1.
    发明专利
    未知

    公开(公告)号:DE68928913D1

    公开(公告)日:1999-03-04

    申请号:DE68928913

    申请日:1989-10-18

    Applicant: CANON KK

    Abstract: A semiconductor commutator (Fig.4) which is constructed by providing a semiconductor region of a first conductivity type (3) and a semiconductor region of a second conductivity type, wherein there is provided a grain boundary (5) which is located near a junction surface (6) of the semiconductor region of the first conductivity type (3) and the semiconductor region of the second conductivity type so as not to cross said junction surface (6). The commutator may be manufactured by using a technique of selective nucleation and growth.

    MIS TRANSISTOR
    2.
    发明专利

    公开(公告)号:CA2054498C

    公开(公告)日:1997-05-20

    申请号:CA2054498

    申请日:1991-10-30

    Applicant: CANON KK

    Abstract: An MIS field effect transistor is provided with a first conduction type semiconductor layer having a channel portion, a second conduction type impurity region which forms opposite source and drain portion with the channel portion therebetween, and a gate electrode provided on the channel portion with a gate insulating film therebetween, wherein the channel and source portions respectively consist of semiconductors having different energy band gaps. The transistor enables holes to be smoothly moved between the source and channel portions, and has good saturation properties and a high source-drain endurance voltage.

    MIS TRANSISTOR
    4.
    发明专利

    公开(公告)号:CA2054498A1

    公开(公告)日:1992-05-01

    申请号:CA2054498

    申请日:1991-10-30

    Applicant: CANON KK

    Abstract: An MIS field effect transistor is provided with a first conduction type semiconductor layer having a channel portion, a second conduction type impurity region which forms opposite source and drain portion with the channel portion therebetween, and a gate electrode provided on the channel portion with a gate insulating film therebetween, wherein the channel and source portions respectively consist of semiconductors having different energy band gaps. The transistor enables holes to be smoothly moved between the source and channel portions, and has good saturation properties and a high source-drain endurance voltage.

    5.
    发明专利
    未知

    公开(公告)号:DE3125317A1

    公开(公告)日:1982-04-01

    申请号:DE3125317

    申请日:1981-06-27

    Applicant: CANON KK

    Abstract: A focussing plate for photographic cameras, etc. which is constructed with a multitude of micro-lens shaped curved surfaces arranged on a substrate surface at a space interval among them of from 5 to 30 mu m, and other curved surfaces arranged in the boundary spaces among these micro-lens shaped curved surfaces having a curvature just opposite to that of the micro-lens shaped curved surfaces.

    9.
    发明专利
    未知

    公开(公告)号:DE60211972T2

    公开(公告)日:2006-12-28

    申请号:DE60211972

    申请日:2002-02-21

    Applicant: CANON KK

    Abstract: The tiltable-body apparatus including a frame member, a tiltable body, and a pair of torsion springs having a twisting longitudinal axis. The torsion springs are disposed along the twisting longitudinal axis opposingly with the tiltable body being interposed, support the tiltable body flexibly and rotatably about the twisting longitudinal axis relative to the frame member, and include a plurality of planar portions, compliant directions of which intersect each other when viewed along a direction of the twisting longitudinal axis. A center of gravity of the tiltable body is positioned on the twisting longitudinal axis of the torsion springs.

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