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公开(公告)号：JPH1154026A
公开(公告)日：1999-02-26
申请号：JP21030497
申请日：1997-08-05
Applicant: CANON KK
Inventor： IKEDA SOTOMITSU
Abstract: PROBLEM TO BE SOLVED: To stably control the electron emitting characteristic with good uniformity by covering an element electrode with a film mainly composed of carbon by plasma excitation chemical gas phase accumulation (plasma CVD method) for applying a voltage between the element electrode and an anode electrode in an atmosphere containing a carbon source gas. SOLUTION: Element electrodes 2, 3 are formed on a base 11, and a conductive film 6 is formed thereon. A current is carried, for example between the element electrodes 2, 3 to form a crack 5' in the conductive film 6 by forming process. The resulting formed element is subjected to a treatment by plasma CVD for applying a voltage between the element electrodes 2, 3 and an anode electrode in an atmosphere containing a carbon source gas to cover the element electrode 2 and a part of the conductive film 6 electrically connected thereto with a carbonaceous film 4. The element covered with the film 4 is completed through the following process.
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公开(公告)号：JP2543551B2
公开(公告)日：1996-10-16
申请号：JP33572987
申请日：1987-12-28
Applicant: CANON KK
Inventor： SEKIGUCHI YOSHINOBU , IKEDA SOTOMITSU
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63.发明专利
公开(公告)号：JPH08162002A
公开(公告)日：1996-06-21
申请号：JP32115794
申请日：1994-12-01
Applicant: CANON KK
Inventor： IKEDA SOTOMITSU , TAKEDA TOSHIHIKO , SUZUKI HIDETOSHI , BANNO YOSHIKAZU , SANDO KAZUHIRO , KAWATE SHINICHI , NOMURA ICHIRO
Abstract: PURPOSE: To provide a surface conductive electron emission element as an electron source by which the large area and the high grade of an image forming device can be realized. CONSTITUTION: In a surface conductive electron emission element wherein an electron emitting part 2 is provided on a conductive thin film 3 extending between element electrodes 4, 5 formed on a base plate 1, one side element electrode 5 is alloy-reacted with the conductive thin film 3, and the other element electrode 4 dose not exhibit reactivity with the conductive thin film 3, and the electron emitting part 2 is formed near only the edge of the element electrode 5 by the alloy reaction to be generated by heat treatment. Since the shape and the position of the electron emitting part 2 can be controlled, the element having uniform electron emission characteristics can be obtained.
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公开(公告)号：JPH05297313A
公开(公告)日：1993-11-12
申请号：JP12425292
申请日：1992-04-17
Applicant: CANON KK
Inventor： IKEDA SOTOMITSU , YAMAMOTO KEISUKE
IPC: G02B6/122 , G02B6/12 , G02B26/08 , G02B26/10 , H01S3/06 , H01S3/101 , H01S5/00 , H01S5/026 , H01S3/18
Abstract: PURPOSE:To obtain the semiconductor laser deflecting element being a light source which is useful for a spatial optical modulator, optical recording, etc. CONSTITUTION:A semiconductor laser element 'I' to which a current can be impressed and a cantilever optical waveguide element 'II' which consists of a piezoelictric body layer 13 and electrodes 12 and 14 and can be displaced are formed on the same substrate 1 in monolithic structure. Currents can be impressed to the semiconductor laser element and cantilever optical waveguide element independently. The light emitted by the semiconductor laser element 'I' passes through the cantilever optical waveguide element 'II' and is deflected and projected out.
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公开(公告)号：JPH04340290A
公开(公告)日：1992-11-26
申请号：JP14088691
申请日：1991-05-16
Applicant: CANON KK
Inventor： IKEDA SOTOMITSU
IPC: H01S5/00 , H01S5/06 , H01S5/0625 , H01S5/343
Abstract: PURPOSE:To provide a method for controlling and driving an oscillation wavelength of a semiconductor laser, which can oscillating wavelengths with excellent controllability even at the time of modulating at a high speed. CONSTITUTION:A semiconductor laser has a laminated structure having active layers made of a plurality of light emitting layers 1, 2 having different energy levels. Oscillation wavelengths lambda1, lambda2 of the laser are varied by altering a pulse time of a pulse current injected to the laser.
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Patent Agency Ranking
公开(公告)号：JPH04245493A
公开(公告)日：1992-09-02
申请号：JP2963391
申请日：1991-01-30
Applicant: CANON KK
Inventor： IKEDA SOTOMITSU
Abstract: PURPOSE:To widen the variable range of the wavelength of the title laser element by a method wherein the laser element is constituted into such a structure that resonators having oscillator lengths of a plurality of different lengths are installed along the resonance direction so as to oscillate the lights of wavelengths to correspond to the respective band gaps of a luminous layer structure and a current can be injected in each resonator independently of other resonators. CONSTITUTION:In a semiconductor layer element, which consists of an optical waveguide structure 4 comprising a luminous layer structure having a plurality of band gaps different from each other and clad layers 3 and 5 laminated holding the structure 4 between them, the semiconductor laser element is constituted into such a structure that resonators having resonator lengths L1 and L2 of a plurality of different lengths are installed along the resonance direction so as to oscillate the lights of wavelengths to correspond to the respective band gaps of the luminous layer structure and a current can be injected in each resonator independently of other resonators. Thereby, a plurality of semiconductor laser elements can be monolithically formed on the same substrate by a simple manufacturing process.
