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    Method for forming a microfabricated structure
    71.
    发明授权
    Method for forming a microfabricated structure 有权
    形成微细结构的方法

    公开(公告)号：US09302905B1

    公开(公告)日：2016-04-05

    申请号：US14738980

    申请日：2015-06-15

    Applicant: Innovative Micro Technology

    Inventor： Suresh K Sampath

    IPC: H01L21/00 ,  B81C1/00 ,  H01L21/027

    CPC classification number: B81C1/00412 ,  B81C2201/0143 ,  H01L21/0272 ,  H01L21/32139 ,  H01L43/12

    Abstract: A method for forming a feature in a device layer, including forming a first layer of a liftoff material and a second layer of photoresist over the liftoff material, exposing the photoresist and developing the photoresist and the liftoff layer. The photoresist develops at a slower rate than the liftoff layer. The development results in a first opening in the lift off layer and a second opening in the photoresist layer wherein the first opening is smaller than the second opening because of the different developing rates. The device layer is then dry etched or ion milled through the opening. Subsequent removal of the first layer and second layer leaves a clean surface of the patterned device layer, without the fences that can be formed using other methods.

    Abstract translation: 一种用于在器件层中形成特征的方法，包括在剥离材料上形成第一层剥离材料和第二层光致抗蚀剂，暴露光致抗蚀剂并显影光致抗蚀剂和剥离层。 光致抗蚀剂以比剥离层更慢的速率显影。 显影导致剥离层中的第一开口和光致抗蚀剂层中的第二开口，其中由于不同的显影速率，第一开口小于第二开口。 然后将器件层干蚀刻或通过开口离子研磨。 随后去除第一层和第二层离开图案化的器件层的干净的表面，而不需要使用其它方法形成的栅栏。

    METHOD FOR FORMING THROUGH SUBSTRATE VIAS WITH TETHERS
    72.
    发明申请
    METHOD FOR FORMING THROUGH SUBSTRATE VIAS WITH TETHERS 有权
    通过具有四面体的基板VIAS形成的方法

    公开(公告)号：US20160093531A1

    公开(公告)日：2016-03-31

    申请号：US14619068

    申请日：2015-02-11

    Applicant: Innovative Micro Technology

    Inventor： John C HARLEY ,  Zhimin J. Yao

    IPC: H01L21/768 ,  H01L21/321 ,  H01L21/288 ,  H01L21/02 ,  H01L21/84 ,  B81C1/00

    CPC classification number: H01L21/76898 ,  B81C1/00301 ,  H01L21/7682 ,  H01L2224/02372 ,  H01L2224/05548

    Abstract: A method for forming through silicon vias (TSVs) in a silicon substrate is disclosed. The method involves forming a silicon post as an substantially continuous annulus in a first side of a silicon substrate, removing material from an opposite side to the level of the substantially continuous annulus, removing the silicon post and replacing it with a metal material to form a metal via extending through the thickness of the substrate. The substantially continuous annulus may be interrupted by at least one tether which connects the silicon post to the silicon substrate. The tether may be formed of a thing isthmus of silicon, or some suitable insulating material.

    Abstract translation: 公开了一种在硅衬底中形成硅通孔（TSV）的方法。 该方法包括在硅衬底的第一侧中形成硅柱作为基本上连续的环状空间，从与基本上连续的环的水平面相反的一侧去除材料，去除硅柱并用金属材料代替它，以形成 金属通过延伸穿过衬底的厚度。 基本上连续的环可被至少一个将硅柱连接到硅衬底的系绳中断。 系绳可以由硅的地峡或一些合适的绝缘材料形成。

    Wafer level hermetic bond using metal alloy with raised feature and wetting layer
    73.
    发明授权
    Wafer level hermetic bond using metal alloy with raised feature and wetting layer 有权
    使用具有凸起特征和润湿层的金属合金的晶圆级密封

