公开(公告)号：US07925124B2

公开(公告)日：2011-04-12

申请号：US12487077

申请日：2009-06-18

Applicant: Antonio D'Alessandro ,  Romeo Beccherelli ,  Cesare Umeton ,  Rita Asquini ,  Domenico Donisi ,  Luciano De Sio ,  Roberto Caputo

Inventor： Antonio D'Alessandro ,  Romeo Beccherelli ,  Cesare Umeton ,  Rita Asquini ,  Domenico Donisi ,  Luciano De Sio ,  Roberto Caputo

IPC: G02F1/1334 ,  G02F1/13 ,  H01L21/00

CPC classification number: G02F1/225 ,  G02F1/13 ,  G02F1/1326 ,  G02F2201/066 ,  G02F2201/307 ,  G02F2202/022 ,  G02F2203/055

Abstract: An electro-optical filter made of a support in which an optical guide with a diffused channel waveguide and of a cover, that are created in borosilicate glass, and which includes a gap obtained by the use of suitable spacers, filled with a grating constituted of alternating strips of polymer and liquid crystal called POLICRYPS (Polymer Liquid CRYstal Polymer Slices), and with first electrodes that are coplanar to the support and next to the optical guide with a channel, that electrically control the grating making the filter tunable, and a manufacturing process.

Abstract translation: 一种由支撑体制成的电光滤波器，其中具有扩散通道波导和盖的光导，其在硼硅玻璃中产生，并且包括通过使用合适的间隔件获得的间隙，该间隙填充有由 称为POLICRYPS（聚合物液体CRYstal聚合物切片）的聚合物和液晶的交替条带以及与支撑体共面的第一电极和具有通道的光导体旁边的第一电极，其电控制使滤光片可调谐的光栅，以及制造 处理。

公开(公告)号：US07875146B2

公开(公告)日：2011-01-25

申请号：US12395908

申请日：2009-03-02

Applicant: Takashi Yoshino

Inventor： Takashi Yoshino

IPC: B32B37/14 ,  G02B6/10

CPC classification number: G02F1/3775 ,  G02F2201/066 ,  G02F2201/38 ,  G02F2202/20 ,  G02F2202/28 ,  Y10T156/1002 ,  Y10T156/1064 ,  Y10T156/1082

Abstract: It is provided a chip having a supporting substrate, a wavelength conversion layer, a base adhesive layer made of an organic resin, an upper-side substrate provided on an upper surface side of the wavelength conversion layer, and an upper-side adhesive layer made of an organic resin for adhering the wavelength conversion layer to the upper-side substrate. The wavelength conversion layer has an optical waveguide with a periodic domain inversion structure provided therein. The chip is heat treated. Anti-reflection films are formed on an incident side end face and projection side end face of the optical waveguide, respectively.

Abstract translation: 提供了具有支撑基板，波长转换层，由有机树脂制成的基底粘合剂层，设置在波长转换层的上表面侧上的上侧基板和上侧粘合层的芯片， 的有机树脂，用于将波长转换层粘附到上侧基板。 波长转换层具有设置在其中的周期性域反转结构的光波导。 芯片经过热处理。 防反射膜分别形成在光波导的入射侧端面和突出侧端面上。

公开(公告)号：US07801400B2

公开(公告)日：2010-09-21

申请号：US12400878

申请日：2009-03-10

Applicant: Masaki Sugiyama

Inventor： Masaki Sugiyama

IPC: G02B6/26

CPC classification number: G02B6/1342 ,  G02B2006/12142 ,  G02F1/0305 ,  G02F1/035 ,  G02F2201/066

Abstract: A method of manufacturing an optical device involves forming patterns on a dielectric substrate. The patterns include a waveguide pattern having a folded part, a conductor pattern positioned on an outer peripheral side of the folded part, and a dummy pattern that connects the folded part and the conductor pattern. The method further involves performing heat diffusion processing on the dielectric substrate on which the patterns have been formed at the forming, to make the waveguide pattern into an optical waveguide.

