公开(公告)号：WO1997035339A1

公开(公告)日：1997-09-25

申请号：PCT/US1997001880

申请日：1997-02-06

Applicant: RADIANT TECHNOLOGIES, INC.

Inventor： RADIANT TECHNOLOGIES, INC. ,  EVANS, Joseph, T., Jr. ,  BOYER, Leonard, O.

IPC: H01L21/70

CPC classification number: H01L27/11502 ,  H01L28/55 ,  Y10S148/014

Abstract: A method for fabricating an integrated circuit having at least one integrated circuit component (14) fabricated in a silicon substrate (12) and a second device (30) that is to be fabricated on a silicon oxide layer (16) that covers the integrated circuit component (14). The integrated circuit component (14) has a terminal that is to be connected to a corresponding terminal on the second device (30). The second device (30) includes an electrode structure (35) in contact with a dielectric component that includes a layer (33) of ferroelectric material. In the method of the present invention, a boundary layer comprising non-conducting polysilicon (17) is deposited over the silicon oxide layer (16). The electrode structure (35) is then fabricated by depositing one or more layers over the boundary layer (17). The ferroelectric layer (33) is then deposited over the electrode structure (35) and etched to provide the dielectric component. The boundary layer is then removed utilizing an etchant that etches silicon oxide much slower than polysilicon.

公开(公告)号：WO1998005074A1

公开(公告)日：1998-02-05

申请号：PCT/US1997013082

申请日：1997-07-25

Applicant: RADIANT TECHNOLOGIES, INC.

Inventor： RADIANT TECHNOLOGIES, INC. ,  EVANS, Joseph, T., Jr.

IPC: H01L29/76

CPC classification number: H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/75 ,  H01L29/516

Abstract: A ferroelectric memory cell (200) for storing information. The information is stored in the remnant polarization of a ferroelectric dielectric layer (213) by setting the direction of the remnant polarization. The ferroelectric memory cell (200) is designed to store the information at a temperature less than a first temperature. The memory cell (200) includes top and bottom contacts that sandwich the dielectric layer (213) which includes a ferroelectric material having a Curie point greater than the first temperature and less than 400 degrees C. The dielectric layer (213) is encapsulated in an oxygen impermeable material such that the encapsulating layer (221) prevents oxygen from entering or leaving the dielectric layer (213). One of the contacts typically includes a platinum electrode (210). The other contact may include a similar electrode or a semiconductor layer having electrodes spaced apart thereon.

Abstract translation: 一种用于存储信息的铁电存储单元（200）。 通过设定残留极化的方向，将信息存储在铁电介质层（213）的剩余极化中。 铁电存储单元（200）被设计为在小于第一温度的温度下存储信息。 存储单元（200）包括夹住介电层（213）的顶部和底部触点，该介电层包括具有大于第一温度且低于400℃的居里点的铁电材料。电介质层（213）被封装在 不透氧材料，使得封装层（221）防止氧气进入或离开电介质层（213）。 一个触点通常包括铂电极（210）。 另一个接触可以包括具有间隔开的电极的类似电极或半导体层。

公开(公告)号：WO2018044815A1

公开(公告)日：2018-03-08

申请号：PCT/US2017/048958

申请日：2017-08-28

Applicant: RADIANT TECHNOLOGIES, INC.

Inventor： EVANS, Joseph, T., Jr. ,  WARD, Calvin, B.

IPC: G11C11/22 ,  G11C11/16 ,  G11C11/4096 ,  G11C11/419 ,  G11C11/56

Abstract: A ferroelectric memory and a method for operating a ferroelectric memory are disclosed. The ferroelectric memory includes a ferroelectric memory cell having a ferroelectric capacitor characterized by a maximum remanent charge, Q max . A write circuit receives a data value having more than two states for storage in the ferroelectric capacitor. The write circuit measures Q max for the ferroelectric capacitor, determines a charge that is a fraction of the measured Q max to be stored in the ferroelectric capacitor, the fraction being determined by the data value. The write circuit causes a charge equal to the fraction times Q max to be stored in the ferroelectric capacitor. A read circuit determines a value stored in the ferroelectric capacitor by measuring a charge stored in the ferroelectric capacitor, measuring Q max for the ferroelectric capacitor, and determining the data value from the measured charge and the measured Q max .

Abstract translation: 公开了一种铁电存储器和一种用于操作铁电存储器的方法。 铁电存储器包括具有铁电电容器的铁电存储器单元，铁电电容器的特征在于最大剩余电荷Q max max。 写电路接收具有多于两个状态的数据值以存储在铁电电容器中。 写入电路测量铁电电容器的Q max，确定将被存储在铁电电容器中的测量Q max的一小部分的电荷，该部分由 数据值。 写入电路使得等于分数倍数Q max的电荷被存储在铁电电容器中。 读电路通过测量存储在铁电电容器中的电荷，测量强电介质电容器中存储的值，测量铁电电容器的Q max，并根据测量的电荷和测量的Q < 子>最大

公开(公告)号：WO2000058806A3

公开(公告)日：2000-10-05

申请号：PCT/US2000/008186

申请日：2000-03-27

Applicant: RADIANT TECHNOLOGIES, INC.

