Abstract:
PURPOSE: A method for controlling a variable capacity condenser for a high voltage and a high current is provided to prevent damage to a condenser caused by a rapid increase in currents around a resonance point by controlling a connection method of the condenser and a sensor. CONSTITUTION: Damage to a condenser is prevented by controlling a connection method of a condenser and a sensor. The capacity of the condenser is controlled by monitoring current changes through the sensor so that a current more than a damage threshold of the condenser is not flowed. Damage to the condenser, caused by a rapid increase in currents around a resonance point, is prevented.
Abstract:
PURPOSE: A variable capacity condenser for high voltage and high current of a structure with multiple pole plates is provided to easily adjust a value, thereby obtaining a precise resonance point in any circumstances. CONSTITUTION: Two electrodes(10) are faced with each other. Intervals of the electrodes are broadened and narrowed by using a worm gear and a motor. An end part of an electrode is sharply formed. A high frequency condenser of high voltage and high current adjusts a high capacity value.
Abstract:
PURPOSE: A variable capacity condenser for high voltage and high current of single pole plate structure is provided to precisely control a capacity value of the condenser, thereby obtaining a precise resonance point in any circumstances. CONSTITUTION: Two electrodes(10) are faced with each other. Intervals(d) of the two electrodes are broadened and narrowed by using a worm gear and a motor. An insulator is inserted between the two electrodes. The motor is controlled by using a separate control device.
Abstract:
PURPOSE: A buried structure of a feed line is provided to divide concrete and the feed line, thereby easily controlling a location of the feed line. CONSTITUTION: A buried structure(1) of a feed line includes a lower member, a feed line, and an upper cover. The lower member is formed with a plurality of single layers. The feed line is arranged in a single layer unit. The feed line is composed of one or more lines which supply power.
Abstract:
PURPOSE: An on-chip laminated spiral inductor is provided to reduce the loss of a substrate by connecting laminated planar spiral inductors in parallel. CONSTITUTION: A multilayer wiring layer is formed on a semiconductor substrate. A spiral coil is formed on each layer of the multilayer wiring layer. A first vertical via(IVV) commonly connects one ends of the spiral coil in each layer. A second vertical via(OVV) commonly connects the other ends of the spiral coil in each layer. A wiring width of the spiral coil is wider from the upper layer to the lower layer.
Abstract:
PURPOSE: A loop type electromagnetic wave shielding apparatus including an automatic controller, a power supply apparatus and a current collector including the same, and an electromagnetic wave shielding method using a loop are provided to form an optimal shield condition by automatically controlling capacitance of a capacitor connected to a loop. CONSTITUTION: A leakage magnetic field generator(10) generates a leakage magnetic field to be shielded. The leakage magnetic field reduces through a closed loop(110). A magnetic field sensor part(121) senses a magnetic field generated from the closed loop. An EMF(Electromagnetic Field) size sensor(122) senses the size of a transmitted magnetic field. A capacitance calculating part(123) calculates capacitance of a capacitor for appropriately reducing the magnetic field measured from transmitted size information of the magnetic field. An on/off control signal of each switch in a switch array(124) is applied to each capacitor in order to control the capacitance of a capacitor array(125).
Abstract:
PURPOSE: A through silicon via capacitor, a manufacturing method thereof, and a 3D integrated circuit are provided to obtain high capacitance by using the silicon through electrode of a vertical structure. CONSTITUTION: A first substrate(100) includes a plurality of circuit boards(11) and a plurality of TSV(Through Silicon Via) capacitors(15). An intermediate layer(300) is formed between the plurality of circuit boards and includes a solder bump(330) and an underfill resin layer(310). The solder bump electrically connects the plurality of circuit boards. A second substrate(200) includes a plurality of active regions, a wiring region, and a TSV capacitor.
Abstract:
수동소자들이 적층된 반도체 칩은 기판, 활성층, 수동소자들 및 복수의 관통 실리콘 비아들을 포함한다. 활성층은 집적소자들, 전원 전압을 전달하는 파워 패턴들, 접지 전압을 전달하는 접지 패턴들 및 전기적 신호를 전달하는 신호 패턴들을 포함하며, 기판의 일면에 형성된다. 수동소자들은 기판의 타면에 적층된다. 복수의 관통 실리콘 비아들은 수동소자들 및 집적소자들이 전기적으로 연결되도록 기판을 관통하여 형성되며 이산화규소(SiO 2 )막으로 둘러싸인다. 복수의 관통 실리콘 비아들 중 일부는 수동소자들에 전원 전압을 전달하며, 복수의 관통 실리콘 비아들 중 나머지는 수동소자들에 접지 전압을 전달한다.
Abstract:
PURPOSE: A semiconductor chip with a passive device, a three dimensional multi chip including the same, and a three dimensional multi chip package including the same are provided to reduce power noise by electrically connecting the passive devices to the semiconductor chip. CONSTITUTION: A semiconductor chip with a passive device(130) includes a substrate, active layer, a passive device, and a plurality of through silicon vias. The active layer includes integrated devices, power patterns, ground patterns, and signal patterns(127) and is formed on one side of the substrate. A plurality of through silicon vias(114) passes through the substrate to electrically connect the passive device to the integrated device and is surrounded with SiO2. A part of through silicon vias transmits power voltage to the passive device. The remaining through silicon vias transmit the ground voltage to the passive devices.