公开(公告)号：KR1020100030995A

公开(公告)日：2010-03-19

申请号：KR1020080090007

申请日：2008-09-11

Applicant: 삼성전자주식회사

Inventor： 박경배 ,  류명관 ,  유병욱 ,  이상윤 ,  김태상 ,  권장연 ,  손경석 ,  정지심

IPC: G02F1/136 ,  H01L29/786

CPC classification number: H01L29/78609 ,  H01L29/78618 ,  H01L29/458

Abstract: PURPOSE: A method for manufacturing a thin film transistor by reducing off current of high drain area is provided. CONSTITUTION: A thin film transistor comprises a gate(11), gate insulation layer(12), channel(13), intermediate layer(14), source and drain(16a,16b). The gate is formed on one are of a substrate. The gate insulation layer is formed on the substrate and gate. The channel is formed on an area corresponding to the gate on the gate insulation layer. The intermediate layer is formed at both upper sides of the channel and on the gate insulation layer.

Abstract translation: 目的：提供一种通过减少高漏区电流来制造薄膜晶体管的方法。 构成：薄膜晶体管包括栅极（11），栅极绝缘层（12），沟道（13），中间层（14），源极和漏极（16a，16b）。 栅极形成在一个基板上。 栅极绝缘层形成在基板和栅极上。 沟道形成在与栅极绝缘层上的栅极对应的区域上。 中间层形成在通道的两个上侧和栅极绝缘层上。

公开(公告)号：KR1020090122727A

公开(公告)日：2009-12-01

申请号：KR1020080048676

申请日：2008-05-26

Applicant: 삼성전자주식회사

Inventor： 류명관 ,  박경배 ,  이상윤 ,  김태상 ,  권장연 ,  유병욱 ,  손경석 ,  정지심

IPC: H01L21/20

CPC classification number: C23C16/45565 ,  C23C16/45551 ,  C23C16/45574

Abstract: PURPOSE: An atomic layer deposition apparatus and an atomic layer deposition method using the same are provided to rapidly deposit a film of desired thickness on a substrate by injecting a first source gas, a first purge gas, a second source gas, and a second purge gas at the same time while the substrate or a shower head is moved. CONSTITUTION: A substrate supporting bar(120) is installed inside a reaction chamber, and supports a substrate(10). A shower head(130) includes a nozzle set capable of injecting a first source gas, a second source gas, and a purge gas on the substrate at the same time. At least one among the substrate supporting bar and the shower head is movably installed according to a first direction. A first source gas injection nozzle(31) is arranged in a first row. A purge gas injection nozzle(41,42) is arranged in a second row. A second source gas injection nozzle(32) is arranged in a third row.

Abstract translation: 目的：提供一种原子层沉积装置和使用其的原子层沉积方法，以通过注入第一源气体，第一吹扫气体，第二源气体和第二吹扫来快速沉积在衬底上的所需厚度的膜 同时在衬底或淋浴头移动的同时气体。 构成：衬底支撑杆（120）安装在反应室内，并支撑衬底（10）。 淋浴头（130）包括能够同时在基板上喷射第一源气体，第二源气体和吹扫气体的喷嘴组。 基板支撑杆和淋浴头中的至少一个根据第一方向可移动地安装。 第一源气体喷射喷嘴（31）布置在第一排中。 吹扫气体注入喷嘴（41,42）布置在第二排中。 第二源气体喷射喷嘴（32）布置在第三排中。

公开(公告)号：KR1020090121711A

公开(公告)日：2009-11-26

申请号：KR1020080047743

申请日：2008-05-22

Applicant: 삼성전자주식회사

Inventor： 권장연 ,  이상윤 ,  류명관 ,  김태상 ,  박경배 ,  유병욱 ,  손경석 ,  정지심

IPC: G02F1/1335 ,  G02F1/13

CPC classification number: G02F1/133305 ,  G09F9/35

Abstract: PURPOSE: A display device and a manufacturing method thereof for improving the real feeling and immersion are provided to improve the image quality by changing FOV within a predetermined range. CONSTITUTION: A display device includes a flexible base(10) and a hard base(30). An image display structure(20) is formed on a second surface of the flexible base. The hard base comprises a plurality of pieces. A plurality of pieces is closely fixed to the flexible base. The flexible base is bend in a direction of the image display structure. The image display structure is roundly changed. The reality is improved by increase of FOV(Field Of View) by bending of the display device.

Abstract translation: 目的：提供一种用于改善真实感和浸没的显示装置及其制造方法，以通过在预定范围内改变FOV来改善图像质量。 构成：显示装置包括柔性基座（10）和硬质基座（30）。 图像显示结构（20）形成在柔性基底的第二表面上。 硬底包括多个片。 多个件紧密地固定在柔性基座上。 柔性基座在图像显示结构的方向上弯曲。 图像显示结构被彻底改变。 通过显示装置的弯曲增加FOV（视场）来改善现实。

公开(公告)号：KR1020090084642A

公开(公告)日：2009-08-05

申请号：KR1020080099608

申请日：2008-10-10

Applicant: 삼성전자주식회사

Inventor： 손경석 ,  김태상 ,  권장연 ,  정지심 ,  이상윤 ,  류명관 ,  박경배 ,  유병욱

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/51 ,  H01L29/66969 ,  H01L29/78648

Abstract: An oxide semiconductor transistor and a manufacturing method thereof are provided to increase the driving current by forming gates at the upper and lower parts of channel layer. A channel layer(116) is made of an oxide semiconductor. The first gate insulating layer(110) is formed between the channel layer and the first gate(112). The second gate insulating layer(120) is formed between the channel layer and the second gate(122). The first gate insulating layer and the second gate insulating layer are made of the different material. The first gate insulating layer is made of the material not including the oxygen. The second gate insulating layer is made of the material including the oxygen.