Abstract translation: 制造光学器件的方法包括在电介质基片上形成图案。 图案包括具有折叠部分的波导图案，位于折叠部分的外周侧的导体图案，以及连接折叠部分和导体图案的虚设图案。 该方法还涉及在形成有图案的电介质基板上进行热扩散处理，以使波导图案成为光波导。

公开(公告)号：US20100232736A1

公开(公告)日：2010-09-16

申请号：US12225787

申请日：2007-03-30

Applicant: Junichiro Ichikawa ,  Futoshi Yamamoto ,  Yuhki Kinpara ,  Katsutoshi Kondou ,  Satoshi Oikawa

Inventor： Junichiro Ichikawa ,  Futoshi Yamamoto ,  Yuhki Kinpara ,  Katsutoshi Kondou ,  Satoshi Oikawa

IPC: G02F1/035

CPC classification number: G02F1/0356 ,  G02F1/2255 ,  G02F2201/063 ,  G02F2201/066 ,  G02F2201/121

Abstract: It is an object to provide an optical control device capable of realizing speed matching between a microwave and a light wave or impedance matching of microwaves and of reducing a driving voltage. An optical control device including a thin plate 1 (11) which has an electro-optical effect and has a thickness of 10 μm or less, an optical waveguide 2 formed in the thin plate, and control electrodes for controlling light passing through the optical waveguide is characterized in that the control electrodes are configured to include a first electrode and a second electrode disposed to interpose the thin plate therebetween, the first electrode has a coplanar type electrode including at least a signal electrode 4 and a ground electrode 5, and the second electrode has at least a ground electrode 54 (55, 56) and is configured to apply an electric field to the optical waveguide in cooperation with the signal electrode of the first electrode.

Abstract translation: 本发明的目的是提供一种能够实现微波和光波之间的速度匹配或微波的阻抗匹配以及降低驱动电压的光学控制装置。 一种光学控制装置，包括具有电光效应并且具有10μm以下的厚度的薄板1（11），形成在薄板中的光波导2，以及控制电极，用于控制通过光波导的光 其特征在于，控制电极被配置为包括第一电极和设置成将薄板夹在其间的第二电极，第一电极具有至少包括信号电极4和接地电极5的共面型电极，第二电极 电极至少具有接地电极54（55,56），并且被配置为与第一电极的信号电极协作地向光波导施加电场。

公开(公告)号：US20100215308A1

公开(公告)日：2010-08-26

申请号：US12721318

申请日：2010-03-10

Applicant: David Graham Moodie

Inventor： David Graham Moodie

IPC: G02F1/017 ,  G02F1/025 ,  G02F1/015

CPC classification number: G02F1/01708 ,  B82Y20/00 ,  G02B6/122 ,  G02B2006/12078 ,  G02B2006/12097 ,  G02B2006/12126 ,  G02B2006/12142 ,  G02F1/025 ,  G02F2001/0157 ,  G02F2201/063 ,  G02F2201/066

Abstract: An electroabsorption modulator comprises an absorption layer, at least one layer of p-doped semiconductor, and at least one layer of n-doped semiconductor, said absorption layer being provided between said at least one layer of p-doped semiconductor and said at least one layer of n-doped semiconductor, and said layers forming a ridge waveguide structure, wherein the thickness of said absorption layer is between 9 and 60 nm, the width of said absorption layer is between 4.5 and 12 microns, and the width of at least one of said at least one layer of p-doped semiconductor and said at least one layer of n-doped semiconductor is between 4.5 and 12 microns; whereby the width of said ridge waveguide structure is between 4.5 and 12 microns.

Abstract translation: 电吸收调制器包括吸收层，至少一层p掺杂半导体层和至少一层n掺杂半导体层，所述吸收层设置在所述至少一层p掺杂半导体层和所述至少一层之间 n型掺杂半导体层，并且所述层形成脊波导结构，其中所述吸收层的厚度在9和60nm之间，所述吸收层的宽度在4.5和12微米之间，并且至少一个 所述至少一层p掺杂半导体和所述至少一个n掺杂半导体层在4.5和12微米之间; 由此所述脊形波导结构的宽度在4.5和12微米之间。

公开(公告)号：US20090263068A1

公开(公告)日：2009-10-22

申请号：US12400882

申请日：2009-03-10

Applicant: Jamshid Nayyer

Inventor： Jamshid Nayyer

IPC: G02F1/295

CPC classification number: G02F1/035 ,  G02F1/0316 ,  G02F1/3137 ,  G02F2001/0154 ,  G02F2201/066 ,  G02F2201/12 ,  G02F2201/122 ,  G02F2202/20

