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    Screen, method for manufacturing the same, projection system and display device
    72.
    发明专利
    Screen, method for manufacturing the same, projection system and display device 有权
    屏幕，其制造方法，投影系统和显示装置

    公开(公告)号：JP2003330119A

    公开(公告)日：2003-11-19

    申请号：JP2002141871

    申请日：2002-05-16

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： WATANABE SEIICHI ,  KUROKI YOSHIHIKO ,  TODA ATSUSHI ,  ISHIMOTO HIKARI ,  ISHIBASHI AKIRA ,  NAKAEDA TAKEHIRO ,  NISHI TOMOHIRO ,  ONISHI MICHIHIRO

    IPC: G03B21/60 ,  G03B21/00

    Abstract: PROBLEM TO BE SOLVED: To realize a screen having less external light noise and high contrast of a video and capable of obtaining a video sinking in the black side. SOLUTION: The screen is constituted by scatteringly disposing reflection surfaces wherein particulate layers 2, 3 and 4 for red color reflection, green color reflection and blue color reflection are laminated in the vertical direction or disposed in the horizontal direction on a substrate 1. The diameters of particulates for red color reflection, green color reflection and blue color reflection are specified to be nearly 280 nm, nearly 235 nm and nearly 212 nm, respectively. The substrate 1 is formed by using a material which can absorb light having a wavelength except the wavelength of three primary colors of red, green and blue. COPYRIGHT: (C)2004,JPO

    Abstract translation: 要解决的问题：实现具有较少的外部光噪声和高对比度的视频的屏幕，并且能够获得黑色的视频信号。 解决方案：屏幕是通过散布地布置反射表面构成的，其中用于红色反射，绿色反射和蓝色反射的颗粒层2,3和4在垂直方向上层叠或者在水平方向上设置在基板1上 用于红色反射，绿色反射和蓝色反射的微粒的直径分别为近280nm，近235nm和近212nm。 基板1通过使用能够吸收除了红色，绿色和蓝色的三原色的波长的波长的光的材料形成。 版权所有（C）2004，JPO

    SEMICONDUCTOR LIGHT-EMITTING ELEMENT
    76.
    发明专利
    SEMICONDUCTOR LIGHT-EMITTING ELEMENT 失效

    公开(公告)号：JPH11145565A

    公开(公告)日：1999-05-28

    申请号：JP31070497

    申请日：1997-11-12

    Applicant: SONY CORP

    Inventor： NAKANO KAZUSHI ,  OKUYAMA HIROYUKI ,  TODA ATSUSHI

    IPC: H01L33/06 ,  H01L33/12 ,  H01L33/14 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01S3/18 ,  H01L33/00

    Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element, which is stable in characteristics and stable with longer life by preventing a p-type impurity from diffusing. SOLUTION: On a substrate 1, with a III-V group buffer layer 2, an n-type conductive layer (a II-VI group buffer layer 3, a first conductive clad layer 4), a first guide layer 5, an active layer 6, a second guide layer 7, and a p-type conductive layer (a second conductive clad layer 8, a first semiconductor layer 9, a second semiconductor layer 10, a superlattice layer 11, and a contact layer 12) are successively laminated. The n-type conductive layer is added with Cl as n-type impurity. The p-type conductive layer is added with an I-group element which is, at least one kind from among K, Rb, and Cs, as p-type impurity. Since the p-type impurity occupies a lattice position of a II-group element, diffusion is mode hard to take place under electrification, with no change in p-n junction position.

    GROWTH OF TE-BASED II-VI COMPOUND SEMICONDUCTOR
    77.
    发明专利
    GROWTH OF TE-BASED II-VI COMPOUND SEMICONDUCTOR 失效

    公开(公告)号：JPH0831757A

    公开(公告)日：1996-02-02

    申请号：JP18274194

    申请日：1994-07-12

    Applicant: SONY CORP

    Inventor： ASANO TAKEHARU ,  TODA ATSUSHI ,  FUNATO KENJI

    IPC: H01L21/203 ,  H01L21/205 ,  H01L33/28 ,  H01S5/00 ,  H01L33/00 ,  H01S3/18

    Abstract: PURPOSE:To lower the growth temperature of a Te-based II-VI compound semiconductor in comparison with a conventional technique and obtain a sufficiently high growth rate in practical terms. CONSTITUTION:In growing a Te-based II-VI compound semiconductor layer, such as, a ZnTe layer 2, on a semiconductor substrate, such as, a GaAs substrate 1, by a vapor growth method like a metal organic chemical vapor deposition method, di-tertiary-butyltellurium is used as a Te material. The ratio of a group VI element to a group II element of a growth material is set to 0.7 to 3.7. The growth temperature Tg is set to 275 deg.C

