公开(公告)号：US20050088261A1

公开(公告)日：2005-04-28

申请号：US10692548

申请日：2003-10-24

Applicant: Lianjun Liu ,  Steven Smith

Inventor： Lianjun Liu ,  Steven Smith

IPC: B81B3/00 ,  H01H51/22

CPC classification number: B81C1/00142 ,  B81B2201/016

Abstract: A method of making a micromechanical device including forming a dielectric layer over a sacrificial layer, wherein the dielectric layer includes silicon, oxygen and nitrogen. In on embodiment, the dielectric layer is silicon oxynitride formed using plasma enhanced chemical vapor deposition (PECVD). Silicon oxynitride can easily be formed as a low stress material, unlike silicon dioxide, and does not have a large charge trap density like silicon nitride.

Abstract translation: 一种制造微机械装置的方法，包括在牺牲层上形成电介质层，其中介电层包括硅，氧和氮。 在实施例中，电介质层是使用等离子体增强化学气相沉积（PECVD）形成的氮氧化硅。 氮氧化硅可以容易地形成为低应力材料，与二氧化硅不同，并且不具有诸如氮化硅的大的电荷陷阱密度。

公开(公告)号：US20030062961A1

公开(公告)日：2003-04-03

申请号：US09967732

申请日：2001-09-28

Inventor： Qing Ma ,  Peng Cheng

IPC: H03B005/18

CPC classification number: B81B3/0078 ,  B81B2201/016 ,  B81B2203/019 ,  H03H3/0077 ,  H03H9/2463

Abstract: A micro-electromechanical (MEM) resonator is described that includes a substrate, a microbridge beam structure coupled to the substrate and at least one electrode disposed adjacent to the microbridge beam structure to induce vibration of the beam. The microbridge beam structure includes support sections and a beam formed between the support sections. The center region of the beam has a mass that is less than the mass of regions of the beam adjacent to the support sections.

公开(公告)号：US20030020173A1

公开(公告)日：2003-01-30

申请号：US10147907

申请日：2002-05-20

Inventor： Michael A. Huff ,  Mehmet Ozgur

IPC: H01L023/52

CPC classification number: B82Y30/00 ,  B81B7/0064 ,  B81B2201/016 ,  B81B2207/015 ,  B81B2207/092 ,  B81B2207/095 ,  B81B2207/096 ,  B81C2203/0118 ,  B81C2203/035 ,  H01G5/16 ,  H01G5/18 ,  H01G5/40 ,  H01H59/0009 ,  H01H2057/006 ,  H01H2059/0072 ,  H01L2224/16225 ,  H01L2924/15153 ,  H01P1/127 ,  H01P1/184 ,  H01Q1/38 ,  H01Q3/26 ,  H01Q15/0013 ,  H01Q15/004 ,  H01Q21/0087 ,  H05K1/0306 ,  H05K1/16

Abstract: A phased-array antenna system and other types of radio frequency (RF) devices and systems using microelectromechanical switches (nullMEMSnull) and low-temperature co-fired ceramic (nullLTCCnull) technology and a method of fabricating such phased-array antenna system and other types of radio frequency (RF) devices are disclosed. Each antenna or other type of device includes at least two multilayer ceramic modules and a MEMS device fabricated on one of the modules. Once fabrication of the MEMS device is completed, the two ceramic modules are bonded together, hermetically sealing the MEMS device, as well as allowing electrical connections between all device layers. The bottom ceramic module has also cavities at the backside for mounting integrated circuits. The internal layers are formed using conducting, resistive and high-k dielectric pastes available in standard LTCC fabrication and low-loss dielectric LTCC tape materials.

Abstract translation: 使用微机电开关（“MEMS”）和低温共烧陶瓷（“LTCC”）技术的相控阵天线系统和其他类型的射频（RF）装置和系统以及制造这种相控阵天线的方法 系统和其他类型的射频（RF）设备。 每个天线或其他类型的装置包括至少两个多层陶瓷模块和在其中一个模块上制造的MEMS装置。 一旦完成了MEMS器件的制造，就将两个陶瓷模块结合在一起，密封MEMS器件，并允许所有器件层之间的电连接。 底部陶瓷模块在背面还具有用于安装集成电路的空腔。 内部层使用标准LTCC制造和低损耗介电LTCC带材料中可用的导电，电阻和高k电介质浆料形成。

公开(公告)号：EP3378080A1

公开(公告)日：2018-09-26

申请号：EP16804968.2

申请日：2016-11-14

Applicant: Cavendish Kinetics, Inc.

Inventor： VAN KAMPEN, Robertus Petrus ,  HUFFMAN, James Douglas ,  RENAULT, Mickael ,  DASTIDER, Shibajyoti Ghosh ,  MUYANGO, Jacques Marcel

IPC: H01H1/00 ,  B81B3/00 ,  B81C1/00

CPC classification number: H01H1/0036 ,  B81B3/0021 ,  B81B2201/016 ,  B81C1/00142 ,  H01H2001/0084

Abstract: The present invention generally relates to a mechanism for making a MEMS switch that has a robust RF-contact by avoiding currents to run through a thin sidewall in a via from the RF-contact to the underlying RF-electrode.

