Abstract:
Electronic device (1, 1a, 1b, 1c, 1d, 1e) which comprises: a substrate (2) provided with at least one passing opening (5), a MEMS device (7) with function of differential sensor provided with a first and a second surface (9, 10) and of the type comprising at least one portion (11) sensitive to chemical and/or physical variations of fluids present in correspondence with a first and a second opposed active surface (11a, 11b) thereof, the first surface (9) of the MEMS device (7) leaving the first active surface (11a) exposed and the second surface (10) being provided with a further opening (12) which exposes said second opposed active surface (11b), the electronic device (1, 1d, 1e) being characterised in that the first surface (9) of the MEMS device (7) faces the substrate (2) and is spaced therefrom by a predetermined distance, the sensitive portion (11) being aligned to the passing opening (5) of the substrate (2), and in that it also comprises: a protective package (14, 14a, 14b), which incorporates at least partially the MEMS device (7) and the substrate (2) so as to leave the first and second opposed active surfaces (11a, 11b) exposed respectively through the passing opening (5) of the substrate (2) and the further opening (12) of the second surface (10).
Abstract:
A system for decoding a stream of compressed digital video images (IS) comprises a graphics accelerator (152 to 158) for reading (152) the stream of compressed digital video images, creating (154, 156), starting from said stream of compressed digital video images, three-dimensional scenes to be rendered, and converting (158, 160) the three-dimensional scenes to be rendered into decoded video images (OS). The graphics accelerator (152 to 158) is preferentially configured as pipeline (102) selectively switchable between operation in a graphics context and operation for decoding the stream of video images (IS) . The graphics accelerator (152 to 158) is controllable during operation for decoding the stream of compressed digital video images (IS) via a set of Application Programmer's Interfaces (APIs) comprising, in addition to new APIs, also standard APIs for operation of the graphics, accelerator (152 to 158) in a graphics context.
Abstract:
An IGBT transistor includes a drift region (103) , at least one body region (112) housed in the drift region (103) and having a first type of conductivity, and a conduction region (124) , which crosses the body region (112) in a direction perpendicular to a surface (103a) of the drift region (103) and has the first type of conductivity and a lower resistance than the body region (112) . The conduction region (124) includes a plurality of implant regions (121, 123a-123d) , arranged at respective depths (D1-D4) from the surface (103a) of the drift region (103) .
Abstract:
The invention relates to an electronic synchronous/ asynchronous transceiver device (100) for power line communication networks of the type integrated into a single chip and operating from a single supply voltage. The transceiver device includes: at least an internal register (40) that is programmable through a synchronous serial interface (41); at least a line driver for a two-way network communication over power lines implemented by a single ended power amplifier (45) with direct accessible input and output lines that is part of a tunable active filter for the transmission path; and at least a couple of linear regulators (30, 35) for powering with different voltage levels different kind of external controllers linked to the transceiver device (100).
Abstract:
The invention relates to a driving circuit (30) for an emitter-switching configuration (21) of transistors (BJT, MOS) having at least one first and one second control terminal (X1, X2) connected to the driving circuit (30) to form a controlled emitter-switching device (35) having in turn respective collector, source and gate terminals (C, S, G). Advantageously the driving circuit (30) comprises at least one IGBT device (22) inserted between the collector terminal (C) and a first end of a capacitor (C1), whose second end is connected to the first control terminal (X1), the IGBT device (22) having in turn a third control terminal (X3) connected, through a first resistive element (R1), to the gate terminal (G), as well as a second resistive element (R2) inserted between the gate terminal (G) and the second control terminal (X2). Advantageously, the driving circuit (30) further comprises an additional supply (Va) inserted between the first and second ends of the capacitor (Cl) to ensure its correct biasing.
Abstract:
In a substrate-level assembly (22), a device substrate (20) of semiconductor material has a top face (20a) and houses a first integrated device (1; 16), in particular provided with a buried cavity (3), formed within the device substrate (20), and with a membrane (4), suspended over the buried cavity (3) in the proximity of the top face (20a). A capping substrate (21) is coupled to the device substrate (20) above the top face (20a) so as to cover the first integrated device (1; 16), in such a manner that a first empty space (25) is provided above the membrane (4). Electrical-contact elements (28a, 28b) electrically connect the integrated device (1; 16) with the outside of the substrate-level assembly (22). In one embodiment, the device substrate (20) integrates at least a further integrated device (1', 10) provided with a respective membrane (4'); and a further empty space (25'), fluidically isolated from the first empty space (25), is provided over the respective membrane (4') of the further integrated device (1', 10).
Abstract:
Method for manufacturing a vertical power MOS transistor on a wide band gap semiconductor substrate (10) comprising a superficial semiconductor layer (11), the method comprising the steps of: forming a screening structure (12) on the superficial semiconductor layer (11) comprising at least one dielectric layer (12) carrying out at least a first ion implantation of a first type of dopant for forming at least one deep implanted region (14a); carrying out at least a second ion implantation of the first type of dopant for forming at least one body region (16) of the MOS transistor aligned with the deep implanted region (14a); the method comprising an activation thermal process with 1-14 low thermal budget of the first type and second type of dopant suitable to complete said formation of the body region (16), and of the deep implanted region (14a).
Abstract:
The present invention refers to a driving device of a discharge lamp (10) having two cathodes. Said device comprises first means (1, 11) having a supply input voltage (Val) and suitable for providing an alternating voltage at the ends of the cathodes, second means (3) capable of monitoring a condition of each of said cathodes and suitable for measuring a first direct voltage signal (Vdc) of the waveform of the voltage of the lamp that develops when the lamp (10) approaches the ageing condition, third means (40) coupled to the second means (3) and suitable for deactivating the first means (11), fourth means (50) suitable for providing to the third means (40) a second direct voltage signal (Vdca) proportional in value to the supply voltage (Val). The third means (40) are suitable for deactivating the first means (11) when a predetermined variation of the first direct voltage signal (Vdc) occurs in relation to the second direct voltage signal (Vdca).
Abstract:
The invention relates to a multiphase voltage regulator providing a voltage Vout to an output terminal (25) and of the type comprising N switches (3a 3b,..3n) located in parallel, providing respective current phases (Iphase1, iphase2,...IphaseN) added to each other to generate a total current (Iout) for a general load (Cout). The voltage regulator has N inductive circuits (5a 5b,..5n), each interposed between an output node (20a, 20b,..20n) of each of the N switches (3a 3b,...3n) and the output terminal (25), a sense circuit (8) which adds the voltages being in each of said output nodes (20a -20b,..20n) of said N switches (3a 3b,...3n) bringing the added voltage to an input of an amplifier circuit (10) having a second input (12) connected to the output terminal (25) to output a current (Ics) being proportional to said total current (Iout). The regulator also having a controller (15) with only two pins CS+ and CS- to read the total current (Iout), said two pins CS+ and CS- connected to the inputs of the amplifier (10).