公开(公告)号：JP2010206570A

公开(公告)日：2010-09-16

申请号：JP2009050200

申请日：2009-03-04

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SHINAGAWA HITOSHI ,  NODA MAKOTO ,  YAMAGISHI HIROYUKI

IPC: H03M13/41

CPC classification number: H03M13/4176 ,  H03M13/4169 ,  H03M13/6561

Abstract: PROBLEM TO BE SOLVED: To enable suppression of the size of memory which stores path selection information used in trace-back processes, and the latency accompanying decoding. SOLUTION: After xN-bit path selection information for radix -2 x is input with respect to a shift register 81 per clock and the amount corresponding to input k is stored, the amount of path selection information (kxN bits) is written at an address of a path memory RAM 82. In a trace-back circuit 83, the maximum likelihood path is selected, when a trace-back process takes place, based on the path selection information stored in the path memory RAM 82, and the value corresponding to each state on the maximum likelihood path is output as a decoding sequence. The present invention is applicable to receiving devices. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了能够抑制存储跟踪过程中使用的路径选择信息的存储器的大小以及伴随解码的等待时间。

解决方案：在每个时钟相对于移位寄存器81输入基数-2 x 的xN位路径选择信息之后，存储对应于输入k的量，路径选择量 在路径存储器RAM82的地址处写入信息（kxN位）。在追溯回路83中，基于存储在路径存储器RAM 82中的路径选择信息，当追溯处理发生时，选择最大似然路径 路径存储器RAM82，并且输出与最大似然路径上的每个状态相对应的值作为解码序列。 本发明可应用于接收设备。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010171165A

公开(公告)日：2010-08-05

申请号：JP2009011690

申请日：2009-01-22

Applicant: Sony Corp ,  ソニー株式会社

Inventor： NODA MAKOTO ,  NOMOTO AKIHIRO ,  KAWASHIMA NORIYUKI ,  NOMOTO KAZUMASA

IPC: H01L29/786 ,  H01L21/28 ,  H01L21/336 ,  H01L29/417 ,  H01L51/05

Abstract: PROBLEM TO BE SOLVED: To form a metal oxide film on the surface of a source-drain electrode without putting a damage into the surface of an organic gate insulation film and to restore a damaged layer after forming the metal oxide film on the source-drain electrode.
SOLUTION: The organic semiconductor device includes: source-drain electrodes 12 and 13 that are formed apart from each other on a substrate 11 having insulation properties on its surface; metal oxide films 14 and 15 formed on the surface of the source-drain electrodes 12 and 13; an organic semiconductor layer 16 that is formed on the substrate 11 and covers the metal oxide films 14 and 15; a gate insulation film 17 formed on the organic semiconductor layer 16; and a gate electrode 18 formed on the gate insulation film 17.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：在源 - 漏电极的表面上形成金属氧化物膜，而不会在有机栅极绝缘膜的表面上造成损伤，并且在形成金属氧化物膜之后恢复损伤层 源漏电极。 解决方案：有机半导体器件包括：源极 - 漏极电极12和13，其在其表面上具有绝缘性质的基板11上彼此分开形成; 形成在源 - 漏电极12和13的表面上的金属氧化物膜14和15; 形成在基板11上并覆盖金属氧化物膜14,15的有机半导体层16; 形成在有机半导体层16上的栅极绝缘膜17; 以及形成在栅极绝缘膜17上的栅电极18.权利要求：（C）2010，JPO＆INPIT

公开(公告)号：JP2009253440A

公开(公告)日：2009-10-29

申请号：JP2008096273

申请日：2008-04-02

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SHINAGAWA HITOSHI ,  NODA MAKOTO

IPC: H03M13/09 ,  H04L1/00

CPC classification number: H04L1/001 ,  H03M13/09 ,  H03M13/35 ,  H04L1/007 ,  H04L1/0072

Abstract: PROBLEM TO BE SOLVED: To obtain undetected error probability characteristics close to a limit value in a system using a CRC for multiple data having different code lengths. SOLUTION: To a transmission device 101, a generation polynomial for header data used when performing a CRC encoding processing on header data and a generation polynomial for sub-header data used when performing a CRC encoding processing on sub-header data, are set. The generation polynomials are switched from one to the other in accordance with the data to be processed by the CRC encoding processing. In the polynomial for the header data, the undetected error probability is lowered when the polynomial is used for 176-bit data, i.e., the same code length as the header data. As regards the polynomial for the sub-header data, the undetected error probability is lowered when the polynomial is used for 656-bit data, i.e., the same code length as the sub-header data. The present invention can be applied to a device using the CRC code. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：在具有不同代码长度的多个数据的CRC中获得接近限制值的未检测到的误差概率特性。 解决方案：对发送装置101，对对标题数据进行CRC编码处理时使用的标题数据的生成多项式和对子标题数据进行CRC编码处理时使用的子标题数据的生成多项式是： 组。 根据要通过CRC编码处理处理的数据，生成多项式从一个切换到另一个。 在标题数据的多项式中，当多项式用于176位数据时，即与标题数据相同的代码长度，未检测到的错误概率降低。 关于子标题数据的多项式，当多项式用于656位数据时，即未检测到的错误概率降低，即与子报头数据相同的代码长度。 本发明可以应用于使用CRC码的设备。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009171540A

