公开(公告)号：WO2005104207A1

公开(公告)日：2005-11-03

申请号：PCT/US2005/002509

申请日：2005-01-26

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  JOE, Raymond ,  GUMPHER, John ,  DIP, Anthony

Inventor： JOE, Raymond ,  GUMPHER, John ,  DIP, Anthony

IPC: H01L21/318

CPC classification number: C23C16/4404 ,  H01L21/3185

Abstract: A method for extending time between chamber cleaning processes in a process chamber (10, 102) of a processing system (1, 100). A particle-reducing film (502, 602, 608, 706) is formed on a chamber component (300, 500, 600, 700) in the process chamber (10, 102) to reduce particle formation in the process chamber (10, 102) during substrate processing, at least one substrate (40, 110) is introduced into the process chamber (10, 102) , a manufacturing process is performed in the process chamber (10, 102), and the at least one substrate (40, 110) is removed from the process chamber (10, 102). The particle-reducing film (502, 602, 608) may be deposited on a clean chamber component (300, 500, 600) or on a material deposit (302, 604) formed on a chamber component (300, 500, 600, 700). Alternatively, the particle-reducing film (706) may be formed by chemically modifying at least a portion of a material deposit (702) on a chamber component (700). The particle-reducing film (502, 602, 608, 706) may be formed after each manufacturing process or at selected intervals after multiple manufacturing processes.

Abstract translation: 一种在处理系统（1,100）的处理室（10,102）中延长室清洁过程之间的时间的方法。 在处理室（10,102）中的室部件（300,500,600,700）上形成颗粒减少膜（502,602,608,706），以减少处理室（10,102）中的颗粒形成 ），在处理室（10,102）中引入至少一个衬底（40,110），在所述处理室（10,102）中执行制造工艺，并且所述至少一个衬底（40,101） 110）从处理室（10,102）中取出。 颗粒减少膜（502,602,608）可以沉积在清洁室部件（300,500,600）上或沉积在形成在腔室部件（300,500,600,700）上的材料沉积物（302,604）上 ）。 或者，可以通过化学修饰室部件（700）上的材料沉积物（702）的至少一部分来形成颗粒还原膜（706）。 颗粒减少膜（502,602,608,706）可以在每个制造过程之后形成，或者在多个制造过程之后以选定的间隔形成。

公开(公告)号：WO2005076075A2

公开(公告)日：2005-08-18

申请号：PCT/US2005/002064

申请日：2005-01-19

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  KAUSHAL, Sanjeev ,  PANDEY, Pradeep ,  SUGASHIMA, Kenji

Inventor： KAUSHAL, Sanjeev ,  PANDEY, Pradeep ,  SUGASHIMA, Kenji

IPC: G03F

CPC classification number: G03F1/68 ,  G03F1/78 ,  H01L21/67248

Abstract: An adaptive real time thermal processing system is presented that includes a multivariable controller (260). Generally, the method (1600) includes creating a dynamic model of the thermal processing system (1630); incorporating reticle/mask curvature in the dynamic model; coupling a diffusion-amplification model into the dynamic thermal model; creating a multivariable controller; parameterizing the nominal setpoints into a vector of intelligent setpoints (1650); creating a process sensitivity matrix; creating intelligent setpoints using an efficient optimization method and process data; and establishing recipes that select appropriate models and setpoints during run-time.

Abstract translation: 提出了一种包括多变量控制器（260）的自适应实时热处理系统。 通常，方法（1600）包括创建热处理系统（1630）的动态模型; 在动态模型中结合掩模/掩模曲率; 将扩散扩增模型耦合到动态热模型中; 创建一个多变量控制器; 将标称设定值参数化为智能设定值的向量（1650）; 创建一个过程敏感性矩阵; 使用有效的优化方法和过程数据创建智能设定点; 并建立在运行期间选择合适的模型和设定值的配方。

