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公开(公告)号:DE69131611D1
公开(公告)日:1999-10-21
申请号:DE69131611
申请日:1991-06-28
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: MATSUURA TAKASHI , HIGAKI KENJIRO , ITOZAKI HIDEO
IPC: H01L39/24
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公开(公告)号:DE69129140T2
公开(公告)日:1998-08-20
申请号:DE69129140
申请日:1991-09-18
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: TANAKA SABURO , MATSUURA TAKASHI , ITOZAKI HIDEO
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公开(公告)号:DE69407495T2
公开(公告)日:1998-05-14
申请号:DE69407495
申请日:1994-06-30
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: MATSUURA TAKASHI , YAMAKAWA AKIRA , MIYAKE MASAYA
IPC: C04B35/584 , C04B35/599 , C04B35/64
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公开(公告)号:DE69127719T2
公开(公告)日:1998-03-05
申请号:DE69127719
申请日:1991-05-30
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: TANAKA SABURO , NAKANISHI HIDENORI , ITOZAKI HIDEO , MATSUURA TAKASHI
Abstract: Improvement in a process for fabricating a superconducting junction by depositing successively a first oxide superconductor thin layer, a non-superconducting intermediate thin film layer and a second oxide superconductor thin film layer on a substrate in this order. In the ivention, the non-superconducting intermediate thin film layer is composed of MgO and the substrate is heated at a temperature between 200 and 400 DEG C during the non-superconducting intermediate thin film layer is deposited.
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公开(公告)号:DE69215993T2
公开(公告)日:1997-06-19
申请号:DE69215993
申请日:1992-07-16
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: TANAKA SABURO , MATSUURA TAKASHI , ITOZAKI HIDEO
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公开(公告)号:DE69218665D1
公开(公告)日:1997-05-07
申请号:DE69218665
申请日:1992-05-20
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: MATSUURA TAKASHI , HIGAKI KENJIRO , ITOZAKI HIDEO
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公开(公告)号:CA2169862A1
公开(公告)日:1996-08-21
申请号:CA2169862
申请日:1996-02-20
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: YAMAGIWA MASAMICHI , YAMAKAWA AKIRA , NISHIOKA TAKAO , MATSUURA TAKASHI
IPC: F16C33/24 , C04B35/584 , C04B35/593 , C04B41/80 , F01L1/14 , F01L3/02 , F16C33/04
Abstract: A silicon nitride ceramic sliding member which comprises Si3N4 grains as a main component and is shaped or controlled in dimensions through hot plastic working wherein the Si3N4 particles mainly comprises .beta.-type columnar crystal grains. The ceramic sliding member is produced by the step (I) of preparing a preform made of silicon nitride ceramic sintered body comprising Si3N4 grains as a main component wherein the average grain size (average grain size in minor axis in the case of .beta.-type columnar crystal grains) of the Si3N4 grains is at most 0.5 .mu.m, and the hot plastic working step (II) of placing the preform in a mold and effecting hot plastic deformation of the preform for shaping or dimensional control thereof while simultaneously increasing the average aspect ratio of the .beta.-type columnar crystal grains. The resultant sliding member has excellent sliding properties, a high mechanical strength and a high reliability at a low cost without resort to grinding or the like for shaping thereof.
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公开(公告)号:CA2182896A1
公开(公告)日:1996-07-04
申请号:CA2182896
申请日:1995-12-25
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: MATSUURA TAKASHI , YAMAKAWA AKIRA
Abstract: Object: to provide a part having a plurality of abrasion resistant sliding surfaces including engine parts, such as a tappet and a rocker arm, and a bearing. Constitution: a sliding part having a part body (3) of steel and a member (A), for example, of Si3N4 forming at least one sliding surface (1) out of the sliding surfaces of the body and thermally combined with the part body (3). A method of manufacturing this part comprising the steps of subjecting a part body of steel to a cementation process, hardening the resultant part body, and thermally combining a sliding surface-forming member (A) with the part body thus obtained. Effect: the manufacturing of the sliding part can be done easily, and the reduction of the manufacturing cost can be attained.
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公开(公告)号:CA2045890A1
公开(公告)日:1991-12-29
申请号:CA2045890
申请日:1991-06-28
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: MATSUURA TAKASHI , HIGAKI KENJIRO , ITOZAKI HIDEO
Abstract: A process for preparing a thin film of oxide superconductor on a single crystal substrate of semiconductor by physical vapour deposition. At first, an under-layer of an oxide having a thickness of 50 to 200 .ANG. is deposited on the single crystal substrate of semiconductor at a substrate temperature of lower than 500 .degree.C, and secondly an upper-layer of superconducting oxide material is deposited on said under-layer at a substrate temperature of higher than 600.degree.C.
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公开(公告)号:FI916142A0
公开(公告)日:1991-12-27
申请号:FI916142
申请日:1991-12-27
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: MATSUURA TAKASHI , TANAKA SABURO , ITOZAKI HIDEO
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