Abstract:
Method and apparatus for exposing photo resists using programmable masks increases imaging resolution to provide fully dense integrated circuit patterns made of very small features on photoresist-coated silicon wafers by optical lithography. Small features are created by means of overlap exposure with either programmable or conventional masks. Blocking photoresists responding differently to two different wavelengths of light, two-color photoresists requiring two wavelengths of light to change solubility, and two-photon photoresists which change solubility only by absorbing two photons at a time may be used.
Abstract:
The present disclosure provides a high-refractive index acrylic formulation embedded with sub-30 nm metal oxide nanocrystals. The formulation is solvent-free, low-viscosity, inkjettable (among other film deposition techniques) and produces high-refractive index, high transparency nanocomposites for a variety of optical applications including OLED lighting and display applications
Abstract:
Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1 -10 nm) particle size with minimal aggregation and can be synthesized with high yield. The capping agents on the as-synthesized nanocrystals as well as nanocrystals which have undergone cap exchange reactions result in the formation of stable suspensions in polar and nonpolar solvents which may then result in the formation of high quality nanocomposite films.
Abstract:
Semiconductor nano-particles, due to their specific physical properties, can be used as optical modulator and reversible photo-bleachable materials for a wide spectrum, from far infrared to deep U.V. In this patent, nano-particles are provided with control circuitry to form a programmable mask. The optical characteristics of the nano-particles change to provide patterned light. Such patterned light can be used for example to expose a photoresist on a semiconductor wafer for photolithography. Other applications include, reversible contrast enhancement layer (R-CEL) in optical lithography, lithography mask inspection and writing and optical storage technologies.
Abstract:
The present disclosure provides a high refractive index acrylic formulation embedded with sub-10 nm metal oxide nanocrystals. The formulation is ideal for high refractive index, high transparency coating for a variety of optical applications including OLED lighting.
Abstract:
The present disclosure provides nanocrystal(s) containing silicone capping agent(s). Dispersions containing the nanocrystal(s) and at least one of silicone monomer(s), silicone pre-polymer(s), and silicone polymer(s), and optionally additionally containing a solvent are also described. Cured dispersions, compositions of nanocrystal(s) and LEDs and related structures containing the composition(s) are provided in the present disclosure.
Abstract:
Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1 -10 nm) particle size with minimal aggregation and can be synthesized with high yield. The capping agents on the as-synthesized nanocrystals as well as nanocrystals which have undergone cap exchange reactions result in the formation of stable suspensions in polar and nonpolar solvents which may then result in the formation of high quality nanocomposite films.
Abstract:
Semiconductor nano-sized particles possess unique optical properties, which make them ideal candidates for various applications in the UV photolithography. In this patent several such applications, including using semiconductor nano-sized particles or semiconductor nano-sized particle containing mateirals as highly refractive medium in immersion lithography, as anti-reflection coating in optics, as pellicle in lithography and as sensitizer in UV photoresists are described.
Abstract:
Method for exposing photo resists using programmable masks (74) increases imaging resolution to provide fully dense integrated circuit patterns made of very small features on photoresist-coated silicon wafers by optical lithography. Small features are created by means of overlap exposure (52) with either programmable or conventional masks. Blocking photoresists responding differently to two different wavelengths or light (80, 82), two-color photoresists requiring two wavelengths of light to change solubility, and two-photon photoresists which change solubility only by absorbing two photons at a time may be used.