Abstract:
A single type drying device comprises a spin chuck, a drying chamber, and a drying fluid line. The spin chuck supports one substrate and rotates the substrate. The drying chamber receives the spin chuck. The drying chamber comprises an inlet in which a drying fluid is received for drying the substrate; an outlet through which the drying fluid is discharged; and a vortex exhaust which discharges a vortex of the drying fluid caused by rotating the spin chuck. The drying fluid line is connected to the inlet of the drying chamber. Therefore, the present invention prevents the disturbance of the inflow of the drying fluid caused by the vortex. Rinse solutions and/or minute particles included in the vortex are discharged through the vortex exhaust.
Abstract:
PURPOSE: A chemical mechanical polishing(CMP) device is provided to predict erosion rate of a pad by measuring the vibration acceleration of a pad conditioner conditioning a CMP pad. CONSTITUTION: A swing(130) is separated from a table(110) in a regular distance. The table includes a CMP pad(120) to be conditioned. A connector(140) is rotated on the CMP pad around the swing. A rotation unit is rotated by being installed on the other end of the connector. A CMP pad conditioner conditions the CMP pad during rotation by being combined with the rotation unit.
Abstract:
본 발명은 화학 기계적 연마 장치에 관한 것으로, 상면에 플래튼 패드가 장착되어 회전 가능하게 설치된 연마 정반과; 프레임에 의해 지지되도록 상기 연마 정반의 하측에 설치된 베이스 플레이트와; 슬러리와 연마 입자를 배출하도록 상기 연마 정반의 중앙부로부터 하방으로 연장되고 상기 연마 정반과 함께 회전하도록 상기 연마 정반에 고정 설치된 드레인 파이프와; 상기 연마 정반에 내설되어 연마되고 있는 기판의 두께를 감지하는 기판두께 감지센서와; 상기 연마 정반의 회전에 따라 함께 회전하는 상기 기판두께 감지센서의 신호를 외부 기기로 전송하도록 상기 기판두께 감지센서로부터 연장된 신호선과 전기적으로 연결되고 상기 드레인 파이프에 설치된 슬립링과; 상기 베이스 플레이트에 고정된 구동 모터와; 상기 구동 모터의 회전 구동력을 상기 드레인 파이프에 전달하는 동력전달수단을; 포함하여 구성되어, 상기 드레인 파이프가 연마 정반 상의 슬러리와 연마 입자를 배출하는 데 사용될 뿐만 아니라, 상기 연마 정반을 회전 구동력을 전달하는 데에도 사용되고, 기판두께 감지센서의 신호선을 보호하는 데에도 사용되어, 부품수를 최소화하여 부품의 관리가 용이해지고 제조 비용을 보다 낮출 수 있도록 하는 화학 기계적 연마 장치를 제공한다.
Abstract:
PURPOSE: A chemical mechanical polishing pad conditioner and a manufacturing method thereof are provided to maximize lifetime of the conditioner by controlling the rate of wear of a cutting tip and to expand the time in which a pad illumination is maintained. CONSTITUTION: A plurality of cutting tips is separately formed on a substrate. The plurality of cutting tips is projected from the substrate toward upper side. The upper side of the cutting tip is parallel to the substrate. The cutting tip comprises a protrusion part and a cutting part. The cutting part is extended from the protrusion part. An area of the upper side of the cutting tip is 25um^2-10000um^2. Pad illumination is maintained to 2 to 10um in the conditioning process.
Abstract:
본 발명은 화학 기계적 연마 장치의 캐리어 헤드의 세정 유닛 및 이를 이용한 이동식 화학 기계적 연마 시스템에 관한 것으로, 기판을 파지하는 캐리어 헤드의 저면에 세정액을 하부로부터 상방으로 분사하고, 캐리어 헤드의 저면을 세척하고 낙하하는 세정액을 회수용기에 회수하고, 회수된 더러워진 세정액을 배수로를 통해 배출하도록 구성된 세정 유닛에 의하여, 캐리어 헤드의 저면에 기판을 파지하여 기판의 연마(polishing) 공정을 마친 후에 리테이너 링의 내측 가장자리를 포함하는 캐리어 헤드의 저면을 깨끗하게 세정함으로써, 캐리어 헤드에 파지되는 기판의 주변에는 연마 입자가 남지 않아 기판의 연마 공정을 항상 균일한 조건 하에서 이루어지도록 하여 매번 일정한 연마 품질을 얻을 수 있는 화학 기계적 연마 장치의 캐리어 헤드의 세정 유 닛 및 이를 이용한 이동식 화학 기계적 연마 시스템을 제공한다.
