公开(公告)号：DE69520538T2

公开(公告)日：2001-10-04

申请号：DE69520538

申请日：1995-10-17

Applicant: SONY CORP

Inventor： MINEGISHI MASAHIRO ,  INO MASUMITSU ,  KUNII MASAFUMI ,  URAZONO TAKENOBU ,  HAYASHI HISAO

IPC: G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

Abstract: Method of forming a high-quality polycrystalline semiconductor thin film having large grain sizes by laser annealing. First, a film formation step is carried out to grow a semiconductor layer on an insulating substrate under certain film formation conditions, thus forming a precursory film. This precursory film comprises clusters of microscopic crystal grains. Then, an irradiation step is carried out. That is, the precursory film is irradiated with a laser beam such as an excimer laser pulse. The crystal sizes are increased to change the precursory film into a polycrystalline semiconductor thin film. During the film formation step, a precursory film having a crystal grain size of more than 3 nm is formed at a temperature of 500 to 650 DEG C, for example, by LPCVD or APCVD. Under these conditions, the resulting polycrystalline precursory film is substantially free from hydrogen. During the irradiation step, a single pulse of excimer laser radiation is emitted.

公开(公告)号：DE69520538D1

公开(公告)日：2001-05-10

申请号：DE69520538

申请日：1995-10-17

Applicant: SONY CORP

Inventor： MINEGISHI MASAHIRO ,  INO MASUMITSU ,  KUNII MASAFUMI ,  URAZONO TAKENOBU ,  HAYASHI HISAO

IPC: G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

Abstract: Method of forming a high-quality polycrystalline semiconductor thin film having large grain sizes by laser annealing. First, a film formation step is carried out to grow a semiconductor layer on an insulating substrate under certain film formation conditions, thus forming a precursory film. This precursory film comprises clusters of microscopic crystal grains. Then, an irradiation step is carried out. That is, the precursory film is irradiated with a laser beam such as an excimer laser pulse. The crystal sizes are increased to change the precursory film into a polycrystalline semiconductor thin film. During the film formation step, a precursory film having a crystal grain size of more than 3 nm is formed at a temperature of 500 to 650 DEG C, for example, by LPCVD or APCVD. Under these conditions, the resulting polycrystalline precursory film is substantially free from hydrogen. During the irradiation step, a single pulse of excimer laser radiation is emitted.

公开(公告)号：DE69534667T2

公开(公告)日：2006-08-10

申请号：DE69534667

申请日：1995-10-17

Applicant: SONY CORP

Inventor： KADOTA HISASHI ,  INOUE YUKO ,  URAZONO TAKENOBU ,  KUNII MASAFUMI ,  NAKAMURA SHINJI

IPC: G02F1/136 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/786

Abstract: A color display device such as an active-matrix type liquid crystal display apparatus has a first substrate having pixel electrodes arranged in the form of the matrix, switching elements associated with respective pixel electrodes and color filters aligned with the respective pixel electrodes. The first substrate is composed of a laminate structure including, superposed in the mentioned sequence, a first layer having the switching elements, a second layer having the color filters, a third layer including a planarization film which fills convexities presented by the switching elements and the color filters, and a fourth layer having the pixel electrodes aligned with the color filter. The display device also has a second substrate including a counter electrode and adjoined to the first substrate leaving a predetermined gap left therebetween. A liquid crystal is charged in the gap between the first and second substrates.

公开(公告)号：DE69534667D1

公开(公告)日：2006-01-12

申请号：DE69534667

申请日：1995-10-17

Applicant: SONY CORP

Inventor： KADOTA HISASHI ,  INOUE YUKO ,  URAZONO TAKENOBU ,  KUNII MASAFUMI ,  NAKAMURA SHINJI

IPC: G02F1/1333 ,  G02F1/1335 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/786

Abstract: A color display device such as an active-matrix type liquid crystal display apparatus has a first substrate having pixel electrodes arranged in the form of the matrix, switching elements associated with respective pixel electrodes and color filters aligned with the respective pixel electrodes. The first substrate is composed of a laminate structure including, superposed in the mentioned sequence, a first layer having the switching elements, a second layer having the color filters, a third layer including a planarization film which fills convexities presented by the switching elements and the color filters, and a fourth layer having the pixel electrodes aligned with the color filter. The display device also has a second substrate including a counter electrode and adjoined to the first substrate leaving a predetermined gap left therebetween. A liquid crystal is charged in the gap between the first and second substrates.