公开(公告)日：2009-07-30

申请号：JP2008118548

申请日：2008-04-30

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SHINAGAWA HITOSHI ,  NODA MAKOTO ,  YAMAGISHI HIROYUKI ,  KONDO KEITARO

IPC: H04L1/00

CPC classification number: H04L1/0061 ,  H03M13/036 ,  H03M13/09 ,  H03M13/6516 ,  H04L1/0041

Abstract: PROBLEM TO BE SOLVED: To select much more suitable generator polynomials, and to switch the selected plurality of generator polynomials according to data to be processed for use. SOLUTION: The maximum/minimum hamming distance (Max.d min ) being the maximum value of the minimum hamming distance (d min ) in each code length (n) of a code with code length (n) having k bit information words to which r bit parity is added about the information word is found, and code length n whose Max.d min is changed is found, and the n range (n min ≤n≤n max ) is found. In the n range, generator polynomials (G(x)) satisfying d min =Max.d min all the time are found out by full retrieval, and the generator polynomial in which the number of items (w) and the undetected error capability (P ud ) of the code is the minimum is selected from among the G(x) found out by full retrieval. The plurality of generator polynomials selected in this way are switched and used according to the type or code length of data to be processed. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：选择更合适的生成多项式，并根据待处理的数据来切换所选择的多个生成多项式。

解决方案：每个代码长度（n）中最大/最小汉明距离（Max.d min ）是最小汉明距离（d min ）的最大值 找到具有相对于该信息字相加r位奇偶校验的k位信息字的代码长度（n）的代码，找到Max.d min 改变的代码长度n， 并且发现n范围（n min ≤n≤n max ）。 在n范围内，通过完全检索得到满足d min = Max.d min 的生成多项式（G（x）），生成多项式 从完全检索发现的G（x）中选择代码的数量（w）和未检测到的错误能力（P ud ）的最小值。 以这种方式选择的多个生成多项式根据要处理的数据的类型或代码长度进行切换和使用。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008294000A

公开(公告)日：2008-12-04

申请号：JP2008205158

申请日：2008-08-08

Applicant: Sony Corp ,  ソニー株式会社

Inventor： NODA MAKOTO ,  YAMADA JIRO ,  OKITA MASAMI

IPC: H01J1/304 ,  H01J9/02 ,  H01J31/12

Abstract: PROBLEM TO BE SOLVED: To provide an edge cold cathode field electron-emitting element which is superior in the convergence of the tracks of electrons emitted from an electron-emitting layer, and moreover, which is manufactured relatively easily. SOLUTION: The edge cold cathode field electron-emitting element includes the electron-emitting layer 13, an insulating layer 14, and a gate electrode layer 15 that are laminated in the order of increasing on a support 10, and an opening 16 extending from the gate electrode layer 15 to reach the surface of the support 10. The opening 16 is constituted of a first opening 15A formed on the gate electrode layer 15, a second opening 14A formed on the insulating layer 14, and a third opening 13A formed on the electron-emitting layer 13. The first opening 15A, second opening 14A, and third opening 13A communicate with each other. The thickness of the opening end of the third opening 13A, from which electrons are emitted, decreases directed toward the front end of the third opening 13A, and the lower edge of the opening end of the third opening 13A is retreated, as compared to the upper edge of the same. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种在从电子发射层发射的电子的轨迹的会聚中优异的边缘冷阴极场致发射电子发射元件，而且相对容易地制造。 解决方案：边缘冷阴极场发射电子发射元件包括电子发射层13，绝缘层14和栅极电极层15，其按照在支撑体10上增加的顺序层叠，并且开口16 从栅极电极层15延伸到达支撑体10的表面。开口16由形成在栅电极层15上的第一开口15A，形成在绝缘层14上的第二开口14A和第三开口13A 形成在电子发射层13上。第一开口15A，第二开口14A和第三开口13A彼此连通。 电子发射的第三开口13A的开口端的厚度相对于第三开口13A的前端减小，第三开口13A的开口端的下边缘相对于 上边缘相同。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2007066925A

公开(公告)日：2007-03-15

申请号：JP2005246932

申请日：2005-08-29

Applicant: Sony Corp ,  ソニー株式会社

Inventor： NODA MAKOTO

IPC: H01L21/28 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device wherein the malfunction of a transistor due to disconnection of wiring is prevented.
SOLUTION: In this semiconductor device, a gate wiring 12, a gate insulating film 13 and a source-drain wiring 14 are stacked on a substrate 11 in this order or in reverse order. At least either of the gate wiring 12 and the source-drain wiring 14 that is arranged on the side of the substrate 11 is formed of a stacked structure provided with a metal material layer 12a (14a) and a conductive organic material layer 12b (14b) or a carbon black layer.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种半导体器件，其中防止由于布线断开导致的晶体管的故障。 解决方案：在该半导体器件中，栅极布线12，栅极绝缘膜13和源极 - 漏极布线14以此顺序或以相反的顺序堆叠在基板11上。 布置在基板11一侧的栅极布线12和源极 - 漏极布线14中的至少任一个由具有金属材料层12a（14a）和导电有机材料层12b（14b）的堆叠结构形成 ）或炭黑层。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006180172A