Abstract translation: 提供一种氧化物半导体晶体管及其制造方法，通过在沟道层的上部和下部形成栅极来增加驱动电流。 沟道层（116）由氧化物半导体构成。 第一栅极绝缘层（110）形成在沟道层和第一栅极（112）之间。 第二栅极绝缘层（120）形成在沟道层和第二栅极（122）之间。 第一栅极绝缘层和第二栅极绝缘层由不同的材料制成。 第一栅绝缘层由不包括氧的材料制成。 第二栅绝缘层由包括氧的材料制成。

公开(公告)号：KR1020090057689A

公开(公告)日：2009-06-08

申请号：KR1020070124382

申请日：2007-12-03

Applicant: 삼성전자주식회사

Inventor： 손경석 ,  이상윤 ,  류명관 ,  김태상 ,  권장연 ,  박경배 ,  정지심

IPC: G02F1/136 ,  H01L29/786

CPC classification number: G02F1/136213 ,  G02F2203/01 ,  H01L29/7869

Abstract: A display device using an oxide semiconductor thin film transistor is provided to have at least one storage capacitor. A display device using an oxide semiconductor thin film transistor includes a storage electrode(120) and a pixel electrode(130). At least one thin film transistor and at least one storage capacitor are prepared. The storage capacitor of the storage electrode is made of transparent oxide semiconductors, and the pixel electrode is spaced from the storage electrode at a certain interval.

Abstract translation: 提供使用氧化物半导体薄膜晶体管的显示装置具有至少一个存储电容器。 使用氧化物半导体薄膜晶体管的显示装置包括存储电极（120）和像素电极（130）。 制备至少一个薄膜晶体管和至少一个存储电容器。 存储电极的存储电容器由透明氧化物半导体制成，并且像素电极以一定间隔与存储电极间隔开。

公开(公告)号：KR1020080112091A

公开(公告)日：2008-12-24

申请号：KR1020080019304

申请日：2008-02-29

Applicant: 삼성전자주식회사

Inventor： 류명관 ,  이상윤 ,  이제훈 ,  김태상 ,  권장연 ,  박경배 ,  손경석 ,  정지심

IPC: G02F1/136

CPC classification number: G02F1/136 ,  H01L21/67075 ,  H01L29/786 ,  H01L29/7869

Abstract: A method for fabricating ZnO family thin film transistor is provided to reduce the damage of plasma and implement a proper electrical characteristic using wet etching method. A gate(20) is formed on a substrate(10). A gate isolation layer(21) is formed on the gate. A ZnO series channel layer(22) is formed on the gate isolation layer. A conductive material for the electrode manufacture is formed. A mask layer has the pattern corresponding to source / drain electrodes(23a,23b) of the channel layer either side of the thin film transistor on the layer of conductive material. The source / drain electrode is formed by etching the domain which is not covered with the mask layer. A passivation layer(25) is formed to cover the source / drain electrode and channel layer.

Abstract translation: 提供一种制造ZnO族薄膜晶体管的方法，以减少等离子体的损伤，并使用湿式蚀刻方法实现适当的电气特性。 在基板（10）上形成栅极（20）。 栅极隔离层（21）形成在栅极上。 在栅极隔离层上形成ZnO系沟道层（22）。 形成用于电极制造的导电材料。 掩模层具有与导电材料层上的薄膜晶体管的任一侧的沟道层的源极/漏极（23a，23b）对应的图案。 源极/漏极通过蚀刻未被掩模层覆盖的畴来形成。 形成钝化层（25）以覆盖源/漏电极和沟道层。

公开(公告)号：KR1020080104588A

公开(公告)日：2008-12-03

申请号：KR1020070051560

申请日：2007-05-28

Applicant: 삼성전자주식회사

Inventor： 손경석 ,  이상윤 ,  류명관 ,  김태상 ,  권장연 ,  박경배 ,  정지심

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/78696

Abstract: The method of manufacturing the ZnO system thin film transistor is provided to obtain the GIZO thin film transistor by adjusting the proper carrier concentration. The manufacturing method of the ZnO system thin film transistor comprises as follows. A step is for forming the ZnO system channel layer in the substrate(10). The step is for forming the oxide layer including the oxygen of the imperfect combination state on the channel layer. A step is for doing with the annealing on the channel layer(22) and oxide layer. In the annealing step, the oxygen of the oxide layer is provided to the channel layer and the carrier concentration of the channel layer is reduced by the interfacial reaction between the oxide layer and the channel layer.

