Abstract:
A multilayer mirror for reflecting extreme ultraviolet (EUV) radiation, the mirror comprises a substrate and a stack of layers formed on the substrate. The stack of layers comprises layers comprising a low index material and a high index material, the low index material having a lower real part of the refractive index than the high index material at a given operating wavelength λ. The mirror provides a first peak of reflectivity of 20% or more at a first wavelength λ 1 in a first wavelength band extending from 6 nm to 7 nm and a second peak of reflectivity of 20% or more at a second wavelength λ 2 in a second wavelength band extending from 12.5 nm to 15 nm.
Abstract:
A projection lens of an EUV-lithographic projection exposure system, comprising a plurality of reflective optical elements, each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light. The lens further comprises support means for passively or actively supporting at least one optical element which is controlled to a temperature by a first tempering means. The support means comprising a temperature sensitive element, wherein the temperature sensitive element is controlled to a constant or to a predefined temperature by a second tempering element which is arranged between the temperature sensitive element and the first tempering element.
Abstract:
Provided is an X-ray mirror, a method of producing the X-rat mirror, and an X-ray apparatus. The X-ray mirror comprises: a substrate; and an X-ray reflecting structure formed of multiple regions present on the substrate, in which the X-ray reflecting structure comprises a mesostructured film that has the multiple regions having different structural periods in a normal direction of the substrate. Thus, there can be reduced the absorption loss of an X-ray of the mirror that reflects X-rays having different energies.
Abstract:
In order to reduce the adverse influence of contamination composed of silicon dioxide, hydrocarbons and/or metals within an EUV lithography apparatus on the reflectivity, a reflective optical element (50) for the extreme ultraviolet wavelength range having a reflective surface (59) is proposed, wherein the multilayer coating of the reflective surface (59) has a topmost layer (56) composed of a fluoride. The contaminations mentioned, which deposit on the reflective optical element (50) during the operation of the EUV lithography apparatus, are converted into volatile compounds by the addition of at least one of the substances mentioned hereinafter: atomic hydrogen, molecular hydrogen, perfluorinated alkanes such as e.g. tetrafluoromethane, oxygen, nitrogen and/or helium.
Abstract:
A transmissive spectral purity filter (100) is configured to transmit extreme ultraviolet radiation. The spectral purity filter (102F) includes a filter part (100) having a plurality of apertures (104) configured to transmit extreme ultraviolet radiation and to suppress transmission of a second type of radiation. Each aperture (104) has been manufactured by an anisotropic etching process.
Abstract:
A method is disclosed for in-situ monitoring of an EUV mirror to determine a degree of optical degradation. The method may comprise the steps / acts of irradiating at least a portion of the mirror with light having a wavelength outside the EUV spectrum, measuring at least a portion of the light after the light has reflected from the mirror, and using the measurement and a pre-determined relationship between mirror degradation and light reflectivity to estimate a degree of multi-layer mirror degradation. Also disclosed is a method for preparing a near-normal incidence, EUV mirror which may comprise the steps / acts of providing a metallic substrate, diamond turning a surface of the substrate, depositing at least one intermediate material overlying the surface using a physical vapor deposition technique, and depositing a multi-layer mirror coating overlying the intermediate material.
Abstract:
La présente invention concerne le domaine de l'instrumentation analytique par rayons X (RX). Elle concerne plus précisément un dispositif de délivrance d'un faisceau de rayons X à haute énergie, typiquement supérieure à 4 keV, pour des applications analytiques par rayons X.
Abstract:
Zur präzisen Charakterisierung von reflektiven optischen Elementen (1) für den extremen ultravioletten und weichen Röntgenwellenlängenbereich wird vorgeschlagen, auf seiner reflektiven Fläche (2) mindestens zwei Markierungen (Ma, Mb, Mφ), insbesondere im optisch genutzten Bereich (3) aufzubringen und deren Position zu vermessen, bevor das reflektive optische Element (1 ) in eine Reflektometer eingebaut wird und die Reflektivität und ggf. auch Sekundärstrahlung des reflektiven optischen Elements (1 ) gemessen werden.
Abstract:
In a multilayer mirror (6) for EUV radiation, which contains a layer sequence (7), arranged on a substrate (3), of a multiplicity of layer pairs (5) of in each case a first layer (1) composed of a first material and a second layer (2), applied thereon, composed of a second material, the first layers (1) and the second layers (2), according to the invention, each have a thickness of more than 2 nm, and the first material or the second material is a silicon boride or a molybdenum nitride.