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公开(公告)号：KR1020030018385A
公开(公告)日：2003-03-06
申请号：KR1020010052091
申请日：2001-08-28
Applicant: 전자부품연구원
IPC: G02F1/1365
Abstract: PURPOSE: A method for fabricating an MIM(Metal Insulator Metal) device of a liquid crystal display is provided to form upper and lower electrodes of the same metal material to reduce stress applied to a ductile plastic substrate and prevent deformation of the plastic substrate and cracking of the lower electrode. CONSTITUTION: A lower electrode(102) is formed of a ductile metal on a transparent substrate(100). A photoresist pattern is selectively formed on the transparent substrate to expose the surface of the lower electrode, and an insulating layer(104) is formed on the lower electrode. The photoresist pattern is removed. A photoresist pattern is selectively formed on the transparent substrate having the insulating layer to expose the insulating layer and a predetermined portion of the substrate, and the same ductile metal as the lower electrode is deposited on the overall surface of the substrate. The photoresist pattern and the ductile metal layer formed on the photoresist pattern are lifted off, to form an upper electrode(106) on the insulating layer and the substrate.
Abstract translation: 目的：提供一种用于制造液晶显示器的MIM（金属绝缘体金属）器件的方法，以形成相同金属材料的上下电极，以减少施加在延性塑料基片上的应力，并防止塑料基片的变形和开裂 的下电极。 构成：下部电极（102）由透明衬底（100）上的延性金属形成。 在透明基板上选择性地形成光致抗蚀剂图形以暴露下电极的表面，并且在下电极上形成绝缘层（104）。 去除光致抗蚀剂图案。 在具有绝缘层的透明基板上选择性地形成光致抗蚀剂图案，以露出绝缘层和基板的预定部分，并且与基板的整个表面上沉积与下部电极相同的延性金属。 在光致抗蚀剂图案上形成的光致抗蚀剂图案和延展性金属层被剥离，以在绝缘层和基板上形成上电极（106）。
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公开(公告)号：KR1020140037702A
公开(公告)日：2014-03-27
申请号：KR1020120104186
申请日：2012-09-19
Applicant: 경희대학교 산학협력단 , 전자부품연구원
IPC: H01L29/786 , H01L31/09
CPC classification number: H01L31/0264 , H01L27/14616 , H01L29/78696 , H01L31/0324 , H01L45/141
Abstract: The present invention relates to a transparent electronic device having 2D transition metal dichalcogenides with multi-layers, an optoelectronic device, and a transistor device. Preferably, the present invention relates to form a channel layer between transparent layers by forming a multilayer which consisting of at least three layers of a single transition metal dichalcogenide. For this, a transparent electronic device using transition metal dichalcogenides with multi-layers includes electrodes made of a transparent conductive material, and a channel region which is formed between the electrodes by the transition metal dichalcogenides.
Abstract translation: 本发明涉及具有多层二维过渡金属二硫属元素的透明电子器件，光电器件和晶体管器件。 优选地，本发明涉及通过形成由至少三层单一过渡金属二硫属元素组成的多层，在透明层之间形成通道层。 为此，使用具有多层的过渡金属二硫属元素的透明电子器件包括由透明导电材料制成的电极和通过过渡金属二硫属元素形成在电极之间的沟道区域。
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公开(公告)号：KR101240292B1
公开(公告)日：2013-03-11
申请号：KR1020110146533
申请日：2011-12-29
Applicant: 전자부품연구원
Abstract: PURPOSE: A supporting structure for a flexible substrate and a flexible substrate supporting method are provided to easily attach and detach the flexible substrate by using a supporting unit which is divided into a plurality of parts. CONSTITUTION: A support layer(120) is formed on an elastic layer(110). The support layer is formed to be separated into multiple support units(121) as the elastic layer extends and shrinks. The support layer supports a flexible substrate(10). The elastic layer is formed to be extended and shrunk in a transverse direction. The multiple support units are formed to be separated in a transverse direction as the elastic layer extends and shrinks in a transverse direction.
