公开(公告)号：AT86794T

公开(公告)日：1993-03-15

申请号：AT87303341

申请日：1987-04-15

Applicant: CANON KK

Inventor： SANO MASAFUMI

IPC: C23C16/02 ,  C23C16/04 ,  C23C16/24 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C30B25/02 ,  C30B28/14 ,  C30B29/06 ,  H01L21/205

公开(公告)号：AU598247B2

公开(公告)日：1990-06-21

申请号：AU7151587

申请日：1987-04-14

Applicant: CANON KK

Inventor： SANO MASAFUMI

IPC: C23C16/02 ,  C23C16/04 ,  C23C16/24 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C30B25/02 ,  C30B28/14 ,  C30B29/06 ,  H01L21/205 ,  H01L21/203 ,  H01L21/225 ,  H01L21/26 ,  H01L21/302

公开(公告)号：JP2000192245A

公开(公告)日：2000-07-11

申请号：JP2000002672

申请日：2000-01-11

Applicant: CANON KK

Inventor： NIWA MITSUYUKI ,  SAITO KEISHI ,  TONOGAKI MASAHIKO ,  SANO MASAFUMI ,  HAYASHI SUSUMU ,  SAKAI AKIRA ,  FUJIOKA YASUSHI ,  OKABE SHOTARO ,  YOSHISATO SUNAO ,  KANAI MASAHIRO

IPC: H01L21/205 ,  C23C16/509 ,  C23C16/511 ,  C23C16/517 ,  H01L31/04

Abstract: PROBLEM TO BE SOLVED: To provide a deposition film forming method by a microwave plasma CVD method capable of forming a deposition film at a high speed and capable of reducing unevenness in the film thickness and characteristics of the deposition film. SOLUTION: In a microwave plasma CVD method in which, under low pressure, a gaseous starting material for forming a deposition film is cracked by microwave energy to form a deposition film on a substrate 104, at a vacuum of

公开(公告)号：JPH11246971A

公开(公告)日：1999-09-14

申请号：JP5032198

申请日：1998-03-03

Applicant: CANON KK

Inventor： TOKAWA MAKOTO ,  SANO MASAFUMI

IPC: H01L31/04 ,  C23C16/24 ,  C23C16/509 ,  C23C16/54

Abstract: PROBLEM TO BE SOLVED: To provide a method for producing a microcrystal silicon series thin film capable of realizing a microcrystal semiconductor device of high quality. SOLUTION: Plural bar-shaped electrodes 204 are arranged in such a manner that they are orthogonally crossed with the normal of a long size substrate 202, and also, their interval with the long size substrate 202 is made wide on the upper part side in the substrate carrying direction and is made narrow on the lower part side, and glow discharge is executed at the discharge frequency of 50 to 550 MHz, by which a microcrystal silicon series thin film is deposited on the long size substrate.

公开(公告)号：JPH11243218A

公开(公告)日：1999-09-07

申请号：JP4473198

申请日：1998-02-26

Applicant: CANON KK

Inventor： SANO MASAFUMI ,  NAKAMURA TETSUO

IPC: H01L31/04 ,  H01L31/06 ,  H01L31/076 ,  H01L31/077 ,  H01L31/18 ,  H01L31/20

Abstract: PROBLEM TO BE SOLVED: To provide a laminated photovoltaic element at low cost, while being high in reliability and photoelectric transfer efficiency. SOLUTION: A plurality of component elements of pin joint made of a p-type layer of silicon-based non single-crystal semiconductor, an i-type layer, and an n-type layer are laminated, while an amorphous silicon is used as the i-type layer of a first pin joint on light-incident side, a microcrystal silicon is used as the i-type layer of a second pin joint, and a microcrystal silicon is used a the I-type layer of third pin joint.

公开(公告)号：JPH10313127A

公开(公告)日：1998-11-24

申请号：JP12192197

申请日：1997-05-13

Applicant: CANON KK

Inventor： SANO MASAFUMI ,  SONODA YUICHI

IPC: C01G9/02 ,  C25D9/04 ,  C25D9/08 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/04

Abstract: PROBLEM TO BE SOLVED: To form irregularities on the surface by feeding a current between a conductive substrate and anode electrode both immersed in a water soln., contg. at least Zn ions, ammonia ions and Zn-ammonia complex ions to form a zinc oxide film on the substrate. SOLUTION: A conductive substrate 103 is formed as a cathode and a counter electrode as an anode. When a source of complex ions such as Zn ions and excessive ammonia ions uses, e.g. a water soln. of ammonia with zinc hydroxide, the complex ion concn. is set to 0.001-3.0 mol./l with a water soln. pH controlled to be 8-12.5, the temp. is set for over 50 deg.C, and the current density on the surface of the substrate 103 is set to 0.1-100 mA/cm . Generally, the higher ion concn. provides larger grain size of zinc oxide enabling irregularities to be formed on the surface.

