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    LOW GATE CURRENT FIELD EMITTER CELL AND ARRAY WITH VERTICAL THIN-FILM-EDGE EMITTER
    66.
    发明申请
    LOW GATE CURRENT FIELD EMITTER CELL AND ARRAY WITH VERTICAL THIN-FILM-EDGE EMITTER 审中-公开
    低栅极电流场发射单元和阵列与垂直薄膜边缘发射器

    公开(公告)号：WO2004001795A3

    公开(公告)日：2004-08-05

    申请号：PCT/US0236263

    申请日：2002-11-13

    Applicant: US GOV SEC NAVY

    Inventor： DAVID S Y SHU

    IPC: H01J1/30 ,  H01J1/304 ,  H01J1/316 ,  H01J1/62 ,  H01J3/02 ,  H01J9/00 ,  H01J9/02 ,  H01J19/24 ,  H01J63/04 ,  H01L20060101

    CPC classification number: B82Y30/00 ,  B82Y10/00 ,  H01J1/304 ,  H01J1/3046 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2201/319

    Abstract: A field emitter cell (10) includes a thin film emitter (22) normal to the gate layer (18). The field emitter cell (10) may include a conductive substrate layer (12), and insulator layer (16) having a perforation (30), a gate layer (18) having a perforation, an emitter layer (22), and other optional layers. The perforation in the gate layer (18) is larger and concentrically offset with respect to the perforation (30) in the insulating layer (16) and may be of a tapered construction. Alternatively, the perforation of the gate layer (18) may be coincident, or larger or smaller than, the perforation (30) in the insulating layer (16), provided that the gate layer (18) is shielded from the emitter (22) from a direct line-of-sight by a nonconducting standoff layer. Optionally, the thin-film-edge emitter (22) may include incorporated nanofilaments (50). The field emitter cell (10) has a low gate current, useful for various applications such as field emitter displays, high voltage power switching, RF amplification and other applications that require high emission currents.

    Abstract translation: 场致发射单元（10）包括垂直于栅极层（18）的薄膜发射极（22）。 场致发射单元（10）可以包括导电基底层（12）和具有穿孔（30）的绝缘体层（16），具有穿孔的栅极层（18），发射极层（22）和其它任选的 层。 栅极层（18）中的穿孔相对于绝缘层（16）中的穿孔（30）更大并且同心地偏移，并且可以是锥形结构。 或者，栅极层（18）的穿孔可以与绝缘层（16）中的穿孔（30）重合或更大或更小，只要栅极层（18）与发射极（22）屏蔽， 通过非导电隔离层的直接视线。 可选地，薄膜边缘发射器（22）可以包括并入的纳米丝（50）。 场发射极单元（10）具有低栅极电流，可用于各种应用，例如场致发射显示器，高压功率开关，RF放大以及其它需要高发射电流的应用。

    LOW GATE CURRENT FIELD EMITTER CELL AND ARRAY WITH VERTICAL THIN-FILM-EDGE EMITTER
    67.
    发明申请
    LOW GATE CURRENT FIELD EMITTER CELL AND ARRAY WITH VERTICAL THIN-FILM-EDGE EMITTER 审中-公开
    低栅极电流场发射单元和阵列与垂直薄膜边缘发射器

    公开(公告)号：WO2004001795A2

    公开(公告)日：2003-12-31

    申请号：PCT/US2002/036263

    申请日：2002-11-13

    Applicant: THE GOVERNMENT OF THE UNITED STATES OF AMERICA as represented by THE SECRETARY OF THE NAVY

    Inventor： DAVID, S., Y., Shu

    IPC: H01L

    CPC classification number: B82Y30/00 ,  B82Y10/00 ,  H01J1/304 ,  H01J1/3046 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2201/319

    Abstract: A field emitter cell includes a thin-film-edge emitter normal to the gate layer. The field emitter cell may include a conductive substrate layer, an insulator layer having a perforation, a gate layer having a perforation, an emitter layer, and other optional layers. The perforation in the gate layer is larger and concentrically offset with respect to the perforation in the insulating layer and may be of a tapered construction. Alternatively, the perforation in the gate layer may be coincident with, or larger or smaller than, the perforation in the insulating layer, provided that the gate layer is shielded from the emitter from a direct line-of-sight by a nonconducting standoff layer. Optionally, the thin-film-edge emitter may include incorporated nanofilaments. The field emitter cell has low gate current, useful for various applications such as field emitter displays, high voltage power switching, RF amplification and other applications that require high emission currents.

