Semiconductor device and method for manufacturing the same
    61.
    发明专利
    Semiconductor device and method for manufacturing the same 审中-公开
    半导体器件及其制造方法

    公开(公告)号:JP2006196802A

    公开(公告)日:2006-07-27

    申请号:JP2005008551

    申请日:2005-01-17

    CPC classification number: H01L29/66462 H01L29/0692 H01L29/7785

    Abstract: PROBLEM TO BE SOLVED: To provide a field effect transistor which serves as an RF switch having low distortions and low loss, by forming an electrode for applying positive voltage in the element isolation region. SOLUTION: In a semiconductor device 1, a field effect transistor 5, utilizing heterojunction is formed on an element forming area sectioned by element isolation regions 25 formed on a semiconductor substrate 10 provided with semiconductor layers, including a semiconductor layer having heretojunction and laminated on the semiconductor substrate 10. The element isolation region 25 consists of a layer into which conductive impurity is introduced, and an electrode 28 is formed on the element isolation region 25 for applying positive voltage to the surface of at least a part of the element isolation region 25 on the periphery of the field effect transistor 5. COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题:通过在元件隔离区域中形成用于施加正电压的电极来提供用作具有低失真和低损耗的RF开关的场效应晶体管。 解决方案:在半导体器件1中,在由形成在设置有半导体层的半导体衬底10上的元件隔离区域25所形成的元件形成区域上形成利用异质结的场效应晶体管5,该半导体衬底10包括具有阴极的半导体层, 层叠在半导体衬底10上。元件隔离区25由引入导电杂质的层组成,电极28形成在元件隔离区25上,用于向元件的至少一部分的表面施加正电压 隔离区域25在场效应晶体管5的外围。版权所有(C)2006,JPO&NCIPI

    Information processing apparatus and method, program, and recording medium
    62.
    发明专利
    Information processing apparatus and method, program, and recording medium 审中-公开
    信息处理装置和方法,程序和记录介质

    公开(公告)号:JP2006080642A

    公开(公告)日:2006-03-23

    申请号:JP2004259857

    申请日:2004-09-07

    CPC classification number: G06F21/445 G06F2221/2129

    Abstract: PROBLEM TO BE SOLVED: To provide a technology whereby communicating apparatuses can mutually authenticate with each other. SOLUTION: An apparatus A generates authentication data 1 on the basis of a random number RanA and transmits the data 1 to an apparatus B. The apparatus B encrypts the random number RanA of the authentication data 1 by using a plurality of encryption algorithms to generate authentication data 2 and transmits the authentication data 2 to the apparatus A. The apparatus A decrypts the authentication data 2 by a decryption method corresponding to a plurality of the encryption algorithms and authenticates the apparatus B when obtaining the random number RanA. The apparatus B similarly authenticates the apparatus A to attain mutual authentication between the apparatuses A and B. The technology can be applied to contactless IC cards. COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题:提供通信装置可以相互认证的技术。 解决方案:设备A基于随机数RanA生成认证数据1,并将数据1发送到设备B.设备B通过使用多个加密算法加密认证数据1的随机数RanA 生成认证数据2并将认证数据2发送给设备A.设备A通过与多个加密算法相对应的解密方法对认证数据2进行解密,并且在获得随机数RanA时认证设备B. 装置B类似地认证装置A以实现装置A和B之间的相互认证。该技术可以应用于非接触式IC卡。 版权所有(C)2006,JPO&NCIPI

    MANUFACTURING METHOD FOR SEMICONDUCTOR

    公开(公告)号:JP2002217208A

    公开(公告)日:2002-08-02

    申请号:JP2001007374

    申请日:2001-01-16

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To discretely improve the in-plane distribution of a threshold voltage to a semiconductor substrate of an epitaxial-grown semi-fabricated product. SOLUTION: When a p-gate HFET is prepared by conducting a vapor-phase Zn diffusion to an epitaxial wafer, the diffusion depth of Zn is controlled at a change in a temperature of the diffusion coefficient of Zn to a compound semiconductor wafer such as GaAs, AlGaAs or the like. A Zn diffusion speed to Al GaAs is increased intentionally by lowering the ambient temperature of the wafer, and the diffusion depth to AlGaAs only of a peripheral section is deepened. The diffusion depth of Zn is controlled by controlling the partial pressure of the Zn at difference of a Zn partial pressure in the case of the diffusion of the diffusion speed of Zn to AlGaAs or the like. The substantial partial pressure of the peripheral section of the wafer is raised by increasing the flow rate of Zn gas in the peripheral section of the wafer.

