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公开(公告)号：US10983361B2
公开(公告)日：2021-04-20
申请号：US15898394
申请日：2018-02-16
Applicant: ASML Netherlands B.V.
Abstract: A method of aligning a diffractive optical system, to be operated with an operating beam, comprises: aligning (558) the diffractive optical system using an alignment beam having a different wavelength range from the operating beam and using a diffractive optical element optimized (552) to diffract the alignment beam and the operating beam in the same (or a predetermined) direction. In an example, the alignment beam comprises infra-red (IR) radiation and the operating beam comprises soft X-ray (SXR) radiation. The diffractive optical element is optimized by providing it with a first periodic structure with a first pitch (pIR) and a second periodic structure with a second pitch (pSXR). After alignment, the vacuum system is pumped down (562) and in operation the SXR operating beam is generated (564) by a high harmonic generation (HHG) optical source pumped by the IR alignment beam’ optical source.
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公开(公告)号：US10942460B2
公开(公告)日：2021-03-09
申请号：US16085000
申请日：2017-02-14
Applicant: ASML NETHERLANDS B.V.
Abstract: A method of determining positions of marks, the marks comprising periodic structures, at least some of the structures comprising periodic sub-structures, the sub-structures having a smaller period than the structures, the marks formed with positional offsets between the sub-structures and structures, the positional offsets caused by a combination of both known and unknown components, the method comprising illuminating a plurality of the marks with radiation having different characteristics, detecting radiation diffracted by the marks using one or more detectors which produce output signals, discriminating between constituent parts of the signals, the discriminating based on a variation of the signals as a function of spatial positions of the marks on a substrate, selecting at least one of the constituent parts of the signals, and using the at least one selected constituent part, and information relating to differences between the known components, to calculate a corrected position of at least one mark.
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公开(公告)号：US10761432B2
公开(公告)日：2020-09-01
申请号：US15961377
申请日：2018-04-24
Applicant: ASML Netherlands B.V.
Inventor： Simon Gijsbert Josephus Mathijssen , Stefan Hunsche , Markus Gerardus Martinus Maria Van Kraaij
Abstract: Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.
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公开(公告)号：US10585363B2
公开(公告)日：2020-03-10
申请号：US15575069
申请日：2016-03-14
Applicant: ASML Netherlands B.V.
Inventor： Simon Gijsbert Josephus Mathijssen , Arie Jeffrey Den Boef , Alessandro Polo , Patricius Aloysius Jacobus Tinnemans , Adrianus Johannes Hendrikus Schellekens , Elahe Yeganegi Dastgerdi , Willem Marie Julia Marcel Coene , Erik Willem Bogaart , Simon Reinald Huisman
Abstract: An alignment system, method and lithographic apparatus are provided for determining the position of an alignment mark, the alignment system comprising a first system configured to produce two overlapping images of the alignment mark that are rotated by around 180 degrees with respect to one another, and a second system configured to determine the position of the alignment mark from a spatial distribution of an intensity of the two overlapping images.
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公开(公告)号：US10386735B2
公开(公告)日：2019-08-20
申请号：US15754470
申请日：2016-08-22
Applicant: ASML Netherlands B.V.
Inventor： Simon Gijsbert Josephus Mathijssen , Arie Jeffrey Den Boef , Nitesh Pandey , Patricius Aloysius Jacobus Tinnemans , Stefan Michiel Witte , Kjeld Sijbrand Eduard Eikema
Abstract: A lithographic apparatus comprises comprise a substrate table constructed to hold a substrate; and a sensor configured to sense a position of an alignment mark provided onto the substrate held by the substrate table. The sensor comprises a source of radiation configured to illuminate the alignment mark with a radiation beam, a detector configured to detect the radiation beam, having interacted with the alignment mark, as an out of focus optical pattern, and a data processing system. The data processing system is configured to receive image data representing the out of focus optical pattern, and process the image data for determining alignment information, comprising applying a lensless imaging algorithm to the out of focus optical pattern.
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Patent Agency Ranking
66.发明授权公开(公告)号：US10379448B2
公开(公告)日：2019-08-13
申请号：US15875156
申请日：2018-01-19
Applicant: ASML Netherlands B.V.
Inventor： Simon Gijsbert Josephus Mathijssen , Sander Bas Roobol , Nan Lin , Willem Marie Julia Marcel Coene , Arie Jeffrey Den Boef
Abstract: Target structures such as overlay gratings (Ta and Tb) are formed on a substrate (W) by a lithographic process. The first target is illuminated with a spot of first radiation (456a, Sa) and simultaneously the second target is illuminated with a spot of second radiation (456b, Sb). A sensor (418) detects at different locations, portions (460x−, 460x+) of said first radiation that have been diffracted in a first direction by features of the first target and portions (460y−, 460y+) of said second radiation that have been diffracted in a second direction by features of the second target. Asymmetry in X and Y directions can be detected simultaneously, reducing the time required for overlay measurements in X and Y. The two spots of radiation at soft x-ray wavelength can be generated simply by exciting two locations (710a, 710b) in a higher harmonic generation (HHG) radiation source or inverse Compton scattering source.