公开(公告)号：WO2005074000A2

公开(公告)日：2005-08-11

申请号：PCT/US2005001325

申请日：2005-01-18

Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  BRCKA JOZEF

Inventor： BRCKA JOZEF

IPC: H01J37/32 ,  H01J37/00

CPC classification number: H01J37/321

Abstract: An inductively coupled plasma source is provided with a compact inductive element (20) that is configured to produce a spatially distributed plasma (15) particularly suitable for processing large scale wafers (14). The element (20) in its preferred embodiment is formed of a sheet material for compactness and ease in configuring. The element (20) is located outside of a dielectric wall or window (16) of a processing chamber (12), generally congruent to the dielectric wall or window, formed of one or more layers or loops (40). The conductor provides a conductive path around each loop that has a serpentine or oscillating configuration that renders the path around each loop greater than the circumference of the element (20). The path is so shaped by cutouts (30) along the side edges of the element. The conductor is formed of alternating sections (31-35) of large and small aspect ratio, defined as the width across the path to the thickness of the sheet. The sections are also defined by cutouts in the sheet. Narrower sections concentrate currents have higher inductances, and couple greater amounts of energy into the chamber, thereby producing rings of discrete plasma concentrations. One or more rings can be produced by configuring one or more loops of the inductive element so the higher inductance, lower aspect ration sections lie at appropriate radii from the axis of the chamber.

Abstract translation: 电感耦合等离子体源设置有紧凑的感应元件（20），其被配置为产生特别适合于处理大规模晶片（14）的空间分布等离子体（15）。 在其优选实施例中的元件（20）由用于紧凑且容易配置的片材形成。 元件（20）位于处理室（12）的介电壁或窗（16）的外侧，通常与由一个或多个层或环（40）形成的电介质壁或窗口一致。 导体提供围绕每个环的导电路径，其具有蛇形或摆动构造，使得围绕每个环的路径大于元件（20）的周长。 路径通过沿元件的侧边缘的切口（30）形成。 导体由具有大的和较小的纵横比的交替的部分（31-35）形成，定义为穿过该片材厚度的路径的宽度。 这些部分也由工作表中的切口定义。 较窄的部分集中电流具有较高的电感，并将更大量的能量耦合到腔室中，从而产生离散血浆浓度的环。 可以通过配置感应元件的一个或多个环来产生一个或多个环，使得较高的电感，较低的侧面比例部分位于从腔的轴线的适当半径处。

公开(公告)号：WO2012112334A3

公开(公告)日：2012-12-20

申请号：PCT/US2012024045

申请日：2012-02-07

Applicant: TOKYO ELECTRON AMERICA INC ,  TOKYO ELECTRON LTD ,  LEE ERIC M ,  FAGUET JACQUES

Inventor： LEE ERIC M ,  FAGUET JACQUES

IPC: C23C16/02 ,  B05D3/00 ,  C23C16/44 ,  C23C16/452 ,  C23C16/46 ,  C23C16/56

CPC classification number: C23C16/44 ,  C23C16/452 ,  C23C16/46 ,  C23C16/56

Abstract: A method of performing a filament-assisted chemical vapor deposition process is described. The method includes providing a substrate holder (220, 320, 420, 1020) in a process chamber (410) of a chemical vapor deposition system (400, 600, 1001, 2001), providing a non-ionizing heat source separate from the substrate holder (220, 320, 420, 1020) in the process chamber (410), disposing a substrate (225, 425, 1025) on the substrate holder (220, 320, 420, 1020), introducing a film forming composition (532) to the process chamber (410), thermally fragmenting the film forming composition (532) using the non-ionizing heat source, and forming a thin film on the substrate (225, 425, 1025) in the process chamber (410). The non-ionizing heat source includes a gas heating device (250, 445, 550, 645, 750, 800, 900, 1045, 2045) through and/or over which the film forming composition (532) flows. The method further includes remotely producing a reactive composition, and introducing the reactive composition to the process chamber (410) to interact with the substrate (225, 425, 1025), wherein the reactive composition is introduced sequentially and/or simultaneously with the introducing the film forming composition (532).

