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公开(公告)号：JP2001347665A
公开(公告)日：2001-12-18
申请号：JP2000173467
申请日：2000-06-09
Applicant: CASIO COMPUTER CO LTD
Inventor： NAKAMURA OSAMU
Abstract: PROBLEM TO BE SOLVED: To provide a reliable thermal ink jet printer head comprising heating elements coated with a protective film of an oxide insulation film exhibiting excellent adhesion and insulation and its manufacturing method. SOLUTION: The printer head 20 comprises a double structure individual wiring electrode 25 including a W-Ti based underlying electrode layer 23 and an upper electrode film 24 of Au and a common electrode 26 formed on the opposite sides of a Ta-Si-O-N based heater film 22 patterned on a substrate 21, and a double structure oxide insulation film 29 of a Ta-Si-O based high resistance layer 27 and an insulation layer 28 formed thereon. The high resistance layer 27 of the lower layer exhibits a high adhesion to Au of the upper electrode film 24 because oxygen concentration of mixture gas being introduced at the of filming is set at a low level of 2%. The insulation layer 28 of the upper layer exhibits a slightly lower adhesion to Au but exhibits high insulation because oxygen concentration at the of filming is set at 3%. The insulation layer 28 is superposed not on Au but on the high resistance layer 27 having high affinity.
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公开(公告)号：JP2001253074A
公开(公告)日：2001-09-18
申请号：JP2000066178
申请日：2000-03-10
Applicant: CASIO COMPUTER CO LTD
Inventor： KAMATA HIDEKI , NAKAMURA OSAMU , SAKURAOKA SATOSHI
IPC: B41J2/05
Abstract: PROBLEM TO BE SOLVED: To provide a thermal type ink jet printer head wherein a thin protection film having a good insulation property is uniformly attached thereon, thereby achieving a good heating efficiency. SOLUTION: In the print head 30, a thin film is formed, by using a rotary coating device, on a common electrode 39, a heating section 36, an individual wiring electrode 41 and a passivation film 34 by a film-forming coating liquid of a silicon compound or one to which a glassy material is added. The thin film is dried by a hot plate and is baked in a kiln to form a rotary coating film 48 for smoothing a step. After a surface inclination of a step in a hung-over portion formed on each of a side wall 39a of the common electrode 39 and a side wall 41a of the individual wiring electrode 41 is alleviated, an insulation film 49 of SiO2 having a uniform thickness is formed on the rotary coating film 48 by a spattering as a physical vapor growth method, a vacuum deposition method or a chemical vapor growth to form the two-layer structural protection film 50. It is possible to obtain a good insulation property in any portion by the insulation film 49 having the uniform thickness.
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公开(公告)号：JPH11162340A
公开(公告)日：1999-06-18
申请号：JP32760497
申请日：1997-11-28
Applicant: CASIO COMPUTER CO LTD , STANLEY ELECTRIC CO LTD
Inventor： NAKAMURA OSAMU , INOUE MASAKAZU , SUZUKI SHIGEO
Abstract: PROBLEM TO BE SOLVED: To improve efficiency, luminous energy of a cold cathode fluorescent lamp, to prolong the lifetime thereof, and to provide the remarkably excellent effect to the improvement of performance by laying the electron emitting material of the intermediate oxide of a rare earth group metal, which has the most excellent efficiency, at a high accuracy and a high purity inside diameter of a cold cathode of enamel originally having the excellent efficiency. SOLUTION: One surface of a flat board 1 is formed with a film of the electron emitting material of the rare earth group metal so as to form an electrode surface 1a, and thereafter, cutting, drawing, bending are performed so as to manufacture a hollow cold cathode 10 formed with an enamel type cold cathode having a cylindrical part, in which the electrode surface 1a is positioned in an inner diameter side. In this manufacturing method, the electron emitting material of the intermediate oxide of the rare earth group metal having the excellent efficiency is laid at a high accuracy in the cold cathode of enamel having the excellent efficiency so as to improve the performance of a device more.
