Field emission light source
    61.
    发明授权
    Field emission light source 失效
    场发射光源

    公开(公告)号:US06573643B1

    公开(公告)日:2003-06-03

    申请号:US09677361

    申请日:2000-10-02

    Abstract: A field emission cathode for use in flat panel displays is described including a layer of conductive material and a layer of amorphic diamond film, functioning as a low effective work-function material, deposited over the conductive material to form emission sites. The emission sites each contain at least two sub-regions having differing electron affinities. Use of the cathode to form a computer screen is also described along with the use of the cathode to form a fluorescent light source.

    Abstract translation: 描述了用于平板显示器的场发射阴极,其包括沉积在导电材料上以形成发射位点的导电材料层和用作低有效功函数材料的非晶金刚石膜层。 发射部位各自含有至少两个具有不同电子亲和力的亚区域。 还描述了使用阴极形成计算机屏幕,同时使用阴极来形成荧光光源。

    Field emission device and method for the conditioning thereof
    62.
    发明授权
    Field emission device and method for the conditioning thereof 失效
    场致发射装置及其调理方法

    公开(公告)号:US06573642B1

    公开(公告)日:2003-06-03

    申请号:US09491357

    申请日:2000-01-26

    CPC classification number: H01J1/3044 H01J2201/30426

    Abstract: A field emission device (100) includes an electron emitter structure (105) having a deuteride layer (108), which defines a surface (109) of electron emitter structure (105). Deuteride layer (108) is disposed upon an electron emitter (106), which is made from a metal. Deuteride layer (108) is a deuteride of the metal from which electron emitter (106) is made. A method for conditioning field emission device (100) includes the step of providing a contaminated cathode structure (137), which has a contaminated emitter structure (138). The method further includes the step of causing deuterium to react with a metal oxide layer (140) of emitter structure (138), so that the deuterium replaces the oxygen of metal oxide layer (140).

    Abstract translation: 场发射器件(100)包括具有限定电子发射器结构(105)的表面(109)的氘化层(108)的电子发射器结构(105)。 氘化层(108)设置在由金属制成的电子发射器(106)上。 氘化层(108)是制造电子发射体(106)的金属的氘化物。一种用于调节场发射装置(100)的方法包括提供污染的阴极结构(137)的步骤,该污染阴极结构具有污染的发射体结构 (138)。 该方法还包括使氘与发射极结构(138)的金属氧化物层(140)反应的步骤,使得氘代替金属氧化物层(140)的氧。

    Fabrication of electron emitters coated with material such as carbon
    63.
    发明授权
    Fabrication of electron emitters coated with material such as carbon 有权
    制造涂覆有碳材料的电子发射体

    公开(公告)号:US06379210B2

    公开(公告)日:2002-04-30

    申请号:US09727023

    申请日:2000-11-29

    Abstract: A cathode structure suitable for a flat panel display is provided with coated emitters. The emitters are formed with material, typically nickel, capable of growing to a high aspect ratio. These emitters are then coated with carbon containing material for improving the chemical robustness and reducing the work function. One coating process is a DC plasma deposition process in which acetylene is pumped through a DC plasma reactor to create a DC plasma for coating the cathode structure. An alternative coating process is to electrically deposit raw carbon-based material onto the surface of the emitters, and subsequently reduce the raw carbon-based material to the carbon containing material. Work function of coated emitters is typically reduced by about 0.8 to 1.0 eV.

    Abstract translation: 适用于平板显示器的阴极结构设置有涂覆的发射器。 发射体由能够生长到高纵横比的材料(通常为镍)形成。 然后,这些发射体涂覆有含碳材料,以改善化学稳定性并降低功函数。 一个涂覆工艺是DC等离子体沉积工艺,其中将乙炔泵送通过DC等离子体反应器以产生用于涂覆阴极结构的DC等离子体。 另一种涂覆方法是将原始碳基材料电沉积到发射体的表面上,随后将原始的碳基材料还原成含碳材料。 涂覆发射体的功函数通常降低约0.8至1.0eV。

    Electron emitters coated with carbon containing layer
    64.
    发明授权
    Electron emitters coated with carbon containing layer 失效
    涂有碳层的电子发射体

    公开(公告)号:US06356014B2

    公开(公告)日:2002-03-12

    申请号:US08826454

    申请日:1997-03-27

    Abstract: A cathode structure suitable for a flat-panel display contains an emitter layer (213) divided into emitter lines, a plurality of electron emitters (229, 239, or 230) situated over the emitter lines, and a gate layer (215A) having an upper surface spaced largely above the electron emitters. The gate layer has a plurality of gate holes (215B) each corresponding to one of the electron emitters. The cathode structure further includes a carbon-containing layer (340, 240, or 241) coated over the electron emitters and directly on at least part of the upper surface of the gate layer such that at least part of the carbon-containing layer extending along and above the gate layer is exposed.