Abstract translation: 目的：提供一种用于柔性基板的支撑结构和柔性基板支撑方法，通过使用被分成多个部分的支撑单元来容易地附接和分离柔性基板。 构成：在弹性层（110）上形成支撑层（120）。 当弹性层延伸和收缩时，支撑层形成为分离成多个支撑单元（121）。 支撑层支撑柔性基板（10）。 弹性层形成为沿横向延伸和收缩。 当弹性层沿横向延伸并收缩时，多个支撑单元形成为在横向上分离。
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公开(公告)号：KR1020120131674A
公开(公告)日：2012-12-05
申请号：KR1020110050014
申请日：2011-05-26
Applicant: 전자부품연구원
IPC: H01L31/115
CPC classification number: H01L31/115 , H01L27/14676 , H01L31/085
Abstract: PURPOSE: A thin film transistor array panel for an X-ray detector and a method for manufacturing a thin film transistor on a substrate are provided to simplify a process and stably drive a device by applying a device of a top gate structure to a TFT backplane panel. CONSTITUTION: A thin film transistor(120) has a top gate structure and is formed in each pixel region defined on a base substrate(110). The thin film transistor includes a source electrode(122B) and a drain electrode(122A) formed on the same layer as the source electrode. A photoelectric conversion device(140) is electrically connected to the thin film transistor. The photoelectric conversion device includes a pixel electrode(142), a photoconductor layer(144), and a bias electrode(146).
Abstract translation: 目的：提供一种用于X射线检测器的薄膜晶体管阵列面板和用于在衬底上制造薄膜晶体管的方法，以通过将顶栅结构的器件施加到TFT背板来简化工艺并稳定地驱动器件 面板。 构成：薄膜晶体管（120）具有顶栅结构并且形成在限定在基底（110）上的每个像素区域中。 该薄膜晶体管包括与源电极形成在同一层上的源电极（122B）和漏电极（122A）。 光电转换装置（140）与薄膜晶体管电连接。 光电转换装置包括像素电极（142），光电导体层（144）和偏置电极（146）。
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公开(公告)号：KR1020120084107A
公开(公告)日：2012-07-27
申请号：KR1020110005434
申请日：2011-01-19
Applicant: 전자부품연구원
IPC: H01L29/786 , H01L21/336 , G02F1/136
CPC classification number: H01L29/66742 , H01L29/45 , H01L29/7869
Abstract: PURPOSE: A method of manufacturing oxide semiconductor thin film transistor and semiconductor equipment are provided to reduce a contact resistance between source and drain semiconductor channel layers by using air pressure plasma processing. CONSTITUTION: A gate insulating film(114) where a channel layer(116) composed of an oxide semiconductor is formed is made on a substrate to cover a gate electrode. The surface of a generated channel layer is processed with use of air pressure plasma. A source and drain electrodes are respectively formed on both sides of the surface processed channel layer. A protective film(120) covering the generated source and drain electrodes and channel layer is formed.
Abstract translation: 目的：提供一种制造氧化物半导体薄膜晶体管和半导体设备的方法，以通过使用气压等离子体处理来降低源极和漏极半导体沟道层之间的接触电阻。 构成：在衬底上形成由氧化物半导体构成的沟道层（116）的栅极绝缘膜（114），以覆盖栅电极。 使用空气压力等离子体处理产生的通道层的表面。 源极和漏极分别形成在表面处理沟道层的两侧。 形成覆盖所产生的源极和漏极以及沟道层的保护膜（120）。
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Patent Agency Ranking
公开(公告)号：KR101114425B1
公开(公告)日：2012-03-05
申请号：KR1020090128729
申请日：2009-12-22
Applicant: 전자부품연구원 , 엘에스전선 주식회사
Abstract: 본발명은표면입자뭉침이제거된나노복합입자체및 그제조방법에 관한것으로, 보다상세하게는모입자인고분자입자와자입자인나노입자를포함하는건식복합체에있어서, 상기건식복합체를용액에분산시켜건식복합체의표면에뭉쳐있는나노입자를용해시켜제거하여나노복합입자체를제조하고, 상기나노복합입자체에나노입자를추가로투입하여두 번째건식복합체를제조한후, 다시상기두 번째건식복합체를용액에분산시켜두 번째건식복합체의표면에뭉쳐있는나노입자를용해시켜제거한고입자분율을가지는것을특징으로하는나노복합입자체에관한것이다.