Abstract translation: 描述了执行长丝辅助化学气相沉积工艺的方法。 该方法包括在化学气相沉积系统（400,600,1001,2001）的处理室（410）中提供衬底保持器（220,320,420,1020），提供与衬底分离的非电离热源 （220,320,420,1020），将衬底（225,425,1025）设置在衬底保持器（220,320,420,1020）上，将成膜组合物（532）引入衬底保持器（220,320,420,1020） 到处理室（410），使用非电离热源对成膜组合物（532）进行热分解，以及在处理室（410）中的衬底（225,425,1025）上形成薄膜。 非电离热源包括通过和/或成膜组合物（532）流经的气体加热装置（250,445,550,645,750,800,900,1045,2045）。 该方法还包括远程生产反应性组合物，并且将反应性组合物引入到处理室（410）以与衬底（225,425,1025）相互作用，其中反应性组合物顺序地和/或同时引入 成膜组合物（532）。

公开(公告)号：WO2012129209A3

公开(公告)日：2012-11-15

申请号：PCT/US2012029767

申请日：2012-03-20

Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  LUONG VINH HOANG ,  KO AKITERU

Inventor： LUONG VINH HOANG ,  KO AKITERU

IPC: H01L21/66 ,  H01L21/033

CPC classification number: H01L21/31144 ,  H01L21/0337 ,  H01L21/31122 ,  H01L21/31138 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: A method of patterning a multi-layer mask (150, 150', 220) is described. The method includes preparing a multi-layer mask (150, 150', 220) on a substrate (1 10, 1 10', 200), wherein the multi-layer mask (150, 150', 220) includes a lithographic layer (226) and an intermediate mask layer (222) underlying the lithographic layer (226), and wherein the intermediate mask layer (222) comprises a carbon-containing compound. The method further includes: establishing an etch process recipe for transferring a pattern (230), that is formed in the lithographic layer (226) and characterized by an initial pattern critical dimension (CD) (152, 152', 232, 232'), to the intermediate mask layer (222); establishing at least one parametric relationship between an intermediate pattern CD (154, 154', 252, 252', 262, 262', 272, 272') to be formed in the intermediate mask layer (222) and at least one process parameter, wherein the at least one parametric relationship provides process conditions capable of increasing and decreasing the initial pattern CD (152, 152', 232, 232') to the intermediate pattern CD (154, 154', 252, 252', 262, 262', 272, 272'); selecting a target process condition to achieve a target CD adjustment between the initial pattern CD (152, 152', 232, 232') and the intermediate pattern CD (154, 154', 252, 252', 262, 262', 272, 272'); and transferring the pattern from the lithographic layer (226) to the intermediate mask layer (222) using the target process condition.

Abstract translation: 描述了图案化多层掩模（150,150'，220）的方法。 该方法包括在衬底（110,110'，200）上制备多层掩模（150,150'，220），其中多层掩模（150,150'，220）包括光刻层 226）和位于光刻层（226）下面的中间掩模层（222），并且其中中间掩模层（222）包括含碳化合物。 该方法还包括：建立用于传送形式在光刻层（226）中并且由初始图案临界尺寸（CD）（152,152'，232,232'）表征的图案（230）的蚀刻工艺配方， 到所述中间掩模层（222）; 建立要形成在中间掩模层（222）中的中间图案CD（154,154'，252,252'，262,262'，272,272'）之间的至少一个参数关系和至少一个工艺参数， 其中所述至少一个参数关系提供能够增加和减小所述初始图案CD（152,152'，232,232'）到所述中间图案CD（154,154'，252,252'，262,262'）的工艺条件， ，272,272'）; 选择目标处理条件以实现初始图案CD（152,152'，232,232'）与中间图案CD（154,154'，252,252'，262,262'，272“之间的目标CD调整） 272' ）; 以及使用目标工艺条件将图案从光刻层（226）转移到中间掩模层（222）。