公开(公告)号：DE69420791D1

公开(公告)日：1999-10-28

申请号：DE69420791

申请日：1994-07-13

Applicant: SONY CORP

Inventor： IWANAGA TOSHIHIKO ,  INO MASUMITSU ,  KAISE KIKUO ,  URAZONO TAKENOBU ,  IKEDA HIROYUKI

IPC: H01L21/30 ,  H01L21/336 ,  H01L29/786 ,  H01L29/78 ,  H01L21/322 ,  H01L23/31

Abstract: A thin film semiconductor device comprising a thin film transistor (TFT) having a thin film semiconductor on an insulation substrate to define an element region, and a hygroscopic interlayer dielectric which covers said element region. A hydrogenation treatment which comprises said interlayer dielectric provided thereon a cap film for blocking hydrogen diffusion, so that water entrapped by the interlayer dielectric may be decomposed to generate hydrogen which is allowed to diffuse into the thin film transistor provided on the side opposite to that of the cap film.

公开(公告)号：MY114876A

公开(公告)日：2003-02-28

申请号：MYPI9501121

申请日：1995-04-28

Applicant: SONY CORP

Inventor： INO MASUMITSU ,  HAYASHI HISAO ,  KUNII MASAFUMI ,  URAZONO TAKENOBU ,  NISHIHARA SHIZUO ,  MINEGISHI MASAHIRO

IPC: G02F1/136 ,  H01L21/00 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/20 ,  H01L21/265 ,  H01L21/268 ,  H01L21/336 ,  H01L21/84 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

Abstract: IN A METHOD OF MANUFACTURING SEMICONDUCTOR CHIPS (7) FOR DISPLAY, A SEMICONDUCTOR THIN FILM (2) IS FIRST FORMED ON AN INSULATING SUBSTRATE (1), AND THEN A SERIES OF PROCESSES CONTAINING A HEAT-TREATMENT PROCESS FOR THE SEMICONDUCTOR THIN FILM (2) ARE CARRIED OUT TO FORM INTEGRATED THIN FILM TRANSISTORS ON A SECTIONED AREA (3) FOR ONE CHIP. THEREAFTER, PIXEL ELECTRODES FOR ONE PICTURE (FRAME) ARE FORMED WITHIN THE SECTIONED AREA (3). DURING THE SERIES OF PROCESSES, A LASER PULSE (8) IS IRRADIATED ONTO THE SECTIONED AREA (3) BY ONE SHOT TO PERFORM A HEAT TREATMENT ON THE SEMICONDUCTOR THIN FILM (2) FOR ONE CHIP COLLECTIVELY AND SIMULTANEOUSLY (I.E., PERFORM A BATCH HEAT TREATMENT ON THE SEMICONDUCTOR THIN FILM (2)). THROUGH THE BATCH HEAT TREATMENT, THE CRYSTALLIZATION OF THE SEMICONDUCTOR THIN FILM (2) IS PROMOTED. IN ADDITION, AFTER THE SEMICONDUCTOR THIN FILM (2) IS DOPED WITH IMPURITIES, THE ACTIVATION OF IMPURITIES DOPED IN THE SEMICONDUCTOR THIN FILM (2) CAN BE PERFORMED BY THE BATCH HEAT TREATMENT.(FIG. 5)

公开(公告)号：DE69420791T2

公开(公告)日：2000-03-23

申请号：DE69420791

申请日：1994-07-13

Applicant: SONY CORP

Inventor： IWANAGA TOSHIHIKO ,  INO MASUMITSU ,  KAISE KIKUO ,  URAZONO TAKENOBU ,  IKEDA HIROYUKI

IPC: H01L21/30 ,  H01L21/336 ,  H01L29/786 ,  H01L29/78 ,  H01L21/322 ,  H01L23/31

Abstract: A thin film semiconductor device comprising a thin film transistor (TFT) having a thin film semiconductor on an insulation substrate to define an element region, and a hygroscopic interlayer dielectric which covers said element region. A hydrogenation treatment which comprises said interlayer dielectric provided thereon a cap film for blocking hydrogen diffusion, so that water entrapped by the interlayer dielectric may be decomposed to generate hydrogen which is allowed to diffuse into the thin film transistor provided on the side opposite to that of the cap film.