Abstract:
PURPOSE: The conditioner of a chemical-mechanical polishing system is provided to uniformly supply slurry to a substrate by evenly diffusing the slurry which is spread on the platen pad of a polishing table. CONSTITUTION: A platen pad is attached on the upper side of a polishing plate. A polishing head mounts a wafer and contacts with the upper side of the platen pad. A disk holder(112) fixes a conditioning disk. The conditioning disk cuts the surface of the platen pad. A piston rod(113) transfers vertical force to the disk holder. Housing protects a part or greater of the piston rod. A load sensor(140) measures the vertical force which is transferred to the disk holder from the piston rod. A carrier head is located on the upper side of the platen pad and grips the wafer.
Abstract:
PURPOSE: A cleaning unit of a carrier head of a chemical mechanical polishing apparatus and a transportable chemical mechanical polishing system using the same are provided to secure fixed polishing quality by eliminating slurry and polishing particles which are inserted in the edge of a retainer ring. CONSTITUTION: A plurality of nozzles(193) is fixed to a nozzle carrier(192). A plurality of nozzles sprays washing solution upward. The nozzle carrier is rotatively installed. A recovery container(191) collects the washing solution which falls after washing a carrier head. A discharging path discharges the washing solution which is collected to the recovery container. A housing is extended from the recovery container. A turning motor rotates the housing in a site opposite to the recovery container. A loading unit installs the substrate in the substrate carrier unit. An unloading unit unloads the substrate which is polished in a polishing and lapping plate from the substrate carrier unit.
Abstract:
PURPOSE: A transportable chemical mechanical polishing system and a substrate transfer method are provided to exclude a curved route for redirection by forming a carrier holder which transports a substrate carrier unit. CONSTITUTION: A first guide rail guides the movement of a substrate carrier unit(120) according to a prescribed first route(132). A second guide rail guides the movement of the substrate carrier unit according to a prescribed second route(131). The second guide rail is separated with the first guide rail. A carrier holder(190) transports the substrate carrier unit so that the substrate carrier unit comes and goes between the first route and the second route. A slurry supply unit supplies slurry to the upper part of a platen pad through a slurry supply pipe.
Abstract:
PURPOSE: A chemical-mechanical polishing system and a substrate transfer system thereof are provided to independently transfer each substrate by fundamentally preventing an entanglement phenomenon of wiring. CONSTITUTION: One or more polishing tables(110) are rotatively installed. A platen pad is installed on the upper side of the polishing table. A coil is installed according to a route(130) which is prescribed. The route comprises first route and second routes which are separated each other. The permanent magnet strip of an N-pole and an S-pole is separated with the coil while being opposite and arranged by turns. A substrate carrier unit(120) includes a carrier head and moves according to the route. A guide rail guides the movement of substrate carrier unit.
Abstract:
A chemical-mechanical polishing apparatus is provided to improve productivity and to save a time by directly spraying a cleaning solution inside a groove between a membrane and a retainer ring. A polishing head(100) fixes and moves a wafer. A membrane(110) is formed on a bottom surface of the polishing head, and is contacted with the wafer. A retainer ring(200) surrounds the membrane, is isolated from the membrane, and prevents separation of the wafer. A cleaning tube(300) is formed inside the retainer ring, and supplies a cleaning solution to a space between the membrane and the retainer ring. A tube hole is formed inside the retainer ring, and passes through an inner part of the retainer ring. The cleaning tube is formed inside the tube hole.