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公开(公告)号：US12230469B2
公开(公告)日：2025-02-18
申请号：US17566518
申请日：2021-12-30
Applicant: ASML NETHERLANDS B.V.
Inventor： Albertus Victor Gerardus Mangnus , Maikel Robert Goosen
IPC: H01J37/153 , H01J37/28
Abstract: Disclosed among other aspects is a charged particle inspection system including a phaseplate configured and arranged to modify the local phase of charged particles in a beam to reduce the effects of lens aberrations. The phaseplate is made up of an array of apertures with the voltage and/or a degree of obscuration of the apertures being controlled individually or in groups.
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公开(公告)号：US10527958B2
公开(公告)日：2020-01-07
申请号：US16132520
申请日：2018-09-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Sudharshanan Raghunathan , Boris Menchtchikov , Ahmet Koray Erdamar , Loek Johannes Petrus Verhees , Willem Seine Christian Roelofs , Wendy Johanna Martina Van De Ven , Hadi Yagubizade , Hakki Ergün Cekli , Ralph Brinkhof , Tran Thanh Thuy Vu , Maikel Robert Goosen , Maaike Van't Westeinde , Weitian Kou , Manouk Rijpstra , Matthijs Cox , Franciscus Godefridus Casper Bijnen
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured to measure a property of a substrate is disclosed. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameter values for the plurality of substrates using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameter values; and determining the one or more optimized values of the operational parameter based on the comparing.
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3.发明授权公开(公告)号：US12183540B2
公开(公告)日：2024-12-31
申请号：US17726421
申请日：2022-04-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Yifeng Shao , Maikel Robert Goosen
IPC: H01J37/22 , H01J37/153 , H01J37/244 , H01J37/28
Abstract: A method of determining aberrations in images obtained by a charged-particle beam tool, comprising: a) obtaining two or more images of a sample, wherein each image is obtained at a known relative difference in a measurement condition of the charged-particle beam tool; b) selecting an estimated aberration parameter for the aberrations of a probe profile representing the charged-particle beam used by the charged-particle beam tool; c) evaluating an error function indicative of the difference between the two or more images and two or more estimated images that are a function of the estimated aberration parameter and the known relative difference in the measurement condition; d) updating the estimated aberration parameter; e) performing processes c) and d) iteratively; f) determining the final aberration parameter as the estimated aberration parameter that provides the smallest value of the error function.
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4.发明授权公开(公告)号：US11961700B2
公开(公告)日：2024-04-16
申请号：US17601697
申请日：2020-03-25
Applicant: ASML Netherlands B.V.
CPC classification number: H01J37/222 , G06T7/001 , H01J37/28 , G06T2207/10061 , G06T2207/20048 , G06T2207/30141 , H01J2237/223 , H01J2237/2817
Abstract: Embodiments consistent with the disclosure herein include methods for image enhancement for a multi-beam charged-particle inspection system. Systems and methods consistent with the present disclosure include analyzing signal information representative of first and second images, wherein the first image is associated with a first beam of a set of beams and the second image is associated with a second beam of the set of beams; detecting, based on the analysis, disturbances in positioning of the first and second beams in relation to a sample; obtaining an image of the sample using the signal information of the first and second beams; and correcting the image of the sample using the identified disturbances.
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公开(公告)号：US10474039B2
公开(公告)日：2019-11-12
申请号：US15384084
申请日：2016-12-19
Applicant: ASML Netherlands B.V.
Inventor： Paul Christiaan Hinnen , Simon Gijsbert Josephus Mathijssen , Maikel Robert Goosen , Maurits Van Der Schaar , Arie Jeffrey Den Boef
Abstract: A lithographic apparatus (LA) prints product features and at least one focus metrology pattern (T) on a substrate. The focus metrology pattern is defined by a reflective reticle and printing is performed using EUV radiation (404) incident at an oblique angle (θ). The focus metrology pattern comprises a periodic array of groups of first features (422). A spacing (S1) between adjacent groups of first features is much greater than a dimension (CD) of the first features within each group. Due to the oblique illumination, the printed first features become distorted and/or displaced as a function of focus error. Second features 424 may be provided as a reference against which displacement of the first features may be seen. Measurement of this distortion and/or displacement may be by measuring asymmetry as a property of the printed pattern. Measurement can be done at longer wavelengths, for example in the range 350-800 nm.
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Patent Agency Ranking
公开(公告)号：US11942302B2
公开(公告)日：2024-03-26
申请号：US17361119
申请日：2019-12-17
Applicant: ASML Netherlands B.V.