公开(公告)号：SG48688A1

公开(公告)日：1998-05-18

申请号：SG1995000351

申请日：1995-04-28

Applicant: SONY CORP

Inventor： INO MASUMITSU ,  HAYASHI HISAO ,  KUNII MASAFUMI ,  URAZONO TAKENOBU ,  NISHIHARA SHIZUO ,  MINEGISHI MASAHIRO

IPC: G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/20 ,  H01L21/265 ,  H01L21/268 ,  H01L21/336 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

Abstract: In a method of manufacturing semiconductor chips for display, a semiconductor thin film is first formed on an insulating substrate, and then a series of processes containing a heat-treatment process for the semiconductor thin film are carried out to form integrated thin film transistors on a sectioned area for one chip. Thereafter, pixel electrodes for one picture (frame) are formed within the sectioned area. During the series of processes, a laser pulse is irradiated onto the sectioned area by one shot to perform a heat treatment on the semiconductor thin film for one chip collectively and simultaneously (i.e., perform a batch heat treatment on the semiconductor thin film). Through the batch heat treatment, the crystallization of the semiconductor thin film is promoted. In addition, after the semiconductor thin film is doped with impurities, the activation of impurities doped in the semiconductor thin film can be performed by the batch heat treatment.

公开(公告)号：JPH09153623A

公开(公告)日：1997-06-10

申请号：JP33577195

申请日：1995-11-30

Applicant: SONY CORP

Inventor： URAZONO TAKENOBU

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To enable prevention of voids and hillocks and hence prevention of disconnection without increasing wiring resistance, by providing a multilayer structure of wiring in which an aluminum metal film and a refractory metal film are stacked. SOLUTION: A wiring 7 has a multilayer structure in which an aluminum metal film 11 and a refractory metal film are stacked. In the drawing, the refractory metal film is made of a titanium metal film 10. Also, other refractory metal films, such as, a tungsten metal film, a molybdenum metal film and a chromium metal film, may be used in place of the titanium metal film. The titanium metal film 10 functions as a barrier layer so that the aluminum metal film 11 does not directly contact a semiconductor thin film 4, thereby preventing generation of voids. In this double structure, mechanical strength of the wiring is secured by the titanium metal film 10. On the contrary, if the upper titanium metal film 10 is stacked on the lower aluminum metal film 11, the upper titanium 10 prevents migration of aluminum atoms even when stress is applied to the aluminum metal film 11.

公开(公告)号：JPH0823105A

公开(公告)日：1996-01-23

申请号：JP25761694

申请日：1994-09-27

Applicant: SONY CORP

Inventor： INO MASUMITSU ,  HAYASHI HISAO ,  KUNII MASABUMI ,  URAZONO TAKENOBU ,  NISHIHARA SHIZUO ,  MINEGISHI MASAHIRO

IPC: G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/20 ,  H01L21/265 ,  H01L21/268 ,  H01L21/336 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

Abstract: PURPOSE:To improve the efficiency of laser irradiation, by irradiating an area with a laser pulse in one-shot processing to carry out one-shot heating of a semiconductor thin film for one chip. CONSTITUTION:A semiconductor thin film 2 is formed on an insulating substrate 1, and then a series of processings including heating of the semiconductor thin film 2 is carried out, thus integrating thin film transistors in an area 3 for one chip. Finally, pixel electrodes for one frame is formed in a matrix array 4, thus completing a semiconductor chip 7 for display. In the processing, the pre-set area 3 is irradiated with a laser pulse 8 in one shot to carry out one-shot heating of the semiconductor thin film 2 for one chip. Thus, the time for laser irradiation is shortened, enabling mass production. Also, as the one-shot heating produces crystal of high uniformity, the process conditions are stabilized and the uniformity of electrical properties of the thin film transistor is secured. Also, in the laser irradiation, impurities are activated by one-shot heating after implanting the impurities into the semiconductor film 2.