公开(公告)号：KR1019920009898B1

公开(公告)日：1992-11-05

申请号：KR1019890020674

申请日：1989-12-30

Applicant: 한국전자통신연구원

Inventor： 박기성 ,  오광룡 ,  이용탁

IPC: H01L21/82

CPC classification number: H01L27/1443

Abstract: A method for manufacturing the opto-electron integrated circuit integrating the photo-detector and the field effect transistor at one chip comprises: a first epitaxial process growing the channel layer and the photo-absorption layer on the InP substrate; a first etching process for removing the photo- absorption layer after making the etching mask; a second epitaxial process growing the clad layer after removing the photo-sensitive material for etching mask; a process annealing the p- type metal deposited by lift-off method for ohmic contact of the photo-detector and the FET; a second etching process removing the gate part of FET by using the P-type metal as the etching mask.

Abstract translation: 在一个芯片上集成光检测器和场效应晶体管的光电子集成电路的制造方法包括：在InP衬底上生长沟道层和光吸收层的第一外延工艺; 在制作蚀刻掩模之后去除光吸收层的第一蚀刻工艺; 在除去用于蚀刻掩模的光敏材料之后，使包覆层生长的第二外延工艺; 通过剥离法沉积的p-型金属对光检测器和FET的欧姆接触进行退火的工艺; 通过使用P型金属作为蚀刻掩模来去除FET的栅极部分的第二蚀刻工艺。