    公开(公告)号：US09162878B2

    公开(公告)日：2015-10-20

    申请号：US14194794

    申请日：2014-03-02

    Applicant: Innovative Micro Technology

    Inventor： Christopher S Gudeman ,  Prosenjit Sen

    IPC: H01L21/56 ,  B81C1/00

    CPC classification number: B81C1/00269 ,  B81C1/00849 ,  B81C2203/019

    Abstract: Systems and methods for forming an encapsulated device include a substantially hermetic seal which seals a device in an environment between two substrates. The substantially hermetic seal is formed by an alloy of two metal layers, one having a lower melting temperature than the other. The metal layers may be deposited two substrates, along with a raised feature formed under at least one of the metal layers. The two metals may form an alloy of a predefined stoichiometry in at least two locations on either side of the midpoint of the raised feature. The formation of the alloy may be improved by the use of an organic wetting layer adjacent to the lower melting temperature metal. Design guidelines are set forth for reducing or eliminating the leakage of molten metal into the areas adjacent to the bondlines.

    Abstract translation: 用于形成封装装置的系统和方法包括在两个基板之间的环境中密封装置的基本上气密的密封。 基本上气密的密封由两个金属层的合金形成，一个熔化温度低于另一个。 金属层可以沉积两个基底，以及形成在至少一个金属层下面的凸起特征。 两种金属可以在凸起特征的中点的任一侧上的至少两个位置中形成预定化学计量的合金。 可以通过使用与较低熔点金属相邻的有机润湿层来改善合金的形成。 阐述了设计准则，以减少或消除熔融金属泄漏到与粘接线相邻的区域。

    WAFER LEVEL HERMETIC BOND USING METAL ALLOY WITH RAISED FEATURE AND WETTING LAYER
    74.
    发明申请
    WAFER LEVEL HERMETIC BOND USING METAL ALLOY WITH RAISED FEATURE AND WETTING LAYER 有权
    使用金属合金加成的特征和湿润层的波浪水平粘结

    公开(公告)号：US20150266726A1

    公开(公告)日：2015-09-24

    申请号：US14194794

    申请日：2014-03-02

    Applicant: Innovative Micro Technology

    Inventor： Christopher S. GUDEMAN ,  Prosenjit Sen

    IPC: B81C1/00

    CPC classification number: B81C1/00269 ,  B81C1/00849 ,  B81C2203/019

    Abstract: Systems and methods for forming an encapsulated device include a substantially hermetic seal which seals a device in an environment between two substrates. The substantially hermetic seal is formed by an alloy of two metal layers, one having a lower melting temperature than the other. The metal layers may be deposited two substrates, along with a raised feature formed under at least one of the metal layers. The two metals may form an alloy of a predefined stoichiometry in at least two locations on either side of the midpoint of the raised feature. The formation of the alloy may be improved by the use of an organic wetting layer adjacent to the lower melting temperature metal. Design guidelines are set forth for reducing or eliminating the leakage of molten metal into the areas adjacent to the bondlines.

    Abstract translation: 用于形成封装装置的系统和方法包括在两个基板之间的环境中密封装置的基本上气密的密封。 基本上气密的密封由两个金属层的合金形成，一个熔化温度低于另一个。 金属层可以沉积两个基底，以及形成在至少一个金属层下面的凸起特征。 两种金属可以在凸起特征的中点的任一侧上的至少两个位置中形成预定化学计量的合金。 可以通过使用与较低熔点金属相邻的有机润湿层来改善合金的形成。 阐述了设计准则，以减少或消除熔融金属泄漏到与粘接线相邻的区域。

    MEMS DUAL SUBSTRATE SWITCH WITH MAGNETIC ACTUATION
    75.
    发明申请
    MEMS DUAL SUBSTRATE SWITCH WITH MAGNETIC ACTUATION 有权