Abstract: Optical guided mode fast 1×2 and 2×2 spatial switches are provided that can be used in multimedia communication networks. These switches require a relative refractive index change of only 0.0001˜0.0002 and can be realized using Lithium Niobate, Polymers, semiconductors, etc. Extinction ratios of these switches are made to be better than 45 dB, by introductions of a rear edge adjusted broken electrode and a blocker electrode into their architecture. Optical losses are less than 3 dB, and excellent switching characteristics are achieved by suppressing cross talk to ˜50 dB. The two output ports of the 1×2 (2×2) switch are made to be spatially perpendicular (in opposition) by introduction of air grooves, allowing for two-dimensional integration of unit switches into matrices. System applications of the switch are made flexible due to a discrete drive requirement for each optical input to the 2×2 switch.

Abstract translation: 光导模式提供1x2和2x2空间开关，可用于多媒体通信网络。 这些开关需要仅0.0001〜0.0002的相对折射率变化，并且可以使用铌酸锂，聚合物，半导体等实现。通过引入后边缘调整的破碎电极使这些开关的消光比优于45dB 和阻塞电极进入其架构。 光损耗小于3dB，通过将串扰抑制在〜50dB来实现优异的开关特性。 1x2（2x2）开关的两个输出端口通过引入空气槽而在空间垂直（相反），允许将单元开关二维集成到矩阵中。 由于对2x2开关的每个光输入的离散驱动要求，开关的系统应用变得灵活。

公开(公告)号：US20050271315A1

公开(公告)日：2005-12-08

申请号：US11120769

申请日：2005-05-03

Applicant: Fuwan Gan ,  Franz Kaertner

Inventor： Fuwan Gan ,  Franz Kaertner

IPC: G02F1/015 ,  G02F1/025 ,  G02F1/225 ,  G02F1/295

CPC classification number: G02F1/025 ,  G02F1/2257 ,  G02F2001/0152 ,  G02F2201/063 ,  G02F2201/066 ,  G02F2202/105

Abstract: An opto-electronic modulator includes a Mach-Zehnder structure that comprises p+in+-diodes in both arms of the Mach-Zehnder structure. The Mach-Zehnder structure is formed by waveguides so as to confine an optical mode in the opto-electronic modulator.

Abstract translation: 光电调制器包括Mach-Zehnder结构，其包括在Mach-Zehnder结构的两个臂中的+ SUPER +二极管中的p + +。 Mach-Zehnder结构由波导形成，以便将光学模式限制在光电调制器中。

公开(公告)号：US20050225838A1

公开(公告)日：2005-10-13

申请号：US11142253

申请日：2005-06-02

Applicant: Isao Tsuruma

Inventor： Isao Tsuruma

IPC: G02B6/134 ,  G02F1/03 ,  G02F1/377 ,  G02F1/35

CPC classification number: G02F1/3775 ,  G02B6/1347 ,  G02F1/0316 ,  G02F2201/066

Abstract: A wavelength converting element is provided in which a fundamental wave with respect to an optical crystal substrate and a peak of a vertical transverse mode of a second harmonic are made to coincide, the converting efficiency is good, and a beam shape which enables good joining to a lens or an optical fiber is obtained. Given that an angle formed by a surface of the optical crystal substrate and a C axis of the optical crystal substrate is θ, a period at which inverted domains are formed is p, and a distance from a distal end of a comb-shaped electrode for forming the inverted domain to a central position of a waveguide is G, in the ion implantation, a concentration peak of the ion implantation is formed at a distance of substantially (G·tan θ+p/4) from the surface of the optical crystal substrate.

