公开(公告)号：DE69127644T2

公开(公告)日：1998-02-05

申请号：DE69127644

申请日：1991-03-01

Applicant: CANON KK

Inventor： YAMANOBE MASATO ,  SUGAWA SHIGETOSHI

IPC: H01L27/146 ,  H01L31/107

Abstract: A photoelectric transfer device comprises a light-absorbing layer which absorbs incident light to generate carriers a multiplying layer which multiplies the carriers and a light-shielding layer provided between the photoabsorbing layer and the multiplying layer.

公开(公告)号：DE68927581T2

公开(公告)日：1997-04-30

申请号：DE68927581

申请日：1989-10-18

Applicant: CANON KK

Inventor： YAMADA KATSUHIKO ,  SUGAWA SHIGETOSHI ,  MIZUTANI HIDEMASA

IPC: H01L27/146 ,  H04N1/028 ,  H04N5/335 ,  H04N5/353 ,  H04N5/369 ,  H04N5/374 ,  H04N5/378 ,  H01L31/18 ,  H01L27/144 ,  H01L31/0352

公开(公告)号：DE3751285D1

公开(公告)日：1995-06-14

申请号：DE3751285

申请日：1987-09-16

Applicant: CANON KK

Inventor： SUGAWA SHIGETOSHI ,  TANAKA NOBUYOSHI ,  SUZUKI TOSHIJI ,  ISHIZAKI AKIRA

IPC: H01L27/146 ,  H04N5/369 ,  H04N3/15

Abstract: In a photoelectric converter of the type having a plurality of photosensors and a plurality of signal output lines for picking up signals from the photosensors, wherein the signals are picked up through signal output terminals smaller in number than that of the signal output lines, the photoelectric converter is characterized by that the signal output lines each have switch means for switching the signal output line and connecting a desired signal output line to a signal output terminal.

公开(公告)号：DE3686807T2

公开(公告)日：1993-04-01

申请号：DE3686807

申请日：1986-11-13

Applicant: CANON KK

Inventor： SUGAWA SHIGETOSHI ,  TANAKA NOBUYOSHI ,  SUZUKI TOSHIJI ,  OHMI TADAHIRO ,  HARADA TADANORI

IPC: H01L27/146 ,  H04N3/15

Abstract: A photoelectric transducer device controls a potential of a control electrode region (4) of a semiconductor transistor through a capacitor to perform a storage operation for storing carriers generated upon light excitation of the control electrode region (4), a read operation for reading a signal from a main electrode region of the semiconductor transistor. A semiconductor region (6) having the same conductivity type as that of the main electrode region and having an impurity concentration lower than that of the main electrode region (5) is formed in the control electrode region. Control means is provided for controlling the potential of the control electrode through the capacitor to electrically neutralize the carriers and means for injecting carriers into the control electrode immediately prior to electrical neutralization of the carriers by the control means is provided.

公开(公告)号：DE3686807D1

公开(公告)日：1992-10-29

申请号：DE3686807

申请日：1986-11-13

Applicant: CANON KK

Inventor： SUGAWA SHIGETOSHI ,  TANAKA NOBUYOSHI ,  SUZUKI TOSHIJI ,  OHMI TADAHIRO ,  HARADA TADANORI

IPC: H01L27/146 ,  H04N3/15

Abstract: A photoelectric transducer device controls a potential of a control electrode region (4) of a semiconductor transistor through a capacitor to perform a storage operation for storing carriers generated upon light excitation of the control electrode region (4), a read operation for reading a signal from a main electrode region of the semiconductor transistor. A semiconductor region (6) having the same conductivity type as that of the main electrode region and having an impurity concentration lower than that of the main electrode region (5) is formed in the control electrode region. Control means is provided for controlling the potential of the control electrode through the capacitor to electrically neutralize the carriers and means for injecting carriers into the control electrode immediately prior to electrical neutralization of the carriers by the control means is provided.

公开(公告)号：CA2056087A1

公开(公告)日：1992-05-28

申请号：CA2056087

申请日：1991-11-25

Applicant: CANON KK

Inventor： MORISHITA MASAKAZU ,  HASHIMOTO SEIJI ,  SUGAWA SHIGETOSHI ,  OHZU HAYAO

IPC: H01L27/146 ,  H01L31/10 ,  H04N5/335 ,  H04N5/349 ,  H04N5/353 ,  H04N5/357 ,  H04N5/363 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374

Abstract: A photoelectric converting device provided with a control electrode area of a semiconductor of a first conductive type and at least two main electrode areas of a semiconductor of a second conductive type different from the first conductive type, and capable of accumulating photo-generated carriers in the control electrode area. The control electrode area becomes substantially depleted at the resetting operation.