公开(公告)号：JPH10229212A

公开(公告)日：1998-08-25

申请号：JP34513597

申请日：1997-12-15

Applicant: CANON KK

Inventor： SANO MASAFUMI ,  KARIYA TOSHIMITSU

IPC: C25D9/08 ,  H01L21/3063 ,  H01L31/04

Abstract: PROBLEM TO BE SOLVED: To improve the photoconductive characteristics such as photoelectric conversion efficiency and leakage curent of photovoltaic element, by a method wherein a conductive substrate immersed in a water solution and an electrode immersed in a solution are made conductive so as to form a zinc oxide film on a conductive substrate to be etched away for the formation of a semiconductor layer. SOLUTION: Zinc nitrate water solution 203 in a specific concentration is prepared in a vessel 204 so as to satisfactorily agitate the water solution 203 using a magnetic agitator further to heat the solution up to a specific temperature using a heater 208. Next, a conductive substrate 201 whereon an opposite electrode 202 and an insulating tape 206 are bonded is connected to a power supply 205 and a load resistor 207, to form a circuit through the intermediary of water solution for the formation of a transparent zinc oxide thin film on the surface of a conductive substrate 201 on the negative electrode side, by impressing the circuit with a voltage in a rated current mode. Later, the thin film of the zinc oxide layer is etched away to form a semiconductor layer. Through these procedures, the photoconductive characteristics such as the photoelectric conversion efficiency, leakage current, etc., of the photovoltaic element can be improved.

公开(公告)号：JPH0992856A

公开(公告)日：1997-04-04

申请号：JP24719695

申请日：1995-09-26

Applicant: CANON KK

Inventor： SANO MASAFUMI ,  SAITO KEISHI

IPC: H01L31/04 ,  H01L21/203

Abstract: PROBLEM TO BE SOLVED: To suppress the surface oxidation of a reflection layer by forming a specified zinc oxide-made intermediate layer between a support and reflective layer, specifying the support temp. of the reflection layer and reflection-enhanced layer and depositing them which improves the rough surface of the metal-made reflection layer to provide a surface condition capable of displaying enough the light confining effect. SOLUTION: A support 100 is carried to a carrying vacuum chamber, the back side of the support is closely contacted with a support heating heater to heat it enough to generate an Ar plasma hereby an intermediate layer 199 of an oxide contg. at least one element selected from among Ag, Ni, Fe, Cr and Cu is formed on the surface of the support 100. The support is heated at 200-500 deg.C to generate an Ar plasma to form a light reflective Ag layer 101. The support temp. is lowered below 100 deg.C in a support cooling gas atmosphere and then increased to 200-400 deg.C to generate an Ar plasma to form a surface reflection enhancing oxide layer 102 on the surface of the layer 101.

公开(公告)号：JPH0992849A

公开(公告)日：1997-04-04

申请号：JP24720495

申请日：1995-09-26

Applicant: CANON KK

Inventor： SANO MASAFUMI ,  SAITO KEISHI

IPC: H01L31/04

Abstract: PROBLEM TO BE SOLVED: To restrain surface oxidation by providing an intermediate layer made of zinc oxide between a support and a reflection layer, depositing the reflection layer at a predetermined support temperature, then cooling the support down to a predetermined or lower temperature, and depositing a reflection increment layer at a predetermined support temperature to make the state of surface irregularity of the reflective layer appropriate for exhibiting high light confinement effect. SOLUTION: A support 100 is carried into a vacuum carrier chamber and the back side of the support 100 is heated in contact with a support heater, thus forming an intermediate layer 199 of oxide on the surface of the support 100. Then, the temperature of the support is set to 200-500 deg.C and an Ar plasma is generated, thus forming an optical reflective layer 101 made mainly of Ag. The temperature of the support is lowered not to exceed 100 deg.C in a support cooling gas atmosphere. Further, the temperature of the support is raised to 200-400 deg.C and an Ar plasma is generated, thus forming a surface reflection increment layer 102 of oxide made mainly of zinc oxide on the surface of the Ag optical reflective layer 101. Thus, surface oxidation of the reflective layer 101 may be restrained and high reflectance on the reflective layer 101 may be maintained.

公开(公告)号：JPH07297431A

公开(公告)日：1995-11-10

申请号：JP9189794

申请日：1994-04-28

Applicant: CANON KK

Inventor： SANO MASAFUMI ,  SAITO KEISHI

IPC: H01L21/205 ,  H01L31/04

Abstract: PURPOSE:To provide a photovoltaic element forming method by which a high- performance photovoltaic element can be formed by using such a hydrogen plasma treatment method that impurities adsorbed to and contained in the internal wall surface of a chamber can be prevented substantially and stable discharge can be obtained. CONSTITUTION:In a photovoltaic element forming method in which two or more pin structures formed by successively piling up a non-single crystal n-type layer 203, non-single crystal i-type n/i buffer layer 251, non-single crystal i-type layer 204, non-single crystal i-type p/i buffer layer 261, and non-single crystal p-type layer 205 upon another are piled up on a substrate, the vicinity of the interface between the layers 205 and 203 to plasma treatment performed by using a hydrogen gas mixed with a gas containing silicon atoms in such a degree that the atoms do not accumulate substantially.