公开(公告)号：WO2012112334A2

公开(公告)日：2012-08-23

申请号：PCT/US2012/024045

申请日：2012-02-07

Applicant: TOKYO ELECTRON AMERICA, INC. ,  TOKYO ELECTRON LIMITED ,  LEE, Eric, M. ,  FAGUET, Jacques

Inventor： LEE, Eric, M. ,  FAGUET, Jacques

IPC: C23C16/02 ,  C23C16/44 ,  C23C16/452 ,  C23C16/46 ,  C23C16/56 ,  B05D3/00

CPC classification number: C23C16/44 ,  C23C16/452 ,  C23C16/46 ,  C23C16/56

Abstract: A method of performing a filament-assisted chemical vapor deposition process is described. The method includes providing a substrate holder (220, 320, 420, 1020) in a process chamber (410) of a chemical vapor deposition system (400, 600, 1001, 2001), providing a non-ionizing heat source separate from the substrate holder (220, 320, 420, 1020) in the process chamber (410), disposing a substrate (225, 425, 1025) on the substrate holder (220, 320, 420, 1020), introducing a film forming composition (532) to the process chamber (410), thermally fragmenting the film forming composition (532) using the non-ionizing heat source, and forming a thin film on the substrate (225, 425, 1025) in the process chamber (410). The non-ionizing heat source includes a gas heating device (250, 445, 550, 645, 750, 800, 900, 1045, 2045) through and/or over which the film forming composition (532) flows. The method further includes remotely producing a reactive composition, and introducing the reactive composition to the process chamber (410) to interact with the substrate (225, 425, 1025), wherein the reactive composition is introduced sequentially and/or simultaneously with the introducing the film forming composition (532).

Abstract translation: 描述了进行长丝辅助化学气相沉积工艺的方法。 该方法包括在化学气相沉积系统（400,600,1001,2001）的处理室（410）中提供衬底保持器（220,320,420,1020），提供与衬底分离的非电离热源 在所述处理室（410）中的保持器（220,320,420,1020），将衬底（225,425,1025）设置在所述衬底保持器（220,320,420,1020）上，引入成膜组合物（532） 到处理室（410）中，使用非电离热源将成膜组合物热裂化（532），并在处理室（410）中的衬底（225,425,1025）上形成薄膜。 非电离热源包括通过成膜组合物（532）流过和/或在其上流动的气体加热装置（250,445,554,650,750,800,900,1045,2045）。 该方法还包括远程产生反应性组合物，并将反应性组合物引入处理室（410）以与基底（225,425,1025）相互作用，其中反应性组合物依次引入和/或同时引入 成膜组合物（532）。

公开(公告)号：WO2012071192A2

公开(公告)日：2012-05-31

申请号：PCT/US2011/060381

申请日：2011-11-11

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  DUNN, Shannon, W. ,  HETZER, Dave

Inventor： DUNN, Shannon, W. ,  HETZER, Dave

IPC: H01L21/033

CPC classification number: H01L21/0337 ,  G03F7/0035 ,  G03F7/40 ,  G03F7/405 ,  H01L21/0274 ,  Y10S438/947 ,  Y10S438/948 ,  Y10T428/24479 ,  Y10T428/24612

Abstract: A method for patterning a substrate (110, 310) is described. The patterning method may include performing a lithographic process to produce a pattern (122, 142, 321) and a critical dimension (CD) slimming process to reduce a CD (124, 144, 325) in the pattern (122, 142, 321) to a reduced CD (126, 146, 335). Thereafter, the pattern is doubled to produce a double pattern using a sidewall image transfer technique.