公开(公告)号：EP3254294A1

公开(公告)日：2017-12-13

申请号：EP16703698.7

申请日：2016-01-28

Applicant: Cavendish Kinetics, Inc.

Inventor： VAN KAMPEN, Robertus Petrus ,  GADDI, Roberto ,  KNIPE, Richard L.

IPC: H01H59/00 ,  H01H1/00

CPC classification number: H01G4/005 ,  B81B2201/016 ,  H01H1/0036 ,  H01H59/0009 ,  H01H2001/0057 ,  H01H2001/0084

Abstract: The present disclosure generally relates to a MEMS DVC utilizing one or more MIM capacitors located in the anchor of the DVC and an Ohmic contact located on the RF-electrode. The MIM capacitor in combination with the ohmic MEMS device ensures that a stable capacitance for the MEMS DVC is achieved with applied RF power.

公开(公告)号：EP1398811B1

公开(公告)日：2011-08-10

申请号：EP03020159.4

申请日：2003-09-05

Applicant: IMEC

Inventor： Rottenberg, Xavier ,  Jansen, Henri ,  Tilmans, Hendrikus ,  De Raedt, Walter

IPC: H01H59/00

CPC classification number: H01H59/0009 ,  B81B3/001 ,  B81B2201/016 ,  B81C2201/115 ,  H01G5/16 ,  H01G5/18

公开(公告)号：EP2285734A2

公开(公告)日：2011-02-23

申请号：EP09746201.4

申请日：2009-05-06

Applicant: NXP B.V.

Inventor： VAN SCHAIJK, Robertus, T., F.

IPC: B81C1/00

CPC classification number: B81B3/0086 ,  B81B3/0078 ,  B81B2201/016 ,  B81B2203/0118

Abstract: A MEMS device and method, comprising: a substrate; a beam; and a cavity located therebetween; the beam comprising a first beam layer and a second beam layer, the first beam layer being directly adjacent to the cavity, the second beam layer being directly adjacent to the first beam layer; the first beam layer comprising a metal or a metal alloy containing silicon; and the second beam layer comprising a metal or a metal alloy substantially not containing silicon. Preferably the second beam layer is thicker than the first beam layer e.g. at least five times thicker, and the first beam layer comprises a metal or alloy containing between 1 % and 2% of silicon. The second beam layer provides desired mechanical and/ or optical properties whilst the first beam layer prevents spiking.

公开(公告)号：EP1846320B8

公开(公告)日：2009-04-08

申请号：EP06709238.7

申请日：2006-02-02

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE

Inventor： FLEURY, Gatien ,  CHARVET, Pierre-Louis

IPC: B81B3/00 ,  H01H50/00

CPC classification number: B81C1/00666 ,  B81B2201/016 ,  B81C2201/0167

Abstract: The invention relates to a micromechanical device comprising a mobile beam (1), said beam being attached by the two ends (2) thereof to a rigid frame (3) provided with two arms (4) each having two ends (5). The ends (5) of an arm (4) are respectively fixed to the two ends (2) of the mobile beam (1). Each arm (4) has a central part (6) arranged between the two ends (5) of the corresponding arm (4). A rear face of the central part (6) of each arm (4) is attached to a base support (10). The frame (3) comprises at least one stressed element (11) for adjusting the stressed state of the beam. The stressed element (11) can be centred between the front face and the rear face of the corresponding arm (4). The frame (3) can comprise pairs of front and rear stressed elements (11) which are respectively arranged on the front face and the rear face of the arms (4) in such a way that they face each other.

公开(公告)号：EP1949165A1

公开(公告)日：2008-07-30

申请号：EP05823340.4

申请日：2005-11-16

Applicant: IDC, LLC

Inventor： CHUI, Clarence

IPC: G02B26/00 ,  B81B3/00 ,  H01H59/00

CPC classification number: G02B26/001 ,  B81B3/0086 ,  B81B2201/016 ,  B81B2201/042 ,  H01H59/0009

Abstract: A MEMS device is electrically actuated with a voltage placed across a first electrode (702) and a moveable material (714). The device may be maintained in an actuated state by latch electrodes (730a, 730b) that are separate from the first electrode

公开(公告)号：EP1461828B1

公开(公告)日：2008-01-23

申请号：EP02803310.8

申请日：2002-11-07

Applicant: International Business Machines Corporation

Inventor： VOLANT, Richard, P. ,  BISSON, John, C. ,  COTE, Donna R. ,  DALTON, Timothy, J. ,  GROVES, Robert, A. ,  PETRARCA, Kevin, S. ,  STEIN, Kenneth, J. ,  SUBBANNA, Seshadri

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00246 ,  B81B2201/016 ,  B81B2201/018 ,  B81B2203/0127 ,  B81B2207/07 ,  B81C1/00611 ,  B81C2201/0122 ,  B81C2203/0735 ,  H01G5/40 ,  H01H59/0009

Abstract: A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.