公开(公告)号：FR2823596A1

公开(公告)日：2002-10-18

申请号：FR0105129

申请日：2001-04-13

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： ASPAR BERNARD ,  MORICEAU HUBERT ,  ZUSSY MARC ,  RAYSSAC OLIVIER

IPC: H01L21/02 ,  H01L21/68 ,  H01L21/762 ,  H01L21/78 ,  H01L27/12 ,  H01L21/30 ,  H01L23/32

Abstract: The preparation of a thin layer includes the production of an interface between a layer (13, 14) destined to make up a part of the thin layer and a substrate (11, 12). An interface is formed with at least a first zone (Z1) having a first level of mechanical strength and a second zone (Z2) having a second level of mechanical strength essentially greater than the first level of mechanical strength. An Independent claim is also included for an assembly comprising a thin layer on a substrate connected by an interface incorporating two zones with different levels of mechanical strength.

公开(公告)号：FR2784800A1

公开(公告)日：2000-04-21

申请号：FR9813136

申请日：1998-10-20

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： JOLY JEAN PIERRE ,  ASPAR BERNARD ,  BIASSE BEATRICE ,  ZUSSY MARC

IPC: H01L21/762 ,  H01L21/822 ,  H01L21/84 ,  H01L21/98

Abstract: Passive components can be manufactured on electric isolation areas between active components on completely insulating substrate. Forming at least one electronic structure comprising at least one active component (1) and at least one passive component on a support substrate made of insulating material comprises: (a) forming the active component (1) in a surface layer made of semiconducting material above a substrate; (b) forming electric insulation areas to isolate the active and passive components; (c) forming the passive component on and/or in electric insulation areas; (d) preparing the substrate surface for subsequent molecular bonding with another substrate; (e) bonding the substrate with the support substrate made of insulating material; and (f) eliminating part of the semiconductor material (11).

公开(公告)号：FR2980996B1

公开(公告)日：2013-12-27

申请号：FR1158994

申请日：2011-10-05

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： MORICEAU HUBERT ,  ARGOUD MAXIME ,  ZUSSY MARC

IPC: B26D7/01 ,  B23D59/00

公开(公告)号：AT468605T

公开(公告)日：2010-06-15

申请号：AT03727614

申请日：2003-03-26

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： ASPAR BERNARD ,  ZUSSY MARC ,  CLERC JEAN-FREDERIC

IPC: H01L21/58 ,  H01L27/12 ,  H01L21/02 ,  H01L21/20 ,  H01L21/68 ,  H01L21/762

Abstract: This invention relates to a method for making a thin layer starting from a wafer comprising a front face with a given relief, and a back face, comprising steps consisting of: a) obtaining a support handle with a face acting as a bonding face; b) preparing the front face of the wafer, this preparation including incomplete planarisation of the front face of the wafer, to obtain a bonding energy E 0 between a first value corresponding to the minimum bonding energy compatible with the later thinning step, and a second value corresponding to the maximum bonding energy compatible with the subsequent desolidarisation operation, the bonding energy E 0 being such that E 0 =alpha.E, where E is the bonding energy that would be obtained if the front face of the wafer was completely planarised, alpha is the ratio between the incompletely planarised area of the front face of the wafer and the area of the front face of the wafer if it were completely planarised; c) solidarising the front face of the wafer on the bonding face of the support handle, by direct bonding; d) thinning the wafer starting from its back face until the thin layer is obtained; e) transferring the thin layer onto a usage support, involving separation from the support handle.

公开(公告)号：DE69941045D1

公开(公告)日：2009-08-13

申请号：DE69941045

申请日：1999-10-18

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： JOLY JEAN-PIERRE ,  ASPAR BERNARD ,  BIASSE BEATRICE ,  ZUSSY MARC

IPC: H01L21/822 ,  H01L21/762 ,  H01L21/84

Abstract: Passive components can be manufactured on electric isolation areas between active components on completely insulating substrate. Forming at least one electronic structure comprising at least one active component (1) and at least one passive component on a support substrate made of insulating material comprises: (a) forming the active component (1) in a surface layer made of semiconducting material above a substrate; (b) forming electric insulation areas to isolate the active and passive components; (c) forming the passive component on and/or in electric insulation areas; (d) preparing the substrate surface for subsequent molecular bonding with another substrate; (e) bonding the substrate with the support substrate made of insulating material; and (f) eliminating part of the semiconductor material (11).