    Abstract translation: 适用于平板显示器的阴极结构包含分为发射极线的发射极层(213),位于发射极线之上的多个电子发射体(229,239或230),以及栅极层(215A),具有 上表面大大高于电子发射体。 栅极层具有多个对应于一个电子发射体的栅极孔(215B)。 阴极结构还包括涂覆在电子发射体上并直接位于栅极层的上表面的至少部分上的含碳层(340,240或241),使得至少部分含碳层沿着 并且栅极层上方露出。

    Atomically sharp field emission cathodes
    65.
    发明授权
    Atomically sharp field emission cathodes 失效
    原子尖锐场发射阴极

    公开(公告)号:US6113451A

    公开(公告)日:2000-09-05

    申请号:US470994

    申请日:1999-12-22

    CPC classification number: H01J9/025 H01J2201/30426

    Abstract: An electron emitting device characterized by a monocrystalline substrate, a plurality of monocrystalline nanomesas or pillars disposed on the subste in a spaced relationship and extending generally normally therefrom, monocrystalline self-assembled tips disposed on top of the nanomesas, and essentially atomically sharp apexes on the tips for field emitting electrons. A method for making the emitters is characterized by forming a gate electrode and gate electrode apertures before forming the tips on the nanomesas.

    Abstract translation: 一种电子发射器件,其特征在于单晶衬底,多个单晶纳米片或支柱,以间隔开的关系设置在衬底上,并且通常由其延伸,单晶自组装尖端设置在纳米片的顶部,并且基本上原子上尖锐的顶点 场发射电子的技巧。 制造发射体的方法的特征在于在形成纳米片上的尖端之前形成栅电极和栅电极孔。

    Electron tube having a diamond field emitter
    66.
    发明授权
    Electron tube having a diamond field emitter 失效
    具有金刚石场发射体的电子管

    公开(公告)号:US5959400A

    公开(公告)日:1999-09-28

    申请号:US950177

    申请日:1997-10-14

    Abstract: The present invention relates to an electron tube having a configuration which can maintain its operating stability for a long period of time. The electron tube comprises, at least, a field emitter which is made of diamond or a material mainly composed of diamond and has a surface terminated with hydrogen, and a sealed envelope for accommodating the diamond field emitter. Due to the hydrogen termination, the electron affinity of the diamond field emitter is set to a negative state. Also, hydrogen is enclosed within the sealed envelope. Due to this configuration, the hydrogen-terminated state of the diamond field emitter surface is stabilized, and the electron affinity of the diamond emitter is restrained from changing for a long period of time.

    Abstract translation: 本发明涉及具有长时间保持其运行稳定性的结构的电子管。 电子管至少包括由金刚石制成的场致发射体或主要由金刚石构成并具有用氢封端的表面的材料,以及用于容纳金刚石场发射体的密封外壳。 由于氢终止,金刚石场发射体的电子亲和力被设定为负状态。 此外,氢气封闭在密封的信封内。 由于这种结构,金刚石场发射体表面的氢端基状态被稳定,并且金刚石发射体的电子亲和力被抑制长时间变化。

    Enhanced field emission from microtip structures
    68.
    发明授权
    Enhanced field emission from microtip structures 失效
    从微尖端结构增强场发射

    公开(公告)号:US5886459A

    公开(公告)日:1999-03-23

    申请号:US777936

    申请日:1996-12-23

    CPC classification number: H01J9/025 H01J2201/30426

    Abstract: A method and system for manufacturing a field emission cathode having enhanced electron emission properties. The field emission cathode is prepared by providing a field emission substrate, an alkali metal alloy is formed at and below the exposed surface of the substrate, and a surface layer of alkali metal atoms are formed on the exposed surface by Gibbsian diffusion segregation action. If the monolayer, or surface layer, is desorbed, the diffusion action reestablishes the alkali metal surface layer thereby providing a stable alkali metal layer and enhanced electron emission characteristics.

