Abstract:
For a substrate having fine convexoconcave patterns on its surface, the dimensions of the convexoconcave patterns in a vertical direction of a quartz glass substrate are controlled to be uniform with extreme accuracy and over the entire substrate surface. The quartz glass substrate is made to have a fictive temperature distribution of at most 40° C. and a halogen concentration of less than 400 ppm, and the etching rate of the surface of the quartz glass substrate is made uniform, whereby the dimensions of the convexoconcave patterns in a vertical direction of the quartz glass substrate are controlled to be uniform with good accuracy and over the entire substrate surface.
Abstract:
The invention provides a method for producing a quartz glass jig for use in semiconductor industries, which enables increasing the surface layer cleanliness simply and surely at low cost; it also provides a quartz glass jig improved in surface layer cleanliness. The inventive means for resolution are a method comprising processing a quartz glass raw material into a desired shape by a treatment inclusive of fire working, annealing for stress removal, and cleaning treatment to obtain the final product, the method is characterized by that it comprises performing gas phase etching step and gas phase purification step on the surface layer of the quartz glass jig after applying the annealing treatment for stress removal but before the cleaning treatment, wherein the gas phase purification step is carried out continuously after the gas phase etching step.
Abstract:
A quartz glass crucible for use in pulling up a silicon single crystal, wherein it has, at least in the curved portion thereof, a three-layer structure comprising a transparent inner layer being composed of a synthetic quartz glass and having a low Al concentration, a transparent or nontransparent intermediate layer being composed of a natural quartz glass or a mixture of natural and synthetic quartz glasses and having a high Al concentration, and a nontransparent outer layer being composed of a natural quartz glass and having an Al concentration higher than that of the intermediate layer. The quartz glass crucible is reduced in the deformation of the transparent inner layer, and allows the suppression of the change in the amount of dissolution of the quartz glass crucible associated with the pull-up of a single crystal and the achievement of the uniform oxygen concentration in the longitudinal direction of a single crystal.
Abstract:
Subjects for the invention are to obtain a quartz powder having a high purity and high quality and a process for producing the same and to obtain a glass molding formed by melting and molding the powder and extremely reduced in bubble inclusion. The invention provides a quartz powder, preferably a synthetic quartz powder obtained by the sol-gel method, which, upon heating from room temperature to 1,700° C., generates gases in which the amount of CO is 300 nl/g or smaller and the amount of CO2 is 30 nl/g or smaller.
Abstract:
A quartz glass crucible for use in pulling up a silicon single crystal, wherein it has, at least in the curved portion thereof, a three-layer structure comprising a transparent inner layer being composed of a synthetic quartz glass and having a low Al concentration, a transparent or nontransparent intermediate layer being composed of a natural quartz glass or a mixture of natural and synthetic quartz glasses and having a high Al concentration, and a nontransparent outer layer being composed of a natural quartz glass and having an Al concentration higher than that of the intermediate layer. The quartz glass crucible is reduced in the deformation of the transparent inner layer, and allows the suppression of the change in the amount of dissolution of the quartz glass crucible associated with the pull-up of a single crystal and the achievement of the uniform oxygen concentration in the longitudinal direction of a single crystal.
Abstract:
Applicants have discovered the existence of loss peaks in optical fiber transmission systems using wavelengths in the E-band and the L-band. Specifically, they have discovered the existence of narrow loss peaks at 1440 nm, 1583 nm and 1614 nm. Because the peaks are relatively narrow, they cannot be easily removed by conventional gain equalizers in long haul transmission systems, and although the peaks are relatively small, they can nonetheless cause transmission channels to drop out in amplified DWDM transmission systems. Applicants have further discovered that these loss peaks are due to carbon contamination of the transmission fiber. Thus optical fibers should be fabricated essentially free of carbon contamination. This means eliminating carbon-containing reagents in preform and tube-making processes.
Abstract:
The invention provides a method for producing a quartz glass jig for use in semiconductor industries, which enables increasing the surface layer cleanliness simply and surely at low cost; it also provides a quartz glass jig improved in surface layer cleanliness. The inventive means for resolution are a method comprising processing a quartz glass raw material into a desired shape by a treatment inclusive of fire working, annealing for stress removal, and cleaning treatment to obtain the final product, the method is characterized by that it comprises performing gas phase etching step and gas phase purification step on the surface layer of the quartz glass jig after applying the annealing treatment for stress removal but before the cleaning treatment, wherein the gas phase purification step is carried out continuously after the gas phase etching step.
Abstract:
The invention concerns a quartz glass body for an optical component for the transmission of UV radiation with a wavelength of 250 nm and less, especially for a wavelength of 157 nm, as well as a process for the manufacture of the quartz glass body where fine quartz glass particles are formed by flame hydrolysis of a silicon compound, deposited and vitrified. Suitability of a quartz glass as represented by high base transmission and radiation resistance depends on structural properties caused by local stoichiometric deviations, and on the chemical composition. The quartz glass body according to the inventions is distinguished by a uniform base transmission (relative change of base transmission ≦1%) in the wavelength range from 155 nm to 250 nm (radiation penetration depth of 10 mm) of at least 80%, a low OH content (less than 10 ppm by weight) and a glass structure substantially free from oxygen defect centers. A quartz glass body of this kind is manufactured by a process which allows bulk embedding of hydrogen or oxygen into the glass network in that at least a two stage heat treatment takes place at temperatures ranging from 850° C. to 1600° C. before the vitrification, the last stage comprising sintering at a temperature between 1300° C. and 1600° C. in an atmosphere containing hydrogen or oxygen, or a nonflammable mixture of these substances.
Abstract:
A hydrous silica gel is dehydrated by freezing, thawing, and removing water separated by thawing, thereby yielding silica particles. In addition, the silica particles thus formed is washed and fired, thereby producing a synthetic quartz glass power. A water glass is dealkalized, an oxidizing agent and an acid are added, the mixture thus formed is passed through a hydrogen type cation exchange resin, the aqueous silica solution thus formed is then gelled, and the gelled material is then washed and fired, thereby producing a synthetic quartz powder. Silica is sequentially held for a predetermined time at each temperature range of 150 to 400null C., 500 to 700null C., and 1,100 to 1,300null C., thereby producing a quartz glass.
Abstract:
A synthetic silica glass having a high transmittance for vacuum ultraviolet rays, for example F2 excimer laser beam with a wavelength of 157 nm, a high uniformity and a high durability and useful for ultraviolet ray-transparent optical glass materials is produced from a high-purity silicon compound, for example silicon tetrachloride, by heat treating an accumulated porous silica material at a temperature not high enough to convert the porous silica material to a transparent silica glass in an inert gas atmosphere for a time sufficient to cause the OH groups to be condensed and removed from the glass, and exhibits substantially no content of impurities other than OH group a difference between highest and lowest fictional temperatures of 50° C. or less and a transmittance of 157 nm ultraviolet rays through a 10 mm optical path of 60% or more, and optically a OH group content of 1 to 70 ppm, a Cl content less than 1 ppm, a total content of impurity metals of 50 ppb or less, a content of each individual impurity metal less than 10 ppb, and an ultraviolet ray-transmittance at 172 to 200 nm of 40% or more even after the glass is exposed to an irradiation of ultraviolet rays at 160 to 300 nm for one hour.