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公开(公告)号：JPH11328658A
公开(公告)日：1999-11-30
申请号：JP37064798
申请日：1998-12-25
Applicant: SONY CORP
Inventor： KOBAYASHI TAKESHI , KISHII NORIYUKI , KAMEI TAKAHIRO , YAMADA YUKARI , YATAGAI HIROSHI , MORI TAKAO , KURIHARA KENICHI , IWAMOTO HIROSHI , MATSUZAWA NOBUYUKI , KAWANA TAKAHIRO
IPC: G11B5/64 , C10M105/40 , C10M105/54 , C10N40/18 , G11B5/71 , G11B5/72 , G11B5/725
Abstract: PROBLEM TO BE SOLVED: To maintain superior lubrication properties under various kinds of use conditions and secure superior travel efficiency, abrasion resistance and durability by forming a thin film layer on a non-magnetic supporting body which includes at least a magnetic layer, and including a predetermined monoester monocarboxylic acid in the thin film layer. SOLUTION: A metallic magnetic film 3 is formed as a continuous film on a non-magnetic supporting body 2 by a physical vapor deposition(PVD) of a ferromagnetic metallic material such as a Co-Cr alloy, etc. A protecting film 4 is formed and coated on the metallic magnetic film 3 by a chemical vapor phase deposition(CVD) o the like of carbon. A lubricant layer 5 contains a monoester monocarboxylic acid expressed by a formula as a lubricant. The lubricant dissolved in a hydrocarbon-based solvent is applied on the protecting film 4, thereby forming the lubricant layer. R1 is a fatty acid alkyl group or fatty acid alkenyl group and R2 is any one of a phloroalkyl group, a phloroalkenyl group and an aliphatic alkenyl group.
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62.发明专利
公开(公告)号：JPH1139645A
公开(公告)日：1999-02-12
申请号：JP19284397
申请日：1997-07-17
Applicant: SONY CORP
Inventor： KISHII NORIYUKI , KAMEI TAKAHIRO , KURIHARA KENICHI , KOBAYASHI TAKESHI , IWAMOTO HIROSHI , MATSUZAWA NOBUYUKI
IPC: C09K19/06 , C09K19/32 , C09K19/34 , C10M105/34 , C10M105/56 , C10M105/70 , C10N40/18 , C10N50/10 , G11B5/64 , G11B5/71 , G11B5/72 , G11B5/725 , G11B5/735 , G11B5/738
Abstract: PROBLEM TO BE SOLVED: To provide a recording medium excellent in continuous sliding durability, low in tackiness and high in meniscus force by incorporating liquid crystal molecules having a specified monocyclic structure as a lubricant into the outermost layer. SOLUTION: The outermost layer of a magnetic recording medium having magnetic layers on a nonmagnetic supporting body contains a liquid crystal molecule lubricant having a bicyclic structure expressed by formula I, formula II, or formula III. In the formulae, X is an atomic groups having a chain structure, L, R are cyano groups, nitro groups, aldehyde groups, hydroxyl groups, amino groups, amide groups, ether groups, carbonyl groups, carboxyl groups, oxycarboxyl groups, halogen groups, alkyl groups, allyl groups, hydroxyimino groups, or allyl groups, alkyl groups, oxygarboxyl groups, carboxyl groups, carbonyl groups, ether groups, amide groups and amino groups with substitution of groups above described. The lubricant is applied on the surface of a magnetic material or added in the magnetic layer.
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公开(公告)号：JPH07115012A
公开(公告)日：1995-05-02
申请号：JP26129893
申请日：1993-10-19
Applicant: SONY CORP
Inventor： ATA MASAFUMI , MATSUZAWA NOBUYUKI , KIJIMA YASUNORI , IMOTO HIROSHI
Abstract: PURPOSE:To make it possible to manufacture metal contained fullerene with high efficiency by using an electrode available from the mixing and sintering of metals with easily graphitized carbon as a positive electrode and arc discharging the electrode inside a vacuum chamber and separating fullerene from the deposits. CONSTITUTION:A hole is bored in the center of a high purity graphite rod 3a and metal containing-carbon powder 3b is put into the hole, thereby producing a positive electrode 3 while the high purity graphite rod is used as a negative electrode. The positive and negative electrode 2 and 3 are installed in a chamber 1. Then, DC current is made to flow between the electrodes 2 and 3 from a DC power source 6 while the air in the chamber is being replaced with an inert gas. Then, arc discharging is produced between the electrodes 2 and 3 where soot called fullerene attaches to an inner wall 1a of the water-colled chamber. The removed soot is put into a quartz tube 8. While the inside the tube is being evacuated into high vacuum, the temperature is increased by using a heating device 9. A substance 10 sublimated from a filler 7 is cooled at the upper part of the quarts tube 8 and deposited. This construction makes it possible to provide metal lanthanum containing fullerene which is thermally stabilized.
