-
公开(公告)号：KR1020120138903A
公开(公告)日：2012-12-27
申请号：KR1020110058328
申请日：2011-06-16
Applicant: 엘지이노텍 주식회사 , 고려대학교 산학협력단
IPC: H01L33/36
Abstract: PURPOSE: A light emitting device is provided to improve the light extraction efficiency of a light emitting device by forming a plasmon layer which emits light by a surface plasmon resonance on the surface of a light emitting structure to suppress internal total reflection. CONSTITUTION: A light emitting structure(120) is located on a substrate(110) and includes a first conductive type semiconductor layer(122), an active layer(124), and a second conductive type semiconductor layer(126). A plasmon layer(130A) is formed on the second conductive type semiconductor layer. A conductive layer(140) is formed on the Plasmon layer. A first electrode(152) is formed on the first conductive type semiconductor layer. A second electrode(154) is formed on the conductive layer.
Abstract translation: 目的：提供一种发光器件，用于通过在发光结构的表面上形成通过表面等离子体共振发光的等离子体膜来抑制内部全反射来提高发光器件的光提取效率。 构造：发光结构（120）位于基板（110）上，并且包括第一导电类型半导体层（122），有源层（124）和第二导电类型半导体层（126）。 在第二导电型半导体层上形成等离子体层（130A）。 导电层（140）形成在等离子体层上。 第一电极（152）形成在第一导电类型半导体层上。 第二电极（154）形成在导电层上。
-
Patent Agency Ranking
公开(公告)号：KR1020120027799A
公开(公告)日：2012-03-22
申请号：KR1020100089587
申请日：2010-09-13
Applicant: 고려대학교 산학협력단
IPC: H01L21/335 , H01L29/76
Abstract: PURPOSE: A method for enhancing electrical features of a semiconductor device of a hetero structure is provided to irradiate a proton on the rear side of a substrate, thereby enhancing performance of the semiconductor device. CONSTITUTION: A semiconductor device of a hetero structure includes a crystal layer growing on a substrate. A proton is irradiated on the rear side of the substrate. Crystal layers are selected by groups made of ZnO, GaAs, GaP, and GaN. The substrate is selected by groups made of Si, SiC, GaAs, and a sapphire substrate.
Abstract translation: 目的：提供一种用于增强异质结构的半导体器件的电特征的方法，用于照射衬底背面的质子，从而提高半导体器件的性能。 构成：异质结构的半导体器件包括在衬底上生长的晶体层。 在基板的背面照射质子。 晶体层由ZnO，GaAs，GaP和GaN制成的组选择。 衬底由Si，SiC，GaAs和蓝宝石衬底制成的组选择。
-
公开(公告)号：KR1020110093542A
公开(公告)日：2011-08-18
申请号：KR1020100036181
申请日：2010-04-20
Applicant: 고려대학교 산학협력단
CPC classification number: Y02B20/181 , C09K11/88 , H01L33/26 , H01L2251/301 , Y02B20/34
Abstract: PURPOSE: A selenide-based phosphor is provided to enable the synthesis of yellow color phosphor or a phosphor with the other light emitting wavelength through the change of a composition ratio and a synthesis process. CONSTITUTION: A selenide-based phosphor for a white light emitting device is represented by chemical formula 1: A_aB_bS_xSe_y:X. In chemical formula 1, A is selected from Be, Mg, Ca, Sr, and Ba; B is selected from Be, Al, Ga, In, Y, La, Gd, Zn, Cd, Sn, Sb, Tl, Pb, and Bi; X is selected from Eu, Ce, Cu, Ag, Al, Tb, Cl, Br, F, I, Mg, Pr, K, Na, and Mn; 1
Abstract translation: 目的：提供一种基于硒化物的荧光体，以通过组成比和合成过程的改变来合成黄色荧光体或具有其它发光波长的荧光体。 构成：用于白色发光器件的硒化物基荧光体由化学式1表示：A_aB_bS_xSe_y：X。 在化学式1中，A选自Be，Mg，Ca，Sr和Ba; B选自Be，Al，Ga，In，Y，La，Gd，Zn，Cd，Sn，Sb，Tl，Pb和Bi; X选自Eu，Ce，Cu，Ag，Al，Tb，Cl，Br，F，I，Mg，Pr，K，Na和Mn; 1 <= a <= 2,1 <= b <= 3,0 <= x <= 2，0 <= y <= 3; X为总摩尔数的0.0001-10摩尔％。
-
公开(公告)号：KR101005300B1
公开(公告)日：2011-01-04
申请号：KR1020070056331
申请日：2007-06-08
Applicant: 고려대학교 산학협력단
CPC classification number: Y02E10/50 , Y02P70/521
Abstract: 광가교 및 열가교성 표면개질용 랜덤공중합체를 이용한 태양전지의 제조방법이 제공된다.
