Abstract:
A method for forming through substrate vias (TSVs) in a non-conducting, glass substrate is disclosed. The method involves patterning a silicon template substrate with a plurality of lands and spaces, bonding a slab or wafer of glass to the template substrate, and melting the glass so that it flows into the spaces formed in the template substrate. The template substrate may then be removed to leave a plurality of TSVs in the glass slab or wafer.
Abstract:
Systems and methods for forming an encapsulated device include a substantially hermetic seal which seals a device in an environment between two substrates. The substantially hermetic seal is formed by an alloy of two metal layers, one having a lower melting temperature than the other. The metal layers may be deposited two substrates, along with a raised feature formed under at least one of the metal layers. The two metals may form an alloy of a predefined stoichiometry in at least two locations on either side of the midpoint of the raised feature. The formation of the alloy may be improved by the use of an organic wetting layer adjacent to the lower melting temperature metal. Design guidelines are set forth for reducing or eliminating the leakage of molten metal into the areas adjacent to the bondlines.
Abstract:
Systems and methods for forming an encapsulated device include a substantially hermetic seal which seals a device in an environment between two substrates. The substantially hermetic seal is formed by an alloy of two metal layers, one having a lower melting temperature than the other. The metal layers may be deposited two substrates, along with a raised feature formed under at least one of the metal layers. The two metals may form an alloy of a predefined stoichiometry in at least two locations on either side of the midpoint of the raised feature. The formation of the alloy may be improved by the use of an organic wetting layer adjacent to the lower melting temperature metal. Design guidelines are set forth for reducing or eliminating the leakage of molten metal into the areas adjacent to the bondlines.