公开(公告)号：DE3585516D1

公开(公告)日：1992-04-09

申请号：DE3585516

申请日：1985-12-24

Applicant: CANON KK

Inventor： TANAKA NOBUYOSHI ,  SUZUKI TOSHIJI ,  SUZUKI TSUNEO ,  OZAKI MASAHARU ,  SUGAWA SHIGETOSHI ,  SHINOHARA MAHITO

IPC: H01L27/146 ,  H04N3/15 ,  H01L27/14

Abstract: An image sensor device provided with a linear array of photoelectric converting elements each having a capacitor on a control electrode area of a semiconductor transistor is disclosed. The image sensor device is provided with means for sequentially selecting the photoelectric converting elements, and the potential of the control electrode area of the selected photoelectric converting element is controlled through said capacitor, thereby accumulating the carriers generated by photoexcitation in said control electrode area and reading a voltage generated according to the amount of carrier accumulation or dissipating thus accumulated carriers.

公开(公告)号：CA1289242C

公开(公告)日：1991-09-17

申请号：CA522797

申请日：1986-11-12

Applicant: CANON KK

Inventor： SUGAWA SHIGETOSHI ,  TANAKA NOBUYOSHI ,  SUZUKI TOSHIJI ,  OHMI TADAHIRO ,  HARADA TADANORI

IPC: H01L27/146 ,  H04N3/15 ,  H01L27/142

Abstract: A photoelectric transducer device controls a potential of a control electrode region of a semiconductor transistor through a capacitor to perform a storage operation for storing carriers generated upon light excitation of the control electrode region, a read operation for reading a signal from a main electrode region of the semiconductor transistor, the signal being controlled by a storage voltage generated by storage of the carriers, and a refresh operation for electrically neutralizing the carriers stored in the control electrode region. A semiconductor region having the same conductivity type as that of the main electrode region and having an impurity concentration lower than that of the main electrode region is formed in the control electrode region independently of the main electrode region. A capacitor is provided for controlling a potential of the floating control electrode. The photoelectric transducer device is adapted to control the potential of the floating control electrode through the capacitor to store carriers generated by electromagnetic waves incident on the semiconductor region. Control means is provided for controlling the potential of the control electrode through the capacitor to electrically neutralize the carriers and means is provided for injecting carriers into the control electrode immediately prior to electrical neutralization of the carriers by the control means.

公开(公告)号：CA1282172C

公开(公告)日：1991-03-26

申请号：CA522798

申请日：1986-11-12

Applicant: CANON KK

Inventor： SUGAWA SHIGETOSHI ,  TANAKA NOBUYOSHI ,  SUZUKI TOSHIJI

IPC: H01L27/14 ,  H01L27/146 ,  H04N5/335 ,  H04N5/374 ,  H04N5/378

Abstract: A photoelectric conversion device is provided including a plurality of phototransistors having a control electrode region of first conductivity type semiconductor for storing photo-excited carrier. The phototransistors also have at least two of first semiconductor region of second conductivity type different from the first one, second semiconductor region of the second conductivity type, and third semiconductor region of the second conductivity type. The device includes a signal read out connected electrically to each second semiconductor region, for reading an output signal based on the carrier stored on the control electrode region of the corresponding phototransistor. A peak signal reading means electrically connected to each of said third semiconductor region is provided for reading a peak output signal at each phototransistor on the basis of carrier stored in the control electrode region of each phototransistor. The device accordingly can read light information from a semiconductor region separately from the electrode region. The device can for example measure the incident light quantity or detect a peak value carried out in parallel as a store or read operation resulting in a high speed operation of the device. Further use of a circuit for processing light information based on a detected value enables a stable reading of the light information and a simplified design of a signal processing circuit at the following stage.

公开(公告)号：DE69935751D1

公开(公告)日：2007-05-24

申请号：DE69935751

申请日：1999-03-18

Applicant: CANON KK

Inventor： KOCHI TETSUNOBU ,  UENO ISAMU ,  KOIZUMI TORU ,  HIYAMA HIROKI ,  SUGAWA SHIGETOSHI ,  OGAWA KATSUHISA ,  SAKURAI KATSUHITO

IPC: H01L27/146 ,  H01L27/14 ,  H04N5/335 ,  H04N5/353 ,  H04N5/369 ,  H04N5/3745

Abstract: To achieve a high density, high resolution, or size reduction, there is provided a solid-state image pickup device having a plurality of photoelectric conversion elements formed in a semiconductor substrate, conductive layers formed on the semiconductor substrate between the neighboring photoelectric conversion elements via an interlayer layer, a first interlayer layer formed on the photoelectric conversion elements and conductive layers, a second interlayer layer formed on the first interlayer layer, and microlenses formed above the photoelectric conversion elements, wherein the refraction index of the first interlayer layer located above the photoelectric conversion elements is different from that of the second interlayer layer.