Abstract translation: 描述了用于图案化衬底（110,310）的方法。 图案化方法可以包括执行光刻处理以产生图案（122,142,321）和临时尺寸（CD）减肥过程以减少图案（122,142,321）中的CD（124,144,325） 到减少的CD（126,146,335）。 此后，使用侧壁图像转印技术将图案加倍以产生双重图案。

公开(公告)号：WO2012047459A3

公开(公告)日：2012-04-12

申请号：PCT/US2011/051379

申请日：2011-09-13

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  METZ, Andrew, W. ,  COTTLE, Hongyun

Inventor： METZ, Andrew, W. ,  COTTLE, Hongyun

IPC: H01L21/311

Abstract: A method for selectively etching a substrate (25, 140, 150, 300, 310, 510) is described. The method includes preparing a substrate (25, 140, 150, 300, 310, 510) comprising a silicon nitride layer (180, 320) overlying a silicon-containing contact region (172, 343), and patterning the silicon nitride layer (180, 320) to expose the silicon-containing contact region (172, 343) using a plasma etching process in a plasma etching system (1, 1 a, 1 b, 1 c, 1 c', 1 d, 1 e, 1f). The plasma etching process uses a process composition having as incipient ingredients a process gas containing C, H and F, and a non-oxygen-containing additive gas, wherein the non-oxygen- containing additive gas includes H, or C, or both H and C, and excludes a halogen atom.

公开(公告)号：WO2008100846A2

公开(公告)日：2008-08-21

申请号：PCT/US2008/053561

申请日：2008-02-11

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  DIP, Anthony

Inventor： DIP, Anthony

IPC: C23C16/455

CPC classification number: C23C16/45551 ,  C23C16/45508 ,  C23C16/45519 ,  C23C16/45536 ,  C23C16/4584 ,  C23C16/54 ,  H01L21/68764 ,  H01L21/68771

Abstract: Systems and methods for depositing thin films using Atomic Layer Deposition (ALD). The deposition system (10) includes a process chamber (16) with a peripheral sidewall (36), partitions (68, 70, 72, 74) that divide a processing space (38) inside the process chamber (16) into at least two compartments (76, 78), and a platter (50) that supports substrates (15) within the processing space (38). The platter (50) rotates the substrates (15) relative to the stationary peripheral sidewail (36) and compartments (76, 78). One compartment (76) receives a process material used to deposit a layer on each of the substrates (15) and the other compartment (78) contains an inert gas. A material injector (100, 100a, 100b), which injects the process materia!, communicates with the compartment (76) through the peripheral sidewall (36).

Abstract translation: 使用原子层沉积（ALD）沉积薄膜的系统和方法

沉积系统（10）包括具有周边侧壁（36）的处理室（16），将处理室（16）内部的处理空间（38）分隔成至少两个 隔室（76,78）以及支​​撑处理空间（38）内的基板（15）的浅盘（50）。 盘片50使基板15相对于静止的周边侧壁36和隔室76,78旋转。 一个隔室（76）接收用于在每个衬底（15）上沉积层的处理材料，而另一个隔室（78）包含惰性气体。 注入处理材料的材料注射器（100,100a，100b）通过周边侧壁（36）与隔室（76）连通。

公开(公告)号：WO2006088561A3

公开(公告)日：2008-06-05

申请号：PCT/US2005047409

申请日：2005-12-29

Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  KEVWITCH ROBERT ,  GOSHI GENTARO ,  HILLMAN JOSEPH T ,  LOWE MARIE ,  HANSEN BRANDON

Inventor： KEVWITCH ROBERT ,  GOSHI GENTARO ,  HILLMAN JOSEPH T ,  LOWE MARIE ,  HANSEN BRANDON

IPC: B08B7/00 ,  C11D11/00 ,  G03F7/42

CPC classification number: C11D3/3947 ,  B08B7/0021 ,  C11D11/0047 ,  C23G5/00 ,  G03F7/427 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/31133 ,  H01L21/67057 ,  H05K3/26

Abstract: A method and system (100, 200) is described for treating a substrate (105, 205) with a high pressure fluid, such as carbon dioxide in a supercritical state. A process chemistry is introduced to the high pressure fluid for treating the substrate surface. The process chemistry includes a peroxide-based chemistry.

Abstract translation: 描述了用高压流体（例如超临界状态的二氧化碳）处理衬底（105,205）的方法和系统（100,200）。 将工艺化学物质引入用于处理基材表面的高压流体中。 工艺化学包括基于过氧化物的化学。