METHOD AND APPARATUS FOR EXPOSING PHOTORESISTS USING PROGRAMMABLE MASKS

    公开(公告)号:AU2002366162A1

    公开(公告)日:2003-06-10

    申请号:AU2002366162

    申请日:2002-11-18

    Abstract: Method and apparatus for exposing photo resists using programmable masks increases imaging resolution to provide fully dense integrated circuit patterns made of very small features on photoresist-coated silicon wafers by optical lithography. Small features are created by means of overlap exposure with either programmable or conventional masks. Blocking photoresists responding differently to two different wavelengths of light, two-color photoresists requiring two wavelengths of light to change solubility, and two-photon photoresists which change solubility only by absorbing two photons at a time may be used.

    HIGH REFRACTIVE INDEX SILICONE NANOCOMPOSITES
    7.
    发明申请
    HIGH REFRACTIVE INDEX SILICONE NANOCOMPOSITES 审中-公开
    高折射率硅胶纳米复合材料

    公开(公告)号:WO2015069384A2

    公开(公告)日:2015-05-14

    申请号:PCT/US2014057035

    申请日:2014-09-23

    Abstract: The present disclosure provides nanocrystal(s) containing silicone capping agent(s). Dispersions containing the nanocrystal(s) and at least one of silicone monomer(s), silicone pre-polymer(s), and silicone polymer(s), and optionally additionally containing a solvent are also described. Cured dispersions, compositions of nanocrystal(s) and LEDs and related structures containing the composition(s) are provided in the present disclosure.

    Abstract translation: 本公开提供了含有硅酮封端剂的纳米晶体。 还描述了含有纳米晶体和硅氧烷单体,硅氧烷预聚物和有机硅聚合物中的至少一种的分散体,以及任选另外含有溶剂。 在本公开内容中提供了固化分散体,纳米晶体组合物和LED以及含有组合物的相关结构。

    METHOD AND APPARATUS FOR EXPOSING PHOTORESISTS USING PROGRAMMABLE MASKS
    10.
    发明申请
    METHOD AND APPARATUS FOR EXPOSING PHOTORESISTS USING PROGRAMMABLE MASKS 审中-公开
    使用可编程面膜曝光光电的方法和装置

    公开(公告)号:WO2003044597A1

    公开(公告)日:2003-05-30

    申请号:PCT/US2002/036942

    申请日:2002-11-18

    CPC classification number: G03F7/70466 G03F7/70291

    Abstract: Method for exposing photo resists using programmable masks (74) increases imaging resolution to provide fully dense integrated circuit patterns made of very small features on photoresist-coated silicon wafers by optical lithography. Small features are created by means of overlap exposure (52) with either programmable or conventional masks. Blocking photoresists responding differently to two different wavelengths or light (80, 82), two-color photoresists requiring two wavelengths of light to change solubility, and two-photon photoresists which change solubility only by absorbing two photons at a time may be used.

    Abstract translation: 使用可编程掩模(74)曝光光刻胶的方法提高了成像分辨率,以通过光学平版印刷技术在光致抗蚀剂涂覆的硅晶片上提供由非常小的特征制成的全密集的集成电路图案。 通过与可编程或常规掩模的重叠曝光(52)创建小特征。 可以使用不同于两种不同波长或光(80,82)的阻挡光刻胶,需要两个波长的光来改变溶解度的双色光致抗蚀剂,并且可以一次仅通过吸收两个光子来改变溶解度的双光子光致抗蚀剂。

Patent Agency Ranking