ANALOG FERROELECTRIC MEMORY WITH IMPROVED TEMPERATURE RANGE
    71.
    发明申请
    ANALOG FERROELECTRIC MEMORY WITH IMPROVED TEMPERATURE RANGE 审中-公开
    具有改进的温度范围的模拟铁电存储器

    公开(公告)号:WO2018044815A1

    公开(公告)日:2018-03-08

    申请号:PCT/US2017/048958

    申请日:2017-08-28

    Abstract: A ferroelectric memory and a method for operating a ferroelectric memory are disclosed. The ferroelectric memory includes a ferroelectric memory cell having a ferroelectric capacitor characterized by a maximum remanent charge, Q max . A write circuit receives a data value having more than two states for storage in the ferroelectric capacitor. The write circuit measures Q max for the ferroelectric capacitor, determines a charge that is a fraction of the measured Q max to be stored in the ferroelectric capacitor, the fraction being determined by the data value. The write circuit causes a charge equal to the fraction times Q max to be stored in the ferroelectric capacitor. A read circuit determines a value stored in the ferroelectric capacitor by measuring a charge stored in the ferroelectric capacitor, measuring Q max for the ferroelectric capacitor, and determining the data value from the measured charge and the measured Q max .

    Abstract translation: 公开了一种铁电存储器和一种用于操作铁电存储器的方法。 铁电存储器包括具有铁电电容器的铁电存储器单元,铁电电容器的特征在于最大剩余电荷Q max max。 写电路接收具有多于两个状态的数据值以存储在铁电电容器中。 写入电路测量铁电电容器的Q max,确定将被存储在铁电电容器中的测量Q max的一小部分的电荷,该部分由 数据值。 写入电路使得等于分数倍数Q max的电荷被存储在铁电电容器中。 读电路通过测量存储在铁电电容器中的电荷,测量强电介质电容器中存储的值,测量铁电电容器的Q max,并根据测量的电荷和测量的Q < 子>最大

    FERROELECTRIC MEMORIES BASED ON ARRAYS OF AUTONOMOUS MEMORY BITS
    72.
    发明申请
    FERROELECTRIC MEMORIES BASED ON ARRAYS OF AUTONOMOUS MEMORY BITS 审中-公开
    基于自动存储器阵列的电磁记忆

    公开(公告)号:WO2011156525A3

    公开(公告)日:2012-04-12

    申请号:PCT/US2011039677

    申请日:2011-06-08

    CPC classification number: G11C11/22

    Abstract: A memory having a plurality of ferroelectric memory cells connected between first and second bit lines is disclosed. A read circuit is also connected between the first and second bit lines. A word select circuit selects one of the ferroelectric memory cells and generates a potential on the first bit line indicative of a value stored in the selected one of the plurality of ferroelectric memory cells. Each ferroelectric memory cell includes a ferroelectric capacitor and a variable impedance element having an impedance between first and second switch terminals that is determined by a signal on a control terminal. The ferroelectric capacitor is connected between the control terminal and the first switch terminal. First and second gates connect the ferroelectric memory cell to the bit lines in response to the word select circuit selecting that ferroelectric memory cell.

    Abstract translation: 公开了具有连接在第一和第二位线之间的多个铁电存储单元的存储器。 读取电路也连接在第一和第二位线之间。 字选择电路选择铁电存储单元之一,并在第一位线上生成表示存储在所选择的多个铁电存储单元中的值的电位。 每个铁电存储单元包括铁电电容器和可变阻抗元件,其具有由控制端子上的信号确定的第一和第二开关端子之间的阻抗。 铁电电容器连接在控制端子和第一开关端子之间。 响应于选择该铁电存储单元的字选择电路,第一和第二栅极将铁电存储单元连接到位线。

    FERROELECTRIC MEMORIES BASED ON ARRAYS OF AUTONOMOUS MEMORY BITS
    73.
    发明申请
    FERROELECTRIC MEMORIES BASED ON ARRAYS OF AUTONOMOUS MEMORY BITS 审中-公开
    基于自动存储器阵列的电磁记忆

    公开(公告)号:WO2011156525A2

    公开(公告)日:2011-12-15

    申请号:PCT/US2011/039677

    申请日:2011-06-08

    CPC classification number: G11C11/22

    Abstract: A memory having a plurality of ferroelectric memory cells connected between first and second bit lines is disclosed. A read circuit is also connected between the first and second bit lines. A word select circuit selects one of the ferroelectric memory cells and generates a potential on the first bit line indicative of a value stored in the selected one of the plurality of ferroelectric memory cells. Each ferroelectric memory cell includes a ferroelectric capacitor and a variable impedance element having an impedance between first and second switch terminals that is determined by a signal on a control terminal. The ferroelectric capacitor is connected between the control terminal and the first switch terminal. First and second gates connect the ferroelectric memory cell to the bit lines in response to the word select circuit selecting that ferroelectric memory cell.

