公开(公告)号：JPH11102541A

公开(公告)日：1999-04-13

申请号：JP26400997

申请日：1997-09-29

Applicant: SONY CORP

Inventor： TAKEDA MINORU ,  YAMATSU HISAYUKI ,  FURUKI MOTOHIRO

IPC: G03F7/022 ,  G03F7/023 ,  G11B7/26

Abstract: PROBLEM TO BE SOLVED: To realize higher density and higher capacity of optical disks by coating a substrate with a photoresist of which the average value of extinction coefficients of a photoresist film, before and after being exposed to a laser light of a specific wavelength, is made to be a specified value. SOLUTION: The wavelength of a laser light to be used for exposure is set at 300 nm or less. The average value of extinction coefficients of a photoresist to be used before and after being exposed to the laser of this wavelength is 0.1 or less. When light having a wavelength λ and an intensity T0 is incident onto a resist film 20 with a thickness of d μm formed of a photoresist having an absorbing coefficient a, a light transmitting ratio T1 /T0 and an extinction coefficient k of the resist film 20 can be expressed as e and λ/4π, respectively. When a cutting is performed with a photoresist having an average extinction coefficient of 0.1 or less, a latent image with a convex and concave pattern can be precisely formed with a satisfactory edge shape, allowing an high density to be realized.

公开(公告)号：JPH09306042A

公开(公告)日：1997-11-28

申请号：JP12039396

申请日：1996-05-15

Applicant: SONY CORP

Inventor： KUROUSU ASAO ,  TAKEDA MINORU

IPC: B29C65/48 ,  B29L17/00 ,  G11B7/26

Abstract: PROBLEM TO BE SOLVED: To prevent the occurrence of unequal curing in a photo-curing treatment of the photo-curing adhesive interposed between substrates and to avert the damage and deformation of the substrates by light irradiation. SOLUTION: In this process, the production of an optical recording medium formed by disposing two sheets of the substrates for the optical recording medium, at least one of which have information recording layers, in such a manner that the main surface sides having these information recording layers face each other, is carried out. In such a case, the two substrates for the optical recording medium are aligned by interposing the photo-curing adhesive between the substrates stuck to each other and the photo-curing treatment of the photo- curing adhesive is carried out by executing the light irradiation from both outer sides of the two substrates for the optical recording medium.

公开(公告)号：JPH09288851A

公开(公告)日：1997-11-04

申请号：JP12222296

申请日：1996-04-19

Applicant: SONY CORP

Inventor： TAKEDA MINORU

IPC: G11B11/10 ,  G11B7/26 ,  G11B11/105

Abstract: PROBLEM TO BE SOLVED: To provide a device for manufacturing an optical disk capable of manufacturing the optical disk with high signal recording accuracy by a simple equipment. SOLUTION: The device is provided with a laser beam source 151 emitting UV laser beam, modulation means 152, 153 modulating the intensity of the UV laser beam emitted from the laser beam source 151 and optical means 154, 155, 156 irradiating an optical disk substrate 1 with the UV laser beam from the modulation means 152, 153 for processing and forming signal pits on the rotating optical disk substrate 1. Further, the device is provided with a supplying nozzle 13 which is arranged near a processing region on the optical disk substrate 1 and flows gas from a rotation center side of the optical disk substrate 1 toward the processing region and a suction nozzle 14 which is arranged at a position facing to the supplying nozzle 13 with the processing region and sucks gas flowed from the supplying nozzle 13.

公开(公告)号：JPH09153233A

公开(公告)日：1997-06-10

申请号：JP31334095

申请日：1995-11-30

Applicant: SONY CORP

Inventor： KATSURAMOTO SHINJI ,  TAKEDA MINORU ,  AKI YUICHI

IPC: G11B7/26

Abstract: PROBLEM TO BE SOLVED: To record signals by using an ultraviolet laser beam without deterioration of the signal quality by removing scattering particles generated from an optical disk at the time of forming signal grooves on the optical disk by using a blow-off nozzle. SOLUTION: A gas pressurized by a gas pressure source 41 is led to a valve 43 through a conduit tube 42. The valve regulates a flow rate of the gas. The blow-off strength of the gas onto the optical disk 8 is thus controlled. The flow rate regulated gas is led to a blow-off nozzle 45 through a conduit tube 44, and is blown off from the tip of the nozzle 45 onto the position where a pit is to be formed on the disk 8. The nozzle 45 is arranged so that it always maintains a fixed positional relationship to an objective 6 and the optical disk 8 and also the gas blown out of the nozzle flows approximately in a fixed direction. Thus, articles scattered from the optical disk 8 associated with pit forming can be removed.