본 발명에 따른 태양전지의 제조방법은 (a) 광가교 또는 열가교 가능한 랜덤공중합체를 태양전지의 기판 표면에 코팅하고 광가교 또는 열가교시켜 뉴트럴 매트릭스를 형성하는 단계; (b) 상기 뉴트럴 매트릭스의 상부면에 폴리스티렌-폴리메틸메타크릴레이트의 블록공중합체막을 적층하고, 어닐링함으로써 상 분리하는 단계; (c) 상기 상 분리된 블록공중합체막 중 폴리메틸메타크릴레이트 영역을 제거함으로써 나노패턴으로 이루어진 나노템플레이트를 형성하는 단계; 및 (d) 상기 나노템플레이트를 이용하여 상기 기판의 표면을 식각하는 단계를 포함하며, 상기 방법에 따르면 간단한 공정을 통해 태양전지의 기판 표면에 수직방향으로 복수개의 나노크기 홈을 규칙적으로 형성시킬 수 있어서 광전변환효율이 우수하고 태양전지에는 열에 의한 악영향을 감소시킬 수 있기 때문에 장수명을 갖는 태양전지를 제조할 수 있다.-
公开(公告)号：KR1020080107931A
公开(公告)日：2008-12-11
申请号：KR1020070056331
申请日：2007-06-08
Applicant: 고려대학교 산학협력단
CPC classification number: Y02E10/50 , Y02P70/521 , H01L31/04 , H01L31/18
Abstract: A method for preparing solar cell using photo-curable and thermo-curable random is provided to increase the quantum efficiency by forming the plurality of nano-size grooves regularly in a vertical direction to the silicon substrate surface of the solar battery. A method for preparing solar cell using photo-curable and thermo-curable random copolymer comprise the following steps: the step for forming the neutral matrix(120') by coating the photo-curable and thermo-curable random copolymer onto the substrate(150) surface of the solar battery; the step for laminating the block copolymer film(140) of the polystyrene - polymethyl methacrylate onto the upper side of the neutral matrix and annealing; the step for forming the nano template that is made of the nano pattern by removing the polymethyl methacrylate domain among the block copolymer film; the step for etching the surface of substrate using the nano template.
Abstract translation: 提供了使用光固化和可热固化的随机制备太阳能电池的方法，以通过在与太阳能电池的硅衬底表面垂直的方向上规则地形成多个纳米尺寸沟槽来提高量子效率。 使用光固化和热固化无规共聚物制备太阳能电池的方法包括以下步骤：通过将光固化和热固化无规共聚物涂覆到基材（150）上形成中性基质（120'）的步骤， 太阳能电池表面; 将聚苯乙烯 - 聚甲基丙烯酸甲酯的嵌段共聚物膜（140）层压到中性基体的上侧并退火的步骤; 通过除去嵌段共聚物膜中的聚甲基丙烯酸甲酯区域形成由纳米图案制成的纳米模板的步骤; 使用纳米模板蚀刻衬底的表面的步骤。
-
公开(公告)号：KR1020080101666A
公开(公告)日：2008-11-21
申请号：KR1020080035348
申请日：2008-04-16
Applicant: 고려대학교 산학협력단
IPC: C08F220/10 , C08F212/08 , H01L33/02 , B82Y10/00
Abstract: A photo-curable and thermo-curable random copolymer for surface modification and a method for preparing led by using the same is provided to reduce the manufacturing cost and time and to ensure excellent optical extraction efficiency and long lifetime by forming a plurality of nano-size grooves controlled with direction on the light emitting surface of LED. A photo-curable and thermo-curable random copolymer is represented by the following formula 1. In the formula, m+l+k=1. L+k=0.53~0.63, and n is an integer of 80~1,000. The molar fraction of the monomer including N3 within the main chain of the random copolymer is 0.02~0.04. The number average molecular weight of the random copolymer is 8,000 - 100,000.
Abstract translation: 提供用于表面改性的光固化和热固化无规共聚物及其使用方法，以减少制造成本和时间，并且通过形成多个纳米尺寸来确保优异的光学提取效率和长的寿命 在LED的发光表面上以方向控制的槽。 可光固化和热固化的无规共聚物由下式1表示。在该式中，m + 1 + k = 1。 L + k = 0.53〜0.63，n为80〜1000的整数。 在无规共聚物主链中包含N 3的单体的摩尔分数为0.02〜0.04。 无规共聚物的数均分子量为8000〜100,000。
-
-
-
-
-
Search Results
76
records
(took 0.029 seconds)