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公开(公告)号：JPH06268200A
公开(公告)日：1994-09-22
申请号：JP21677393
申请日：1993-08-31
Applicant: SONY CORP
Inventor： TAKAHASHI NOBORU , DOTSUKU HENRIKU , ATA MASAFUMI , MATSUZAWA NOBUYUKI
Abstract: PURPOSE:To provide an organic semiconductive thin film with high conductivity, high transparency, and high mechanical strength, together with its manufacturing method. CONSTITUTION:An organic semiconductive thin film that is formed in plasma by polymerizing a spherical carbon compound, the so-called fullerene, is disclosed in this invention. The spheroidal carbon is given by Cn (n) is an integer out of 60, 70, 76, 84, or the like such that carbons can constitute a spherical compound). The organic semiconductive thin film has a molecular formula, (Cn+j)m ((j) is an integer ranging from -10 to 10, and (m) is a positive integer) and includes partly a Cn polymer structure, in which cyclohexatrienyl sites are joined through a cyclobutane ring in 1,2-cyclic additional combination. The Cn polymer structure is distributed over a thin film in an amorphous state. In this way, the organic conductive film is formed by plasma-polymerization using the fullerene as a sublimation source.
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公开(公告)号：JPH06211511A
公开(公告)日：1994-08-02
申请号：JP2209193
申请日：1993-01-14
Applicant: SONY CORP
Inventor： ATA MASAFUMI , MATSUZAWA NOBUYUKI , KIJIMA YASUNORI , IMOTO HIROSHI
Abstract: PURPOSE:To form a carbon hyperfine particle by allowing a carbonaceous material containing the carbon hyperfine particle having a concentric spherical graphite structure to be stuck to a counter electrode. CONSTITUTION:A pair of the high purity graphite made counter electrodes 12, 13 several mm to 50mm in diameter is arranged at 0.2-1.5cm interval in a water cooled vacuum chamber 11 and is arc-discharged in the presence of an inert gas such as He of 10-500Torr after evacuating. Carbon of the structural material of the positive electrode 13 is vaporized and is made plasma to form a soot like adhered material 15 on the inside wall surface of the chamber 11. The adhered material 15 is a spherical carbonaceous material containing a fullerene expressed by Cn ((n) is 60, 70, 76, 84). A carbon added body 16 is deposited over 2-3cm from the tip of the negative electrode 12 by about 20% of the negative electrode volume on the negative electrode 12 at the same time as producing the fullerene. The carbon hyperfine particle of nm order size having the concentric spherical graphite structure is obtained by disentangling the carbon added body with an ultrasonic vibration device or the like.
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Patent Agency Ranking66.发明专利
公开(公告)号：JP2011210979A
公开(公告)日：2011-10-20
申请号：JP2010077731
申请日：2010-03-30
Inventor： TAKEMURA ICHIRO , MITA ISAO , MATSUI ERIKO , MATSUZAWA NOBUYUKI
IPC: H01L21/027 , G03F7/40
CPC classification number: G03F7/40 , G03F7/0392 , G03F7/2024
Abstract: PROBLEM TO BE SOLVED: To provide a method of modifying a pattern of a chemically-photosensitized resist which can improve solvent and exposure/development resistances in positive chemically-photosensitized resist pattern, a modifier for the chemically-photosensitized resist pattern used in the modifying step, and also to provide a modified resist pattern structure.SOLUTION: A modifier aqueous solution 3 including an water-soluble cross-linking agent penetrating into a pattern 2 of a positive chemically-photosensitized resist and of causing cross-linking reaction with the resin component by acid action and also including penetration accelerator for promoting penetration of the cross-linking agent, the cross-linking agent and the penetration accelerator being dissolved in water; is applied onto the resist pattern 2 containing a photo acid generator and a resin component whose solubility is changed by acid action; the cross-linking agent is penetrated into the resist pattern 2, and then excessive cross-linking agent is removed. Next, a resist pattern 5 is irradiated with ultraviolet light to generate acid, heated to cause the resin component to react with the cross-linking agent by acid action and to cause a hardened layer 6 to be formed on at least a surface layer 4 of the resist pattern 2.
