公开(公告)号：KR1020100097072A

公开(公告)日：2010-09-02

申请号：KR1020100016844

申请日：2010-02-24

Applicant: 서울대학교산학협력단

Inventor： 홍승훈 ,  김태현 ,  이주형

IPC: G01N27/414 ,  G01N33/20 ,  B82B1/00 ,  B82B3/00

Abstract: PURPOSE: A high-sensitivity and high-selectivity mercury ion sensing technique is provided to sense the mercury ion based on the spontaneous and selective oxidation-reduction reaction between the mercury ion and the carbon nanotube. CONSTITUTION: A mercury ion sensor comprises a substrate, a source electrode(13), a drain electrode(14), and a carbon nanotube transistor. The carbon nanotube is connected between the source electrode and the drain electrode. The carbon nanotube makes the oxidation-reduction reaction with the mercury ion. The carbon nanotube is the single-walled carbon nanotube. The mercury ion sensor detects the mercury ion by measuring the conductance change of the carbon nanotube by the oxidation-reduction reaction of the carbon nanotube and the mercury ion.

Abstract translation: 目的：提供高灵敏度和高选择性的汞离子感测技术，以便根据汞离子和碳纳米管之间的自发和选择性氧化还原反应来感测汞离子。 构成：汞离子传感器包括基板，源电极（13），漏电极（14）和碳纳米管晶体管。 碳纳米管连接在源电极和漏电极之间。 碳纳米管与汞离子进行氧化还原反应。 碳纳米管是单壁碳纳米管。 汞离子传感器通过碳纳米管和汞离子的氧化还原反应测量碳纳米管的电导变化来检测汞离子。

公开(公告)号：KR100975641B1

公开(公告)日：2010-08-17

申请号：KR1020080076585

申请日：2008-08-05

Applicant: 서울대학교산학협력단

Inventor： 홍승훈 ,  이주형 ,  김태현

IPC: H01L21/027 ,  B82B3/00 ,  B82Y40/00

CPC classification number: H01L29/16 ,  B82Y10/00 ,  H01L21/3081 ,  H01L21/3083 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/1606

Abstract: 그래핀막 위에 마스크 역할을 할 수 있는 산화물 나노선를 정렬하고 이온빔으로 식각한다. 이온빔 식각 후, 남은 산화물 나노선을 제거하여 나노 스케일의 그래핀 구조를 제조한다.
그래핀, 나노 구조, 산화물 나노선, 이온빔 식각

公开(公告)号：KR1020100019157A

公开(公告)日：2010-02-18

申请号：KR1020080078047

申请日：2008-08-08

Applicant: 서울대학교산학협력단

Inventor： 홍승훈 ,  김태경

IPC: H01L21/66 ,  H01J37/26 ,  B82Y35/00 ,  B82Y40/00

CPC classification number: G01Q70/14 ,  G01Q60/20

Abstract: PURPOSE: A method for forming a quantum well structure on SPM probes, the SPM probes including the quantum well structure and an SPM apparatus including the same are provided to realize nanoscale resolution for an optical imaging technique by tuning the SPM probes to exhibit an optical property without limitation by detectors. CONSTITUTION: A flexible cantilever beam(1) is prepared. A tip(2) is formed on the end part of the cantilever beam. A quantum well structure(3) is formed on the sharp end of the tip formed on the end part of the cantilever beam. An average diameter of the quantum well structure section in the horizontal direction is 10nm to 1um. The thickness of the quantum well structure in the vertical direction is 1nm to 1um.

Abstract translation: 目的：一种在SPM探针上形成量子阱结构的方法，提供了包括量子阱结构的SPM探针和包含该量子阱结构的SPM装置，以通过调谐SPM探针来实现光学成像技术的纳米级分辨率，以显示光学特性 不受检测器限制。 构成：制备了柔性悬臂梁（1）。 尖端（2）形成在悬臂梁的端部上。 量子阱结构（3）形成在形成在悬臂梁的端部上的尖端的尖端上。 水平方向的量子阱结构部分的平均直径为10nm〜1um。 量子阱结构在垂直方向的厚度为1nm至1um。

公开(公告)号：KR1020100015017A

公开(公告)日：2010-02-12

申请号：KR1020080075897

申请日：2008-08-04

Applicant: 서울대학교산학협력단

Inventor： 홍승훈 ,  박성영 ,  남궁선

IPC: B82B1/00 ,  B82B3/00 ,  B82Y30/00 ,  H01L29/775

CPC classification number: B82B3/00 ,  B82Y30/00 ,  B82Y40/00 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/773

Abstract: PURPOSE: A method for manufacturing cross-structures of nanostructures is provided to prepare cross-structures such as nanotubes or nanowires. CONSTITUTION: A method for manufacturing cross-structures of nanostructures comprises the steps of: providing a substrate(110); patterning a first mask layer(120) on a substrate; adsorbing first nanostructures(130) on surface regions of a substrate in which a first mask layer does not exist; removing the substrate from the first mask layer; patterning a second mask layer(140) on the substrate in which first nanostructureses are assembled; and adsorbing second nanostructures(150) on the surface regions of the substrate in which the second mask layer does not exist.

Abstract translation: 目的：制备纳米结构的交叉结构的方法，以制备纳米管或纳米线等交叉结构。 构成：制造纳米结构的交叉结构的方法包括以下步骤：提供衬底（110）; 在衬底上图案化第一掩模层（120）; 在第一掩模层不存在的衬底的表面区域上吸附第一纳米结构（130）; 从所述第一掩模层去除所述衬底; 在衬底上形成第二掩模层（140），其中组装第一纳米结构; 以及在不存在第二掩模层的基板的表面区域上吸附第二纳米结构（150）。