEN WILLIAMS , Yijun WANG , Robert J. WIACEK , Xia BAI , Linfeng GOU , Selina I. THOMAS , Jun XU
CPC classification number: C30B29/16 , B82Y30/00 , B82Y40/00 , C07F7/1804 , C07F7/28 , C30B7/10 , C30B7/14 , C30B29/32 , H01B1/14 , H01B1/20 , H01B1/22 , H01L21/02565 , H01L21/02601 , H01L21/02628 , H01L51/005 , H01L51/0094 , Y10S977/774 , Y10S977/896 , Y10S977/932
Abstract: Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1-10 nm) particle size with minimal aggregation and can be synthesized with high yield. The capping agents on the as-synthesized nanocrystals as well as nanocrystals which have undergone cap exchange reactions result in the formation of stable suspensions in polar and nonpolar solvents which may then result in the formation of high quality nanocomposite films.
Abstract translation: 描述了半导体纳米晶体及其在溶剂和其它介质中的分散体的制备。 本文所述的纳米晶体具有小(1-10nm)的粒度,具有最小的聚集,并且可以高产率合成。 在合成后的纳米晶体上的封端剂以及经历了帽交换反应的纳米晶体导致在极性和非极性溶剂中形成稳定的悬浮液,这可能导致形成高质量的纳米复合膜。
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公开(公告)号:US20150203709A1
公开(公告)日:2015-07-23
申请号:US14591504
申请日:2015-01-07
Applicant: PIXELLIGENT TECHNOLOGIES LLC
Inventor: Gregory COOPER , Wei Xu , Zhiyun Chen
IPC: C09D135/02 , B05D7/00 , C08K3/22
CPC classification number: C09D135/02 , B82Y30/00 , C08K3/22 , C08K2003/2241 , C08K2201/011 , C08L33/06 , C09D4/00 , C09D5/00 , C09D7/62 , C09D133/06 , H01L51/5268 , H01L51/5275 , H01L2251/5346 , H01L2251/5369 , Y10T428/31645 , Y10T428/31667 , Y10T428/31786 , Y10T428/31909 , Y10T428/31938 , C08F220/10
Abstract: The present invention relates to an OLED internal light extraction scheme with graded-index layer and embedded scattering particles.
Abstract translation: 本发明涉及具有渐变折射率层和嵌入散射粒子的OLED内部光提取方案。
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公开(公告)号:US08993221B2
公开(公告)日:2015-03-31
申请号:US13764514
申请日:2013-02-11
Applicant: Pixelligent Technologies, LLC
Inventor: Gregory D. Cooper , Brian L. Wehrenberg
IPC: G03F7/26 , G03F7/004 , G03F7/20 , H01L29/06 , G03F7/00 , G03F7/039 , H01L21/027 , B81C1/00 , B82Y10/00 , B82Y40/00
CPC classification number: H01L21/0274 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/004 , G03F7/039 , G03F7/20 , G03F7/38 , H01L21/0271 , H01L21/324 , H01L21/82 , H01L27/04 , H01L29/06
Abstract: An integrated circuit is made by depositing a pinning layer on a substrate. A block copolymer photoresist is formed on the pinning layer. The block copolymer has two blocks A and B that do not self-assemble under at least some annealing conditions. The exposed block copolymer photoresist is processed to cleave at least some block copolymer bonds in the exposed selected regions. The exposed pinning layer is processed to create a chemical epitaxial pattern to direct the local self assembly of the block copolymer.
Abstract translation: 通过在衬底上沉积钉扎层来制成集成电路。 在钉扎层上形成嵌段共聚物光致抗蚀剂。 嵌段共聚物具有在至少一些退火条件下不自组装的两个嵌段A和B。 处理暴露的嵌段共聚物光致抗蚀剂以在暴露的所选区域中切割至少一些嵌段共聚物键。 处理暴露的钉扎层以产生化学外延图案以引导嵌段共聚物的局部自组装。
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公开(公告)号:US20130207238A1
公开(公告)日:2013-08-15
申请号:US13764514
申请日:2013-02-11
Applicant: Pixelligent Technologies, LLC
Inventor: Gregory D. COOPER , Brian L. WEHRENBERG
CPC classification number: H01L21/0274 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/004 , G03F7/039 , G03F7/20 , G03F7/38 , H01L21/0271 , H01L21/324 , H01L21/82 , H01L27/04 , H01L29/06
Abstract: An integrated circuit is made by depositing a pinning layer on a substrate. A block copolymer photoresist is formed on the pinning layer. The block copolymer has two blocks A and B that do not self-assemble under at least some annealing conditions. The exposed block copolymer photoresist is processed to cleave at least some block copolymer bonds in the exposed selected regions. The exposed pinning layer is processed to create a chemical epitaxial pattern to direct the local self assembly of the block copolymer.
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