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公开(公告)号：JPS6318877B2
公开(公告)日：1988-04-20
申请号：JP9739880
申请日：1980-07-16
Applicant: SONY CORP
Inventor： MORI YOSHIFUMI , MATSUDA OSAMU
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公开(公告)号：JPS61225886A
公开(公告)日：1986-10-07
申请号：JP6718885
申请日：1985-03-29
Applicant: SONY CORP
Inventor： MATSUDA OSAMU
IPC: H01S5/00
Abstract: PURPOSE:To perform the function as a light source and a servo photodetector by providing a laser element and an oblique surface for reflecting a laser beam in a perpendicular direction to the surface of a semiconductor substrate on the substrate, and providing a photodiode around the oblique surface. CONSTITUTION:An oblique surface 2 for reflecting a laser beam in a direction perpendicular to a semiconductor substrate 1 is formed substantially at the center of the substrate 1, and photodiodes 12a-12d for forming a quadrant photodetectors 11 are formed around it. A securing surface 3 for mounting a laser element 6 is formed through the surface 2 and a V-shaped groove 4, and an APC photodiode 10 is formed at the rear portion. Then, this laser unit not only operates as a function of a light source of an optical head but operates as a function of a servo photodetector for detecting a returning beam 13a or 13b. Since the axis of the beam reflected on the surface 2 coincides with the center of the detector 11, the servo is accurately operated.
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公开(公告)号：JPS61203692A
公开(公告)日：1986-09-09
申请号：JP4520085
申请日：1985-03-07
Applicant: SONY CORP
Inventor： MATSUDA OSAMU
IPC: H01S5/00
Abstract: PURPOSE:To reflect the laser beam emitted from a semiconductor laser element by using inclined planes without deforming a distribution of luminous intensity of the beam by forming a minute groove on a surface of a semiconductor substrate and effecting the anisotropic etching of the surface of semiconductor substrate, while masking one side so as to form V-shaped inclined planes and the low laser element connecting plane. CONSTITUTION:An opening 3 of slit form is formed on a surface of an N-type semiconductor substrate 1 and a minute groove 4 is formed by etching. On one side of the groove 4. A photoresist film 5 (mask) remains and anisotropic etching is done to form the first inclined plane 6 by utilizing the difference in etching rate due to a difference in directions of crystals. A V-shaped groove 7 is formed at the lower end of the inclined plane 6 and the laser element connecting plane 9 extending from the upper end of the second inclined plane 8 to the surface of substrate 1 is formed. A P-I-N type photodiode 10, a solder layer 14 for bonding of a semiconductor laser element are formed and a semiconductor laser element 15 is bonded so that the laser beam emitting side 16 of it faces the inclined plane 6.
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公开(公告)号：JPS6066894A
公开(公告)日：1985-04-17
申请号：JP17542583
申请日：1983-09-22
Applicant: SONY CORP
Inventor： MATSUDA OSAMU , HORII SHINICHI , SATOU HIROMICHI
Abstract: PURPOSE:To enable the reduction of noise by multimodes and to contrive to facilitate the design by obtaining the reduction in astigmatic difference and the symmetry and stability of a far field pattern by a method wherein the titled device is enabled to have both properties of gain guide type and index guide type. CONSTITUTION:A current restricting region layer 17 serving as a photo absorbing layer having a smaller energy gap than a clad layer 15 and having the conductivity type different from that of the layer 15 is formed in the layer 15, a current concentration part of stripe form being formed by providing a lack part 17a of stripe form at the center of the layer 17 and thus constructing an internal stripe structure. The width W of the part 17a is selected at 3-5mum. Further, the difference in effective refractive index DELTAn(n-nS) when the refractive index of the part corresponding to the part 17a 9s (n), and the refractive index nS under the layer 17 is nS is 8X10 -2X10 .
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公开(公告)号：JPS59110186A
公开(公告)日：1984-06-26
申请号：JP21954282
申请日：1982-12-15
Applicant: Sony Corp
Inventor： MATSUDA OSAMU , SATOU HIROMICHI , MORI YOSHIFUMI
CPC classification number: H01S5/32 , H01S5/24 , H01S5/3202 , H01S5/3203
Abstract: PURPOSE:To manufacture easily and securely by a method wherein the surface orientation of a growing layer is selected by controlling the condition of vapor phase reaction, and a fixed bent part is formed in an active layer or a layer in the neighborhood thereof. CONSTITUTION:A groove 22 of V-shaped cross-section having the inner side surface along a [111] A crystal surface is formed in stripe through the main surface 21a of a III-V group compound semiconductor substrate 21, and a (Al, Ga) As compound, i.e., a III-V group semiconductor layer 23 is grown on the main surface 21a by an MO (metal organic) CVD method of thermal decomposition vapor growth. When the supply ratio R=CV/CIII of CV the constituent of the Vgroup element As to CIII the constituent of the III group elements Al and Ga is relatively large, the [111] A crystal surface is inherited as it is on the surface of the layer 23. When the thickness of this layer 23 is large, this groove is filled by the crystal growth from the [111] A surface on both sides, and thus flattened.
