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    Wafer level sensor package and method of forming same
    61.
    发明公开
    Wafer level sensor package and method of forming same 审中-公开
    传感器晶片级封装和方法，用于其生产

    公开(公告)号：EP2684837A3

    公开(公告)日：2014-08-13

    申请号：EP13173238.0

    申请日：2013-06-21

    Applicant: Freescale Semiconductor, Inc.

    Inventor： Bowles, Philip H. ,  Holm, Paige M. ,  Hooper, Stephen R. ,  Roop, Raymond M.

    IPC: B81C1/00

    CPC classification number: B81B7/0006 ,  B81B7/0077 ,  B81B2201/02 ,  B81C1/0023 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: A method (70) of forming sensor packages (20) entails providing a sensor wafer (74) having sensors (30) formed on a side (26) positioned within areas (34) delineated by bonding perimeters (36), and providing a controller wafer (82) having control circuitry (42) at one side (38) and bonding perimeters (46) on an opposing side (40). The bonding perimeters (46) of the controller wafer (82) are bonded to corresponding bonding perimeters (36) of the sensor wafer (74) to form a stacked wafer structure (48) in which the control circuitry (42) faces outwardly. The controller wafer (82) is sawn to reveal bond pads (32) on the sensor wafer (74) which are wire bonded to corresponding bond pads (44) formed on the same side (38) of the wafer (82) as the control circuitry (42). The structure (48) is encapsulated in packaging material (62) and is singulated to produce the sensor packages (20).

    環境センサ
    62.
    发明专利
    環境センサ 审中-公开

    公开(公告)号：JP2018151882A

    公开(公告)日：2018-09-27

    申请号：JP2017047830

    申请日：2017-03-13

    Applicant: オムロン株式会社

    Inventor： 山内 隆伸 ,  上田 直亜 ,  中村 佳代 ,  酒井 隆介

    IPC: G08C15/00

    CPC classification number: G01D21/02 ,  B81B7/0058 ,  B81B7/0087 ,  B81B2201/02 ,  B81C99/003 ,  G01L9/0019 ,  G01L9/125

    Abstract: 【課題】環境センサを設置場所に固定されている状態で使用する場合と、設置場所から離脱している状態で使用する場合とにおいて、環境センサの作動を最適化することで、環境センサの使用態様のバリエーションを増加させ利便性を向上させることが可能な技術を提供する。 【解決手段】複数種類のセンサ素子を有し、周囲の環境に関わる複数種類の物理量を測定可能な環境センサあって、環境センサが所定の設置場所に固定されている第1状態か、環境センサが前記設置場所から離脱している第2状態かを判定する(S102、S104)状態判定手段と、状態判定手段によって判定された状態が、第1状態か第2状態かによって、前記物理量の測定に係るセンサ素子の作動状況を変更する(S105、S106)作動変更手段と、を備える。 【選択図】図3

    Acoustic lens for micromachined ultrasound transducer
    65.
    发明专利
    Acoustic lens for micromachined ultrasound transducer 审中-公开
    用于微型超声波传感器的声学镜头

    公开(公告)号：JP2014183589A

    公开(公告)日：2014-09-29

    申请号：JP2014051733

    申请日：2014-03-14

    Applicant: Sonosite Inc ,  フジフィルム ソノサイト インコーポレイテッド

    Inventor： LEE WAI ,  PAUL DUNHAM ,  CHAK-YOON AW ,  N CHRIS CHAGGARES

    IPC: H04R17/00

    CPC classification number: G10K11/30 ,  B06B1/0292 ,  B06B1/0611 ,  B81B3/0021 ,  B81B2201/02 ,  G01N29/06 ,  G01N29/221 ,  G01N29/2406 ,  G01N29/2437 ,  G01N29/28 ,  G10K11/168 ,  H01L41/0825

    Abstract: PROBLEM TO BE SOLVED: To provide a matching layer for an ultrasound transducer.SOLUTION: An ultrasound transducer stack includes: a first matching layer which has a first top surface and a first bottom surface, comprises a compliant material, and has a first thickness and a first acoustic impedance; a lens layer which has a second bottom surface overlying the first top surface, a second top surface, and a second thickness, and has the second thickness and a second acoustic impedance; and a transducer layer which has a third top surface underlying the first bottom surface and the second bottom surface, the third layer including a micromachined ultrasound transducer configured to generate ultrasound at a center frequency, and the third top surface including an upper membrane of the transducer.

    Abstract translation: 要解决的问题：提供用于超声换能器的匹配层。解决方案：超声换能器堆叠包括：具有第一顶表面和第一底表面的第一匹配层，包括柔顺材料，并且具有第一厚度和 第一声​​阻抗; 透镜层，其具有覆盖第一顶表面的第二底表面，第二顶表面和第二厚度，并且具有第二厚度和第二声阻抗; 以及换能器层，其具有位于所述第一底表面和所述第二底表面下方的第三顶表面，所述第三层包括被配置为在中心频率处产生超声的微加工超声换能器，所述第三顶表面包括所述换能器的上膜 。

    Mems sensor for sensing deformation by breaking contact between two electrodes
    70.
    发明授权
    Mems sensor for sensing deformation by breaking contact between two electrodes 有权

    公开(公告)号：US11946741B2

    公开(公告)日：2024-04-02

    申请号：US17605692

    申请日：2020-05-07

    Applicant: SILMACH

    Inventor： Marc Sworowski ,  Charles Haye

    IPC: G01B7/00 ,  B81B3/00 ,  G01B7/16

    CPC classification number: G01B7/18 ,  B81B3/0086 ,  B81B2201/02 ,  B81B2203/04

    Abstract: The present invention relates to a MEMS deformation sensor for measuring a relative movement between two regions of a structure, the sensor comprising: —a first portion (2) and a second portion (3) that are movable with respect to one another along a direction of measurement (X); —a thrust element (4) mounted fixed with respect to the first portion; —a first electrode (A) and a second electrode (B) that are capable of being raised to different electrical potentials, each mounted fixed with respect to the second portion; —a connecting portion (I) forming an electrical link between the first electrode and the second electrode, the thrust element applying a load to the connecting portion when the first portion moves with respect to the second portion along the direction of measurement beyond a predetermined distance, the electrical link being broken under the effect of the load.

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