Abstract translation: 提供制造ZnO系薄膜晶体管的方法，通过调整适当的载流子浓度来获得GIZO薄膜晶体管。 ZnO系薄膜晶体管的制造方法如下。 步骤是在衬底（10）中形成ZnO系沟道层。 该步骤用于在通道层上形成包括不完美组合状态的氧的氧化物层。 步骤是在沟道层（22）和氧化物层上进行退火。 在退火步骤中，氧化物层的氧被提供给沟道层，沟道层的载流子浓度由于氧化物层和沟道层之间的界面反应而降低。

公开(公告)号：KR1020040031112A

公开(公告)日：2004-04-13

申请号：KR1020020060384

申请日：2002-10-04

Applicant: 삼성전자주식회사

Inventor： 손경석

IPC: F24F1/00

Abstract: PURPOSE: An air conditioner is provided to prevent the ununiformity in the gap between a rim of an opening/closing element and a suction hole when the suction hole is closed by the opening/closing element, wherein the movement of the opening/closing element becomes stable. CONSTITUTION: An air conditioner includes a main body provided with suction holes(11) at a side, and a rotation shaft(32) rotating by a driving motor(31) which generates rotation power. A plurality of guide elements(34U,34L) are disposed with a predetermined interval and receives the rotation power from the rotation shaft to move back and forth. An opening/closing element(20) is mounted at a side of the guide elements to move back and forth in association with the guide elements, thereby opening/closing the suction holes.

Abstract translation: 目的：提供一种空调，用于防止当打开/关闭元件关闭抽吸孔时打开/关闭元件的边缘与吸入孔之间的间隙不均匀，其中打开/关闭元件的移动变为 稳定。 构成：空调机包括在主体上设有吸入孔（11）的主体和由产生旋转动力的驱动马达（31）旋转的旋转轴（32）。 多个引导元件（34U，34L）以预定的间隔设置并且接收来自旋转轴的旋转动力来往复移动。 打开/关闭元件（20）安装在引导元件的一侧，与引导元件相关联地前后移动，从而打开/关闭抽吸孔。

公开(公告)号：KR1020030093396A

公开(公告)日：2003-12-11

申请号：KR1020020029787

申请日：2002-05-29

Applicant: 삼성전자주식회사

Inventor： 김남성 ,  손경석

IPC: F24F1/06

CPC classification number: F24F1/06 ,  F24F2003/1692

Abstract: PURPOSE: An air conditioner with an oxygen generator is provided to allow an oxygen supply tube to be simply and rapidly connected to an indoor unit, and to efficiently discharge supplied oxygen into a room by connecting the oxygen supply tube to an outlet guide of the indoor unit to supply oxygen generated in the oxygen generator installed in an outdoor unit to the indoor unit. CONSTITUTION: An oxygen supply tube(33) is placed on an outlet(23) placed on a main body(21) of an indoor unit(20) to discharge conditioned air into a room. An outlet guide(26) is installed to the outlet and has a plurality of blades to guide air discharged from the indoor unit into the room. Insertion holes(28) are formed on both of side plates of the outlet guide to allow the oxygen supply tube to penetrate the indoor unit so that the oxygen supply tube is inserted selectively to one of the insertion holes formed on both of the side plates. An end of the oxygen supply tube inserted to the insertion hole is formed with material with flexibility and elasticity to be forcibly inserted to the insertion hole.

Abstract translation: 目的：提供一种具有氧气发生器的空调器，以便将供氧管简单快速地连接到室内单元，并且通过将供氧管连接到室内的出口引导件将供氧的氧气有效地排放到房间中 单元，将安装在室外机中的氧气发生器中产生的氧气供给到室内机。 构成：将供氧管（33）放置在放置在室内机（20）的主体（21）上的出口（23）上，以将调节空气排入室内。 出口引导件（26）安装在出口上，并具有多个叶片以将从室内单元排出的空气引导到房间中。 插入孔（28）形成在出口引导件的两个侧板上，以允许供氧管穿透室内单元，使得供氧管被选择性地插入到形成在两个侧板上的一个插入孔中。 插入到插入孔中的供氧管的端部形成为具有柔性和弹性的材料，以强制地插入到插入孔中。

公开(公告)号：KR102230653B1

公开(公告)日：2021-03-23

申请号：KR1020130169391

申请日：2013-12-31

Applicant: 삼성전자주식회사 ,  서울대학교산학협력단

Inventor： 김현석 ,  한승우 ,  류명관 ,  박준석 ,  손경석

IPC: H01L29/786 ,  H01L29/36 ,  H01L21/336

Abstract: 박막트랜지스터및 그제조방법이개시된다. 개시된박막트랜지스터는채널층이게이트전극과상대적으로가까운제 1영역과상대적으로거리가먼 제 2영역을포함할수 있으며, 채널층을구성하는물질중 적어도하나는제 1영역보다제 2영역에서의농도가더 클수 있다. 채널층은아연(Zn) 및불소(F)를포함할수 있으며, 제 2영역에서의불소의농도가제 1영역에서의불소의농도보다클 수있다.