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公开(公告)号：JPH04211188A
公开(公告)日：1992-08-03
申请号：JP5401091
申请日：1991-02-26
Applicant: CANON KK
Inventor： IKEDA SOTOMITSU
Abstract: PURPOSE:To provide a variable wavelength semiconductor laser element which has a wide variable wavelength range and highly efficiently operates and the driving method of the laser element. CONSTITUTION:An optical waveguide structure section containing a plurality of light emitting layers 11a and 11b having different band gaps and a barrier layer 12 provided between the layers 11a and 11b is put between clad layers 13 and 15. The band gap and thickness of the layer 12 are set to such magnitudes that the carrier concentration of the layer 11b having the larger band gap can become higher and that of the layer 11a having the smaller band gap can become lower when carriers are injected into the layers 11a and 11b as compared with the case where the barrier layer is not provided. In addition, they are also set to such magnitudes that the band gap of the layer 11b having the larger band gap at the basic level can become nearly equal to one of the band gaps at higher-order levels of the layer 11a having the smaller band gap.
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公开(公告)号：JPH02263491A
公开(公告)日：1990-10-26
申请号：JP8393089
申请日：1989-04-04
Applicant: CANON KK
Inventor： IKEDA SOTOMITSU
Abstract: PURPOSE:To manufacture a semiconductor laser for dynamic-single-longitudinal mode oscillations having optical wave guides of low loss which are suitable for integration by providing two channels of optical waveguide layers which are combined optically by diffraction gratings and performing current injection from a transverse direction to an active layer. CONSTITUTION:At least the 1st and 2nd optical waveguides 2 and 5 which are used for emitting light and for combining optically with an active layer 4 respectively are provided and both of them are combined optically by diffraction gratings 21 and 22 in which their degree are high, i.e., more than second order. In a dynamic-single-longitudinal mode oscillation laser that is manufactured in this way, carriers are injected horizontally from a transverse direction to the active layer 4 and then the carriers combine each other again in an active waveguide to emit light. Distributed feedback of light emitted is performed by the diffraction gratings of the 2nd optical waveguides 5 and its light combines optically with the 1st optical waveguide 2. Then it is induced and emitted in an active region by being reflected in the form of distribution. The waveguides of oscillating light become uniform and even when amplitude modulation takes place, they may oscillate at a stable, dynamic-single-mode.
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公开(公告)号：JPH0242781A
公开(公告)日：1990-02-13
申请号：JP19209588
申请日：1988-08-02
Applicant: CANON KK
Inventor： IKEDA SOTOMITSU
IPC: H01S5/00
Abstract: PURPOSE:To obtain plural kinds of desired oscillation wavelengths and to manufacture this laser device comparatively easily by a method wherein a light waveguide layer is doped with an impurity and many wavelengths are oscillated. CONSTITUTION:A laser A oscillating a beam of a wavelength lambda1 and a laser B oscillating a beam of a wavelength lambda2 are integrated. Since a light waveguide part of the laser A is not doped with an impurity, the wavelength lambda1 identical to that of an ordinary DBR laser apparatus is oscillated. On the other hand, since the laser B has a part (d) doped with an impurity in its light waveguide part, its oscillation wavelength oscillates a beam whose wavelength is shorter than the wavelength lambda1, i.e., the beam of the wavelength lambda2. Thereby, it is possible to obtain a laser apparatus where a desired position of the light waveguide layer is doped with the impurity at a desired concentration and which oscillates plural kinds of wavelength according to the impurity. In addition, a shape of its diffraction grating may be only one; its manufacture is comparatively easy.
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公开(公告)号：JPH01282883A
公开(公告)日：1989-11-14
申请号：JP11149088
申请日：1988-05-10
Applicant: CANON KK
Inventor： IKEDA SOTOMITSU
IPC: H01S5/00
Abstract: PURPOSE:To suppress the side mode instability due to a lowered refraction factor on account of increased carriers by making the distribution of the carrier density at the time of oscillation in an active layer into a broad twin-peak shape in a refraction factor waveguide type laser. CONSTITUTION:An AlGaAs compound semiconductor is epitaxially grown on an n -GaAs substrate 9, a p -GaAs active layer 6 is placed between an n -Al0.4Ga0.8As clad layer 7 and a p -Al0.4Ga0.8As clad layer 5, while an n -GaAs buffer layer 8 is formed between the substrate and an n-type clad layer 7. After filming a p-type clad layer 5, a ridge is processed, later regrow is performed, a p -GaAs cap layer 4 is filed so as to take ohmic contact with a p-side electrode. The current injection windows (a) and (b) are formed on both sides of the ridge bottom part, while an insulating film 3 such as Si3N4 and SiO2 is filmed outside the current injection windows of the ridge part and the ridge bottom part.
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