Abstract translation: 提供一种波长转换元件，其中使相对于光学晶体基板的基波和二次谐波的垂直横向模式的峰值一致，转换效率良好，并且能够良好地接合到 获得透镜或光纤。 假设由光学晶体基板的表面和光学晶体基板的C轴形成的角度为θ，则形成反转畴的周期为p，并且与梳状电极的远端的距离为 在波导的中心位置处形成反向域为G，在离子注入中离子注入的浓度峰值形成在与光学晶体表面​​基本上（G.tanθ+ p / 4）的距离处 基质。

公开(公告)号：US06786967B1

公开(公告)日：2004-09-07

申请号：US09419347

申请日：1999-10-15

Applicant: Lee J. Burrows

Inventor： Lee J. Burrows

IPC: C30B2502

CPC classification number: G02F1/035 ,  C30B15/00 ,  C30B29/30 ,  C30B33/00 ,  G02B6/1345 ,  G02B2006/12169 ,  G02F2201/066 ,  G02F2201/07 ,  G02F2202/20 ,  Y10S117/91

Abstract: A method for fabricating ion exchange waveguides, such as lithium niobate or lithium tantalate waveguides in optical modulators and other optical waveguide devices, utilizes pressurized annealing to further diffuse and limit exchange of the ions and includes ion exchanging the crystalline substrate with a source of ions and annealing the substrate by pressurizing a gas atmosphere containing the lithium niobate or lithium tantalate substrate above normal atmospheric pressure, heating the substrate to a temperature ranging from about 150 degrees Celsius to about 1000 degrees Celsius, maintaining pressure and temperature to effect greater ion diffusion and limit exchange, and cooling the structure to an ambient temperature at an appropriate ramp down rate. In another aspect of the invention a powder of the same chemical composition as the crystalline substrate is introduced into the anneal process chamber to limit the crystalline substrate from outgassing alkaline earth metal oxide during the anneal period. In yet another aspect of the invention an anneal container is provided that allows for crystalline substrates to be annealed in the presence of powder without contaminating the substrate with the powder during the anneal process. Waveguides manufactured in accordance with the method exhibit superior drift performance.

Abstract translation: 用于制造离子交换波导的方法，如光调制器和其他光波导器件中的铌酸锂或钽酸锂波导，利用加压退火来进一步扩散和限制离子的交换，并且包括使晶体衬底与离子源离子交换， 通过将含有铌酸锂或钽酸锂衬底的气体气氛加压到正常大气压下来对衬底进行退火，将衬底加热至约150摄氏度至约1000摄氏度的温度，保持压力和温度以实现更大的离子扩散和限制 交换，并以适当的降速率将结构冷却至环境温度。 在本发明的另一方面，将与结晶基底相同的化学组成的粉末引入退火处理室中，以在退火期间限制结晶底物从脱气碱土金属氧化物。 在本发明的另一方面，提供一种退火容器，其允许结晶基材在粉末存在下进行退火，而不会在退火过程中用粉末污染基材。 根据该方法制造的波导显示出优异的漂移性能。

公开(公告)号：US20030194193A1

公开(公告)日：2003-10-16

申请号：US10411270

申请日：2003-04-11

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Takeyoshi Masuda

IPC: G02B006/10

CPC classification number: G02B6/132 ,  G02F1/025 ,  G02F2201/066

Abstract: A multilayer semiconductor portion is provided on a semiconductor substrate on side faces of a semiconductor portion. A second conductive type III-V compound semiconductor layer is provided on the semiconductor portion and the multilayer semiconductor portion. The multilayer semiconductor portion has first to fourth semiconductor layers sequentially arranged on the semiconductor substrate. The first semiconductor layer is a first conductive type III-V compound semiconductor layer extending along the side face of the semiconductor portion and a principal surface of the semiconductor substrate. The second semiconductor layer is a second conductive type III-V group compound semiconductor layer extending along the first semiconductor layer. The third semiconductor layer is a first conductive type III-V compound semiconductor layer extending along the second semiconductor layer. The fourth semiconductor layer is a second conductive type III-V compound semiconductor layer provided on the third semiconductor layer.

Abstract translation: 在半导体基板的半导体部分的侧面上设置有多层半导体部。 在半导体部分和多层半导体部分上设置第二导电型III-V化合物半导体层。 多层半导体部分具有顺序地布置在半导体衬底上的第一至第四半导体层。 第一半导体层是沿着半导体部分的侧面和半导体衬底的主表面延伸的第一导电III-V族化合物半导体层。 第二半导体层是沿着第一半导体层延伸的第二导电型III-V族化合物半导体层。 第三半导体层是沿第二半导体层延伸的第一导电型III-V族化合物半导体层。 第四半导体层是设置在第三半导体层上的第二导电型III-V族化合物半导体层。