公开(公告)号：FR2876219B1

公开(公告)日：2006-11-24

申请号：FR0452283

申请日：2004-10-06

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： MORICEAU HUBERT ,  MORALES CHRISTOPHE ,  ZUSSY MARC ,  DECHAMP JEROME

IPC: H01L21/762 ,  H01L21/84

公开(公告)号：FR2874128A1

公开(公告)日：2006-02-10

申请号：FR0408597

申请日：2004-08-03

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： LAURENT JEAN YVES ,  SALOT RAPHAEL ,  MARSACQ DIDIER ,  ZUSSY MARC

IPC: H01M50/528 ,  H01M4/04 ,  H01M10/04 ,  H01M10/052 ,  H01M10/0562 ,  H01M10/0585 ,  H01M10/36

Abstract: La microbatterie comporte un support (1) ayant une face avant (2) et une face arrière (3) et des premier (4) et second (5) collecteurs de courant disposés sur la face avant (2) du support (1). Sur les collecteurs de courant (4 et 5) est disposé un empilement comportant une cathode (8) et une anode (6) séparées par un électrolyte (7). L'anode (6) et la cathode (8) sont en contact respectivement avec les premier (4) et second (5) collecteurs de courant. Une couche de protection (9) recouvre ledit empilement. La microbatterie comporte, en contact avec les premier (4) et second (5) collecteurs de courant, des connexions (10) traversant le support (1) de sa face avant (2) à sa face arrière (3). L'empilement recouvre, de préférence, sensiblement la totalité de la face avant (2) du support (1). Un procédé de réalisation de la microbatterie comporte la gravure, dans la face avant (2) du support (1), de cavités ayant une profondeur inférieure à l'épaisseur du support (1), le comblement des cavités avec un matériau conducteur et le retrait d'une épaisseur de la face arrière (3) du support (1), de manière à découvrir le matériau conducteur contenu dans les cavités.

公开(公告)号：FR2823596B1

公开(公告)日：2004-08-20

申请号：FR0105129

申请日：2001-04-13

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： ASPAR BERNARD ,  MORICEAU HUBERT ,  ZUSSY MARC ,  RAYSSAC OLIVIER

IPC: H01L21/02 ,  H01L21/68 ,  H01L21/762 ,  H01L21/78 ,  H01L27/12 ,  H01L21/30 ,  H01L23/32

Abstract: The invention relates to the preparation of a thin layer comprising a step in which an interface is created between a layer used to create said thin layer and a substrate, characterized in that said interface is made in such a way that it is provided with at least one first zone (Z1) which has a first level of mechanical strength, and a second zone (Z2) which has a level of mechanical strength which is substantially lower than that of the first zone. Said interface can be created by glueing surfaces which are prepared in a differentiated manner, by a layer which is buried and embrittled in a differentiated manner in said zones, or by an intermediate porous layer.

公开(公告)号：FR2822817A1

公开(公告)日：2002-10-04

申请号：FR0104174

申请日：2001-03-28

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： GRANGE HUBERT ,  ASPAR BERNARD ,  BOREL MICHEL ,  ZUSSY MARC

IPC: B81B3/00 ,  B81C1/00 ,  G01L9/00 ,  G12B1/04

Abstract: The invention concerns a method for producing a structure with micromachined membrane, the membrane being obtained by forming a recess produced from one of the main surfaces of a first substrate, comprising the following successive steps: fixing one of the main surfaces of the first substrate on a second substrate; producing the recess from the other main surface of the first substrate; fixing the recessed surface of the first substrate on a surface of a third substrate to obtain a cavity comprising said recess. The invention is useful for producing pressure sensors.

公开(公告)号：FR2784800B1

公开(公告)日：2000-12-01

申请号：FR9813136

申请日：1998-10-20

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： JOLY JEAN PIERRE ,  ASPAR BERNARD ,  BIASSE BEATRICE ,  ZUSSY MARC

IPC: H01L21/762 ,  H01L21/822 ,  H01L21/84 ,  H01L21/98

Abstract: Passive components can be manufactured on electric isolation areas between active components on completely insulating substrate. Forming at least one electronic structure comprising at least one active component (1) and at least one passive component on a support substrate made of insulating material comprises: (a) forming the active component (1) in a surface layer made of semiconducting material above a substrate; (b) forming electric insulation areas to isolate the active and passive components; (c) forming the passive component on and/or in electric insulation areas; (d) preparing the substrate surface for subsequent molecular bonding with another substrate; (e) bonding the substrate with the support substrate made of insulating material; and (f) eliminating part of the semiconductor material (11).