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公开(公告)号：KR101093613B1
公开(公告)日：2011-12-15
申请号：KR1020090070327
申请日：2009-07-31
Applicant: 전자부품연구원
Abstract: 다양한 분야에 사용가능한 MgO 쉘 구조체를 제조할 수 있는 MgO 쉘 구조체 제조 방법이 제안된다. 제안된 MgO 쉘 구조체 제조 방법에서는 고분자 입자 및 나노미터 수준의 MgO 입자를 혼성화하고, 혼성화된 입자에 Mg(OH)
2 를 형성하기 위하여 수화시킨 후, 수화된 입자를 소성하여 MgO 쉘 구조체를 제조한다.
MgO 입자, 고분자, 쉘-
公开(公告)号：KR1020100075061A
公开(公告)日：2010-07-02
申请号：KR1020080133663
申请日：2008-12-24
Applicant: 전자부품연구원
IPC: H01L29/786 , H05B33/00 , B82Y30/00
CPC classification number: H01L51/105 , H01L51/0005 , H01L51/0545
Abstract: PURPOSE: An organic thin film transistor and a manufacturing method thereof are provided to form an organic semiconductor channel with high crystallization and high charge mobility by forming an organic semiconductor layer, with a requested shape and size, on a channel region. CONSTITUTION: A gate electrode is formed on a substrate. A gate insulating layer(130) is formed on the gate electrode. A source electrode, a drain electrode, and a data electrode are formed on the gate insulation layer. A self-assembly monolayer(160) is formed on the upper side of the source electrode and the drain electrode. The channel region is removed to expose a part of the source electrode and the drain electrode. An organic semiconductor layer(170) is formed on the channel region.
Abstract translation: 目的：提供一种有机薄膜晶体管及其制造方法，通过在沟道区上形成具有要求形状和尺寸的有机半导体层，形成具有高结晶性和高电荷迁移率的有机半导体沟道。 构成：在基板上形成栅电极。 在栅电极上形成栅极绝缘层（130）。 在栅极绝缘层上形成源电极，漏电极和数据电极。 在源电极和漏电极的上侧形成自组装单层（160）。 去除沟道区以露出源电极和漏电极的一部分。 在沟道区上形成有机半导体层（170）。
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公开(公告)号：KR100841244B1
公开(公告)日：2008-06-25
申请号：KR1020060117953
申请日：2006-11-27
Applicant: 전자부품연구원
IPC: H01L27/146 , H01L31/10
Abstract: 본 발명은 광 감지 센서 및 그의 제조 방법에 관한 것으로, 광을 감지할 수 있는 비정질 실리콘 박막 트랜지스터와; 상기 비정질 실리콘 박막 트랜지스터에서 발생된 전하를 저장할 수 있는 스토리지 캐패시터와; 상기 스토리지 캐패시터에 저장된 전하를 이동시키도록, 스위칭하는 다결정 실리콘 박막 트랜지스터로 구성된 광 감지 센서로 구성된다.
따라서, 본 발명은 높은 전하 이송 특성을 갖는 다결정 실리콘을 이용하여 스위치용 트랜지스터를 구성함으로써, 스위치용 트랜지스터의 크기를 줄일 수 있고 센서용 트랜지스터의 크기를 증가시킬 수 있어 센싱 특성을 향상시킬 수 있는 효과가 있다.
지문, 센서, 박막, 트랜지스터, 다결정, 비정질-
公开(公告)号：KR100809519B1
公开(公告)日：2008-03-04
申请号：KR1020050129724
申请日：2005-12-26
Applicant: 전자부품연구원
IPC: H01L29/786
Abstract: 본 발명은 다결정 실리콘 박막 트랜지스터의 제조 방법에 관한 것으로, 덮개층을 사용하여 방향성 거대 결정립을 형성함으로써, 전하 이동도를 증가시킬 수 있어, 소자의 동작 속도를 증가시킬 수 있는 효과가 있다.
결정립, 거대, 방향, 덮개, 에너지, 차단, 무반사
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