公开(公告)号：JP2000199097A

公开(公告)日：2000-07-18

申请号：JP37771498

申请日：1998-12-28

Applicant: CANON KK

Inventor： TOKAWA MAKOTO

IPC: H01L31/04 ,  C01G9/02 ,  C25D7/12 ,  C25D9/04 ,  H01M14/00

Abstract: PROBLEM TO BE SOLVED: To efficiently form a film of zinc oxide which is uniform, appropriate in unevenness, and excellent in quality with easy control of the concentration and temperature of the solution and with small solution consumption by a liquid phase deposition method by providing a non-water-soluble liquid which is smaller in specific gravity and lower in vapor pressure than an aqueous solution so that the film of zinc oxide is brought into contact with the level of the aqueous solution formed through the electrolysis. SOLUTION: A container 101 is filled with an aqueous solution 104 in which a solvent containing zinc, an assistant (nitric acid, acetic acid, formic acid, oxalic acid, ammonium, etc.), for precipitation of zinc oxide, and an aqueous solution in which additives are solved, and the aqueous solution 104 is maintained at the specified temperature by a thermometer 107 and a heater 106. The specified current is applied between a substrate 103 (a matter to be electrolyzed) and electrodes 102 opposite to each other. A non-water-soluble liquid 108 smaller in specific gravity and lower in vapor pressure than the aqueous solution 104 is provided on the surface of the aqueous solution 104. The non-water-soluble liquid 108 preferably is not reacted with the assistant, and mainly consists of paraffin, olefin, oil and grease, wax, etc.

公开(公告)号：JPH11246971A

公开(公告)日：1999-09-14

申请号：JP5032198

申请日：1998-03-03

Applicant: CANON KK

Inventor： TOKAWA MAKOTO ,  SANO MASAFUMI

IPC: H01L31/04 ,  C23C16/24 ,  C23C16/509 ,  C23C16/54

Abstract: PROBLEM TO BE SOLVED: To provide a method for producing a microcrystal silicon series thin film capable of realizing a microcrystal semiconductor device of high quality. SOLUTION: Plural bar-shaped electrodes 204 are arranged in such a manner that they are orthogonally crossed with the normal of a long size substrate 202, and also, their interval with the long size substrate 202 is made wide on the upper part side in the substrate carrying direction and is made narrow on the lower part side, and glow discharge is executed at the discharge frequency of 50 to 550 MHz, by which a microcrystal silicon series thin film is deposited on the long size substrate.

公开(公告)号：JP2001358350A

公开(公告)日：2001-12-26

申请号：JP2000175984

申请日：2000-06-12

Applicant: CANON KK

Inventor： KONDO TAKAHARU ,  SANO MASAFUMI ,  TOKAWA MAKOTO ,  MATSUDA KOICHI

IPC: H01L31/04

Abstract: PROBLEM TO BE SOLVED: To provide a photovoltaic element which has excellent photoelectric characteristics at low cost and at a film forming speed applicable to a process time at an industrially practical level. SOLUTION: The photovoltaic element comprises a substrate having on a base body at least a first laminated transparent conductive layer, a silicon- based semiconductor layer having at least one of pin junctions which is laminated on the substrate, and a second transparent conductive layer 103 laminated on the silicon-based semiconductor layer. In the pin junction of the silicon-based semiconductor layer, there are laminated in succession a foundational layer, an i-type semiconductor layer 102-2 containing a crystal phase, and a second conduction type non-single-crystal semiconductor layer 102-3. Further, in the foundational layer, there are laminated in succession a first conductivity type amorphous semiconductor layer 102-1A and a first conductivity type semiconductor layer 102-1B containing a crystal phase. Moreover, the grain size of the first conductivity type semiconductor layer 102-1B containing a crystal phase is increased toward the i-type semiconductor layer 102-2 containing a crystal phase.