Abstract translation: 要解决的问题：提供一种改变化学光敏抗蚀剂的图案的方法，其可以改善正化学光敏化抗蚀剂图案中的溶剂和曝光/显影电阻，用于修饰步骤中使用的化学光敏抗蚀剂图案的改性剂 并且还提供改性的抗蚀剂图案结构。溶液：改性剂水溶液3，其包含渗透正性化学光敏抗蚀剂的图案2并引起与树脂成分的交联反应的水溶性交联剂 通过酸作用，还包括促进交联剂渗透的渗透促进剂，交联剂和渗透促进剂溶于水中; 施加到含有光酸产生剂的抗蚀剂图案2和通过酸作用改变其溶解度的树脂组分; 交联剂渗透到抗蚀剂图案2中，然后除去过量的交联剂。 接着，用紫外线照射抗蚀剂图案5，生成酸，加热使树脂成分与酸性作用的交联剂反应，使至少在表面层4上形成硬化层6 抗蚀剂图案2。
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公开(公告)号：JP2007220844A
公开(公告)日：2007-08-30
申请号：JP2006038802
申请日：2006-02-16
Inventor： MATSUZAWA NOBUYUKI , BOONTARIKA THUNNAKART , OZAWA KEN , KUROBE TOSHIHIRO , WATANABE YOKO
IPC: H01L21/027 , G03F7/11 , G03F7/20 , H01L21/768 , H01L23/522
Abstract: PROBLEM TO BE SOLVED: To provide an antireflection film capable of sufficiently reducing reflectance on an interface between a resist layer and a silicon semiconductor substrate, even if exposure light is made incident obliquely by one layer in a liquid immersion lithography technique, and to provide an exposure method. SOLUTION: The double layer structure antireflection film is used in exposing a resist layer in an exposure system having a wavelength of 190-195 nm and having a numerical aperture of 0.93-1.0, and is formed between the resist layer and a silicon nitride film formed on the surface of the silicon semiconductor substrate. When complex refractive indexes N 1 , N 2 of upper layer and lower layer constituting the antireflection film are expressed by the expressions; N 1 =n 1 -k 1 i, N 2 =n 2 -k 2 i, film thicknesses of the upper layer and lower layer are d 1 , d 2 and a predetermined combination is selected as the combination of values [n 10 , k 10 , d 10 , n 20 , k 20 , d 20 ], n 1 , k 1 , d 1 , n 2 , k 2 , d 2 satisfy the following relation: ä(n 1 -n 10 )/(n 1m -n 10 )} 2 +ä(k 1 -k 10 )/(k 1m -k 10 )} 2 +ä(d 1 -d 10 )/(d 1m -d 10 )} 2 +ä(n 2 -n 20 )/(n 2m -n 20 )} 2 +ä(k 2 -k 20 )/(k 2m -k 20 )} 2 +ä(d 2 -d 20 )/(d 2m -d 20 )} 2 ≤1. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation: 要解决的问题：即使在液浸式光刻技术中使曝光光倾斜地入射一层，提供能够充分降低抗蚀剂层和硅半导体衬底之间的界面上的反射率的抗反射膜，以及 提供曝光方法。 解决方案：双层结构抗反射膜用于在波长为190-195nm并且具有0.93-1.0的数值孔径的曝光系统中曝光抗蚀剂层，并且形成在抗蚀剂层和硅之间 形成在硅半导体衬底的表面上的氮化物膜。 当复合折射率N
1 时，构成防反射膜的上层和下层的N 2 由表达式表示; N 1 = n 1 i，N 2 = n 2 -k 2，上层和下层的膜厚度为d SB> 1 ，d 2 ，并且选择预定的组合作为组合 的值[n 10 ，k 10 ，d 10 ，20 SB>，d 20 ，n 1 ，k 1 ，d 1 / SB>，k 2 ，d 2 满足以下关系：ä（n 1 -n 10 ） /（N 1M -n 10 ）} 2 + A（K 1 -k 10 < / SB>）/（K 1M -k 10 ）} 2 + A（D 1 -d < SB> 10 ）/（D 1M -d 10 ）} 2 + A（N 2 -n 20 ）/（N 2米 -n 20 ）} 2 + A（K 2 -k 20 ）/（K 2米 -k 20 ）} 2 + A（ ð 2 -d 20 ）/（D 2米 -d 20 ）} 2 ≤1。 版权所有（C）2007，JPO＆INPIT -
公开(公告)号：JP2007219292A
公开(公告)日：2007-08-30
申请号：JP2006041209
申请日：2006-02-17
Applicant: Sony Corp , Tokyo Ohka Kogyo Co Ltd , ソニー株式会社 , 東京応化工業株式会社
Inventor： MATSUZAWA NOBUYUKI , ANDO ATSUHIRO , MATSUI ERIKO , YAMAGUCHI YUKO , KUGIMIYA KATSUNAO , TATSUMI TETSUYA , SALAM KAZI , IWAI TAKESHI , IRIE MAKIKO
IPC: G03F7/40 , G03F7/039 , G03F7/11 , H01L21/027
CPC classification number: H01L21/0273 , G03F7/40 , H01L21/28123 , H01L21/32139
Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method and a method for producing a semiconductor device by which variation in line width of a pattern of a layer to be etched is reduced.
