Abstract:
A ferroelectric memory and a method for operating a ferroelectric memory are disclosed. The ferroelectric memory includes a ferroelectric memory cell having a ferroelectric capacitor characterized by a maximum remanent charge, Q max . A write circuit receives a data value having more than two states for storage in the ferroelectric capacitor. The write circuit measures Q max for the ferroelectric capacitor, determines a charge that is a fraction of the measured Q max to be stored in the ferroelectric capacitor, the fraction being determined by the data value. The write circuit causes a charge equal to the fraction times Q max to be stored in the ferroelectric capacitor. A read circuit determines a value stored in the ferroelectric capacitor by measuring a charge stored in the ferroelectric capacitor, measuring Q max for the ferroelectric capacitor, and determining the data value from the measured charge and the measured Q max .
Abstract:
A memory having a plurality of ferroelectric memory cells connected between first and second bit lines is disclosed. A read circuit is also connected between the first and second bit lines. A word select circuit selects one of the ferroelectric memory cells and generates a potential on the first bit line indicative of a value stored in the selected one of the plurality of ferroelectric memory cells. Each ferroelectric memory cell includes a ferroelectric capacitor and a variable impedance element having an impedance between first and second switch terminals that is determined by a signal on a control terminal. The ferroelectric capacitor is connected between the control terminal and the first switch terminal. First and second gates connect the ferroelectric memory cell to the bit lines in response to the word select circuit selecting that ferroelectric memory cell.
Abstract:
A memory having a plurality of ferroelectric memory cells connected between first and second bit lines is disclosed. A read circuit is also connected between the first and second bit lines. A word select circuit selects one of the ferroelectric memory cells and generates a potential on the first bit line indicative of a value stored in the selected one of the plurality of ferroelectric memory cells. Each ferroelectric memory cell includes a ferroelectric capacitor and a variable impedance element having an impedance between first and second switch terminals that is determined by a signal on a control terminal. The ferroelectric capacitor is connected between the control terminal and the first switch terminal. First and second gates connect the ferroelectric memory cell to the bit lines in response to the word select circuit selecting that ferroelectric memory cell.
Abstract:
A mobile communication terminal capable of position determination, including: a base station information recorder recording detailed base station information corresponding to at least one base station; a base station signal receiver receiving base station signal information from a reference base station at a predetermined interval; a base station information reader reading the detailed base station information with respect to a base station corresponding to the received base station signal information, from the base station information recorder; and a position determiner determining a position of the mobile communication terminal by using the received base station signal information and the read detailed base station information.
Abstract:
A method and system for determining a location of a mobile communication device for an improvement of a positioning through a self-learning processing algorithm. In the method and system for determining a location of a mobile communication device, a self-learning processing unit batch processes GPS-based positioning results accumulated in a first self-learning database, and generates a sector direction value. Also, the self-learning processing unit generates optimized environment parameters, which is necessary for wireless network-based positioning, and basic data for a pattern matching, and updates the optimized environment parameters and basic data in a second self-learning database. Accordingly, the system for determining a location of a mobile communication device performs a positioning through a pattern matching method by using results accumulated in the second self-learning database.
Abstract:
Provided is a method and system for determining a position of a mobile communication device in a mobile communication network, the method including the steps of: dividing an area covered by the mobile communication network into a plurality of grids and collecting a first base station signal information with respect to each of the divided grids; storing and maintaining the collected first base station signal information in association with position information of the grids in a database; measuring a second base station signal information received by the mobile communication device; comparing the second base station signal information with the first base station signal information to find position information corresponding to the second base station signal information in the database; and generating final position information of the mobile communication device based on the position information found in the database.
Abstract:
A method for determining a position of a mobile terminal in a mobile network including a plurality of base stations (BSs) and repeaters (REs) is provided. In the method, a plurality of BS signal data is received, and the BS signal data includes propagation delay time data and is transmitted from the BSs to the mobile terminal. The BSs or the REs corresponding to the respective BS signal data is determined on the basis of the propagation delay time data. Vector data related to the BSs or REs is generated on the basis of geographic data corresponding to the determined BSs and REs. Position data of the mobile terminal is generated according to the generated vector data. In the step of generating the vector data, a progression order of vectors related to the BSs and the REs is determined according to the BS signal data. The vectors are sequentially determined according to the determined vector progression order. The vectors starts at a BS or a RE currently communicating with the mobile terminal. The present invention makes it possible to utilize the existing BS signal data as they are, to determine a position of a mobile terminal more accurately, and to continuously provide accurate position data regardless of a change in a mobile network.
Abstract:
A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers (18) are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer (18) to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer (18) to a temperature between 100 DEG C and 300 DEG C for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer (24).
Abstract:
A ferroelectric memory and a method for operating a ferroelectric memory are disclosed. The ferroelectric memory includes a ferroelectric memory cell having a ferroelectric capacitor characterized by a maximum remanent charge, Qmax. A write circuit receives a data value having more than two states for storage in the ferroelectric capacitor. The write circuit measures Qmax for the ferroelectric capacitor, determines a charge that is a fraction of the measured Qmax to be stored in the ferroelectric capacitor, the fraction being determined by the data value. The write circuit causes a charge equal to the fraction times Qmax to be stored in the ferroelectric capacitor. A read circuit determines a value stored in the ferroelectric capacitor by measuring a charge stored in the ferroelectric capacitor, measuring Qmax for the ferroelectric capacitor, and determining the data value from the measured charge and the measured Qmax.
Abstract:
A memory cell and memories constructed from that memory cell are disclosed. A memory according to the present invention includes a ferroelectric capacitor, a charge source and a read circuit. The charge source receives a data value to be stored in the ferroelectric capacitor. The charge source converts the data value to a remanent charge to be stored in the ferroelectric capacitor and causes that remanent charge to be stored in the ferroelectric capacitor. The read circuit determines a charge stored in the ferroelectric capacitor. The data value has more than three distinct possible states, and the determined charge has more than three determined values. The memory also includes a reset circuit that causes the ferroelectric capacitor to enter a predetermined known reference state of polarization.