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    Method and apparatus for the chemical vapour deposition of III-V semiconductors utilizing organometallic and elemental pnictide sources
    61.
    发明公开
    Method and apparatus for the chemical vapour deposition of III-V semiconductors utilizing organometallic and elemental pnictide sources 失效
    使用有机元素和元素PNICTIDE来源的III-V族半导体化学气相沉积的方法和装置

    公开(公告)号：EP0212910A3

    公开(公告)日：1988-11-30

    申请号：EP86306055

    申请日：1986-08-06

    Applicant: STAUFFER CHEMICAL COMPANY

    Inventor： Kuck, Mark A. ,  Baumann, John A. ,  Gersten, Susan W.

    IPC: C23C16/30 ,  H01L21/205

    CPC classification number: C30B25/02 ,  C23C16/301 ,  C30B29/40

    Abstract: A method of chemical vapour deposition characterised in that it comprises:
    (A) producing a first gas stream comprising a Group III organometallic gas and a carrier gas; (B) producing a second gas stream comprising an elemental Group V metal gas from an elemental source and a carrier gas; and (C) supplying said gas streams to a reactor where they react to form a III-V semiconductor; and, optionally (D) supplying hydrogen gas to said reactor is disclosed. A chemical vapour deposition apparatus characterised in that it comprises:
    (A) first means (8) for producing a first gas stream comprising a Group III organometallic gas and a carrier gas; (B) second means (6) for producing a second gas stream comprising an elemental Group V metal gas from an elemental source and a carrier gas; and (C) a reactor (4) to which said gas streams are supplied where they react to form a III-V semiconductor; and, optionally, (D) third means for supplying hydrogen gas to said reactor is also disclosed. The present invention provides advantages over the prior art. The arsine, phosphine and trimethyl triethyl, or trialkyl arsine or trialkyl phosphine adducts of triethyl or trimethyl indium sources of the prior art are replaced by one or more pnictide (Group V) bubblers; that is, heated sources of elemental pnic- tides through which a carrier gas is allowed to flow. The elemental pnictide gas and the carrier gas are supplied in a stream as are a Group III organometallic gas, a carrier gas, and hydrogen to a chemical vapour deposition reactor where they react to form III-V semiconductors surface layers on a substrate. The carrier gas may be nitrogen, or a noble gas, such as argon. Alternatively, hydrogen may be used as the carrier gas so that the reaction is carried out in an exclusive hydrogen atmosphere. At least some of this hydrogen may be monoatomic hydrogen. The substrate may be a III-C semiconductor or glass. Products include layers of gallium arsenide, indium phosphide and alloys thereof, including gallium indium arsenide and gallium aluminium arsenide. Other ternary and quaternary III-V semiconductors are produced using appropriate combinations of sources of Group III organometallic gases and Group V elemental gases produced by bubblers. The products may be used in semiconductor devices including solar cells.

    Abstract translation: 一种化学气相沉积的方法，其特征在于其包括：（A）产生包含III族有机金属气体和载气的第一气流; （B）从元素源和载气产生包含元素V族金属气体的第二气流; 和（C）将所述气流供应到反应器，在反应器中反应以形成III-V半导体; 并且公开了任选地（D）向所述反应器供应氢气。 一种化学气相沉积设备，其特征在于其包括：（A）用于产生包含III族有机金属气体和载气的第一气流的第一装置（8） （B）用于从元素源和载气产生包含元素V族金属气体的第二气流的第二装置（6） 和（C）反应器（4），其中所述气流被供应到所述反应器，在那里它们反应以形成III-V半导体; 和任选的D）还公开了向所述反应器供应氢气的第三装置。 本发明提供了优于现有技术的优点。 现有技术的三乙基或三甲基铟源的胂，膦和三甲基三乙基或三烷基胂或三烷基膦加合物被一个或多个氙（V族）起泡器代替; 也就是说，允许载气流过的元素的加热源。 将元素气体和载气以与III族有机金属气体，载体气体和氢气一样的流体供应到化学气相沉积反应器，在其中反应以在衬底上形成III-V半导体表面层。 载气可以是氮气，也可以是惰性气体，例如氩气。 或者，可以使用氢作为载气，使得反应在专用氢气氛中进行。 该氢中的至少一些可以是单原子氢。 衬底可以是III-C半导体或玻璃。 产品包括砷化镓，磷化铟及其合金层，包括砷化铟镓和砷化镓砷化镓。 使用合适的III族有机金属气体源和由起泡器产生的V族元素气体的组合产生其它三元和四元III-V半导体。 该产品可用于包括太阳能电池的半导体器件。

    Flame retardant for polyurethane compositions
    62.
    发明公开
    Flame retardant for polyurethane compositions 失效
    聚氨酯组合物阻燃剂

    公开(公告)号：EP0255381A3

    公开(公告)日：1988-11-23

    申请号：EP87306747

    申请日：1987-07-30

    Applicant: STAUFFER CHEMICAL COMPANY

    Inventor： Konkus, David Michael ,  Kraft, Paul

    IPC: C08K05/00 ,  C08K05/49 ,  C08K03/22 ,  C08G18/00

    CPC classification number: C08K5/00 ,  C08G18/3889 ,  C08G2101/00 ,  C08K3/22 ,  C08K5/5353 ,  C08L75/04

    Abstract: A four-component flame retardant combination is disclosed: (a) a dialkylalkanolaminoalkylphosphonate; (b) a poly(organophosphate/phosphonate; (c) a polyhalogenated aromatic flame retardant; and (d) alumina trihydrate. It can be used in hydroxy/epoxy-containing prepolymer compositions which are adapted to be reacted with polyisocyanate to form poly(oxazolidone/urethane) materials.