    Abstract translation: 场发射极单元包括垂直于栅极层的薄膜边缘发射极。 场致发射单元可以包括导电基底层，具有穿孔的绝缘体层，具有穿孔的栅极层，发射极层和其它可选层。 栅极层中的穿孔相对于绝缘层中的穿孔更大并且同心地偏移，并且可以是锥形结构。 或者，栅极层中的穿孔可以与绝缘层中的穿孔重合或更大或更小，只要栅极层通过非导电间隔层从发射器与直接视线屏蔽。 任选地，薄膜边缘发射器可以包括并入的纳米丝。 场致发射单元具有低栅极电流，可用于各种应用，例如场致发射显示器，高压功率开关，RF放大和其他需要高发射电流的应用。

    ELECTRON EMITTING DEVICE, ELECTRON EMITTING SOURCE, IMAGE DISPLAY, AND METHOD FOR PRODUCING THEM
    68.
    发明申请
    ELECTRON EMITTING DEVICE, ELECTRON EMITTING SOURCE, IMAGE DISPLAY, AND METHOD FOR PRODUCING THEM 审中-公开
    电子发射器件，电子发射源，图像显示器及其制造方法

    公开(公告)号：WO99066523A1

    公开(公告)日：1999-12-23

    申请号：PCT/JP1999/003240

    申请日：1999-06-17

    IPC: H01J1/304 ,  H01J9/02 ,  H01J1/30 ,  H01J29/04 ,  H01J31/12

    CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30469 ,  H01J2201/319

    Abstract: An electron emitting device comprising a first electrode (2) and an electron emitting part (24) provided on the first electrode (2) and constituted of particles or their aggregates (3), the particles (3) containing a carbonaceous material which has a carbon six-membered ring structure and contains, for example, graphite or carbon nanotube as its main component.

    Abstract translation: 一种电子发射装置，包括设置在第一电极（2）上并由颗粒或其聚集体（3）构成的第一电极（2）和电子发射部分（24），所述颗粒（3）含有含碳材料 碳六元环结构，并且包含例如石墨或碳纳米管作为其主要成分。

    FIELD-EMISSION ELECTRON SOURCE
    69.
    发明申请
    FIELD-EMISSION ELECTRON SOURCE 审中-公开
    场发射电子源

    公开(公告)号：WO99049491A1

    公开(公告)日：1999-09-30

    申请号：PCT/JP1999/001423

    申请日：1999-03-19

    IPC: H01J1/304 ,  H01L27/07 ,  H01J1/30 ,  H01L27/06

    CPC classification number: H01L27/0705 ,  H01J1/3042 ,  H01J2201/319 ,  H01J2329/00

    Abstract: A field-emission electron source which comprises a field-emission electron source part formed on a p-type silicon substrate (1) and an n-channel field-effect transistor part formed on the p-type silicon substrate (1) in a position corresponding to the field-emission electron source part and in which the field-emission electron source part is provided in the drain region of the field-effect transistor part, and the field-emission current from the field-emission source part is controlled by a control voltage applied to the gate electrode (8) of the field-effect transistor part, wherein the drain region includes at least two wells (3, 4) with different impurity concentrations, the well (4) having the lower impurity concentration is provided at an end part of the drain region provided in contact with the channel region of the field-effect transistor part.

    Abstract translation: 一种场发射电子源，其包括在p型硅衬底（1）上形成的场发射电子源部分和形成在p型硅衬底（1）上的位置处的n沟道场效应晶体管部分 对应于场发射电子源部分，并且其中场致发射电子源部分设置在场效应晶体管部分的漏极区域中，并且来自场致发射源部分的场致发射电流由 施加到场效应晶体管部分的栅电极（8）的控制电压，其中漏极区域包括具有不同杂质浓度的至少两个阱（3,4），具有较低杂质浓度的阱（4）被提供在 漏极区域的端部设置成与场效应晶体管部分的沟道区域接触。

    CHARGE DISSIPATION FIELD EMISSION DEVICE
    70.
    发明申请
    CHARGE DISSIPATION FIELD EMISSION DEVICE 审中-公开
    充电放电场发射装置

    公开(公告)号：WO98034280A1

    公开(公告)日：1998-08-06

    申请号：PCT/US1998/000129

    申请日：1998-01-05

    IPC: H01J1/304 ,  H01L29/66 ,  H01L29/06 ,  H01J1/16 ,  H01J1/30 ,  H01J9/02 ,  H01L29/12

    CPC classification number: H01J1/3042 ,  H01J31/127 ,  H01J2201/319

    Abstract: A charge dissipation field emission device (200, 300, 400) includes a supporting substrate (210, 310, 410), a cathode (215, 315, 415) formed thereon, a dielectric layer (240, 340, 440) formed on the cathode (215, 315, 415) and having emitter wells (260, 360, 460) and a charge dissipation well (252, 352, 452, 453) exposing a charge-collecting surface (248, 348, 448, 449); for bleeding off gaseous positive charge generated during the operation of the charge dissipation field emission device (200, 300, 400), an electron emitter (270, 370, 470) formed in each of the emitter wells (260, 360, 460), and an anode (280, 380, 480) spaced from the dielectric layer (240, 340, 440) for collecting electrons emitted by the electron emitters (270, 370, 470).

    Abstract translation: 电荷耗散场发射装置（200,300,400）包括支撑衬底（210,310,410），形成在其上的阴极（215,315,415），形成在其上的电介质层（240,340,440） 阴极（215,315,415）并且具有暴露电荷收集表面（248,348,448,449）的发射极阱（260,360,460）和电荷耗散阱（252,352,452,453）; 用于排出在电荷耗散场致发射器件（200,300,400）的操作期间产生的气态正电荷，形成在每个发射极阱（260,360,460）中的电子发射器（270,370,470）， 以及与电介质层（240,340,440）间隔开用于收集由电子发射器（270,370,470）发射的电子的阳极（280,380,480）。

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