    JUNCTION GATE FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF

    公开(公告)号:JP2001144107A

    公开(公告)日:2001-05-25

    申请号:JP32430199

    申请日:1999-11-15

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method for a junction gate field effect transistor having a gate electrode which is free of a parasitic capacitance. SOLUTION: A metal film, for example a laminated metallic film 36 of 20 nm thickness Ti film and 200 nm thickness Au film is deposited, for example by means of an electron beam irradiation. Then the metal film, for example 450 nm Au layer 38, is deposited on the Ti/Au laminate film 36 by means of electrolytic plating process, and a gate opening 34 is embedded. The Ti/Au film 36 and the Au layer 38 on an SiN film 32 is etched back over its entirety by means of ion milling process, and a gate electrode 40 is formed as shown in Fig. (f) only on the gateopening 34 except for the metal layers 36, 38. As a result, the gate electrode comprising metal layers with the gate opening completely embedded and without a tapered portion as in the conventional gate electrode structure. No tapered portion is required due to sufficient space available for connecting to the wiring of the gate electride, because the gate opening 34 is embedded.

    SEMICONDUCTOR DEVICE, MANUFACTURE THEREOF, AND RADIO COMMUNICATION APPARATUS

    公开(公告)号:JPH11150264A

    公开(公告)日:1999-06-02

    申请号:JP25898998

    申请日:1998-09-11

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a product easy of a single positive power source operation and superior in linearity of mutual conductance and source-gate capacitance with respect to the gate voltage. SOLUTION: On a substrate 11 are laminated a second AlGaAs barrier layer 13, an InGaAs channel layer 14 and a first AlGaAs barrier layer 15 consisting of a carrier supply region 15a containing an n-type impurity, a high resistance region 15b containing no impurity and p-type low resistance region 15c containing p-type impurity. The latter region 15c is embedded in the high resistance region 15b by diffusing the impurity to contact a gate electrode 20. When a positive voltage is applied to the gate electrode 20, a carrier depleted region disappears in the channel layer 14 and no parasitic resistance component remains. The low resistance region 15c may be formed through the epitaxial growth.

    SWITCH DEVICE
    66.
    发明专利

    公开(公告)号:JPH07335081A

    公开(公告)日:1995-12-22

    申请号:JP12789194

    申请日:1994-06-09

    Applicant: SONY CORP

    Abstract: PURPOSE:To downsize the whole of a device, and to facilitate and secure the operation by sliding a first operating element and a second operating element integrally with each other. CONSTITUTION:As the first operation, an operating part 3A of a recording stand-by operating element 3 is pushed in the direction A to push down an operating part 4B of a plate spring member 4 in the direction C. The operating part 4B thereby abuts on a working piece 5A of a recording stand-by switch 5 to push the operating piece 5A. The switch 5 is held in this condition. As the second operation, in the condition that the operating element 3 is pushed in the direction A, a recording operating element 6 is slid in the direction B. The plate spring member 4 connected to the operating element 6 is thereby moved in the direction B. With this movement, a connecting plate 8 connected to the main surface part 4A of the plate spring member 4 is moved in the direction D. With this movement, a coil spring 10 fitted to the connecting plate 8 is elastically displaced, and an operating piece 8A of the connecting plate 8 pushes a working piece 7a of a recording switch 7 to operate the recording switch 7 for recording.

    Biological signal measuring device
    67.
    发明专利
    Biological signal measuring device 有权
    生物信号测量装置

    公开(公告)号:JP2014176748A

    公开(公告)日:2014-09-25

    申请号:JP2014114055

    申请日:2014-06-02

    Abstract: PROBLEM TO BE SOLVED: To provide a biological signal measuring device capable of measuring long-time waves generated in the head at the same level as when short-time waves are measured.SOLUTION: The biological signal measuring device to be used for measuring biological signals in the head includes: a forehead abutment part 350 to abut on the forehead center; an occiput abutment part 340 to abut on the occiput; and a supporting body that is supported by the head in such a manner to hold the head in the anterior and posterior direction with the forehead abutment part 350 and the occiput abutment part 340 as ends.