公开(公告)日：2006-07-06

申请号：JP2004370796

申请日：2004-12-22

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SHINAGAWA HITOSHI ,  KONDO KEITARO ,  NODA MAKOTO

IPC: H03M13/09

Abstract: PROBLEM TO BE SOLVED: To select a generator polynomial G(x) suitable for a CRC encoding circuit.
SOLUTION: In the selecting method of a CRC generator polynomial, maximum and minimum hamming distance (Max.d
min ) is acquired which is maximum value of minimum hamming distance (d
min ) at each code length n of the codes with code length n added with a parity of r bit for information words, with the information word having k bit. The code length n is acquired in which Max.d
min changes, and the range of n (n
min ≤n≤n
max ) is acquired (S2). In the range of n, the generator polynomial (G(x)) which satisfies d
min =Max.d
min at all times is found by total searching (S3). The one of minimum number of terms (w) and non-detection error probability (P
ud ) of code is selected from among G (x) found by the total searching (S4).
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：选择适用于CRC编码电路的生成多项式G（x）。

解决方案：在CRC生成多项式的选择方法中，获取最小和最小汉明距离（Max.d min ），其为最小汉明距离的最大值（d min < / SB>），其中代码长度为n的码的每个码长n与信息字的r位的奇偶校验相加，信息字具有k位。 获取代码长度n，其中Max.d min 改变，并且n（n min ≤n≤n max ）的范围是 获得（S2）。 在n的范围内，通过总体搜索找到始终满足d min = Max.d min 的生成多项式（G（x））（S3）。 从总搜索找到的G（x）中选择代码的最小项数（w）和非检测误差概率（P ud ）中的一个（S4）。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2004335688A

公开(公告)日：2004-11-25

申请号：JP2003128861

申请日：2003-05-07

Applicant: Sony Corp ,  ソニー株式会社

Inventor： NODA MAKOTO

IPC: H01L51/05 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40

CPC classification number: H01L29/78696 ,  H01L51/001 ,  H01L51/0012 ,  H01L51/0052 ,  H01L51/0545

Abstract: PROBLEM TO BE SOLVED: To provide a field-effect transistor wherein carrier mobility can be improved.
SOLUTION: The field-effect transistor is provided with at least (A) a channel formation region 18 formed in a semiconductor layer 17, and (B) a gate electrode 12 which is arranged in face to face with the channel formation region 18 through a gate insulating layer 13. In the semiconductor layer 17, a semiconductor material layer 15 and conductive particles 16 are intermingled.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种可以提高载流子迁移率的场效应晶体管。 解决方案：场效应晶体管至少设置（A）形成在半导体层17中的沟道形成区域18，以及（B）与沟道形成区域面对面配置的栅电极12 在半导体层17中，混合有半导体材料层15和导电粒子16。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2003086080A

公开(公告)日：2003-03-20

申请号：JP2001279404

申请日：2001-09-14

Applicant: SONY CORP

Inventor： YAGI TAKAO ,  NODA MAKOTO ,  SHIMOI NORIHIRO

IPC: H01J1/304 ,  H01J29/04 ,  H01J31/12

Abstract: PROBLEM TO BE SOLVED: To provide a cold cathode field electron emission element with high convergency of emitted electrons in spite of simple structure. SOLUTION: This cold cathode field electron emission element is composed of a cathode electrode 11 installed on a support 10; an electron emission part 16 installed on the cathode electrode 11; and a gate electrode 13 arranged in the upper part of the electron emission part 16 and having an opening part 14, and when height from the field emission part 16 to the gate electrode 13 is represented by H, and the length of the widest part of an opening part 14 is represented by W, the relation of W/H

公开(公告)号：JP2002203473A

公开(公告)日：2002-07-19

申请号：JP2001328906

申请日：2001-10-26

Applicant: SONY CORP

Inventor： NODA MAKOTO ,  SAITO ICHIRO ,  URAZONO TAKENOBU

IPC: H01J9/02 ,  H01J1/304 ,  H01J31/12

Abstract: PROBLEM TO BE SOLVED: To provide a cold cathode field electron emission element capable of uniformly and easily forming an electron emission part having high electron emission efficiency. SOLUTION: This cold cathode field electron emission element has: a cathode electrode 11 formed on a support body 10; an insulating layer 12 formed on the support body 10 and the cathode electrode 11; a gate electrode 13 formed on the insulating layer 12; an opening part 14 formed in the gate electrode 13 and the insulating layer 12; and a plurality of electron emission parts 15A and 15B formed on the cathode electrode 11 located on the bottom of the opening part 14. In this case, the electron emission parts 15A and 15B are arranged on concentric opening part analogizing figures around the center part of the opening part 14, and the height of electron emission end parts 15a and 15b of the respective parts 15A and 15B increases as the electron emission parts are positioned close to the center part of the opening part 14.