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公开(公告)号：US20180348645A1
公开(公告)日：2018-12-06
申请号：US15988677
申请日：2018-05-24
Applicant: ASML Netherlands B.V.
Inventor： Janneke Ravensbergen , Nitesh Pandey , Zili Zhou , Armand Eugene Albert Koolen , Sebastianus Adrianus Goorden , Bastiaan Onne Fagginger Auer , Simon Gijsbert Josephus Mathijssen
CPC classification number: G03F7/7055 , G01B11/272 , G01N21/4788 , G01N21/9501 , G01N21/95623 , G03F7/70625 , G03F7/70633
Abstract: A metrology apparatus is disclosed that measures a structure formed on a substrate to determine a parameter of interest. The apparatus comprises an optical system configured to focus radiation onto the structure and direct radiation after reflection from the structure onto a detector, wherein: the optical system is configured such that the detector detects a radiation intensity resulting from interference between radiation from at least two different points in a pupil plane field distribution, wherein the interference is such that a component of the detected radiation intensity containing information about the parameter of interest is enhanced relative to one or more other components of the detected radiation intensity.
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68.发明申请公开(公告)号：US20180348145A1
公开(公告)日：2018-12-06
申请号：US15979990
申请日：2018-05-15
Applicant: ASML Netherlands B.V. , Stichting Nederlandse Wetenschappelijk Onderzoek Instituten , Stichting VU , Universiteit van Amsterdam
Inventor： Stefan Michiel WITTE , Gijsbert Simon Matthijs Jansen , Lars Christian Freisem , Kjeld Sijbrand Eduard Eikema , Simon Gijsbert Josephus Mathijssen
CPC classification number: G03F7/706 , G01J9/00 , G03F7/70133 , G03F7/70141 , G03F7/70191
Abstract: A metrology apparatus (302) includes a higher harmonic generation (HHG) radiation source for generating (310) EUV radiation. Operation of the HHG source is monitored using a wavefront sensor (420) which comprises an aperture array (424, 702) and an image sensor (426). A grating (706) disperses the radiation passing through each aperture so that the image detector captures positions and intensities of higher diffraction orders for different spectral components and different locations across the beam. In this way, the wavefront sensor can be arranged to measure a wavefront tilt for multiple harmonics at each location in said array. In one embodiment, the apertures are divided into two subsets (A) and (B), the gratings (706) of each subset having a different direction of dispersion. The spectrally resolved wavefront information (430) is used in feedback control (432) to stabilize operation of the HGG source, and/or to improve accuracy of metrology results.
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公开(公告)号：US09632039B2
公开(公告)日：2017-04-25
申请号：US14838268
申请日：2015-08-27
Applicant: Vrije Universiteit Amsterdam , Universiteit van Amsterdam , Stichting voor Fundamenteel Onderzoek der Materie , ASML Netherlands B.V.
Inventor： Arie Jeffrey Den Boef , Simon Gijsbert Josephus Mathijssen , Nitesh Pandey , Stefan Michiel Witte , Kjeld Eikema
CPC classification number: G01N21/956 , G01B11/00 , G01N2201/12 , G03F7/70141 , G03F7/70625 , G03F7/70633 , G03F7/70641 , G03H1/0443 , G03H2001/0033 , G03H2001/0204 , G03H2001/0458
Abstract: Metrology targets are formed on a substrate (W) by a lithographic process. A target (T) comprising one or more grating structures is illuminated with spatially coherent radiation under different conditions. Radiation (650) diffracted by from said target area interferes with reference radiation (652) interferes with to form an interference pattern at an image detector (623). One or more images of said interference pattern are captured. From the captured image(s) and from knowledge of the reference radiation a complex field of the collected scattered radiation at the detector. A synthetic radiometric image (814) of radiation diffracted by each grating is calculated from the complex field. From the synthetic radiometric images (814, 814′) of opposite portions of a diffractions spectrum of the grating, a measure of asymmetry in the grating is obtained. Using suitable targets, overlay and other performance parameters of the lithographic process can be calculated from the measured asymmetry.
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公开(公告)号：US09606442B2
公开(公告)日：2017-03-28
申请号：US14418373
申请日：2013-07-16
Applicant: ASML Netherlands B.V.
CPC classification number: G03F7/70141 , G03F9/7026 , G03F9/7034
Abstract: An apparatus for measuring positions of marks on a substrate, includes an illumination arrangement for supplying radiation with a predetermined illumination profile across a pupil of the apparatus, an objective lens for forming a spot of radiation on a mark using radiation supplied by said illumination arrangement, a radiation processing element for processing radiation that is diffracted by the mark, a first detection arrangement for detecting variations in an intensity of radiation output by the radiation processing element and for calculating therefrom a position of the mark, an optical arrangement, a second detection arrangement, wherein the optical arrangement serves to direct diffracted radiation to the second detection arrangement, and wherein the second detection arrangement is configured to detect size and/or position variations in the radiation and to calculate therefrom a defocus and/or local tilt of the mark.
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