    Abstract translation: 要解决的问题:提供一种生物信号测量装置,其能够测量与测量短时间波时相同水平的头部中产生的长时间波。解决方案:用于测量生物信号的生物信号测量装置 头部包括:抵靠前额头部中心的前额定位部350; 枕骨抵靠部340抵接在枕骨上; 以及支撑体,其以头部抵接部350和枕骨抵接部340为端部以这样的方式将头部保持在前后方向上被支撑。

    Mounting structure of casing and display device
    68.
    发明专利
    Mounting structure of casing and display device 审中-公开
    安装和显示设备的安装结构

    公开(公告)号:JP2013175549A

    公开(公告)日:2013-09-05

    申请号:JP2012038528

    申请日:2012-02-24

    Abstract: PROBLEM TO BE SOLVED: To prevent a casing and a cover from being damaged or broken when they are bent while reducing shear force generated at the time of bending to secure excellent flexibility.SOLUTION: A mounting structure of a casing comprises: a casing formed of an elastically deformable material having a coupling surface part and a pair of base surface parts; and a cover mounted to the casing and having flexibility. The pair of base surface parts can be opened and closed with the coupling surface part as a fulcrum portion; a plurality of opening holes opened on the cover side are formed in the base surface parts; the cover is mounted to the casing by a first adhesive having a tacky property and a second adhesive of a different kind from the first adhesive; the first adhesive is filled in some of the plurality of opening holes; at least one of intervals of filling positions of the first adhesive in the arrangement direction in which the pair of base surface parts are arranged is different from others; and the interval between the filling positions of the first adhesive is the same or becomes smaller as the rigidity of the base surface part becomes smaller in the arrangement direction.

    Abstract translation: 要解决的问题:为了防止壳体和盖在弯曲时被损坏或破坏,同时减少弯曲时产生的剪切力以确保优异的柔性。解决方案:壳体的安装结构包括:壳体,其由 具有耦合表面部分和一对基面部分的可弹性变形的材料; 以及安装到壳体并具有柔性的盖。 一对基面部分可以以联接表面部分作为支点部分打开和关闭; 在基面部形成有在盖侧开放的多个开孔; 所述盖通过具有粘性的第一粘合剂和与所述第一粘合剂不同种类的第二粘合剂安装到所述壳体; 第一粘合剂填充在多个开孔中的一些中; 第一粘合剂在布置方向上的填充位置的间隔中的至少一个不同于另一个; 并且第一粘合剂的填充位置之间的间隔相同或变小,因为基面部的刚性在排列方向上变小。

    Authentication device and method, and communication apparatus and method
    69.
    发明专利
    Authentication device and method, and communication apparatus and method 审中-公开
    认证装置和方法,以及通信装置和方法

    公开(公告)号:JP2011066636A

    公开(公告)日:2011-03-31

    申请号:JP2009214766

    申请日:2009-09-16

    Abstract: PROBLEM TO BE SOLVED: To provide a positive mutual authentication system which improves the processing efficiency of an apparatus and conforms to International Standards. SOLUTION: Data M1 is data for 16 bytes in a random number Ra generated by a communication partner, and data M2 is data for 16 bytes obtained by excluding the data M1 in the random number Ra. Data M3 is a random number Rb generated by itself. When the data M3 obtained by decoding is determined to be equal to the random number Rb generated by itself and when data M1 obtained corresponding to data C1 is determined to be equal to data M1 obtained corresponding to data C4, the communication partner is authenticated to be a rightful apparatus. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种提高设备的处理效率并符合国际标准的正相互认证系统。 解决方案:数据M1是由通信对方产生的随机数Ra中的16个字节的数据,数据M2是通过排除随机数Ra中的数据M1获得的16个字节的数据。 数据M3是由其自身产生的随机数Rb。 当通过解码获得的数据M3被确定为等于其自身产生的随机数Rb时,并且当与数据C1相对应地获得的数据M1被确定为等于对应于数据C4获得的数据M1时,通信伙伴被认证为 合法的装置。 版权所有(C)2011,JPO&INPIT

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