Inventor： Arno Jan Bleeker , Pieter Willem Herman De Jager , Maikel Robert Goosen , Erwin Paul Smakman , Albertus Victor Gerardus Mangnus , Yan Ren , Adam Lassise
IPC: H01J37/09 , H01J37/147 , H01J37/244 , H01J37/26 , H01J37/28
CPC classification number: H01J37/1474 , H01J37/244 , H01J37/265 , H01J37/28 , H01J2237/24475 , H01J2237/2448 , H01J2237/2817
Abstract: Apparatuses and methods for charged-particle detection may include a deflector system configured to direct charged-particle pulses, a detector having a detection element configured to detect the charged-particle pulses, and a controller having a circuitry configured to control the deflector system to direct a first and second charged-particle pulses to the detection element; obtain first and second timestamps associated with when the first charged-particle pulse is directed by the deflector system and detected by the detection element, respectively, and third and fourth timestamps associated with when the second charged-particle pulse is directed by the deflector system and detected by the detection element, respectively; and identify a first and second exiting beams based on the first and second timestamps, and the third and fourth timestamps, respectively.
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公开(公告)号：US11791132B2
公开(公告)日：2023-10-17
申请号：US16830204
申请日：2020-03-25
Applicant: ASML Netherlands B.V.
IPC: H01J37/317 , H01J37/24 , H01J37/244 , H01J37/304
CPC classification number: H01J37/3177 , H01J37/243 , H01J37/244 , H01J37/3045 , H01J2237/0435
Abstract: Systems and methods of measuring beam current in a multi-beam apparatus are disclosed. The multi-beam apparatus may include a charged-particle source configured to generate a primary charged-particle beam, and an aperture array. The aperture array may comprise a plurality of apertures configured to form a plurality of beamlets from the primary charged-particle beam, and a detector including circuitry to detect a current of at least a portion of the primary charged-particle beam irradiating the aperture array. The method of measuring beam current may include irradiating the primary charged-particle beam on the aperture array and detecting an electric current of at least a portion of the primary charged-particle beam.
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公开(公告)号：US10962887B2
公开(公告)日：2021-03-30
申请号：US16686418
申请日：2019-11-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Sudharshanan Raghunathan , Boris Menchtchikov , Ahmet Koray Erdamar , Loek Johannes Petrus Verhees , Willem Seine Christian Roelofs , Wendy Johanna Martina Van De Ven , Hadi Yagubizade , Hakki Ergün Cekli , Ralph Brinkhof , Tran Thanh Thuy Vu , Maikel Robert Goosen , Maaike Van't Westeinde , Weitian Kou , Manouk Rijpstra , Matthijs Cox , Franciscus Godefridus Casper Bijnen
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method including: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.
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公开(公告)号：US10416577B2
公开(公告)日：2019-09-17
申请号：US15777162
申请日：2016-11-29
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
Inventor： Ralph Brinkhof , Simon Gijsbert Josephus Mathijssen , Maikel Robert Goosen , Vassili Demergis , Bartolomeus Petrus Rijpers
Abstract: A method of measuring a position of an alignment target on a substrate using an optical system. The method includes measuring a sub-segmented target by illuminating the sub-segmented target with radiation and detecting radiation diffracted by the sub-segmented target using a detector system to obtain signals containing positional information of the one sub-segmented target. The sub-segmented target has structures arranged periodically in at least a first direction, at least some of the structures including smaller sub-structures, and each sub-segmented target is formed with a positional offset between the structures and the sub-structures that is a combination of both known and unknown components. The signals, together with information on differences between known offsets of the sub-segmented target are used to calculate a measured position of an alignment target which is corrected for the unknown component of the positional offset.
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公开(公告)号：US12165836B2
公开(公告)日：2024-12-10
申请号：US17770043
申请日：2020-10-15
Applicant: ASML NETHERLANDS B.V.
Inventor： Maikel Robert Goosen , Erwin Paul Smakman
IPC: H01J37/22 , H01J37/244 , H01J37/26 , H01J37/28
Abstract: Systems and methods of profiling a charged-particle beam are disclosed. The method of profiling a charged-particle beam may comprise activating a charged-particle source to generate the charged-particle beam along a primary optical axis, modifying the charged-particle beam by adjusting an interaction between the charged-particle beam and a standing optical wave, detecting charged particles from the modified charged-particle beam after the interaction with the standing optical wave, and determining a profile of the charged-particle beam based on the detected charged particles. Alternatively, the method may include activating an optical source, modifying the optical beam by adjusting an interaction between the optical beam and a charged-particle beam, detecting an optical signal from the modified optical beam, and determining a characteristic of the charged-particle beam based on the detected optical signal.
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