    Abstract translation: 公开了一种四组分阻燃剂组合：（a）二烷基链烷醇胺基烷基膦酸酯; （b）聚（有机磷酸酯/膦酸酯;（c）多卤代芳族阻燃剂;和（d）三水合氧化铝，其可用于含羟基/环氧基的预聚物组合物，其适于与多异氰酸酯反应形成聚（ 恶唑烷酮/氨基甲酸酯）材料。

    Preparation of insoluble metal alkoxides
    65.
    发明公开
    Preparation of insoluble metal alkoxides 失效
    Herstellungunlöslicher金属醇盐。

    公开(公告)号：EP0282612A1

    公开(公告)日：1988-09-21

    申请号：EP87103823.8

    申请日：1987-03-17

    Applicant: STAUFFER CHEMICAL COMPANY

    Inventor： Ayen, Richard J. ,  Burk, Johst H. ,  Greco, Carl C.

    IPC: C07F7/00

    CPC classification number: C07F7/006 ,  C07C29/70 ,  C07C31/28 ,  C07C31/30

    Abstract: A number of processes for the formation of insoluble metal alkoxides are disclosed. In one embodiment, there is disclosed a two step process wherein a halide of an at least divalent metal is reacted with an appropriate alcohol in the first step. In the second step, the intermediate compound formed is then reacted with more alcohol, said alcohol forming part of a solvent system in which the final metal alkoxide formed is insoluble. In another embodiment, a two step process is disclosed wherein the intermediate formed in the first step is isolated, and then in the second step the intermediate is reacted with an appropriate alcohol to yield the final product. The final embodiment of the present invention comprises a one step process for the production of insoluble metal alkoxides wherein a halide of an at least divalent metal is reacted with an appropriate alcohol in the presence of an excess amount of a hydrogen halide acceptor in a solvent in which the hydrogen halide compound formed is soluble.

    Abstract translation: 公开了许多用于形成不溶性金属醇盐的方法。 在一个实施方案中，公开了两步法，其中至少二价金属的卤化物在第一步中与适当的醇反应。 在第二步中，所形成的中间体化合物然后与更多的醇反应，所述醇形成其中形成的最终金属醇盐不溶的溶剂体系的一部分。 在另一个实施方案中，公开了两步法，其中分离在第一步中形成的中间体，然后在第二步中，使中间体与适当的醇反应，得到最终产物。 本发明的最终实施方案包括用于生产不溶性金属醇盐的一步法，其中至少二价金属的卤化物在合适的醇中在过量的卤化氢受体存在下在溶剂中反应 所形成的卤化氢化合物是可溶的。

    Single phase carbonylation of aromatic halides to carboxylic acid salts
    68.
    发明公开
    Single phase carbonylation of aromatic halides to carboxylic acid salts 失效
    Einphasencarbonylierung von aromatischen Halogeniden zuCarbonsäuresalzen。

    公开(公告)号：EP0273553A1

    公开(公告)日：1988-07-06

    申请号：EP87309661.4

    申请日：1987-11-02

    Applicant: STAUFFER CHEMICAL COMPANY

    Inventor： Epstein, Ronald Alan

    IPC: C07C57/32 ,  C07C51/10

    CPC classification number: C07C51/10 ,  C07C57/32

    Abstract: A process for preparing carboxylic acid salts by the reaction of carbon monoxide with substituted or unsubstituted aromatic halides or an aliphatic organic halide comprises the catalyst single phase carbonylation of the halide utilizing in addition to carbon monoxide, a palladium catalyst, an excess of tertiary phosphine, optionally an amine compound, with an alkali metal or alkaline earth metal base added during the reaction to form the salt.

    Abstract translation: 通过一氧化碳与取代或未取代的芳族卤化物或脂族有机卤化物的反应制备羧酸盐的方法包括除了一氧化碳，钯催化剂，过量的叔膦以外的催化剂单相羰基化， 任选的胺化合物，在反应期间加入碱金属或碱土金属碱形成盐。

    Herbicide compositions of extended soil life
    70.
    发明公开
    Herbicide compositions of extended soil life 失效
    延长土壤生物的除草剂组合物

    公开(公告)号：EP0175332A3

    公开(公告)日：1988-03-16

    申请号：EP85111703

    申请日：1985-09-16

    Applicant: STAUFFER CHEMICAL COMPANY

    Inventor： Pallos, Ferenc Marcus ,  Gray, Reed Alden

    IPC: A01N25/22 ,  A01N47/12 ,  A01N47/16 ,  A01N47/18 ,  A01N47/22

    CPC classification number: A01N47/12 ,  A01N25/22 ,  A01N47/16 ,  A01N47/18 ,  A01N47/22 ,  A01N2300/00

    Abstract: @ Herbicidally active thiolcarbamates are employed in combination with a certain thiolcarbamate, thionocarbamate, thiolcarbamate sulfone, thiolcarbamate sulfoxide, dithiocarbamate or carbamate extender compound, the latter in sufficient quantity to minimize soil degradation and to prolong the soil life of the former. As a result, the herbicidal effectiveness of the thiolcarbamate herbicide is significantly enhanced and prolonged, rendering a single application or multiple applications of the herbicide effective over a longer period of time. Such herbicidal compositions can optionally contain a non-phytotoxic antidotally effective amount of thiolcarbamate herbicide antidote.

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