SOLUTION: The pattern forming method and the method for producing a semiconductor device include: a first step of forming a resist pattern 15' containing a polymeric material having a lactone group-containing skeleton on a gate electrode film 12 disposed on a substrate 11; a second step of plasma-treating the resist pattern 15' with a hydrogen-containing gas so as to lower the glass transition temperature or softening point of the resist pattern 15'; and a third step of forming a gate electrode by transferring the plasma-treated resist pattern 15' to the gate electrode film 12 by etching.
COPYRIGHT: (C)2007,JPO&INPITAbstract translation: 要解决的问题：提供一种图案形成方法和用于制造半导体器件的方法，通过该半导体器件，待蚀刻层的图案的线宽的变化减小。 解决方案：图案形成方法和半导体器件的制造方法包括：第一步骤，在设置在基板上的栅电极膜12上形成含有含内酯基骨架的聚合材料的抗蚀剂图案15' 11; 用含氢气体等离子体处理抗蚀剂图案15'以降低抗蚀剂图案15'的玻璃化转变温度或软化点的第二步骤; 以及通过蚀刻将等离子体处理的抗蚀剂图案15'转移到栅电极膜12来形成栅电极的第三步骤。 版权所有（C）2007，JPO＆INPIT
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公开(公告)号：JP2005258118A
公开(公告)日：2005-09-22
申请号：JP2004070192
申请日：2004-03-12
Applicant: Sony Corp , Sony Internatl (Europe) Gmbh , ソニーインターナショナル(ヨーロッパ)ゲーエムベーハー , ソニー株式会社
Inventor： MATSUI ERIKO , WATANABE HARUO , MATSUZAWA NOBUYUKI , YASUDA AKIO , MIZUTANI TADASHI , YAMAUCHI KIKEI , KITAGAWA SUSUMU
Abstract: PROBLEM TO BE SOLVED: To provide an area modulating element whose function is controlled with an electric field on the basis of new principles. SOLUTION: When an electric field is applied in parallel to (vertically on Figure) to the paper surface by using a functional molecule element, which develops a function by varying a conformation of a nearly disk-like organic metal complex molecule 1, the structure of the organic metal complex molecule changes and its occupation area varies. Thus, the molecule structure is variously changed by controlling the applied electric field to vary the occupation area of the molecule, thereby obtaining a functional device such as an optical screen and an optical screen. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract translation: 要解决的问题：提供一种基于新原理利用电场来控制其功能的面积调制元件。 解决方案：当通过使用通过改变几乎盘状的有机金属络合物分子1的构象而发挥功能的功能分子元素将平行于（垂直于图）的电场施加到纸表面时， 有机金属络合物分子的结构发生变化，其占地面积变化。 因此，通过控制施加的电场来改变分子的占用面积，分子结构被不同地改变，从而获得诸如光学屏幕和光学屏幕的功能装置。 版权所有（C）2005，JPO＆NCIPI
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公开(公告)号：JP2004221553A
公开(公告)日：2004-08-05
申请号：JP2003418815
申请日：2003-12-17
Inventor： MATSUI ERIKO , HARNACK OLIVER , MATSUZAWA NOBUYUKI , YASUDA AKIO
Abstract: PROBLEM TO BE SOLVED: To provide a functional molecular element whose function is controlled by an electric field based on a new principle. SOLUTION: To a linear or filmy standard molecule 2 having a conjugated system and displaying electrical conductivity, a Lewis base molecule 14 having a positive dielectric constant anisotropy or having a dipole moment in a transverse direction of the molecule is arranged in the shape of a pendant through the aid of a metal ion 3 functional as a Lewis acid, thus forming a functional molecular element 1 that demonstrates its function while a conformation changes due to application of an electric field. The conductive standard molecule 2 and the Lewis base molecule 14 form the metal ion 3 and complex 6. For example, if the electric field is applied in a direction orthogonal to the paper as shown in figure (b), the Lewis base molecule 14 performs an oscillating motion of 90 o with the vertical direction of the paper as an axis. Further, if the electric field is applied in a vertical direction of the paper as shown in figure (c), it performs a seesaw movement with a direction orthogonal to the paper as an axis, switching the electric conductivity of the conductive standard molecule 2. COPYRIGHT: (C)2004,JPO&NCIPI
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