Abstract:
PROBLEM TO BE SOLVED: To provide a field effect transistor which serves as an RF switch having low distortions and low loss, by forming an electrode for applying positive voltage in the element isolation region. SOLUTION: In a semiconductor device 1, a field effect transistor 5, utilizing heterojunction is formed on an element forming area sectioned by element isolation regions 25 formed on a semiconductor substrate 10 provided with semiconductor layers, including a semiconductor layer having heretojunction and laminated on the semiconductor substrate 10. The element isolation region 25 consists of a layer into which conductive impurity is introduced, and an electrode 28 is formed on the element isolation region 25 for applying positive voltage to the surface of at least a part of the element isolation region 25 on the periphery of the field effect transistor 5. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a technology whereby communicating apparatuses can mutually authenticate with each other. SOLUTION: An apparatus A generates authentication data 1 on the basis of a random number RanA and transmits the data 1 to an apparatus B. The apparatus B encrypts the random number RanA of the authentication data 1 by using a plurality of encryption algorithms to generate authentication data 2 and transmits the authentication data 2 to the apparatus A. The apparatus A decrypts the authentication data 2 by a decryption method corresponding to a plurality of the encryption algorithms and authenticates the apparatus B when obtaining the random number RanA. The apparatus B similarly authenticates the apparatus A to attain mutual authentication between the apparatuses A and B. The technology can be applied to contactless IC cards. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To discretely improve the in-plane distribution of a threshold voltage to a semiconductor substrate of an epitaxial-grown semi-fabricated product. SOLUTION: When a p-gate HFET is prepared by conducting a vapor-phase Zn diffusion to an epitaxial wafer, the diffusion depth of Zn is controlled at a change in a temperature of the diffusion coefficient of Zn to a compound semiconductor wafer such as GaAs, AlGaAs or the like. A Zn diffusion speed to Al GaAs is increased intentionally by lowering the ambient temperature of the wafer, and the diffusion depth to AlGaAs only of a peripheral section is deepened. The diffusion depth of Zn is controlled by controlling the partial pressure of the Zn at difference of a Zn partial pressure in the case of the diffusion of the diffusion speed of Zn to AlGaAs or the like. The substantial partial pressure of the peripheral section of the wafer is raised by increasing the flow rate of Zn gas in the peripheral section of the wafer.
Abstract:
PROBLEM TO BE SOLVED: To provide a manufacturing method for a junction gate field effect transistor having a gate electrode which is free of a parasitic capacitance. SOLUTION: A metal film, for example a laminated metallic film 36 of 20 nm thickness Ti film and 200 nm thickness Au film is deposited, for example by means of an electron beam irradiation. Then the metal film, for example 450 nm Au layer 38, is deposited on the Ti/Au laminate film 36 by means of electrolytic plating process, and a gate opening 34 is embedded. The Ti/Au film 36 and the Au layer 38 on an SiN film 32 is etched back over its entirety by means of ion milling process, and a gate electrode 40 is formed as shown in Fig. (f) only on the gateopening 34 except for the metal layers 36, 38. As a result, the gate electrode comprising metal layers with the gate opening completely embedded and without a tapered portion as in the conventional gate electrode structure. No tapered portion is required due to sufficient space available for connecting to the wiring of the gate electride, because the gate opening 34 is embedded.
Abstract:
PROBLEM TO BE SOLVED: To provide a product easy of a single positive power source operation and superior in linearity of mutual conductance and source-gate capacitance with respect to the gate voltage. SOLUTION: On a substrate 11 are laminated a second AlGaAs barrier layer 13, an InGaAs channel layer 14 and a first AlGaAs barrier layer 15 consisting of a carrier supply region 15a containing an n-type impurity, a high resistance region 15b containing no impurity and p-type low resistance region 15c containing p-type impurity. The latter region 15c is embedded in the high resistance region 15b by diffusing the impurity to contact a gate electrode 20. When a positive voltage is applied to the gate electrode 20, a carrier depleted region disappears in the channel layer 14 and no parasitic resistance component remains. The low resistance region 15c may be formed through the epitaxial growth.
Abstract:
PURPOSE:To downsize the whole of a device, and to facilitate and secure the operation by sliding a first operating element and a second operating element integrally with each other. CONSTITUTION:As the first operation, an operating part 3A of a recording stand-by operating element 3 is pushed in the direction A to push down an operating part 4B of a plate spring member 4 in the direction C. The operating part 4B thereby abuts on a working piece 5A of a recording stand-by switch 5 to push the operating piece 5A. The switch 5 is held in this condition. As the second operation, in the condition that the operating element 3 is pushed in the direction A, a recording operating element 6 is slid in the direction B. The plate spring member 4 connected to the operating element 6 is thereby moved in the direction B. With this movement, a connecting plate 8 connected to the main surface part 4A of the plate spring member 4 is moved in the direction D. With this movement, a coil spring 10 fitted to the connecting plate 8 is elastically displaced, and an operating piece 8A of the connecting plate 8 pushes a working piece 7a of a recording switch 7 to operate the recording switch 7 for recording.
Abstract:
PROBLEM TO BE SOLVED: To provide a biological signal measuring device capable of measuring long-time waves generated in the head at the same level as when short-time waves are measured.SOLUTION: The biological signal measuring device to be used for measuring biological signals in the head includes: a forehead abutment part 350 to abut on the forehead center; an occiput abutment part 340 to abut on the occiput; and a supporting body that is supported by the head in such a manner to hold the head in the anterior and posterior direction with the forehead abutment part 350 and the occiput abutment part 340 as ends.
Abstract:
PROBLEM TO BE SOLVED: To prevent a casing and a cover from being damaged or broken when they are bent while reducing shear force generated at the time of bending to secure excellent flexibility.SOLUTION: A mounting structure of a casing comprises: a casing formed of an elastically deformable material having a coupling surface part and a pair of base surface parts; and a cover mounted to the casing and having flexibility. The pair of base surface parts can be opened and closed with the coupling surface part as a fulcrum portion; a plurality of opening holes opened on the cover side are formed in the base surface parts; the cover is mounted to the casing by a first adhesive having a tacky property and a second adhesive of a different kind from the first adhesive; the first adhesive is filled in some of the plurality of opening holes; at least one of intervals of filling positions of the first adhesive in the arrangement direction in which the pair of base surface parts are arranged is different from others; and the interval between the filling positions of the first adhesive is the same or becomes smaller as the rigidity of the base surface part becomes smaller in the arrangement direction.
Abstract:
PROBLEM TO BE SOLVED: To provide a positive mutual authentication system which improves the processing efficiency of an apparatus and conforms to International Standards. SOLUTION: Data M1 is data for 16 bytes in a random number Ra generated by a communication partner, and data M2 is data for 16 bytes obtained by excluding the data M1 in the random number Ra. Data M3 is a random number Rb generated by itself. When the data M3 obtained by decoding is determined to be equal to the random number Rb generated by itself and when data M1 obtained corresponding to data C1 is determined to be equal to data M1 obtained corresponding to data C4, the communication partner is authenticated to be a rightful apparatus. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To change display contents of a display device according to a state of a bent part of a display device. SOLUTION: In an electronic book 100, a part or the whole of its case is flexible. The electronic book 100 includes a display section 105, a position sensor 105a and bending sensor 105c for detecting a bent part of the electronic book 100, and a display change section 465 for changing the display contents of the display section 105 based on the detection results of the position sensor 105a and bending sensor 105c. COPYRIGHT: (C)2010,JPO&INPIT