公开(公告)号：JPH09152618A

公开(公告)日：1997-06-10

申请号：JP31336295

申请日：1995-11-30

Applicant: SONY CORP

Inventor： TAKEDA MINORU ,  YAMAZAKI TAKESHI

IPC: G02F1/1343

Abstract: PROBLEM TO BE SOLVED: To make it possible to use substrates consisting of inexpensive plastic materials while suppressing the damage on the substrates under transparent electrode films at the time of production by extremely easily forming electrodes having fine wiring patterns and to embody the increase in the size of the screen of a planar display panel and the enhancement of its fineness which are recent requirements. SOLUTION: While the surface of the transparent electrode film 31 is observed by a monitor TV 52, a laser beam is condensed to a prescribed spot diameter on the transparent electrode film 31 in an objective lens 45 and the transparent electrode film 31 is moved at a prescribed spot scanning speed on an X-Y stage 46, by which the part irradiated with the laser beam of the transparent electrode film 31 is instantaneously abrased and removed. The transparent electrode film 31 is thus subjected to prescribed patterning.

公开(公告)号：JP2570730B2

公开(公告)日：1997-01-16

申请号：JP6740487

申请日：1987-03-20

Applicant: SONY CORP

Inventor： MINEGISHI SHINJI ,  TAKEDA MINORU ,  SUGANO YUKYASU

IPC: G03F9/00 ,  G03C1/00 ,  G03F7/00 ,  G03F7/09 ,  G03F7/11 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30

公开(公告)号：JPH08236745A

公开(公告)日：1996-09-13

申请号：JP3796495

申请日：1995-02-27

Applicant: SONY CORP

Inventor： TAKEDA MINORU ,  HAYASHI YUTAKA

IPC: G01M11/00 ,  G02B5/20 ,  G02B5/22 ,  H01L27/148 ,  H01L31/0232

Abstract: PURPOSE: To simply constitute a system for evaluation of pattern matching at a low price by obviating a large-quantity and expensive semiconductor memory or a high-speed processor at the time of evaluating of pattern matching. CONSTITUTION: An a-Si film 12 with a thickness to intercept light, where visible light transmitting parts 13 for two-dimensional patterns corresponding to sensor parts 17 are formed, is made on a plurality of sensor parts 17.

公开(公告)号：JPH08236632A

公开(公告)日：1996-09-13

申请号：JP3796595

申请日：1995-02-27

Applicant: SONY CORP

Inventor： TAKEDA MINORU ,  HAYASHI YUTAKA ,  SONEDA MITSUO

IPC: H01L21/82 ,  H01L27/10

Abstract: PURPOSE: To reduce the area of a semiconductor memory without short-circuiting the adjacent circuit by irradiating a load resistor composed of a thin film of amorphous silicon with a spot light of UV laser to lower the resistance thereof and selecting an alternative cell for allowing function of a redundant circuit. CONSTITUTION: When a spare row of spare cells corresponding to a defective cell is selected by programming a selective switching element, a fuse element 12, i.e., a load resistor composed of a thin film of amorphous silicon, is irradiated with a spot light of UV laser thus converting a-Si into polysilicon through crystallization. Consequently, the load resistance of the fuse element 12 is decreased sufficiently as compared with the ON resistance of a transistor M2 and a spare row is selected to allow function of a redundant circuit. With such arrangement, adjacent circuit can be prevented from being short-circuited by a scattering matter.

公开(公告)号：JPH0799253A

公开(公告)日：1995-04-11

申请号：JP24017893

申请日：1993-09-27

Applicant: SONY CORP

Inventor： TAKEDA MINORU

IPC: H01L27/11 ,  H01L21/8244

Abstract: PURPOSE:To improve the hot carrier resistance of a selecting transistor by containing a nitrogen containing film in the gate insulating film of the selecting transistor and to improve the operation stability and the reliability of a memory cell by lowering the initial current driving capability. CONSTITUTION:An element separating region 4 and gate insulating films 6a and 6b are formed on the surface of a P-type semiconductor substrate 2 by selective oxidation. The gate insulating films 6b of selecting transistors Q3 and Q4 are constituted of silicon oxide films containing nitrogen containing films. The gate insulating films 6a of driving transistors Q1 and Q2 are constituted of silicon oxide films, which do not contain nitrogen containing films. Since the nitrogen containing films are contained in the gate insulating films 6b of the selecting transistors Q3 and Q4 the initial current driving capability of the selecting transistor is decreased. However, the ratio of the driving capabilities of the driving transistors Q1 and Q2 to the selecting transistors Q3 and Q4 is increased, and the operation stability of a memory cell is improved.

公开(公告)号：JPH06310593A

公开(公告)日：1994-11-04

申请号：JP12075693

申请日：1993-04-23

Applicant: SONY CORP

Inventor： TAKEDA MINORU

IPC: H01L21/76 ,  H01L21/316

Abstract: PURPOSE:To make a manufacturing process easy by eliminating the need for the flattening treatment of the surface of a semiconductor base body at a time when a trench having a different area is buried with silicon oxide in a method, in which an element isolation region is formed by burying the trench with silicon oxide. CONSTITUTION:A trench 12 is formed to a semiconductor base body 11 in a first process, a silicon oxide film 13 is shaped onto the bottom of the trench 12 in a second process, silicon oxide 14 is grown selectively on the silicon oxide film 13 in a third process, and the trench 12 is buried with silicon oxide 14, thus forming an element isolation region 15.