公开(公告)号：EP1627403A1

公开(公告)日：2006-02-22

申请号：EP03792002.2

申请日：2003-08-28

Applicant: INTEL CORPORATION

Inventor： MA, Qing ,  RAVI, Kramadhati ,  RAO, Valluri

IPC: H01H59/00

CPC classification number: H01P1/127 ,  H01H59/0009 ,  H01H2001/0052

公开(公告)号：EP1552610A1

公开(公告)日：2005-07-13

申请号：EP03764688.2

申请日：2003-07-11

Applicant: INTEL CORPORATION

Inventor： MA, Qing ,  SHIM, Dong

IPC: H03H9/02

CPC classification number: H03H9/0542 ,  H03H9/02779 ,  H03H9/6403

Abstract: Microelectromechanical system (MEMS) apparatus and methods for surface acoustic wave (SAW) switching are disclosed. The apparatus includes a piezoelectric substrate having spaced apart input and output SAW transducers. A MEMS switch is arranged between the input and output SAW transducers The MEMS switch has a deformable member in electromagnetic communication with one or more actuation electrodes formed on or above the substrate. The deformable member is deformable to mechanically contact the substrate to deflect or absorb a SAW generated by the input SAW transducer.

公开(公告)号：EP1356519A2

公开(公告)日：2003-10-29

申请号：EP01968251.7

申请日：2001-08-29

Applicant: INTEL CORPORATION

Inventor： HENAO, Maria ,  MU, Xiao-Chun ,  MA, Qing ,  VU, Quat ,  LI, Jian

IPC: H01L23/538

CPC classification number: H01L24/19 ,  H01L21/568 ,  H01L23/532 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/20 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/18162 ,  H01L2924/19041 ,  Y10T29/4935 ,  H01L2224/96 ,  H01L2224/82 ,  H01L2924/00

Abstract: A microelectronic package including a microelectronic die disposed within an opening in a microelectronic packaging core, wherein an encapsulation material is disposed within portions of the opening not occupied by the microelectronic die. Build-up layers of dielectric materials and conductive traces are then fabricated on the microelectronic die, the encapsulant material, and the microelectronic package core to form the microelectronic package.

公开(公告)号：EP1260019B1

公开(公告)日：2016-11-30

申请号：EP01908666.9

申请日：2001-01-22

Applicant: Intel Corporation

Inventor： MA, Qing ,  CHENG, Peng

IPC: H03H3/00 ,  H03H3/007 ,  G11B21/16 ,  G11B21/21

CPC classification number: H03H3/0077 ,  B81B3/007 ,  G11B5/484 ,  G11B21/16 ,  H03H9/24 ,  H03H9/2463 ,  H03H2009/0233

公开(公告)号：EP1317773B1

公开(公告)日：2013-12-25

申请号：EP01966655.1

申请日：2001-09-07

Applicant: Intel Corporation

Inventor： MA, Qing

IPC: H01L21/56 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L23/00 ,  H01L21/60

CPC classification number: H01L24/97 ,  H01L21/561 ,  H01L23/3121 ,  H01L23/49816 ,  H01L23/5389 ,  H01L23/564 ,  H01L24/19 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/13022 ,  H01L2224/16225 ,  H01L2224/20 ,  H01L2224/97 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2224/82 ,  H01L2224/05552 ,  H01L2924/00

公开(公告)号：EP1573762B1

公开(公告)日：2010-10-06

申请号：EP03787237.1

申请日：2003-12-03

Applicant: Intel Corporation

Inventor： ZIPPER, Eliav ,  MA, Qing

IPC: H01H1/00 ,  H01H9/54 ,  H01P1/12

CPC classification number: H01H9/542 ,  H01H1/0036 ,  H01H9/541 ,  H01H59/0009

公开(公告)号：EP1627403B1

公开(公告)日：2008-09-03

申请号：EP03792002.2

申请日：2003-08-28

Applicant: Intel Corporation

Inventor： MA, Qing ,  RAVI, Kramadhati ,  RAO, Valluri

IPC: H01H59/00

CPC classification number: H01P1/127 ,  H01H59/0009 ,  H01H2001/0052

公开(公告)号：EP1543615A2

公开(公告)日：2005-06-22

申请号：EP03754769.2

申请日：2003-09-17

Applicant: INTEL CORPORATION

Inventor： WANG, Li-Peng ,  MA, Qing ,  YANKOVICH, Israel ,  BUTLER, Richard

IPC: H03H3/02 ,  H03H9/17

CPC classification number: H03H3/02 ,  H03H9/02133 ,  H03H9/174 ,  H03H2003/023 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/49135 ,  Y10T29/49155 ,  Y10T29/49156

Abstract: A film bulk acoustic resonator formed on a substrate (710) includes a layer of piezoelectric material (735) having a first major surface, and a second major surface sandwiched between a first conductive (732) and a second conductive layer (736). The substrate on which the film bulk acoustic resonator is formed has an opening (750) therein which exposes the first conductive layer (732) of the film bulk acoustic resonator. The opening (750) is substantially in the shape of a parallelogram having a first pair of parallel sides (751, 752) and a second pair of parallel sides. One of the first pair of parallel sides makes an angle at other than 90 degrees with one of the second pair of parallel sides.

公开(公告)号：EP1529301A2

公开(公告)日：2005-05-11

申请号：EP03759192.2

申请日：2003-08-13

Applicant: INTEL CORPORATION

Inventor： MA, Qing

IPC: H01H61/00

CPC classification number: H01H1/0036 ,  H01H37/5409 ,  H01H2001/0042 ,  H01H2037/008

Abstract: A microelectromechanical system (MEMS) that includes a first electro-thermal actuator, a second electro-thermal actuator and a beam having a first side and a second side. The first electro-thermal actuator applies a force to the first side of the beam as current passes through the first electro-thermal actuator and the second electro-thermal actuator applies a force to the second side of the beam as current passes through the second electro-thermal actuator.

公开(公告)号：EP1464116A1

公开(公告)日：2004-10-06

申请号：EP02805205.8

申请日：2002-12-17

Applicant: INTEL CORPORATION

Inventor： WANG, Li-Peng ,  MA, Qing ,  RAO, Valluri

IPC: H03H9/17

CPC classification number: H03H9/174 ,  H03H3/02 ,  H03H2003/023 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/4908 ,  Y10T29/49156

Abstract: A film bulk acoustic resonator is formed on a substrate. The film bulk acoustic resonator includes a layer of piezoelectric material having a first surface proximate the substrate, and a second surface distal from the substrate. The first conductive layer deposited on the first surface of the piezoelectric material includes a first portion having a surface on a different plane than a surface associated with a second portion. A method for forming the device includes depositing a first portion of a first electrode, and a piezoelectric layer onto the substrate. The method includes removing a portion of the substrate under the piezoelectric layer and under the portion of the first electrode, and depositing a second portion of the first electrode onto the piezoelectric film layer and onto the first portion of the first electrode.