Abstract:
A flash memory system may include a NAND flash memory array, and x-address circuitry configured to decode and address one or more rows of data in the NAND array. The flash memory system may further include at least one shift register configured to process the data addressed by the x-address circuitry. The flash memory system may further include at least one external clock. In some embodiments, the shift register may be an asynchronous shift register. A flash translational layer may be provided that permits multiple simultaneous data transfers.
Abstract:
An apparatus for adjustment of a digital delay function of a data memory unit comprising said data memory unit (102), an elastic store register, ESR, (104) and read clock and write clock adapted to control read and write operations, a write counter associated with the write clock and a read counter associated with the read clock. Said memory (102) works in series with said ESR (104). The memory (102) delivers two data elements from two logically neighbouring cells. Said ESR (104) writes the two data elements from the memory (102) at every cycle of the write clock, wherein if the write counter is increased by one at a cycle of the write clock the output position in the memory (102) is not changed, and if the write counter is increased by two at one cycle of the write clock the output position in the memory (102) is moved backward by one data element and if the write counter is not changed at one cycle of the write clock the output position in the memory (102) is moved forward by one data element.
Abstract:
A memory access scheme employing one or more sets of shift registers interconnected in series to which data may be loaded from or written into one or more memory devices. That is, data from the memory devices may be parallel loaded into the sets of shift registers and then serially shifted through the shift registers until it is output from the sets of shift registers and transferred to its destination. Additionally, the data may be read from and loaded into the memory devices to/from the sets of shift registers such that the shifting of the shift registers is uninterrupted during the reading and/or loading of data. Additionally, data from the memory devices may be loaded into two or more parallel chains of shift registers and then serially shifted through the shift register chains.
Abstract:
A memory access scheme employing one or more sets of shift registers interconnected in series to which data may be loaded from or written into one or more memory devices. That is, data from the memory devices may be parallel loaded into the sets of shift registers and then serially shifted through the shift registers until it is output from the sets of shift registers and transferred to its destination. Additionally, the data may be read from and loaded into the memory devices to/from the sets of shift registers such that the shifting of the shift registers is uninterrupted during the reading and/or loading of data. Additionally, data from the memory devices may be loaded into two or more parallel chains of shift registers and then serially shifted through the shift register chains.
Abstract:
The present disclosure includes apparatuses and methods related to a memory device as the store to program instructions. An example apparatus comprises a memory device having an array of memory cells and sensing circuitry coupled to the array. The sensing circuitry includes a sense amplifier and a compute component configured to implement logical operations. A memory controller, coupled to the array and the sensing circuitry is configured to receive a block of instructions including a plurality of program instructions. The memory controller is configured to store the block of instructions in the array and retrieve program instructions to perform logical operations on the compute component.
Abstract:
An apparatus includes an interface circuit coupled to an electronic device. The interface circuit provides source synchronous communication with the electronic device using a strobe signal. The interface circuit is configured to gate the strobe signal in order to successfully communicate with the electronic device.
Abstract:
Selecting circuits for columns of an array of memory cells are used to hold read data or write data of the memory cells. In a first set of embodiments, a shift register chain, having a stage for columns of the array, has the columns arranged in a loop. For example, every other column or column group could be assessed as the pointer moves in first direction across the array, with the other half of the columns being accessed as the pointer moves back in the other direction. Another set of embodiments divides the columns into two groups and uses a pair of interleaved pointers, one for each set of columns, clocked at half speed. To control the access of the two sets, each of which is connected to a corresponding intermediate data bus. The intermediate data buses are then attached to a combined data bus, clocked at full speed.
Abstract:
Some forms of memory data I/O require a parallel interface with the memory array and a serial interface with data ports external to the memory. A hybrid decoder/scan register data I/O (300) scheme is described that offers a high speed data access to selected points along a set of scan registers (304(1),... , 304(s)) that connect to the columns (bit lines 602) of a memory array (600). The interface to the memory array is a long register (302) which comprises a chain of scan register blocks (304). Data to and from the memory array is transferred in a parallel manner. Data I/O to a specific memory address or memory data block is routed from a serial data I/O line, through a set of switches (316) controlled by a decoder circuit (314, 320) to the input (or output) port of one of the scan register blocks (304). This hybrid data I/O circuit offers a high speed access to selected points within the column circuits of a memory array while maintaining an efficient and high speed serial output offered by a scan chain data register.
Abstract:
A sense amplifier (200) for use in a serial configuration memory includes multiple stages which are enabled and disabled in a controlled manner (270), in response to a control pulse (SAEN). The control pulse (SAEN) is produced every Nth period of an externally provided clock signal, the clock being used to clock out a bitstream representing the contents of the memory device. In a preferred embodiment, N such sense amps (200) are utilized to read out in parallel fashion the N memory cells (bits) comprising an accessed memory location. The sense amps (200) are therefore active only of a period of time sufficient to read out a memory cell.
Abstract:
An ink jet print head identification system for providing information to the electronics (98) of an ink jet printer includes a plurality of shift registers (92) having a plurality of address lines. The memory input of each shift register is electrically connected to a memory matrix that supplies digital bits of information to the shift registers (92) in response to receiving a decode input signal (94).