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公开(公告)号：JPH08111170A
公开(公告)日：1996-04-30
申请号：JP26609394
申请日：1994-10-06
Applicant: CASIO COMPUTER CO LTD
Inventor： NAKAMURA OSAMU
IPC: G02F1/1335 , G02F1/13357 , H01J1/30 , H01J11/12 , H01J11/24 , H01J11/42 , H01J11/46 , H01J11/50 , H01J17/04 , H01J61/06 , H01J61/30
Abstract: PURPOSE: To provide an electron emitting electrode which can be driven by low voltage electric power supply without causing hunting in a discharge waveform. CONSTITUTION: An electron emitting electrode is formed in such a structure that an La0.7 Sr0.3 MnO3 thin film 14 is formed on an Ni board 12 through an NiO film 13. In this case, the La0.7 -Sr0.3 MnO3 thin film 14 is composed of a material having a structure of the oxygen element defective nonstoichiometric ratio, but has an excellent electron emitting characteristic. Hunting can be prevented from being caused in a discharge waveform. Therefore, a light emitting panel using this electron emitting electrode can be prevented from exerting adverse influence of a noise on an image of a display device such as an LCD.
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公开(公告)号：JPH0795754A
公开(公告)日：1995-04-07
申请号：JP25524093
申请日：1993-09-20
Applicant: CASIO COMPUTER CO LTD
Inventor： NAKAMURA OSAMU
Abstract: PURPOSE:To shift the state of a magnetic semiconductor layer between a ferromagnetic state and paramagnetic state by controlling the formation of magnetic polarons by impressing an electric field upon the magnetic semiconductor layer. CONSTITUTION:When a negative voltage is applied across a metallic electrode 3, the Fermi level of a magnetic semiconductor layer 1 becomes a variable energy level and, in the layer 1, the level changes downward in accordance with the magnitude of the applied voltage. As a result, the electrons existing at the donor level of the layer l below an insulating film 2 are discharged to a conduction land and only ionized donors exist at the donor level of the layer 1. Therefore, local magnetic polarons formed in the layer 1 disappear and the direction of a local magnetic moment at the part becomes random and the part changes from a ferromagnetic state to a paramagnetic state. The area which becomes the paramagnetic state in the layer 1 increases in the of direction of the depth as the absolute value of the negative voltage applied across the electrode 3 becomes larger.
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Patent Agency Ranking
公开(公告)号：JPH06302535A
公开(公告)日：1994-10-28
申请号：JP10727493
申请日：1993-04-12
Applicant: CASIO COMPUTER CO LTD
Inventor： OTANI TOMOHIKO , NAKAMURA OSAMU
IPC: H01L21/263 , H01L21/324
Abstract: PURPOSE:To provide a large radiation beam spot even when the diameter of electron beam is small when a semiconductor layer is annealed by irradiation with an electron beam. CONSTITUTION:A point-like electron beam 9 is made to fall on the surface of a semiconductor layer 3 at a low angle theta (presumably five degrees or less). Then, irradiation beam spot 14 enlarges. Therefore, even the diameter d of the point-like electron beam 9 is small, the irradiation beam spot 14 can be enlarged. As a result, when scanning speed, beam intensity, etc., are identical with those of irradiation in the vertical direction, temperature rising at a unit area and time can be smaller. Further, the time required for annealing, while the entire semiconductor layer 3 is scanned, can be shortened.