公开(公告)号：JP2002353485A

公开(公告)日：2002-12-06

申请号：JP2002027496

申请日：2002-02-04

Applicant: CANON KK

Inventor： KONDO TAKAHARU ,  SANO MASAFUMI ,  MATSUDA KOICHI ,  TOKAWA MAKOTO

IPC: H01L21/205 ,  H01L31/04

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a silicon thin film, having superior photoelectric characteristics at industrially practical film formation speed, a silicon-based thin film formed by the method, and a photovoltaic element using the silicon-based thin film. SOLUTION: In the method, a feed gas, containing halogenated silicon and hydrogen is be introduced into a vacuum container whose one internal portion is covered with a solid containing silicon, plasma is generated in space inside the vacuum container, and than the silicon-based film is formed on a substrate inside the vacuum container.

公开(公告)号：JP2001345273A

公开(公告)日：2001-12-14

申请号：JP2000162805

申请日：2000-05-31

Applicant: CANON KK

Inventor： KONDO TAKAHARU ,  MATSUDA KOICHI ,  TOKAWA MAKOTO

IPC: C23C16/24 ,  C23C16/509 ,  C30B25/10 ,  H01L21/205 ,  H01L31/0376 ,  H01L31/04 ,  H01L31/06 ,  H01L31/076 ,  H01L31/077 ,  H01L31/18 ,  H01L31/20

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a silicon thin film having excellent photoelectric characteristics at film formation speed that is at a practical use level industrially, the silicon thin film, and a photovoltaic element. SOLUTION: In the frequency plasma CVD method using a gas containing halogenated silicon and hydrogen, when high-frequency power P0 (W), high-frequency introduction part area S (cm2), distance (d) (cm) between the high-frequency introduction part and a substrate, and pressure PR (mToor) are expressed by Q=P0×PR/S/d, the value of the W should be set to 50 or more.

公开(公告)号：JP2001028453A

公开(公告)日：2001-01-30

申请号：JP19984699

申请日：1999-07-14

Applicant: CANON KK

Inventor： SHIOZAKI ATSUSHI ,  SANO MASAFUMI ,  KONDO TAKAHARU ,  KARIYA TOSHIMITSU ,  TOKAWA MAKOTO

IPC: E04D3/40 ,  E04D13/18 ,  H01L31/0368 ,  H01L31/04 ,  H01L31/042 ,  H01L31/048 ,  H01L31/06 ,  H01L31/075 ,  H01L31/08 ,  H01L31/18 ,  H01L31/20

Abstract: PROBLEM TO BE SOLVED: To provide a photovoltaic device which is capable of generating a large current, manufactured at a high deposition speed, comparatively small in thickness, high in conversion efficiency, manufactured at a low temperature and at a low cost, and excellent in productivity. SOLUTION: This photovoltaic device is equipped with a structure composed of a first semiconductor layer 4A, which contains no crystals, a second semiconductor layer 4B which contains nearly spherical fine crystals, and a third semiconductor layer 4C which contains columnar fine crystals that are laminated in this sequence, where the second semiconductor layer 4B starts making its fine spherical crystals become gradually larger in average diameter from its contacting surface with the first semiconductor layer 4A toward the third semiconductor layer 4C.

公开(公告)号：JPH07169697A

公开(公告)日：1995-07-04

申请号：JP31356993

申请日：1993-12-14

Applicant: CANON KK

Inventor： SANO MASAFUMI ,  TOKAWA MAKOTO ,  TOKUTAKE NOBUO ,  HAYASHI SUSUMU

IPC: C23C16/52 ,  H01L21/205

Abstract: PURPOSE:To keep film characteristics of excellent quality and reduce a light deterioration by a method wherein a hold time within a vacuum container of material gas and diluted gas is made a specific period and the flux of diluted gas is changed along with growth of a deposited film, so that the deposited film is formed that an element composition is changed in a film thickness direction. CONSTITUTION:The inside of a vacuum container 101 is discharged, while specific material gas and diluted gas are respectively introduced in a hold time 1 to 50msec from gas supply pipes 118, 119. Next, microwaves are received from a microwave generator 120 through a waveguide 121 and a dielectric window 122 to produce a plasma in a film formation space 104. At this time, the material gas introduced from the gas supply pipe 118 is sprayed uniformly through a material gas introduction hole 123 and the introduced gas is diffused from a diluted gas nozzle 117 in the base carry direction, so that the dilution ratio of material gas is continuously changed. Thus, a film composition deposited on a base 103 is changed in the film thickness direction.