    Abstract translation: 一种具有增强的电子发射特性的场致发射阴极的制造方法和系统。 通过设置场致发射基板来制备场发射阴极,在基板的暴露表面和下面形成碱金属合金,通过吉布斯扩散分离作用在暴露的表面上形成碱金属原子的表面层。 如果单层或表层被解吸,则扩散作用重新建立了碱金属表面层,从而提供稳定的碱金属层和增强的电子发射特性。

    Method of fabricating a field emission device
    69.
    发明授权
    Method of fabricating a field emission device 失效
    制造场致发射器件的方法

    公开(公告)号:US5817201A

    公开(公告)日:1998-10-06

    申请号:US876583

    申请日:1997-06-16

    CPC classification number: H01J1/3042 H01J9/025 H01J2201/30426 H01J2201/319

    Abstract: The invention generally relates to the technical field of devices using the effect to emit electrons out of a solid into vacuum due to high electric field strength. Such devices are usually called field emission devices. The invention relates more specifically to the structure of a field emission device, to the method of fabricating a field emission device, and to the use of a multitude of field emission devices in the technical field of flat panel displays. The inventive structure of a field emission device (15) comprises an individual series resistor for each electron emitting tip (1), wherein the series resistor is formed by the tip (1) itself. The tip (1) comprises a body (9) of a first material with high resistivity and an at least partial coating (7) of a second material with low work function, wherein the body (9) of the first material forms the series resistor and the coating (7) of the second material provides for electron emission. The method for fabricating a field emission device (15) uses depositing and sacrificial layer etch back techniques to provide easy and precise control of tip height and shape and also easy and precise control of the tip-to-gate distance and geometry.

    Abstract translation: 本发明一般涉及由于高电场强度而使用这种效应将电子从固体发射到真空中的装置的技术领域。 这种装置通常称为场致发射装置。 本发明更具体地涉及场发射装置的结构,制造场致发射装置的方法以及在平板显示器的技术领域中使用多种场致发射装置。 场发射器件(15)的本发明结构包括用于每个电子发射尖端(1)的单独的串联电阻器,其中串联电阻器由尖端(1)本身形成。 尖端(1)包括具有高电阻率的第一材料的主体(9)和具有低功函数的第二材料的至少部分涂层(7),其中第一材料的主体(9)形成串联电阻器 并且第二材料的涂层(7)提供电子发射。 用于制造场发射器件(15)的方法使用沉积和牺牲层回蚀技术来提供尖端高度和形状的容易和精确的控制,并且还容易且精确地控制尖端到栅极的距离和几何形状。

    Field emission device with series resistor tip and method of
manufacturing
    70.
    发明授权
    Field emission device with series resistor tip and method of manufacturing 失效
    带串联电阻头的场发射装置及制造方法

    公开(公告)号:US5783905A

    公开(公告)日:1998-07-21

    申请号:US774853

    申请日:1996-12-27

    CPC classification number: H01J1/3042 H01J9/025 H01J2201/30426 H01J2201/319

    Abstract: The invention generally relates to the technical field of devices using the effect to emit electrons out of a solid into vacuum due to high electric field strength. Such devices are usually called field emission devices. The invention relates more specifically to the structure of a field emission device, to the method of fabricating a field emission device, and to the use of a multitude of field emission devices in the technical field of flat panel displays. The inventive structure of a field emission device (15) comprises an individual series resistor for each electron emitting tip (1), wherein the series resistor is formed by the tip (1) itself. The tip (1) comprises a body (9) of a first material with high resistivity and an at least partial coating (7) of a second material with low work function, wherein the body (9) of the first material forms the series resistor and the coating (7) of the second material provides for electron emission. The method for fabricating a field emission device (15) uses depositing and sacrificial layer etch back techniques to provide easy and precise control of tip height and shape and also easy and precise control of the tip-to-gate distance and geometry.

    Abstract translation: 本发明一般涉及由于高电场强度而使用这种效应将电子从固体发射到真空中的装置的技术领域。 这种装置通常称为场致发射装置。 本发明更具体地涉及场发射装置的结构,制造场致发射装置的方法以及在平板显示器的技术领域中使用多种场致发射装置。 场发射器件(15)的本发明结构包括用于每个电子发射尖端(1)的单独的串联电阻器,其中串联电阻器由尖端(1)本身形成。 尖端(1)包括具有高电阻率的第一材料的主体(9)和具有低功函数的第二材料的至少部分涂层(7),其中第一材料的主体(9)形成串联电阻器 并且第二材料的涂层(7)提供电子发射。 用于制造场发射器件(15)的方法使用沉积和牺牲层回蚀技术来提供尖端高度和形状的容易和精确的控制,并且还容易且精确地控制尖端到栅极的距离和几何形状。

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