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公开(公告)号：JPH06111788A
公开(公告)日：1994-04-22
申请号：JP28090292
申请日：1992-09-24
Applicant: CASIO COMPUTER CO LTD
Inventor： NAKAMURA OSAMU
Abstract: PURPOSE:To provide an electron emitting electrode with its drive voltage stabilized, provide a fluorescent panel incorporating the electrode, and establish a method for manufacturing the fluorescent pane. CONSTITUTION:A fluorescent panel 10 includes an enclosed chamber 12 bounded by a frame glass plate 11, and a pair of electron emitting electrodes 1 are furnished in this chamber 12. Each electrode 1 is so structured that a surface electrode 3 and a protection film are laid one over another upon a metal board 2, wherein the protection film consists of oxide 5. The gas in the chamber 12 is exhausted by a vacuum pump 21 while an inert gas is injected from a gas source 18, followed by heating with a heating furnace 16, and meantime a voltage is impressed on the electrode 1 to generate electric discharge. By this discharge, the oxide 5 is sputtered, and the sputtered oxide 5 is exhausted to outside of the chamber 12 by the pump 21. Completion of this sputtering yields a fluorescent lamp which is equipped with electrode having got rid of oxide 5 and wherein the chamber 12 is filled with the inert gas.
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公开(公告)号：JPH06103966A
公开(公告)日：1994-04-15
申请号：JP27953592
申请日：1992-09-22
Applicant: CASIO COMPUTER CO LTD
Inventor： NAKAMURA OSAMU
Abstract: PURPOSE:To provide an electron emitting electrode intended to stabilize drive voltage, provide a fluorescent panel employing the aforesaid electrode, and also provide the manufacture of the fluorescent panel. CONSTITUTION:A fluorescent panel 10 has a sealed chamber 13 formed with a lower pane of glass 11 and an upper pane of glass 12, and the sealed chamber 13 is filled with inert gas. Paired electron emitting electrodes 1 are disposed within the sealed chamber 13. In each electron emitting electrode 1, each surface electrode 3 is laminated over a metallic substrate 2, and getter material 4 such as Al and the like is mixed with each surface electrode 3. Each oxide film 5 is formed over the surfaces of the electron emitting electrodes 1, when the electron emitting electrodes 1 are discharged with drive voltage applied, the surface electrodes 3 and the getter material 4 are sputtered so as to allow each oxide film 5 to be removed, and removed oxygen is absorbed by the getter material 4, so that the inside of the sealed chamber 13 can be purified.
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公开(公告)号：JPH05234753A
公开(公告)日：1993-09-10
申请号：JP7243092
申请日：1992-02-21
Applicant: CASIO COMPUTER CO LTD
Inventor： NAKAMURA OSAMU
Abstract: PURPOSE:To form a rare earth ortho ferrite thin film of high purity without requiring high temperature and high pressure conditions by heating organic solvent solution of rare earth nitrate compound applied to a substrate. CONSTITUTION:A solution of concentration of 0.2mol/l to 0.4mol/l is formed by dissolving Sm(NO3)3.6H2O and Fe(NO3)3.9H2O to ethanol. Meanwhile, the solution is applied all over a substrate by dropping and diffusing the solution by 1cc to a center part of a substrate consisting of quartz glass while rotating the substrate by a spinner. After the application, the substrate is mounted on a hot plate and heated to evaporate and dry the ethanol and to form an SnFeO3 thin film on the substrate. Thereby, it is possible to form a thin film of good purity without requiring the need for severe conditions of high temperature and high pressure.
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公开(公告)号：JPH01122106A
公开(公告)日：1989-05-15
申请号：JP27931787
申请日：1987-11-06
Applicant: CASIO COMPUTER CO LTD
Inventor： BABA HISAYA , NAKAMURA OSAMU
Abstract: PURPOSE:To inexpensively and easily manufacture a magnetic thin film element and to obtain preferable characteristics as a thin film inductance element by providing an axis of easy magnetization along a surface substantially parallel to the face of a polycrystalline gadolinium thin film thereon. CONSTITUTION:A magnetic thin film element 1 comprises a substrate 2 and a gadolinium thin film 3. The substrate 2 is formed, for example, of a semiconductor integrated circuit chip or the like covered with an insulator, such as silicon oxide or nitride on its surface or a heat resistant glass plate. The film 3 is polycrystalline, and formed on the substrate 2. The film 3 has lower Curie temperature than that of the single crystalline gadolinium, and has an axis of easy magnetization along the surface parallel to the surface of the film. Thus, it can be inexpensively and easily manufactured, and excellent characteristics as a thin film inductance element are obtained.
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