    ORGANOMETALLIC VAPOR GROWTH METHOD AND PREPARATION OF LIGHT-EMITTING ELEMENT
    78.
    发明专利
    ORGANOMETALLIC VAPOR GROWTH METHOD AND PREPARATION OF LIGHT-EMITTING ELEMENT 失效

    公开(公告)号：JPH07153700A

    公开(公告)日：1995-06-16

    申请号：JP32110093

    申请日：1993-11-26

    Applicant: SONY CORP

    Inventor： TODA ATSUSHI ,  ASANO TAKEHARU

    IPC: C23C16/30 ,  C30B25/02 ,  H01L21/205 ,  H01L21/365 ,  H01L33/00 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01S3/18

    Abstract: PURPOSE:To obtain an MOCVD method enabling formation of a compound semiconductor layer containing Mg and an MOCVD method enabling easy formation of a grated structure for the compound semiconductor layer. CONSTITUTION:An MOCVD method wherein a II-VI compound semiconductor layer is formed by using an organometallic compound of biscyclopentadienyl magnesium series of which a vapor pressure at 330 deg.CK 15 1.3X10 Pa (0.1 torr) to 1.3X10 Pa (1.0 torr), or an MOCVD method wherein a four-element mixed crystal series compound semiconductor layer constituted of two kinds of group II elements and two kinds of group VI elements is formed and wherein the flow rate of one of two kinds of material gases containing the group VI elements is changed in a state of the flow rates of two kinds of material gases containing the group II elements being held fixed and thereby the compositional rates of the group II elements in the compound semiconductor layer are changed.

    SEMICONDUCTOR LASER
    79.
    发明专利
    SEMICONDUCTOR LASER 失效

    公开(公告)号：JPH01175278A

    公开(公告)日：1989-07-11

    申请号：JP33238587

    申请日：1987-12-29

    Applicant: SONY CORP

    Inventor： NAKANO KAZUSHI ,  IKEDA MASAO ,  TODA ATSUSHI

    IPC: H01S5/00

    Abstract: PURPOSE:To improve the crystalline property of a p-type clad layer and extend its lifetime characteristics, by causing the carrier concentration of the p-type clad layer adjacent to an active layer to come to a low level in an AlGaInP semiconductor laser. CONSTITUTION:In the case of an AlGaInP semiconductor laser 12, the carrier concentration of a p-type clad layer in a double hetero structure is set below 6X10 cm . In other words, an MOCVD process allows an n-type (Al0.5Ga0.5)0.5 In0.5P clad layer 3, an undopped Ga0.5In0.5P active layer 4, a p-type (Al0.5Ga0.5)0.5 In0.5P clad layer 11 where positive hole concentration is 2X10 cm , and a p-type GaAs cap layer 6 to grow one after another on an n-type GaAs substrate 2. Required ions are implanted in such a way that the ions reaches the p-type AlGaInP clad layer 11 by leaving the center part of the cap layer 6 in a stripe form and the semiconductor laser 12 is made up by forming an ion-implanted high resistance layer 7.

    Solid-state imaging device and method of manufacturing the same, and electronic apparatus
    80.
    发明专利
    Solid-state imaging device and method of manufacturing the same, and electronic apparatus 审中-公开
    固态成像装置及其制造方法和电子装置

    公开(公告)号：JP2011159858A

    公开(公告)日：2011-08-18

    申请号：JP2010021219

    申请日：2010-02-02

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： TODA ATSUSHI

    IPC: H01L27/146 ,  H04N5/335 ,  H04N9/07

    CPC classification number: H01L27/307

    Abstract: PROBLEM TO BE SOLVED: To improve the image quality of a captured image in a "multilayer type" solid-state imaging device.
    SOLUTION: A transmission window TM of a green photoelectric conversion unit 201G is formed so that light in a blue wavelength range transmits through a blue photoelectric conversion unit 201B by a larger amount than that of light transmitting through a part other than the transmission window TM. The transmission window TM is formed so that a width D defined by the direction of an imaging plane (an xy plane) of a substrate 101 satisfies formula (1) λc/n≤2D. Thus, a large amount of blue light transmits through the green photoelectric conversion unit 201G based on the "principle of waveguide".
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：为了提高“多层型”固态成像装置中的拍摄图像的图像质量。 解决方案：绿色光电转换单元201G的透射窗TM形成为使得蓝色波长范围内的光通过蓝色光电转换单元201B传输比通过除透射以外的部分透射的光的量更大 窗口TM。 透射窗TM形成为使得由基板101的成像面（xy平面）的方向限定的宽度D满足公式（1）λc/n≤2D。 因此，根据“波导原理”，大量的蓝光透过绿光电转换部201G。 版权所有（C）2011，JPO＆INPIT

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