    Abstract translation: 公开了一种具有连接在第一和第二位线之间的多个铁电存储单元的存储器。 读取电路也连接在第一和第二位线之间。 字选择电路选择铁电存储单元之一,并在第一位线上产生表示存储在所选择的多个铁电存储单元中的值的电位。 每个铁电存储单元包括铁电电容器和可变阻抗元件,其具有由控制端子上的信号确定的第一和第二开关端子之间的阻抗。 铁电电容器连接在控制端子和第一开关端子之间。 响应于选择该铁电存储单元的字选择电路,第一和第二栅极将铁电存储单元连接到位线。

    MOBILE COMMUNICATION TERMINAL CAPABLE OF POSITION DETERMINATION AND METHOD OF DETERMINING POSITION IN THE MOBILE COMMUNICATION TERMINAL
    74.
    发明申请
    MOBILE COMMUNICATION TERMINAL CAPABLE OF POSITION DETERMINATION AND METHOD OF DETERMINING POSITION IN THE MOBILE COMMUNICATION TERMINAL 审中-公开
    移动通信终端,位置确定和移动通信终端中确定位置的方法

    公开(公告)号:WO2007111400A1

    公开(公告)日:2007-10-04

    申请号:PCT/KR2006/002403

    申请日:2006-06-22

    CPC classification number: H04W64/00

    Abstract: A mobile communication terminal capable of position determination, including: a base station information recorder recording detailed base station information corresponding to at least one base station; a base station signal receiver receiving base station signal information from a reference base station at a predetermined interval; a base station information reader reading the detailed base station information with respect to a base station corresponding to the received base station signal information, from the base station information recorder; and a position determiner determining a position of the mobile communication terminal by using the received base station signal information and the read detailed base station information.

    Abstract translation: 一种能够进行位置确定的移动通信终端,包括:基站信息记录器,记录与至少一个基站对应的详细的基站信息; 基站信号接收机以预定间隔从参考基站接收基站信号信息; 基站信息读取器,从基站信息记录器读取相对于与所接收的基站信号信息对应的基站的详细基站信息; 以及位置确定器,其通过使用所接收的基站信号信息和所读取的详细基站信息来确定移动通信终端的位置。

    MOBILE COMMUNICATION DEVICE POSITIONING SYSTEM AND METHOD FOR ENHANCING POSITION MEASUREMENT BY SELF LEARNING ALGORITHM
    75.
    发明申请
    MOBILE COMMUNICATION DEVICE POSITIONING SYSTEM AND METHOD FOR ENHANCING POSITION MEASUREMENT BY SELF LEARNING ALGORITHM 审中-公开
    移动通信设备定位系统和通过自学习算法增强位置测量的方法

    公开(公告)号:WO2007043752A1

    公开(公告)日:2007-04-19

    申请号:PCT/KR2006/003682

    申请日:2006-09-15

    CPC classification number: H04W64/00 G01S5/0252

    Abstract: A method and system for determining a location of a mobile communication device for an improvement of a positioning through a self-learning processing algorithm. In the method and system for determining a location of a mobile communication device, a self-learning processing unit batch processes GPS-based positioning results accumulated in a first self-learning database, and generates a sector direction value. Also, the self-learning processing unit generates optimized environment parameters, which is necessary for wireless network-based positioning, and basic data for a pattern matching, and updates the optimized environment parameters and basic data in a second self-learning database. Accordingly, the system for determining a location of a mobile communication device performs a positioning through a pattern matching method by using results accumulated in the second self-learning database.

    Abstract translation: 一种用于通过自学习处理算法确定移动通信设备的位置以改善定位的方法和系统。 在用于确定移动通信设备的位置的方法和系统中,自学习处理单元批量处理累积在第一自学习数据库中的基于GPS的定位结果,并且生成扇区方向值。 此外,自学习处理单元生成对于无线网络定位所必需的优化环境参数和用于模式匹配的基本数据,并且在第二自学习数据库中更新优化的环境参数和基本数据。 因此,用于确定移动通信设备的位置的系统通过使用累积在第二自学习数据库中的结果通过模式匹配方法执行定位。

    SYSTEM AND METHOD FOR DETERMINING POSITION OF MOBILE COMMUNICATION DEVICE BY GRID-BASED PATTERN MATCHING ALGORITHM
    76.
    发明申请
    SYSTEM AND METHOD FOR DETERMINING POSITION OF MOBILE COMMUNICATION DEVICE BY GRID-BASED PATTERN MATCHING ALGORITHM 审中-公开
    用于基于格式的图案匹配算法确定移动通信设备的位置的系统和方法

    公开(公告)号:WO2006031035A1

    公开(公告)日:2006-03-23

    申请号:PCT/KR2005/002979

    申请日:2005-09-09

    CPC classification number: G01S5/0252

    Abstract: Provided is a method and system for determining a position of a mobile communication device in a mobile communication network, the method including the steps of: dividing an area covered by the mobile communication network into a plurality of grids and collecting a first base station signal information with respect to each of the divided grids; storing and maintaining the collected first base station signal information in association with position information of the grids in a database; measuring a second base station signal information received by the mobile communication device; comparing the second base station signal information with the first base station signal information to find position information corresponding to the second base station signal information in the database; and generating final position information of the mobile communication device based on the position information found in the database.