    公开(公告)号：US20210202196A1

    公开(公告)日：2021-07-01

    申请号：US17200954

    申请日：2021-03-15

    Applicant: Innovative Micro Technology

    Inventor： Christopher S. GUDEMAN ,  Marin SIGURDSON

    IPC: H01H50/00 ,  H01H50/54 ,  H01H50/64 ,  H01H50/36 ,  H01H49/00

    Abstract: Systems and methods for forming a magnetostatic MEMS switch include forming a movable beam on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. A shunt bar on the movable plate may close the switch when lowered onto the contacts. The switch may generally be closed, with the shunt bar resting on the contacts. However, a magnetically permeable material may also be inlaid into the movable plate. The switch may then be opened by placing either a permanent magnet or an electromagnet in proximity to the switch.

    LOW COST WAFER BONDING METHOD
    76.
    发明申请
    LOW COST WAFER BONDING METHOD 审中-公开

    公开(公告)号：US20190382260A1

    公开(公告)日：2019-12-19

    申请号：US16433357

    申请日：2019-06-06

    Applicant: Innovative Micro Technology

    Inventor： Jeffery F. SUMMERS

    IPC: B81C1/00 ,  B32B7/12 ,  B32B18/00 ,  B32B37/12 ,  B81B7/00

    Abstract: The invention is directed to an inexpensive method for bonding two wafers. The method uses an adhesive material disposed between two handling sheets and stamped with a plurality of through holes. The through holes are registered with the locations of devices formed on a substrate. The adhesive material is placed between to two substrates, around the devices, and cured.

    Contact material for MEMS devices
    77.
    发明授权
    Contact material for MEMS devices 有权

    公开(公告)号：US10388468B2

    公开(公告)日：2019-08-20

    申请号：US15355608

    申请日：2016-11-18

    Applicant: Innovative Micro Technology

    Inventor： Suresh Sampath ,  Christopher S. Gudeman

    IPC: H01H1/00 ,  B81C1/00

    Abstract: A method for forming electrical contacts on a semiconductor substrate is disclosed. The method includes forming a first metal layer over the substrate, and forming a layer of a second metal oxide by sputter deposition of a second metal in an oxygen environment. In some embodiments, the second metal oxide may be ruthenium dioxide, and the first metal layer may be gold, copper, platinum, silver or aluminum.

    THERMOCOMPRESSION BONDING WITH RAISED FEATURE
    80.
    发明申请
    THERMOCOMPRESSION BONDING WITH RAISED FEATURE 审中-公开
    具有提升特性的热压粘合

    公开(公告)号：WO2017213652A1

    公开(公告)日：2017-12-14

    申请号：PCT/US2016/036593

    申请日：2016-06-09

    Applicant: INNOVATIVE MICRO TECHNOLOGY

    Inventor： GUDEMAN, Christopher ,  RUBEL, Paul

    IPC: H01L21/447 ,  H01L21/02 ,  H01L21/50 ,  H01L21/603

    Abstract: A method for bonding two substrates is described, comprising providing a first and a second silicon substrate, providing a raised feature on at least one of the first and the second silicon substrate, forming a layer of gold on the first and the second silicon substrates, and pressing the first substrate against the second substrate, to form a thermocompression bond around the raised feature. The high initial pressure caused by the raised feature on the opposing surface provides for a hermetic bond without fracture of the raised feature, while the complete embedding of the raised feature into the opposing surface allows for the two bonding planes to come into contact. This large contact area provides for high strength.

    Abstract translation: 描述了用于键合两个衬底的方法，包括提供第一硅衬底和第二硅衬底，在第一硅衬底和第二硅衬底中的至少一个上提供凸起特征，在其上形成金层 第一和第二硅衬底，并且将第一衬底压靠在第二衬底上，以围绕凸起特征形成热压缩结合。 由相对表面上的凸起特征引起的高初始压力提供密封结合而不使凸起特征断裂，而将凸起特征完全嵌入相对表面允许两个接合平面接触。 这个大的接触面积提供了很高的强度。

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