Abstract translation: 目的：通过控制气相反应条件选择生长层的表面取向的方法容易且可靠地制造，并且在有源层或其附近的层中形成固定的弯曲部。 构成：通过III-V族化合物半导体衬底21的主表面21a，沿着[111] A晶体表面的具有内侧表面的V形横截面的槽22形成条纹，并且（Al， Ga）作为化合物，即III-V族半导体层23通过热分解气相生长的MO（金属有机）CVD法在主表面21a上生长。 当CV的供给比R = CV / CIII时，V组元素的组成对于CIII，III族元素Al和Ga的成分相对较大，[111] A晶体表面在 层23.当该层23的厚度大时，通过两侧的[111] A表面的晶体生长填充该沟槽，从而变平。
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Patent Agency Ranking
公开(公告)号：JPS58201386A
公开(公告)日：1983-11-24
申请号：JP8444282
申请日：1982-05-19
Applicant: Sony Corp
Inventor： MATSUDA OSAMU , AYABE MASAAKI , DOUSEN MASASHI
CPC classification number: H01S5/2059 , H01S5/223 , H01S5/2232 , H01S5/2237 , H01S5/24 , H01S5/32308
Abstract: PURPOSE:To reduce the temperature dependency of threshold value current by a method wherein a dual hetero structured laser diode is provided on the central part of a concave of n-GaAs substrate while two homo-structured leak diodes are provided on both side shoulders. CONSTITUTION:An n-AlyGa1-yAs enclosed layer 12, an AlxGa1-yAs active layer 13, a p-AlyGa1-yAs enclosed layer 14, a p -GaAs cap layer 15 are laminated on an n-GaAs substrate 11 fixing striped SiO2 film 16, electrodes 17, 18 thereto. The active layer 13 is 0.15mum thick, x=0.12, the layers 12, 14 select y=0.53 and the layer 14 is added with Mg. At this time, within a concave 10, Mg is diffused crossing the layer 13, p-n junction J1 is formed near the boundary of the layers 12-13, J2 is formed crossing the layer 12 coming into the substrate 11 thus forming dual hetero laser diode 2 on the central part and homo-leak diodes 3 on both sides in parallel. In such a constitution, the change of threshold value current within the range of -20 deg.C-+50 deg.C may not exceed 5% in case of 20 deg.C subject to almost no fluctuation of optical output during constant current operation.
Abstract translation: 目的：通过一种方法来降低阈值电流的温度依赖性，其中在n-GaAs衬底的凹部的中心部分设置双异质结构的激光二极管，而在两侧设置两个同构的漏极二极管。 构成：将n-Al y Ga 1-yAs封装层12，Al x Ga 1-yAs有源层13，p-Al y Ga 1-yAs封装层14，ap + GaAs覆盖层15层合在n-GaAs衬底11上， SiO 2膜16，电极17,18。 有源层13的厚度为0.15μm，x = 0.12，层12,14选择y = 0.53，层14加入Mg。 此时，在凹面10内，Mg与层13交叉扩散，在层12-13的边界附近形成pn结J1，J2与形成在衬底11中的层12交叉形成，从而形成双异质激光二极管 2在中心部分，同侧漏极二极管3两侧并联。 在这样的结构中，在-20℃〜+ 50℃的范围内的阈值电流的变化在20度的情况下可能不超过5％，在恒定电流操作期间几乎不产生光输出的波动 。
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公开(公告)号：JPS58178581A
公开(公告)日：1983-10-19
申请号：JP6125882
申请日：1982-04-13
Applicant: Sony Corp
Inventor： AYABE MASAAKI , MATSUDA OSAMU , KANEKO KUNIO
IPC: H01L21/301 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/042
CPC classification number: H01S5/0202 , H01S5/0203
Abstract: PURPOSE:To improve the mass productivity of a semiconductor laser by forming overhangs at an epitaxial layer which contains an active layer, cleaving at thin overhangs, thereby enabling to set an accurate resonator length and facilitating the formation of a protecting film. CONSTITUTION:An N type A GaAs, an N type GaAs active layer, a P type A GaAs, and an N type GaAs are epitaxially formed at 12 on an N type GaAs substrate 11, and a P type parallel grooves 18 which reach an upper clad layer are arranged in the prescribed width at the prescribed interval. Strip resist masks are covered at an interval G, a neck 19a is formed at an interval corresponding to the resonator length of the laser, and the inner end 19b of the neck is disposed outside the grooves 18. Grooves 20 are formed by selectively etching, overhangs 12A of the layer 12 are formed, and the width W is formed equaly to the width of the groove 18 under the narrow part of the mask. Lines d1, d2 are cut along the cleavage surface in the desired resonator length across the grooves 18, a CVD Si3N4 protecting film is attached onto the substrate 11 of not finely pulverized state, and the substrate 11 is eventually divided along the lines (e), (f) to complete it. According to this structure, the formation of the protecting film is simple, and a semiconductor laser can be manufactured in mass production in a high yield.