Inventor： EVANS, Joseph, T., Jr.

IPC: H01L21/02 ,  H01L21/8246 ,  H01L27/115 ,  H01L29/51

Abstract: A ferroelectric memory cell (200) for storing information. The information is stored in the remnant polarization of a ferroelectric dielectric layer (213) by setting the direction of the remnant polarization. The ferroelectric memory cell is designed to store the information at a temperature less than a first temperature. The memory cell includes top and bottom contacts that sandwich the dielectric layer (213) which includes a ferroelectric material having a Curie point greater than the first temperature and less than 400 °C. The dielectric layer (213) is encapsulated in an oxygen impermeable material such that the encapsulating layer (221) prevents oxygen from entering or leaving the dielectric layer (213). The memory also includes a hydrogen barrier layer (225) that inhibits the flow of oxygen to the top and bottom electrodes when the memory cell is placed in a gaseous environment containing hydrogen. In one embodiment of the invention, a hydrogen absorbing layer is included. In the preferred embodiment of the present invention, the hydrogen barrier layer (225) is constructed from a material that will also bind hydrogen ions.

公开(公告)号：WO1997027631A1

公开(公告)日：1997-07-31

申请号：PCT/US1997000863

申请日：1997-01-21

Applicant: RADIANT TECHNOLOGIES, INC.

Inventor： RADIANT TECHNOLOGIES, INC. ,  EVANS, Joseph, T., Jr. ,  WOMACK, Richard

IPC: H01L29/68

CPC classification number: H01L27/11502 ,  G11C11/22 ,  G11C11/5657

Abstract: A high density non volatile ferroelectric-based memory (500) based on ferroelectric FET operated in a two terminal write mode. Storage words may be constructed either from one or two bit storage cells based on a ferroelectric FET (10). A memory using either the one or two bit storage cells includes a plurality of word storage cells (502) organized into a rectangular array including a plurality of columns and rows. Each of the single bit memory cells (101) includes a pass transistor (115) and a ferroelectric storage element (116). All of the gates of the ferroelectric storage elements transistors are connected to a common gate electrode (122), and all of the source electrodes are connected to a common source electrode (121). If the memory is built as a two bit storage cell (300), all of the common source electrodes in each of the columns are connected electrically to a column electrode (504) corresponding to that column and all of the pass gates in each of the rows that are connected electrically to a row electrode (503) corresponding to that row.

Abstract translation: 基于以两端写入模式操作的铁电FET的高密度非挥发性铁电存储器（500）。 存储字可以由基于铁电FET（10）的一个或两个位存储单元构成。 使用一个或两个位存储单元的存储器包括组织成包括多个列和行的矩形阵列的多个字存储单元（502）。 单个位存储单元（101）中的每一个包括通过晶体管（115）和铁电存储元件（116）。 铁电存储元件晶体管的所有栅极连接到公共栅电极（122），并且所有源电极连接到公共源电极（121）。 如果存储器被构建为两位存储单元（300），则每个列中的所有公共源电极电连接到对应于该列的列电极（504），并且在每个列中的所有通孔 与行对应的行电极（503）电连接的行。

公开(公告)号：EP0946989A1

公开(公告)日：1999-10-06

申请号：EP97936225.0

申请日：1997-07-25

Applicant: RADIANT TECHNOLOGIES, INC.

Inventor： EVANS, Joseph, T., Jr.

IPC: H01L21 ,  H01L27 ,  H01L29

CPC classification number: H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/75 ,  H01L29/516

Abstract: A ferroelectric memory cell (200) for storing information. The information is stored in the remnant polarization of a ferroelectric dielectric layer (213) by setting the direction of the remnant polarization. The ferroelectric memory cell (200) is designed to store the information at a temperature less than a first temperature. The memory cell (200) includes top and bottom contacts that sandwich the dielectric layer (213) which includes a ferroelectric material having a Curie point greater than the first temperature and less than 400 degrees C. The dielectric layer (213) is encapsulated in an oxygen impermeable material such that the encapsulating layer (221) prevents oxygen from entering or leaving the dielectric layer (213). One of the contacts typically includes a platinum electrode (210). The other contact may include a similar electrode or a semiconductor layer having electrodes spaced apart thereon.

公开(公告)号：EP3482397A1

公开(公告)日：2019-05-15

申请号：EP17847321.1

申请日：2017-08-28

Applicant: Radiant Technologies, Inc.

Inventor： EVANS, Joseph, T., Jr. ,  WARD, Calvin, B.

IPC: G11C11/22 ,  G11C11/16 ,  G11C11/4096 ,  G11C11/419 ,  G11C11/56