公开(公告)号：JP2002134772A

公开(公告)日：2002-05-10

申请号：JP2000323521

申请日：2000-10-24

Applicant: CANON KK

Inventor： KONDO TAKAHARU ,  SANO MASAFUMI ,  MATSUDA KOICHI ,  TOKAWA MAKOTO

IPC: C30B29/06 ,  H01L21/205 ,  H01L29/06 ,  H01L31/00 ,  H01L31/0236 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/04 ,  H01L31/072 ,  H01L31/075 ,  H01L31/076 ,  H01L31/077 ,  H01L31/10 ,  H01L31/109 ,  H01L31/18 ,  H01L35/28

Abstract: PROBLEM TO BE SOLVED: To provide a photovoltaic element having superior photoelectric characteristics, especially on a substrate having an irregular surface shape, at a low cost and a film forming rate of industrially practical level of process time. SOLUTION: In the silicon based thin film, including a crystal phase formed on a base substance, the silicon based thin film is formed on a shape such as a sampling length dx in the cross-sectional shape (f) of the surface is in the range of 20 nm-100 nm, and the standard deviation of inclination angle arctan (df/dx) is in the range of 15 deg.-55 deg.. Raman scattering intensity caused by the amorphous component of the silicon-based thin film is not higher than the Raman scattering intensity caused by the crystal component, and the difference between the face interval in the direction parallel with respect to the base substance and the face interval of single-crystal silicon is in the range of 0.2%-1.0% of the face interval of single-crystal silicon.

公开(公告)号：JP2001316818A

公开(公告)日：2001-11-16

申请号：JP2001042459

申请日：2001-02-19

Applicant: CANON KK

Inventor： KONDO TAKAHARU ,  SANO MASAFUMI ,  MATSUDA KOICHI ,  TOKAWA MAKOTO

IPC: C23C16/24 ,  C23C16/509 ,  C23C16/54 ,  C30B25/10 ,  H01L21/205 ,  H01L31/0376 ,  H01L31/04 ,  H01L31/18

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a film such as a silicon-based film which can form a film having a good quality and adhesiveness even in a high film-formation speed. SOLUTION: The method of forming a film on a substrate 204 by a plasma- CVD method with high frequency is characterized by forming a film by providing a resistance constituent 603 consisting of different material from the above substrate, on an electricity path between the substrate 204 and an earth.

公开(公告)号：JPH10204684A

公开(公告)日：1998-08-04

申请号：JP637997

申请日：1997-01-17

Applicant: CANON KK

Inventor： TOKAWA MAKOTO

IPC: C25D9/08 ,  H01L31/04

Abstract: PROBLEM TO BE SOLVED: To stably form a zinc oxide thin film having an excellent adhesion property and uniformity on a long-sized conductive substrate by supplying a current between the long-sized conductive substrate as a cathode and an anode in an aq. soln. contg. nitric acid ions, zinc ions and carbohydrate. SOLUTION: The aq. soln. 1102 of 50 to 95 deg.C contg. the nitric acid ions and zinc ions at a concn. of 0.001 to 1mol/l by zinc nitrate, etc., and further contg. the carbohydrate, such as grape sugar, at a ratio of 0.001 to 300g/l is housed into a corrosion resistant vessel 1101 and is spouted and circulated in a water flow direction 1115 by a nozzle 1112. The long-sized conductive substrate 1103 as the cathode is moved at a high speed by a nonconductive belt 1110 in a direction 1116 reverse from the water flow direction 1115. Voltage is impressed between these 1103 and the anode 1104 by a power source 105 and the current is supplied at a current density of 10mA/dm to 10A/dm by adjusting the flow velocity and ion concn., respectively, of the aq. soln. 1102. The zinc oxide thin films having excellent characteristics are thus formed on the surface of the substrate 1103.