Abstract translation: 目的：为了通过在包含有源层的外延层上形成突出来提高半导体激光器的批量生产率，在薄突出部分处断裂，从而能够设置精确的谐振器长度并有助于保护膜的形成。 构成：在N型GaAs衬底11上12处外延形成N型A GaAs，N型GaAs有源层，P型A GaAs和N型GaAs，并且在P型平行沟槽18上到达上层 包层以规定间隔排列成规定的宽度。 带状抗蚀剂掩模以间隔G覆盖，以对应于激光器的谐振器长度的间隔形成颈部19a，并且颈部的内端19b设置在凹槽18的外侧。凹槽20通过选择性蚀刻形成， 形成层12的突出部12A，并且宽度W形成为与掩模的窄部下方的槽18的宽度相等。 沿着切割面切割线d1，d2，沿着凹槽18在所需的谐振器长度上切割，将CVD Si 3 N 4保护膜附着到未被细碎的状态的基板11上，并且基板11最终沿着线（e）分开， ，（f）完成。 根据该结构，保护膜的形成简单，能够以高产率批量生产半导体激光器。
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公开(公告)号：JPS5667980A
公开(公告)日：1981-06-08
申请号：JP14477779
申请日：1979-11-08
Applicant: SONY CORP
Inventor： WATANABE SHIYOUZOU , MATSUDA OSAMU
IPC: H01L21/316 , H01S5/00 , H01S5/026 , H01S5/028
Abstract: PURPOSE:To prevent deterioration of an oscillating end face and to improve the laser characteristics by stabilizing an oscillation mode by a method wherein a protective film having a reflection factor distribution corresponding to an oscillation mode is vapored to an oscillation end face of a laser system. CONSTITUTION:A protective film 11 having a reflection factor distribution corresponding to an oscillation mode is attached to an oscillating end face 4a of a semiconductor laser system 1. And further, within a vapor growth atmosphere of SiO2, Si3N4, etc. the laser system 1 is made to oscillate and the protective film 11 as aforementioned is vapored on the oscillating end face. For example, the laser system having a constitution as shown in a figure is installed in a CVD furnace 9 taking Ar as a carrier gas, and in an atmosphere wherein SiH4 and N2O are supplied, the system 1 is made to oscillate in a fundamental mode. And only at an injection face 4a of a laser light 10 in an activated area 4, the SiO2 film having a film thickness distribution corresponding to the fundamental mode is made to vapor grow.
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79.发明专利
公开(公告)号：JP2005236683A
公开(公告)日：2005-09-02
申请号：JP2004043491
申请日：2004-02-19
Inventor： HONGO KAZUYASU , MATSUDA OSAMU , SHINO KUNINORI , HORIE KAZUYOSHI
IPC: H04L7/04 , H04B10/27 , H04B10/272 , H04B10/556 , H04B10/20 , H04B10/00
Abstract: PROBLEM TO BE SOLVED: To detect data by a clock signal from one and the same clock source in a system in which a star coupler connects a plurality of nodes.
SOLUTION: The clock source 3 having an optical transmitter 10 for outputting a clock signal in a prescribed wavelength is connected to the star coupler 4 to which the plurality of nodes 2 are connected. Each node 2 includes a phase comparator 12 for comparing the clock signal with a data signal in phase, a phase adjuster 13 for reception for adjusting the phase of a received data signal and a phase adjuster 14 for transmission for adjusting the phase of a data signal to be transmitted. The phase comparator 12 of each node 2 compares a data signal outputted from an optional node 2 among the plurality of nodes 2 with the clock signal output from the clock source 3 in phase, and the phase adjuster 13 for reception and the phase adjuster 14 for transmission make phases between the data signal and the clock signal coincide with each other.
COPYRIGHT: (C)2005,JPO&NCIPIAbstract translation: 要解决的问题：通过星型耦合器连接多个节点的系统中的同一个时钟源的时钟信号来检测数据。 解决方案：具有用于输出规定波长的时钟信号的光发送器10的时钟源3连接到与多个节点2连接的星形耦合器4。 每个节点2包括用于将时钟信号与同相数据信号进行比较的相位比较器12，用于调整接收数据信号的相位的接收的相位调整器13和用于调整数据信号的相位的发送的相位调整器14 被传送。 每个节点2的相位比较器12将从多个节点2中的可选节点2输出的数据信号与从时钟源3同相输出的时钟信号和用于接收的相位调整器13和相位调整器14进行比较 数据信号和时钟信号之间的传输使相位彼此一致。 版权所有（C）2005，JPO＆NCIPI
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公开(公告)号：JP2508515B2
公开(公告)日：1996-06-19
申请号：JP27366886
申请日：1986-11-17
Applicant: SONY CORP
Inventor： AKYAMA TOMI , MATSUDA OSAMU
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