    Abstract translation: 提供了一种用于确定移动通信网络中的移动通信设备的位置的方法和系统,该方法包括以下步骤:将由移动通信网络覆盖的区域划分为多个网格并收集第一基站信号信息 相对于每个分开的网格; 与数据库中的网格的位置信息相关联地存储和维护所收集的第一基站信号信息; 测量由所述移动通信设备接收的第二基站信号信息; 将所述第二基站信号信息与所述第一基站信号信息进行比较,以查找与所述数据库中的所述第二基站信号信息对应的位置信息; 以及基于在数据库中找到的位置信息生成移动通信设备的最终位置信息。

    SYSTEM AND METHOD FOR DETERMINING POSITION OF MOBILE TERMINAL
    77.
    发明申请
    SYSTEM AND METHOD FOR DETERMINING POSITION OF MOBILE TERMINAL 审中-公开
    用于确定移动终端位置的系统和方法

    公开(公告)号:WO2006031004A1

    公开(公告)日:2006-03-23

    申请号:PCT/KR2005/000319

    申请日:2005-02-03

    CPC classification number: H04W64/00 G01S5/10

    Abstract: A method for determining a position of a mobile terminal in a mobile network including a plurality of base stations (BSs) and repeaters (REs) is provided. In the method, a plurality of BS signal data is received, and the BS signal data includes propagation delay time data and is transmitted from the BSs to the mobile terminal. The BSs or the REs corresponding to the respective BS signal data is determined on the basis of the propagation delay time data. Vector data related to the BSs or REs is generated on the basis of geographic data corresponding to the determined BSs and REs. Position data of the mobile terminal is generated according to the generated vector data. In the step of generating the vector data, a progression order of vectors related to the BSs and the REs is determined according to the BS signal data. The vectors are sequentially determined according to the determined vector progression order. The vectors starts at a BS or a RE currently communicating with the mobile terminal. The present invention makes it possible to utilize the existing BS signal data as they are, to determine a position of a mobile terminal more accurately, and to continuously provide accurate position data regardless of a change in a mobile network.

    Abstract translation: 提供了一种用于确定移动终端在包括多个基站(BS)和中继器(RE)的移动网络中的位置的方法。 在该方法中,接收多个BS信号数据,并且BS信号数据包括传播延迟时间数据,并从BS发送到移动终端。 基于传播延迟时间数据来确定对应于各个BS信号数据的BS或RE。 基于与确定的BS和RE相对应的地理数据生成与BS或RE相关的矢量数据。 根据生成的矢量数据生成移动终端的位置数据。 在生成向量数据的步骤中,根据BS信号数据确定与BS和RE相关的向量的进行顺序。 根据确定的载体进展顺序依次确定载体。 向量从目前与移动终端通信的BS或RE开始。 本发明使得可以将现有BS信号数据原样使用,更准确地确定移动终端的位置,并且连续地提供精确的位置数据,而不管移动网络的变化如何。

    METHOD FOR RESTORING THE RESISTANCE OF INDIUM OXIDE SEMICONDUCTORS AFTER HEATING WHILE IN SEALED STRUCTURES
    78.
    发明申请
    METHOD FOR RESTORING THE RESISTANCE OF INDIUM OXIDE SEMICONDUCTORS AFTER HEATING WHILE IN SEALED STRUCTURES 审中-公开
    在密封结构中加热后氧化物半导体电阻的恢复方法

    公开(公告)号:WO1998029902A1

    公开(公告)日:1998-07-09

    申请号:PCT/US1996020669

    申请日:1996-12-27

    CPC classification number: H01L28/60 H01L21/76886 H01L28/55

    Abstract: A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers (18) are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer (18) to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer (18) to a temperature between 100 DEG C and 300 DEG C for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer (24).

    Abstract translation: 当半导体器件制造期间氧化铟电阻层(18)经受高温退火步骤时,抵消所遇到的电阻率增加的方法。 该方法利用恢复退火步骤,其在高温退火步骤已经使电阻率增加之后将氧化铟层(18)返回到其原始电阻率。 回收退火包括将电阻层(18)加热至100℃至300℃的温度一段取决于退火温度的时间。 即使当氧化铟层被密封在电介质层(24)下时也观察到恢复。

    CMOS analog memories utilizing ferroelectric capacitors

    公开(公告)号:US09324405B2

    公开(公告)日:2016-04-26

    申请号:US14498911

    申请日:2014-09-26

    Abstract: A memory cell and memories constructed from that memory cell are disclosed. A memory according to the present invention includes a ferroelectric capacitor, a charge source and a read circuit. The charge source receives a data value to be stored in the ferroelectric capacitor. The charge source converts the data value to a remanent charge to be stored in the ferroelectric capacitor and causes that remanent charge to be stored in the ferroelectric capacitor. The read circuit determines a charge stored in the ferroelectric capacitor. The data value has more than three distinct possible states, and the determined charge has more than three determined values. The memory also includes a reset circuit that causes the ferroelectric capacitor to enter a predetermined known reference state of polarization.

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